公开(公告)号：US09123528B2

公开(公告)日：2015-09-01

申请号：US13883730

申请日：2011-12-16

申请人： Johannes Baur ,  Berthold Hahn ,  Karl Engl ,  Ann-Kathrin Haerle ,  Jakob Johannes Haerle ,  Johanna Magdalena Haerle ,  Joachim Hertkorn ,  Tetsuya Taki

发明人： Johannes Baur ,  Berthold Hahn ,  Karl Engl ,  Volker Haerle ,  Joachim Hertkorn ,  Tetsuya Taki

IPC分类号： H01L29/02 ,  H01L21/78 ,  H01L21/02 ,  H01L33/00 ,  H01L33/08

CPC分类号： H01L33/32 ,  H01L21/02612 ,  H01L21/78 ,  H01L24/73 ,  H01L29/02 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/46 ,  H01L33/507 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00012 ,  H01L2924/00014

摘要： A composite substrate has a carrier and a utility layer. The utility layer is attached to the carrier by means of a dielectric bonding layer and the carrier contains a radiation conversion material. Other embodiments relate to a semiconductor chip having such a composite substrate, a method for producing a composite substrate and a method for producing a semiconductor chip with a composite substrate.

摘要翻译： 复合衬底具有载体和效用层。 实用层通过介电粘合层附着到载体上，载体包含辐射转换材料。 其他实施方式涉及具有这种复合基板的半导体芯片，复合基板的制造方法以及具有复合基板的半导体芯片的制造方法。

公开(公告)号：US08581279B2

公开(公告)日：2013-11-12

申请号：US11921530

申请日：2006-06-02

申请人： Johannes Baur ,  Volker Härle ,  Berthold Hahn ,  Andreas Weimar ,  Raimund Oberschmid ,  Ewald Karl Michael Guenther ,  Franz Eberhard ,  Markus Richter ,  Jörg Strauss

发明人： Johannes Baur ,  Volker Härle ,  Berthold Hahn ,  Andreas Weimar ,  Raimund Oberschmid ,  Ewald Karl Michael Guenther ,  Franz Eberhard ,  Markus Richter ,  Jörg Strauss

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a luminescence diode chip having a radiation exit area (1) and a contact structure (2, 3, 4) which is arranged on the radiation exit area (1) and comprises a bonding pad (4) and a plurality of contact webs (2, 3) which are provided for current expansion and are electrically conductively connected to the bonding pad (4), the bonding pad (4) is arranged in an edge region of the radiation exit area (1). The luminescence diode chip has reduced absorption of the emitted radiation (23) in the contact structure (2, 3, 4).

公开(公告)号：US08530923B2

公开(公告)日：2013-09-10

申请号：US12922830

申请日：2009-04-28

申请人： Matthias Sabathil ,  Lutz Hoeppel ,  Andreas Weimar ,  Karl Engl ,  Johannes Baur

发明人： Matthias Sabathil ,  Lutz Hoeppel ,  Andreas Weimar ,  Karl Engl ,  Johannes Baur

IPC分类号： H01L33/38

CPC分类号： H01L33/387 ,  H01L33/42 ,  H01L33/46 ,  H01L33/641 ,  H01L33/642 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light-emitting diode chip (1) with a semiconductor layer sequence (2) is described, which is contacted electrically by contacts (5) via a current spreading layer (3). The contacts (5) cover around 1%-8% of the surface of the semiconductor layer sequence (2). The contacts (5) consist for example of separate contact points (51), which are arranged at the nodes of a regular grid (52) with a grid constant of 12 μm. The current spreading layer (3) contains for example indium-tin oxide, indium-zinc oxide or zinc oxide and has a thickness in the range from 15 nm to 60 nm.

