Targeting shoppers in an online shopping environment
    62.
    发明申请
    Targeting shoppers in an online shopping environment 审中-公开
    在线购物环境中定位购物者

    公开(公告)号:US20050096997A1

    公开(公告)日:2005-05-05

    申请号:US10699173

    申请日:2003-10-31

    CPC classification number: G06Q30/02 G06Q30/0601

    Abstract: Within an online shopping environment, a hosting server supports shoppers and merchants from whom the shoppers purchase goods or services. The hosting server enables an individual user to shop or browse the merchant sites and also enables a group of users to coordinate their shopping or browsing activities. A set of profiling tools build separate profiles based on individual and group shopper activity, as well as the interaction of an individual shopper with one or more groups of shoppers. A targeting tool uses the shopper profiles and information regarding previous promotions (if any) from a promotions library to make recommendations to individual shoppers and shopper groups based also on parameters specified by the merchant/s. The recommendations are directed to shoppers, in accordance with algorithms stored in a repository.

    Abstract translation: 在网络购物环境中,托管服务器支持购物者和购物者从中购买商品或服务的商家。 托管服务器使得个人用户能够购物或浏览商家站点,并且还使一组用户能够协调其购物或浏览活动。 一组分析工具基于个人和团体购物者活动以及个人购物者与一组或多组购物者的互动构建单独的配置文件。 目标工具使用购物者资料和关于促销图书馆以前促销(如果有的话)的信息,还可以根据商家指定的参数向个人购物者和购物者组提出建议。 根据存储在存储库中的算法,这些建议针对购物者。

    Method improving integrated circuit planarization during etchback

    公开(公告)号:US5496774A

    公开(公告)日:1996-03-05

    申请号:US363062

    申请日:1994-12-21

    CPC classification number: H01L21/76819

    Abstract: An integrated circuit fabrication method begins with semiconductor devices formed on a substrate. A patterned metal layer is deposited on the substrate to connect the semiconductor devices. A nitride layer is deposited over the metal layer and substrate. The nitride layer topography comprises hills located over metal regions and valleys located over non-metal regions. Spin-on-glass (SOG) is deposited over the nitride layer, thereby filling the valleys and covering the hills. The SOG layer and the nitride layer hills are etched back at substantially the same etch rate, using plasma etching, to form a planar surface. An oxide layer is then deposited over the planar surface to encapsulate the semiconductor devices, metal layer, nitride layer and SOG layer. Vias may then be etched through the oxide layer and the nitride layer to expose portions of the underlying metal layer and facilitate upper layer metal connections thereto. A second metal layer is deposited on the oxide layer and the fabrication process continues until the integrated circuit is complete.

    Method for making cusp-free anti-fuse structures
    65.
    发明授权
    Method for making cusp-free anti-fuse structures 失效
    制造无尖锐反熔丝结构的方法

    公开(公告)号:US5328865A

    公开(公告)日:1994-07-12

    申请号:US11084

    申请日:1993-01-29

    CPC classification number: H01L23/5252 H01L21/76888 H01L2924/0002

    Abstract: A method for making an anti-fuse structure characterized by the steps of forming a conductive base layer; forming an anti-fuse layer over the base layer; patterning the anti-fuse layer to form an anti-fuse island; forming an insulating layer over the anti-fuse island; forming a via hole through the insulating layer to the anti-fuse island; forming a conductive connection layer over the insulating layer and within the via hole; and patterning the conductive connection layer to form a conductive contact to the anti-fuse island. Preferably, the anti-fuse island comprises amorphous silicon which can optionally be covered with a thin layer of a titanium-tungsten alloy.

    Abstract translation: 一种制造抗熔丝结构的方法,其特征在于形成导电基层的步骤; 在基层上形成抗熔丝层; 图案化抗熔丝层以形成抗熔丝岛; 在反熔丝岛上形成绝缘层; 形成通过所述绝缘层到所述反熔丝岛的通孔; 在所述绝缘层上并在所述通孔内形成导电连接层; 以及图案化所述导电连接层以形成与所述反熔丝岛的导电接触。 优选地,抗熔丝岛包括非晶硅,其可任选地被钛 - 钨合金的薄层覆盖。

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