PLASMA DISPLAY PANEL
    61.
    发明申请
    PLASMA DISPLAY PANEL 审中-公开
    等离子显示面板

    公开(公告)号:US20110175554A1

    公开(公告)日:2011-07-21

    申请号:US12990197

    申请日:2010-03-29

    CPC classification number: H01J11/40 H01J11/12

    Abstract: The present invention aims to provide a plasma display panel that can be driven at low voltage and can offer favorable image display performance. In order to achieve the aim, on a surface of the front panel 1 on which the display electrode 5 is formed, the protective layer 7 made by using a crystalline oxide material that contains a crystalline oxide selected from the group consisting of (i) at least one of SrCeO3 and BaCeO3 and (ii) a solid solution of SrCeO3 and BaCeO3 is disposed so as to face the discharge space 14. By using the crystalline oxide material that contains the crystalline oxide selected from the group consisting of (i) at least one of SrCeO3 and BaCeO3 and (ii) a solid solution of SrCeO3 and BaCeO3, chemical stability can be improved without reducing secondary electron emission efficiency. A PDP capable of lowering drive voltage compared with a case where MgO is used can be obtained by using the crystalline oxide material.

    Abstract translation: 本发明的目的在于提供一种能够以低电压驱动的等离子体显示面板,能够提供良好的图像显示性能。 为了达到目的,在其上形成有显示电极5的前面板1的表面上,使用包含选自以下的结晶氧化物的结晶氧化物材料制成的保护层7:(i) 将SrCeO 3和BaCeO 3中的至少一种和(ii)SrCeO 3和BaCeO 3的固溶体设置成面对放电空间14.通过使用含有选自以下的结晶氧化物的结晶氧化物材料:(i)至少 SrCeO3和BaCeO3之一,(ii)SrCeO3和BaCeO3的固溶体,可以提高化学稳定性,而不会降低二次电子发射效率。 通过使用结晶性氧化物材料,可以得到与使用MgO的情况相比能够降低驱动电压的PDP。

    Plasma display panel and method of producing the same
    62.
    发明授权
    Plasma display panel and method of producing the same 失效
    等离子显示面板及其制造方法

    公开(公告)号:US07834551B2

    公开(公告)日:2010-11-16

    申请号:US11555495

    申请日:2006-11-01

    CPC classification number: H01J11/12 C03C3/066 C03C3/145 C03C8/04 H01J11/38

    Abstract: A plasma display panel of the present invention includes display electrodes and address electrodes that cross each other. The electrode to be covered with the first dielectric layer contains at least one selected from silver and copper. The first glass contains Bi2O3. The first glass further contains 0 to 4 wt % of MoO3 and 0 to 4 wt % of WO3, and the total of the contents of MoO3 and WO3 that are contained in the first glass is in a range of 0.1 to 8 wt %. The first glass may contain, as components thereof: 0 to 15 wt % SiO2; 10 to 50 wt % B2O3; 15 to 50 wt % ZnO; 0 to 10 wt % Al2O3; 2 to 40 wt % Bi2O3; 0 to 5 wt % MgO; 5 to 38 wt % CaO+SrO+BaO; 0 to 4 wt % MoO3; and 0 to 4 wt % WO3, and the total of the contents of MoO3 and WO3 that are contained in the first glass is in the range of 0.1 to 8 wt %.

    Abstract translation: 本发明的等离子体显示面板包括彼此交叉的显示电极和地址电极。 被第一介电层覆盖的电极含有选自银和铜中的至少一种。 第一个玻璃含有Bi2O3。 第一玻璃还含有0〜4重量%的MoO 3和0〜4重量%的WO 3,第一玻璃中含有的MoO 3和WO 3的含量的总和为0.1〜8重量%。 作为其成分,第一玻璃可以含有0〜15重量%的SiO 2; 10〜50重量%的B2O3; 15〜50wt%的ZnO; 0〜10重量%的Al 2 O 3; 2〜40重量%Bi 2 O 3; 0〜5重量%的MgO; 5〜38重量%CaO + SrO + BaO; 0至4重量%的MoO 3; 和0〜4重量%的WO 3,第一玻璃中含有的MoO 3,WO 3的含量的合计为0.1〜8重量%。

    GLASS COMPOSITION AND DISPLAY PANEL USING THE SAME
    63.
    发明申请
    GLASS COMPOSITION AND DISPLAY PANEL USING THE SAME 有权
    玻璃组合物和使用它的显示面板

    公开(公告)号:US20090160334A1

    公开(公告)日:2009-06-25

    申请号:US12094340

    申请日:2006-11-02

    Abstract: A glass composition of the present invention is an oxide glass, in which the percentages of elements except for oxygen (O) contained therein are as follows, in terms of atom %: the amount of boron (B) exceeds 72% but does not exceed 86%, the total amount of lithium (Li), sodium (Na), and potassium (K) is 8% to 20%, the total amount of magnesium (Mg), calcium (Ca), strontium (Sr), and barium (Ba) is 1% to 8%, the amount of silicon (Si) is from 0% to less than 15%, and the amount of zinc (Zn) is from 0% to less than 2%. This glass composition further may contain molybdenum (Mo) and/or tungsten (W) in the range of more than 0% but not more than 3%.

