公开(公告)号：US20150318038A1

公开(公告)日：2015-11-05

申请号：US14266456

申请日：2014-04-30

Applicant: Micron Technology, Inc.

Inventor： Yongjun Jeff Hu ,  Tsz W. Chan ,  Christopher W. Petz ,  Everett Allen McTeer

IPC: G11C13/00 ,  H01L27/24 ,  H01L45/00

CPC classification number: G11C13/0004 ,  G11C2213/35 ,  G11C2213/52 ,  G11C2213/71 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/145 ,  H01L45/148 ,  H01L45/1625 ,  H01L45/1675

Abstract: Memory devices and methods for fabricating memory devices have been disclosed. One such method includes forming a memory stack out of a plurality of elements. A sidewall liner is formed on a sidewall of the memory stack using a physical vapor deposition (PVD) process, including an adhesion species and a dielectric, such that the adhesion species intermixes with an element of the memory stack to terminate unsatisfied atomic bonds of the element and the dielectric forms a dielectric film with the adhesive species on the sidewall.

Abstract translation: 已经公开了用于制造存储器件的存储器件和方法。 一种这样的方法包括从多个元件形成存储器堆叠。 使用包括粘附物质和电介质的物理气相沉积（PVD）工艺在存储器堆叠的侧壁上形成侧壁衬里，使得粘附物质与存储器堆叠的元件混合以终止不满足的原子键 元件，并且电介质形成具有侧壁上的粘合剂种类的介电膜。