公开(公告)号：US20060150108A1

公开(公告)日：2006-07-06

申请号：US11275349

申请日：2005-12-28

申请人： KEIJI ADACHI ,  Shigehiro Kadota ,  Noriaki Sato

发明人： KEIJI ADACHI ,  Shigehiro Kadota ,  Noriaki Sato

IPC分类号： G06F9/00

CPC分类号： G09G5/14

摘要： To easily and optimally display data output from plural connected information terminals on a display device based on display attribute information given with respect to each output data, an information processing device, which calculates similarity of different image data and can connect the different image data to one display device and two or more information terminals, is characterized by comprising a data acquisition unit to acquire the data output from the information terminal, a display attribute information acquisition unit to acquire the display attribute information corresponding to the output data acquired by the data acquisition unit, an update unit to update the display attribute information acquired by the display attribute information acquisition unit, and a display control unit to control the display of the output data on the display device based on the relevant display attribute information.

摘要翻译： 基于对于每个输出数据给出的显示属性信息，在显示装置上容易且最佳地显示从多个连接的信息终端输出的数据，信息处理装置，其计算不同图像数据的相似度并且可以将不同的图像数据连接到一个 显示装置和两个或更多个信息终端，其特征在于包括：数据获取单元，用于获取从信息终端输出的数据;显示属性信息获取单元，用于获取与由数据获取单元获取的输出数据相对应的显示属性信息 更新单元，用于更新由显示属性信息获取单元获取的显示属性信息;以及显示控制单元，用于基于相关的显示属性信息来控制显示设备上的输出数据的显示。

公开(公告)号：US06934499B1

公开(公告)日：2005-08-23

申请号：US10668302

申请日：2003-09-24

申请人： Noriaki Sato ,  Hideo Nanataki ,  Tomio Noguchi ,  Naoki Enomoto

发明人： Noriaki Sato ,  Hideo Nanataki ,  Tomio Noguchi ,  Naoki Enomoto

IPC分类号： G03G15/16 ,  G03G15/00

CPC分类号： G03G15/755 ,  G03G15/1605

摘要： An image forming apparatus includes a first image bearing member carrying a toner image, and a movable second image bearing member carrying a toner image. The toner image on the first image bearing member is transferred to the second image bearing member at a first transfer portion, and the toner image on the second image bearing member is transferred to a transfer material at a second transfer portion. The apparatus also includes a charging member contacting the second image bearing member arranged on a downstream side of the second transfer portion and on an upstream side of the first transfer portion in a moving direction of the second image bearing member, and a mark portion having a thickness and being formed on the second image bearing member. A contact region between the charging member and the second image bearing member does not overlap with the mark portion in a direction perpendicular to the moving direction of the second image bearing member.

摘要翻译： 图像形成装置包括承载调色剂图像的第一图像承载部件和携带调色剂图像的可动第二图像承载部件。 第一图像承载部件上的调色剂图像在第一转印部分被转印到第二图像承载部件，并且第二图像承载部件上的调色剂图像在第二转印部分被转印到转印材料上。 该装置还包括充电构件，其与第二图像承载构件接触，该第二图像承载构件布置在第二转印部分的下游侧，并且在第二图像承载构件的移动方向上与第一转印部分的上游侧，以及具有 并且形成在第二图像承载部件上。 充电构件和第二图像承载构件之间的接触区域在与第二图像承载构件的移动方向垂直的方向上不与标记部分重叠。

公开(公告)号：US06879801B2

公开(公告)日：2005-04-12

申请号：US10372308

申请日：2003-02-25

申请人： Takamitsu Soda ,  Naoki Enomoto ,  Takao Kume ,  Koichi Suzuki ,  Noriaki Sato

发明人： Takamitsu Soda ,  Naoki Enomoto ,  Takao Kume ,  Koichi Suzuki ,  Noriaki Sato

IPC分类号： G03G15/02 ,  G03G15/01

CPC分类号： G03G15/0216 ,  G03G2215/021

摘要： An image forming apparatus includes a first image bearing member and a second shiftable image bearing member. A first transferring member transfers a toner image formed on the first image bearing member to the second image bearing member at a first region. A second transferring member transfers a toner image formed on the second image bearing member to a transferring material at a second region. A first electrifier is provided downstream of the second region and upstream of the first region in a shifting direction of the second image bearing member. A second electrifier is provided downstream of the second region and upstream of the first electrifier in the shifting direction. A voltage applying unit applies a voltage to the first and second electrifiers to transfer toner adhered to the first and second electrifiers onto the second image bearing member.