摘要翻译： 描述了具有半导体层序列（2）的发光二极管芯片（1），其经由电流扩展层（3）由触点（5）电接触。 触点（5）覆盖半导体层序列（2）的表面的约1％-8％。 触点（5）例如由单独的接触点（51）组成，它们布置在栅格常数为12μm的规则网格（52）的节点处。 电流扩展层（3）包含例如氧化铟锡，氧化铟锌或氧化锌，其厚度在15nm至60nm的范围内。

公开(公告)号：US20110114988A1

公开(公告)日：2011-05-19

申请号：US12922830

申请日：2009-04-28

申请人： Matthias Sabathil ,  Lutz Hoeppel ,  Andreas Weimar ,  Karl Engl ,  Johannes Baur

发明人： Matthias Sabathil ,  Lutz Hoeppel ,  Andreas Weimar ,  Karl Engl ,  Johannes Baur

IPC分类号： H01L33/38

CPC分类号： H01L33/387 ,  H01L33/42 ,  H01L33/46 ,  H01L33/641 ,  H01L33/642 ,  H01L2924/0002 ,  H01L2924/00

摘要： A light-emitting diode chip (1) with a semiconductor layer sequence (2) is described, which is contacted electrically by contacts (5) via a current spreading layer (3). The contacts (5) cover around 1%-8% of the surface of the semiconductor layer sequence (2). The contacts (5) consist for example of separate contact points (51), which are arranged at the nodes of a regular grid (52) with a grid constant of 12 μm. The current spreading layer (3) contains for example indium-tin oxide, indium-zinc oxide or zinc oxide and has a thickness in the range from 15 nm to 60 nm.

摘要翻译： 描述了具有半导体层序列（2）的发光二极管芯片（1），其经由电流扩展层（3）由触点（5）电接触。 触点（5）覆盖半导体层序列（2）的表面的约1％-8％。 触点（5）例如分开接触点（51），它们布置在格子常数为12μm的规则网格（52）的节点处。 电流扩展层（3）包含例如氧化铟锡，氧化铟锌或氧化锌，其厚度在15nm至60nm的范围内。

公开(公告)号：US07205578B2

公开(公告)日：2007-04-17

申请号：US10203728

申请日：2001-02-15

申请人： Dominik Eisert ,  Volker Härle ,  Frank Kühn ,  Manfred Mundbrod-Vangerow ,  Uwe Strauss ,  Jacob Ulrich ,  Ernst Nirschl ,  Norbert Linder ,  Reinhard Sedlmeier ,  Ulrich Zehnder ,  Johannes Baur

发明人： Dominik Eisert ,  Volker Härle ,  Frank Kühn ,  Manfred Mundbrod-Vangerow ,  Uwe Strauss ,  Jacob Ulrich ,  Ernst Nirschl ,  Norbert Linder ,  Reinhard Sedlmeier ,  Ulrich Zehnder ,  Johannes Baur

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L21/32139 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/42 ,  H01L33/46

摘要： This invention describes a radiation-emitting semiconductor component with the a multilayered structure (4) that contains a radiation-emitting active layer (5), and a window (1) transparent to radiation that has a first principal face (2) and a second principal face (3) opposite the first principal face (2), and whose first principal face (2) adjoins the multilayered structure (4).At least one recess (8) is made in the window (1), which preferably has the form of an indentation of the second principal face or as an edge excavation. At least one lateral surface of the window (1) or of the recess (8) is provided at least partially with a contact surface (11). Alternatively or cumulatively, at least one contact surface of the component has a plurality of openings (14).