    Abstract translation: 本发明的玻璃组合物是氧化物玻璃,其中除了氧(O)以外的元素的百分比如下,以原子%表示:硼(B)的量超过72%但不超过 86%,锂(Li),钠(Na)和钾(K)的总量为8%〜20%,镁(Mg),钙(Ca),锶(Sr)和钡 (Ba)为1〜8%,硅(Si)的含量为0〜15%,锌(Zn)的含量为0〜2%。 该玻璃组合物还可以含有大于0%但不超过3%的钼(Mo)和/或钨(W)。

    Glass composition for covering electrodes and glass paste containing the same
    65.
    发明授权
    Glass composition for covering electrodes and glass paste containing the same 失效
    用于覆盖电极的玻璃组合物和含有其的玻璃糊剂

    公开(公告)号:US07208430B2

    公开(公告)日:2007-04-24

    申请号:US11465048

    申请日:2006-08-16

    CPC classification number: C03C3/066 C03C3/145 C03C8/04 H01J2211/38

    Abstract: A glass composition for covering electrodes of the present invention contains: 0 to 15 wt % SiO2; 10 to 50 wt % B2O3; 15 to 50 wt % ZnO; 0 to 10 wt % Al2O3; 2 to 40 wt % Bi2O3; 0 to 5 wt % MgO; 5 to 38 wt % CaO+SrO+BaO; 0 to 0.1 wt % Li2O+Na2O+K2O; 0 to 4 wt % MoO3; and 0 to 4 wt % WO3, and the total of the contents of MoO3 and WO3 is in the range of 0.1 to 8 wt %. The glass composition for covering electrodes of the present invention may contain: 0 to 2 wt % SiO2; 10 to 50 wt % B2O3; 15 to 50 wt % ZnO; 0 to 10 wt % Al2O3; 2 to 40 wt % Bi2O3; 0 to 5 wt % MgO; 5 to 38 wt % CaO+SrO+BaO; 0 to 4 wt % MoO3; and 0 to 4 wt % WO3, and the total of the contents of MoO3 and WO3 may be in the range of 0.1 to 8 wt %.

    Abstract translation: 本发明的覆盖电极用玻璃组合物含有:0〜15重量%的SiO 2; 10至50重量%B 2 O 3 3; 15〜50wt%的ZnO; 0至10重量%的Al 2 O 3 3; 2至40重量%的Bi 2 O 3 3; 0〜5重量%的MgO; 5〜38重量%CaO + SrO + BaO; 0〜0.1重量%Li 2 O + Na 2 O + K 2 O; 0至4wt%MoO 3 3; 和0至4重量%的WO 3,MoO 3 3和WO 3 3的含量的总和在0.1至8的范围内 重量%。 本发明的覆盖电极用玻璃组合物可以含有0〜2重量%的SiO 2, 10至50重量%B 2 O 3 3; 15〜50wt%的ZnO; 0至10重量%的Al 2 O 3 3; 2至40重量%的Bi 2 O 3 3; 0〜5重量%的MgO; 5〜38重量%CaO + SrO + BaO; 0至4wt%MoO 3 3; 和0〜4重量%的WO 3,MoO 3 3和WO 3的含量的总和可以在0.1〜 8重量%。

    PLASMA DISPLAY PANEL AND METHOD OF PRODUCING THE SAME
    66.
    发明申请
    PLASMA DISPLAY PANEL AND METHOD OF PRODUCING THE SAME 失效
    等离子显示面板及其制造方法

    公开(公告)号:US20070052361A1

    公开(公告)日:2007-03-08

    申请号:US11555495

    申请日:2006-11-01

    CPC classification number: H01J11/12 C03C3/066 C03C3/145 C03C8/04 H01J11/38

    Abstract: A plasma display panel of the present invention includes display electrodes and address electrodes that cross each other. The electrode to be covered with the first dielectric layer contains at least one selected from silver and copper. The first glass contains Bi2O3. The first glass further contains 0 to 4 wt % of MoO3 and 0 to 4 wt % of WO3, and the total of the contents of MoO3 and WO3 that are contained in the first glass is in a range of 0.1 to 8 wt %. The first glass may contain, as components thereof: 0 to 15 wt % SiO2; 10 to 50 wt % B2O3; 15 to 50 wt % ZnO; 0 to 10 wt % Al2O3; 2 to 40 wt % Bi2O3; 0 to 5 wt % MgO; 5 to 38 wt % CaO+SrO+BaO; 0 to 4 wt % MoO3; and 0 to 4 wt % WO3, and the total of the contents of MoO3 and WO3 that are contained in the first glass is in the range of 0.1 to 8 wt %.