摘要翻译： 图像形成装置包括第一图像承载部件和第二可移动图像承载部件。 第一传送部件在第一区域将形成在第一图像承载部件上的调色剂图像转印到第二图像承载部件。 第二转印部件将形成在第二图像承载部件上的调色剂图像转印到第二区域的转印材料。 在第二图像承载部件的移动方向上，在第二区域的下游侧和第一区域的上游设置有第一带电装置。 第二电气设置在第二区域的下游并且在移动方向上设置在第一电气设备的上游。 电压施加单元向第一和第二电气装置施加电压以将附着到第一和第二电气装置上的调色剂转印到第二图像承载部件上。

公开(公告)号：US06377763B2

公开(公告)日：2002-04-23

申请号：US09500027

申请日：2000-02-08

申请人： Noriaki Sato

发明人： Noriaki Sato

IPC分类号： G03G1500

CPC分类号： G03G15/5058 ,  G03G15/0194 ,  G03G15/5041 ,  G03G15/6591 ,  G03G2215/00042 ,  G03G2215/00059 ,  G03G2215/00497 ,  G03G2215/0062 ,  G03G2215/00949 ,  G03G2215/0119 ,  G03G2215/2045

摘要： In an image formation apparatus which slows down fixing speed and processing speed when it forms an image on an OHP transparent sheet, a board, a gloss sheet or the like, an image for measurement is formed on a photosensitive body at ordinary processing speed, the density of the formed image is measured, an image formation condition is determined based on the measured result, and the determined condition is stored as the image formation condition for the ordinary processing speed. The image formation condition for low speed is determined based on the stored image formation condition and a previously stored correction coefficient, thereby making formation of the image for measurement used to determine the image formation condition for low speed unnecessary.

摘要翻译： 在图像形成装置中，当在OHP透明片材，板材，光泽片材等上形成图像时，其定影速度和处理速度降低，在感光体上以普通处理速度形成测量图像， 测量形成的图像的浓度，基于测量结果确定图像形成条件，并且将所确定的条件存储为用于普通处理速度的图像形成条件。 基于存储的图像形成条件和预先存储的校正系数来确定低速图像形成条件，从而形成用于确定低速图像形成条件的测量用图像。

公开(公告)号：US5753386A

公开(公告)日：1998-05-19

申请号：US721057

申请日：1996-09-26

申请人： Takamichi Inaba ,  Takao Sawa ,  Shusuke Inada ,  Fumiyuki Kawashima ,  Noriaki Sato ,  Toshiya Sakamoto ,  Masami Okamura ,  Tomohisa Arai ,  Keisuke Hashimoto

发明人： Takamichi Inaba ,  Takao Sawa ,  Shusuke Inada ,  Fumiyuki Kawashima ,  Noriaki Sato ,  Toshiya Sakamoto ,  Masami Okamura ,  Tomohisa Arai ,  Keisuke Hashimoto

IPC分类号： H01M4/38 ,  H01M10/34

CPC分类号： H01M4/383 ,  H01M10/345

摘要： There is provided a hydrogen-absorbing alloy for battery comprising a rapidly-quenched alloy having the composition represented by a general formula ANi.sub.a M.sub.b M'.sub.c T.sub.d (where, A is composed of La, Ce, Pr, Nd and Y, an amount of La content in A is 50-99 wt %, an amount of Ce content is 1-30 wt %, an amount of Pr content is 0-10 wt %, an amount of Nd content is 0-10 wt % and an amount of Y content is 0-10 wt %; M is at least one element selected from Co, Fe and Cu; M' is at least one element selected from Mn and Al; T is at least one element selected from B, Si, S, Cr, Ga, Ge, Mo, Ru, Rh, Pd, Ag, In, Sn, Sb, Bi, P, V, Nb, Ta and W; and a, b, c and d are atomic ratios and satisfy 3.2.ltoreq.a.ltoreq.4.0, 0.4.ltoreq.b.ltoreq.1.0, 0.3.ltoreq.c.ltoreq.0.8, 0.ltoreq.d.ltoreq.0.2, 4.9.ltoreq.a+b+c+d.ltoreq.5.4), characterized in that a hydrogen equilibrium pressure when the number of hydrogen atoms absorbed by one atom of the alloy at a temperature of 60.degree. C. is 0.4 is 0.05-0.6 atm. With the above arrangement, a hydrogen-absorbing alloy capable of realizing a small decrease in capacity under the low-temperature area and high-temperature area, a large electrode capacity in a wide temperature range, and a long life, and a secondary nickel-metal hydride battery using this alloy can be obtained.