摘要翻译： 本发明描述了一种具有多层结构（4）的辐射发射半导体部件，其包含发射有辐射的有源层（5）和对具有第一主面（2）和第二主面（2）的辐射透明的窗口 主面（3）与第一主面（2）相对，并且其第一主面（2）与多层结构（4）相邻。

公开(公告)号：US20060237734A1

公开(公告)日：2006-10-26

申请号：US10567935

申请日：2004-08-19

申请人： Johannes Baur ,  Berthold Hahn ,  Volker Harle

发明人： Johannes Baur ,  Berthold Hahn ,  Volker Harle

IPC分类号： H01L33/00

CPC分类号： H01L33/44 ,  H01L33/22 ,  H01L33/405 ,  H01L2933/0083 ,  H01L2933/0091

摘要： A thin-layer LED chip (5) is claimed, comprising an epitaxial layer sequence (6) that is disposed on a carrier element (2) and contains an electromagnetic-radiation-generating active region (8), and a reflective layer (3) that is disposed on a principal surface of the epitaxial layer sequence (6) facing toward the carrier element (2) and reflects at least a portion of the electromagnetic radiation generated in the epitaxial layer sequence (6) back thereinto, in which a structured layer (1) containing a glass material is applied to a radiation extraction surface (7) of the epitaxial layer sequence (6) facing away from said carrier element (2) and has a structure that includes mutually adjacent protuberances (5) that taper in the direction away from the radiation extraction surface (7) and have a lateral grid size that is smaller than one wavelength of an electromagnetic radiation emitted from the epitaxial layer sequence (6). The structured layer (1) is advantageously applied as spin-on glass and structured by grayscale lithography.

摘要翻译： 要求保护薄层LED芯片（5），其包括设置在载体元件（2）上并包含电磁辐射生成有源区（8）的外延层序列（6）和反射层 ），其设置在面向载体元件（2）的外延层序列（6）的主表面上，并将在外延层序列（6）中产生的电磁辐射的至少一部分反射回到其中，其中结构化 将包含玻璃材料的层（1）施加到外延层序列（6）的远离所述载体元件（2）的辐射提取表面（7）上，并且具有包括彼此相邻的突起（5）的结构， 离开辐射提取表面（7）的方向并且具有小于从外延层序列（6）发射的电磁辐射的一个波长的横向网格尺寸。 结构化层（1）有利地作为旋涂玻璃施加，并通过灰度平版印刷法构成。

公开(公告)号：US08138511B2

公开(公告)日：2012-03-20

申请号：US11567977

申请日：2006-12-07

申请人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Härle ,  Marianne Ortmann ,  Uwe Strauss ,  Johannes Völkl ,  Ulrich Zehnder

发明人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Härle ,  Marianne Ortmann ,  Uwe Strauss ,  Johannes Völkl ,  Ulrich Zehnder

IPC分类号： H01L21/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/02 ,  H01L2224/48091 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/00014

摘要： A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.

摘要翻译： 辐射发射半导体组件具有改进的辐射效率。 半导体部件具有多层结构，其具有用于在多层结构内产生辐射的有源层，以及具有第一和第二主表面的窗口。 多层结构邻接窗口的第一主表面。 为了提高辐射效率，至少一个凹槽（例如沟槽或凹坑）从第二主表面形成在窗口中。 凹部优选地具有朝向第一主表面渐缩的梯形横截面，并且可以例如通过锯入窗口来制造。

公开(公告)号：US07592636B2

公开(公告)日：2009-09-22

申请号：US10529625

申请日：2003-09-23

申请人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle

发明人： Johannes Baur ,  Dominik Eisert ,  Michael Fehrer ,  Berthold Hahn ,  Volker Harle

IPC分类号： H01L21/00 ,  H01L23/495

CPC分类号： H01L33/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： A radiation-emitting semiconductor component having a radiation-transmissive substrate (1), on the underside of which a radiation-generating layer (2) is arranged, in which the substrate (1) has inclined side areas (3), in which the refractive index of the substrate (1) is greater than the refractive index of the radiation-generating layer, in which the difference in refractive index results in an unilluminated substrate region (4), into which no photons are coupled directly from the radiation-generating layer, and in which the substrate (1) has essentially perpendicular side areas (5) in the unilluminated region. The component has the advantage that it can be produced with a better area yield from a wafer.