    Abstract translation: 本发明的等离子体显示面板包括彼此交叉的显示电极和地址电极。 被第一介电层覆盖的电极含有选自银和铜中的至少一种。 第一个玻璃含有Bi 2 O 3 O 3。 第一玻璃还含有0至4重量%的MoO 3 3和0至4重量%的WO 3,并且MoO 3的含量的总和< 第一玻璃中含有的/ SUB&gt;和WO 3 3的比例在0.1〜8重量%的范围内。 作为其组分,第一玻璃可以含有0至15重量%的SiO 2; 10至50重量%B 2 O 3 3; 15〜50wt%的ZnO; 0至10重量%的Al 2 O 3 3; 2至40重量%的Bi 2 O 3 3; 0〜5重量%的MgO; 5〜38重量%CaO + SrO + BaO; 0至4wt%MoO 3 3; 和0〜4重量%的WO 3,第一玻璃中含有的MoO 3 3和WO 3的含量的总和是 在0.1〜8重量%的范围内。

    Fabrication method of semiconductor integrated circuit device
    67.
    发明授权
    Fabrication method of semiconductor integrated circuit device 有权
    半导体集成电路器件的制造方法

    公开(公告)号:US06686108B2

    公开(公告)日:2004-02-03

    申请号:US09964341

    申请日:2001-09-28

    CPC classification number: G03F1/32 G03F1/36 G03F7/70125 Y10S430/146

    Abstract: On the occasion of the aligning process to transfer a predetermined pattern to a semiconductor wafer by irradiating a photoresist on the semiconductor wafer with an aligning laser beam of the modified lighting via a photomask MK, the photomask MK allocating, to provide periodicity, the main apertures to transfer the predetermined pattern as the apertures formed by removing a part of the half-tone film on the mask substrate and the auxiliary apertures not resolved on the semiconductor wafer as the apertures formed by removing a part of the half-tone film is used to improve the resolution of the pattern.

    Abstract translation: 在通过经由光掩模MK照射经修改的照明的定向激光束在半导体晶片上照射光致抗蚀剂以将预定图案转印到半导体晶片的对准处理的情况下,光掩模MK分配以提供周期性的主孔 通过去除掩模基板上的半色调膜的一部分而形成的孔,并且通过将半色调膜的一部分形成的孔用于 提高模式的分辨率。

    Magnetic element and method of manufacturing the same
    69.
    发明授权
    Magnetic element and method of manufacturing the same 有权
    磁性元件及其制造方法

    公开(公告)号:US06392525B1

    公开(公告)日:2002-05-21

    申请号:US09472252

    申请日:1999-12-27

    CPC classification number: H01F27/022 H01F3/08 H01F27/34 H01F2017/048

    Abstract: A magnetic element including: a composite magnetic member A containing a metallic magnetic powder in an amount of 50-70 vol. % and a thermosetting resin in an amount of 50-30 vol. %; a magnetic member B that is at least one selected from a ferrite sintered body and a pressed-powder magnetic body of a metallic magnetic powder; and a coil. The magnetic element is characterized in that a magnetic path determined by an arrangement of the coil passes the magnetic member A and the magnetic member B in series and the coil is embedded in the magnetic member A. The present invention also provides a method for manufacturing the magnetic element.

    Abstract translation: 一种磁性元件,包括:含有50-70体积%的金属磁性粉末的复合磁性体A。 %和热固性树脂,其量为50-30vol。 %; 磁性体B,其是选自铁氧体烧结体和金属磁性粉末的压粉体磁体中的至少一种; 和线圈。 磁性元件的特征在于,由线圈的布置确定的磁路通过磁性构件A和磁性构件B串联,并且线圈被嵌入在磁性构件A中。本发明还提供了一种用于制造 磁性元件。

    Signal output circuit with reduced noise in output signal
    70.
    发明授权
    Signal output circuit with reduced noise in output signal 失效
    信号输出电路,输出信号噪声降低

    公开(公告)号:US5838186A

    公开(公告)日:1998-11-17

    申请号:US880071

    申请日:1997-06-20

    CPC classification number: H03K17/164 H03K19/00361

    Abstract: An additional MOS transistor receiving at its control electrode a signal complementary to that applied to control electrodes of MOS transistors is provided between a power supply node and a control electrode line formed by resistors having a significant resistance and interconnecting respective control electrodes of MOS transistors which are connected in parallel and each of which is connected between output signal line and power supply node. When MOS transistors are rendered non-conductive, the additional MOS transistor is rendered conductive. As a result, internal nodes are driven by an inverter and the additional MOS transistor to a power supply voltage, thereby turning off MOS transistors at the same timing. Consequently, through current in a semiconductor output circuit can be suppressed and an output signal has no ringing.

    Abstract translation: 在其控制电极处接收与施加到MOS晶体管的控制电极的信号互补的信号的附加MOS晶体管设置在电源节点和由具有显着电阻的电阻器形成的控制电极线和互连MOS晶体管的各个控制电极 并联连接,每个连接在输出信号线和电源节点之间。 当MOS晶体管变为非导通时,附加MOS晶体管导通。 结果,内部节点由逆变器和附加MOS晶体管驱动到电源电压,从而在相同的定时关断MOS晶体管。 因此,可以抑制半导体输出电路中的电流,并且输出信号没有振​​铃。

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