摘要翻译： 提供一种电池用吸氢合金，其特征在于，具有由通式ANiaMbM'cTd（其中，A由La，Ce，Pr，Nd和Y构成的组成）的快淬合金， A为50〜99重量％，Ce含量为1-30重量％，Pr含量为0〜10重量％，Nd含量为0〜10重量％，Y含量为 0〜10重量％; M为选自Co，Fe和Cu中的至少一种元素; M'为选自Mn和Al中的至少一种元素; T为选自B，Si，S，Cr，Ga中的至少一种元素 ，Ge，Mo，Ru，Rh，Pd，Ag，In，Sn，Sb，Bi，P，V，Nb，Ta和W; a，b，c和d为原子比，满足3.2 < /=4.0,0.4

公开(公告)号：US5731237A

公开(公告)日：1998-03-24

申请号：US593276

申请日：1996-01-29

申请人： Noriaki Sato

发明人： Noriaki Sato

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L21/762 ,  H01L21/8247 ,  H01L27/115

CPC分类号： H01L27/11521 ,  H01L21/28273 ,  H01L21/76202 ,  H01L21/76235 ,  H01L27/115 ,  H01L29/66825

摘要： An EPROM allowing a miniaturization of an isolation region (a field insulating layer) without generating a parasitic transistor. The EPROM comprises a semiconductor substrate; a field insulating layer defining a device formation region of the semiconductor substrate; a gate insulating layer; a floating gate formed on the field insulating layer and the field insulating layer; a trench insulating layer extending into the semiconductor substrate at the center portion of the field insulating layer, one of the side walls of the trench insulating layer being self-aligned with the end face of the floating gate; a first interlaminar insulating layer covering the floating gate; a control gate located above the floating gate; a second interlaminar insulating layer formed over the whole surface; and a bit line.

摘要翻译： EPROM允许隔离区域（场绝缘层）的小型化而不产生寄生晶体管。 EPROM包括半导体衬底; 限定半导体衬底的器件形成区域的场绝缘层; 栅极绝缘层; 形成在场绝缘层和场绝缘层上的浮栅; 在所述场绝缘层的中心部分延伸到所述半导体衬底中的沟槽绝缘层，所述沟槽绝缘层的一个侧壁与所述浮动栅极的端面自对准; 覆盖所述浮动栅极的第一层间绝缘层; 位于浮动门上方的控制门; 在整个表面上形成的第二层间绝缘层; 和一点。

公开(公告)号：US5589410A

公开(公告)日：1996-12-31

申请号：US279205

申请日：1994-07-22

申请人： Noriaki Sato ,  Fumitake Mieno

发明人： Noriaki Sato ,  Fumitake Mieno

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/10 ,  H01L21/265

CPC分类号： H01L29/66651 ,  H01L21/823807 ,  H01L27/0928 ,  H01L29/1033 ,  H01L29/1083

摘要： A structure and its fabrication method of an integrated semiconductor device including circuit elements such as MOSFETs. A well is formed in the semiconductor substrate within windows of a field oxide layer. A lightly-doped semiconductor layer is selectively formed on the exposed surface of the well. A channel region and a pair of source and drain regions of a MOSFET are formed in the lightly-doped semiconductor layer. The highly-doped buried semiconductor layer of the same conductivity type as that of the lightly-doped semiconductor layer is formed under the channel region in the lightly-doped semiconductor layer. The structural features and fabrication method provides a great degree of freedom in designing a MOSFET having a further shorter-channel length without deteriorating its drivability and punch-through breakdown voltage.

摘要翻译： 包括诸如MOSFET的电路元件的集成半导体器件的结构及其制造方法。 在场氧化物层的窗口内的半导体衬底中形成阱。 在井的暴露表面上选择性地形成轻掺杂半导体层。 MOSFET的沟道区域和一对源极和漏极区域形成在轻掺杂半导体层中。 与轻掺杂半导体层相同的导电类型的高掺杂掩模半导体层形成在轻掺杂半导体层的沟道区的下方。 结构特征和制造方法在设计具有更短通道长度的MOSFET的同时提供了很大的自由度，而不会降低其驱动能力和穿通击穿电压。

公开(公告)号：US5362981A

公开(公告)日：1994-11-08

申请号：US699

申请日：1993-01-05

申请人： Noriaki Sato ,  Fumitake Mieno

发明人： Noriaki Sato ,  Fumitake Mieno

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/10 ,  H01L27/02 ,  H01L27/04 ,  H01L27/12

CPC分类号： H01L29/66651 ,  H01L21/823807 ,  H01L27/0928 ,  H01L29/1033 ,  H01L29/1083

摘要： A structure and its fabrication method of an integrated semiconductor device including circuit elements such as MOSFETs. A well is formed in the semiconductor substrate within windows of a field oxide layer. A lightly-doped semiconductor layer is selectively formed on the exposed surface of the well. A channel region and a pair of source and drain regions of a MOSFET are formed in the lightly-doped semiconductor layer. The highly-doped buried semiconductor layer of the same conductivity type as that of the lightly-doped semiconductor layer is formed under the channel region in the lightly-doped semiconductor layer. The structural features and fabrication method provides a great degree of freedom in designing a MOSFET having a further shorter-channel length without deteriorating its drivability and punch-through breakdown voltage.