摘要翻译： 一种具有辐射透射性衬底（1）的辐射发射半导体部件，其底部布置有辐射产生层（2），其中衬底（1）具有倾斜的侧面区域（3），其中 衬底（1）的折射率大于辐射产生层的折射率，其中折射率差导致未发射的衬底区域（4），其中没有光子直接从辐射产生层 层，并且其中衬底（1）在未发光区域中具有基本上垂直的侧面区域（5）。 该组件的优点是可以从晶片获得更好的面积产率。

公开(公告)号：US20090212307A1

公开(公告)日：2009-08-27

申请号：US11921530

申请日：2006-06-02

申请人： Johannes Baur ,  Volker Hárle ,  Berthold Hahn ,  Andreas Weimar ,  Raimund Oberschmid ,  Ewald Karl Michael Guenther ,  Franz Eberhard ,  Markus Richter ,  Jörg Strauss

发明人： Johannes Baur ,  Volker Hárle ,  Berthold Hahn ,  Andreas Weimar ,  Raimund Oberschmid ,  Ewald Karl Michael Guenther ,  Franz Eberhard ,  Markus Richter ,  Jörg Strauss

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a luminescence diode chip having a radiation exit area (1) and a contact structure (2, 3, 4) which is arranged on the radiation exit area (1) and comprises a bonding pad (4) and a plurality of contact webs (2, 3) which are provided for current expansion and are electrically conductively connected to the bonding pad (4), the bonding pad (4) is arranged in an edge region of the radiation exit area (1). The luminescence diode chip has reduced absorption of the emitted radiation (23) in the contact structure (2, 3, 4).

摘要翻译： 在具有辐射出射区域（1）的发光二极管芯片和设置在辐射出口区域（1）上的接触结构（2,3,4），并且包括接合焊盘（4）和多个接触腹板 2，3），其被设置用于电流膨胀并且导电连接到焊盘（4），焊盘（4）布置在辐射出口区域（1）的边缘区域中。 发光二极管芯片减少了接触结构（2,3,4）中发射的辐射（23）的吸收。

公开(公告)号：US20070145402A1

公开(公告)日：2007-06-28

申请号：US11684347

申请日：2007-03-09

申请人： Dominik Eisert ,  Volker Harle ,  Frank Kuhn ,  Manfred Mundbrod-Vangerow ,  Uwe Strauss ,  Jacob Ulrich ,  Ernst Nirschl ,  Norbert Linder ,  Reinhard Sedlmeier ,  Ulrich Zehnder ,  Johannes Baur

发明人： Dominik Eisert ,  Volker Harle ,  Frank Kuhn ,  Manfred Mundbrod-Vangerow ,  Uwe Strauss ,  Jacob Ulrich ,  Ernst Nirschl ,  Norbert Linder ,  Reinhard Sedlmeier ,  Ulrich Zehnder ,  Johannes Baur

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L21/32139 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/32 ,  H01L33/382 ,  H01L33/42 ,  H01L33/46

摘要： This invention describes a radiation-emitting semiconductor component with the a multilayered structure that contains a radiation-emitting active layer, and a window transparent to radiation that has a first principal face and a second principal face opposite the first principal face, and whose first principal face adjoins the multilayered structure. At least one recess is made in the window, which preferably has the form of an indentation of the second principal face or as an edge excavation. At least one lateral surface of the window or of the recess is provided at least partially with a contact surface. Alternatively or cumulatively, at least one contact surface of the component has a plurality of openings.

摘要翻译： 本发明描述了一种具有多层结构的辐射发射半导体部件，该多层结构包含发射有辐射的活性层和对辐射透明的窗口，该窗口具有与第一主面相对的第一主面和第二主面，并且其第一主体 面临着多层结构。 在窗口中至少形成一个凹槽，其优选地具有第二主面的凹陷的形式或者作为边缘挖掘。 窗口或凹部的至少一个侧表面至少部分地设置有接触表面。 或者或累积地，部件的至少一个接触表面具有多个开口。