摘要翻译： 包括诸如MOSFET的电路元件的集成半导体器件的结构及其制造方法。 在场氧化物层的窗口内的半导体衬底中形成阱。 在井的暴露表面上选择性地形成轻掺杂半导体层。 MOSFET的沟道区域和一对源极和漏极区域形成在轻掺杂半导体层中。 与轻掺杂半导体层相同的导电类型的高掺杂掩模半导体层形成在轻掺杂半导体层的沟道区的下方。 结构特征和制造方法在设计具有更短通道长度的MOSFET的同时提供了很大的自由度，而不会降低其驱动能力和穿通击穿电压。

公开(公告)号：US4996015A

公开(公告)日：1991-02-26

申请号：US353328

申请日：1989-05-16

申请人： Masafumi Yoshimoto ,  Tadao Nakatsuji ,  Noriaki Sato

发明人： Masafumi Yoshimoto ,  Tadao Nakatsuji ,  Noriaki Sato

IPC分类号： C04B38/00 ,  B01J35/04 ,  B01J37/00 ,  C04B35/634 ,  C04B35/638

CPC分类号： C04B35/63488 ,  B01J35/04 ,  B01J37/0018 ,  C04B35/634 ,  C04B35/638

摘要： A method of producing ceramic honeycomb structures which comprises: the first step of preparing a ceramic plastic composition which comprises admixing and kneading a ceramic material with water, a polyalkylene glycol monoether and an organic binder; the second step of extruding the ceramic plastic composition into a wet green mold of a honeycomb structure having openings extending therethrough; the third step of passing a high humidity air through the openings to evaporate the substantial amount of the water in the green mold; the fourth step of passing heated air to evaporate the substantial amount of the polyalkylene glycol monoether from the green mold; and the fifth step of calcining the mold.The method is suitably applicable to the production of ceramic honeycomb structures as a catalyst structure or a catalyst carrier structure therefor which contains a material acting as an oxidation catalyst.

摘要翻译： 一种生产陶瓷蜂窝结构体的方法，包括：制备陶瓷塑料组合物的第一步骤，其包括将陶瓷材料与水混合和捏合，聚亚烷基二醇单醚和有机粘合剂; 将陶瓷塑料组合物挤出到具有延伸穿过其中的开口的蜂窝结构的湿绿色模具中的第二步骤; 使高湿度空气通过开口以蒸发大量的生坯中的水的第三步骤; 通过加热空气从生坯中蒸发大量聚亚烷基二醇单醚的第四步骤; 和第五步煅烧模具。 该方法适用于生产作为催化剂结构的陶瓷蜂窝结构体或其催化剂载体结构，其含有作为氧化催化剂的材料。

公开(公告)号：US4782466A

公开(公告)日：1988-11-01

申请号：US902675

申请日：1986-09-02

申请人： Satoru Yamaguchi ,  Kunihiko Wada ,  Noriaki Sato

发明人： Satoru Yamaguchi ,  Kunihiko Wada ,  Noriaki Sato

IPC分类号： G11C17/00 ,  G11C17/04 ,  H01L27/102 ,  H01L27/112 ,  H01L27/115 ,  G11C11/24

CPC分类号： H01L27/112 ,  G11C17/04 ,  H01L27/1026 ,  H01L27/115

摘要： A programmable semiconductor read only memory device which includes a memory cell array formed by a plurality of memory cells arranged in a matrix arrangement. Each memory cell in the memory cell array includes a transistor having a gate thereof coupled to a word line, and a capacitor having an insulator layer, having a first terminal coupled to a bit line and having a second terminal coupled to the transistor so that the capacitor is grounded via the transistor. The insulator layer of the capacitor of a selected memory cell breaks down when a specific word line and a specific bit line coupled to the selected memory cell are driven, thereby making the capacitor conductive.

摘要翻译： 一种可编程半导体只读存储器件，其包括由以矩阵排列布置的多个存储单元形成的存储单元阵列。 存储单元阵列中的每个存储单元包括晶体管，其晶体管具有耦合到字线的栅极，以及具有绝缘体层的电容器，其具有耦合到位线的第一端子，并具有耦合到晶体管的第二端子， 电容通过晶体管接地。 当选择的存储单元的电容器的绝缘层被驱动时，特定的字线和与所选择的存储单元耦合的特定位线被驱动，从而使电容器导通。