公开(公告)号：US06893801B2

公开(公告)日：2005-05-17

申请号：US10753354

申请日：2004-01-09

申请人： Osamu Inoue ,  Norio Hasegawa ,  Shuji Ikeda

发明人： Osamu Inoue ,  Norio Hasegawa ,  Shuji Ikeda

IPC分类号： G03F1/36 ,  G03F1/68 ,  G03F7/20 ,  G03F7/22 ,  H01L21/027 ,  H01L21/28 ,  H01L21/768 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  G03C5/00

CPC分类号： G03F1/32 ,  G03F1/36 ,  G03F7/70125 ,  Y10S430/146

摘要： On the occasion of the aligning process to transfer a predetermined pattern to a semiconductor wafer by irradiating a photoresist on the semiconductor wafer with an aligning laser beam of the modified lighting via a photomask MK, the photomask MK allocating, to provide periodicity, the main apertures to transfer the predetermined pattern as the apertures formed by removing a part of the half-tone film on the mask substrate and the auxiliary apertures not resolved on the semiconductor wafer as the apertures formed by removing a part of the half-tone film is used to improve the resolution of the pattern.

摘要翻译： 在通过经由光掩模MK照射经修改的照明的定向激光束在半导体晶片上照射光致抗蚀剂以将预定图案转印到半导体晶片的对准处理的情况下，光掩模MK分配以提供周期性的主孔 通过去除掩模基板上的半色调膜的一部分而形成的孔，并且通过将半色调膜的一部分形成的孔用于 提高模式的分辨率。

公开(公告)号：US06686108B2

公开(公告)日：2004-02-03

申请号：US09964341

申请日：2001-09-28

申请人： Osamu Inoue ,  Norio Hasegawa ,  Shuji Ikeda

发明人： Osamu Inoue ,  Norio Hasegawa ,  Shuji Ikeda

IPC分类号： G03F900

CPC分类号： G03F1/32 ,  G03F1/36 ,  G03F7/70125 ,  Y10S430/146

摘要： On the occasion of the aligning process to transfer a predetermined pattern to a semiconductor wafer by irradiating a photoresist on the semiconductor wafer with an aligning laser beam of the modified lighting via a photomask MK, the photomask MK allocating, to provide periodicity, the main apertures to transfer the predetermined pattern as the apertures formed by removing a part of the half-tone film on the mask substrate and the auxiliary apertures not resolved on the semiconductor wafer as the apertures formed by removing a part of the half-tone film is used to improve the resolution of the pattern.

摘要翻译： 在通过经由光掩模MK照射经修改的照明的定向激光束在半导体晶片上照射光致抗蚀剂以将预定图案转印到半导体晶片的对准处理的情况下，光掩模MK分配以提供周期性的主孔 通过去除掩模基板上的半色调膜的一部分而形成的孔，并且通过将半色调膜的一部分形成的孔用于 提高模式的分辨率。

公开(公告)号：US09297649B2

公开(公告)日：2016-03-29

申请号：US14001433

申请日：2011-12-12

申请人： Hiroki Kawada ,  Norio Hasegawa ,  Toru Ikegami

发明人： Hiroki Kawada ,  Norio Hasegawa ,  Toru Ikegami

IPC分类号： G01B15/06 ,  G01N23/225 ,  H01J37/28 ,  H01J37/22 ,  G01N23/00 ,  H01J37/244

CPC分类号： G01B15/06 ,  G01N23/00 ,  H01J37/222 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/24578 ,  H01J2237/2816 ,  H01J2237/2817

摘要： The present invention aims to provide a pattern dimension measurement method for accurately measuring an amount of shrinkage of a pattern that shrinks and an original dimension value before the shrinkage and a charged particle beam apparatus.In order to attain the above-mentioned object, there are proposed a pattern dimension measurement method and a charged particle beam apparatus that are characterized by: forming a thin film on a sample including the pattern after carrying out beam scanning onto a first portion of the pattern; acquiring a first measurement value by scanning a beam onto a region corresponding to the first portion on which the thin film is formed; acquiring a second measurement value by scanning a beam onto a second portion that has identical dimensions as those of the first portion on design data; and finding the amount of shrinkage of the pattern based on subtraction processing of subtracting the first measurement value from the second measurement value.

摘要翻译： 本发明的目的在于提供一种图形尺寸测量方法，用于精确测量收缩的图案的收缩量和收缩前的原始尺寸值以及带电粒子束装置。 为了实现上述目的，提出了一种图案尺寸测量方法和带电粒子束装置，其特征在于：在对包含图案的样品进行束扫描之后，在包含该图案的样品上形成薄膜至第一部分 模式; 通过将光束扫描到与其上形成有薄膜的第一部分对应的区域来获取第一测量值; 通过将光束扫描到与设计数据上的第一部分具有相同尺寸的第二部分上来获取第二测量值; 并且基于从第二测量值减去第一测量值的减法处理来找出图案的收缩量。

公开(公告)号：US08671366B2

公开(公告)日：2014-03-11

申请号：US13390354

申请日：2010-07-15

申请人： Maki Tanaka ,  Norio Hasegawa ,  Chie Shishido ,  Mayuka Osaki

发明人： Maki Tanaka ,  Norio Hasegawa ,  Chie Shishido ,  Mayuka Osaki

IPC分类号： G06F17/50

CPC分类号： G01B15/04 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention aims at proposing a library creation method and a pattern shape estimation method in which it is possible, when estimating a shape based on comparison between an actual waveform and a library, to appropriately estimate the shape.As an illustrative embodiment to achieve the object, there are proposed a method of selecting a pattern by referring to a library, a method of creating a library by use of pattern cross-sectional shapes calculated through an exposure process simulation in advance, and a method for selecting a pattern shape stored in the library.

摘要翻译： 本发明旨在提出一种库创建方法和图案形状估计方法，其中当基于实际波形和库之间的比较来估计形状时，可以适当地估计形状。 作为实现该目的的说明性实施例，提出了通过参照库来选择图案的方法，通过使用预先通过曝光处理模拟计算的图案横截面形状来创建库的方法，以及方法 用于选择存储在库中的图案形状。

公开(公告)号：US20140048706A1

公开(公告)日：2014-02-20

申请号：US14001433

申请日：2011-12-12

申请人： Hiroki Kawada ,  Norio Hasegawa ,  Toru Ikegami

发明人： Hiroki Kawada ,  Norio Hasegawa ,  Toru Ikegami

IPC分类号： G01N23/00

CPC分类号： G01B15/06 ,  G01N23/00 ,  H01J37/222 ,  H01J37/244 ,  H01J37/28 ,  H01J2237/24578 ,  H01J2237/2816 ,  H01J2237/2817

摘要： The present invention aims to provide a pattern dimension measurement method for accurately measuring an amount of shrinkage of a pattern that shrinks and an original dimension value before the shrinkage and a charged particle beam apparatus.In order to attain the above-mentioned object, there are proposed a pattern dimension measurement method and a charged particle beam apparatus that are characterized by: forming a thin film on a sample including the pattern after carrying out beam scanning onto a first portion of the pattern; acquiring a first measurement value by scanning a beam onto a region corresponding to the first portion on which the thin film is formed; acquiring a second measurement value by scanning a beam onto a second portion that has identical dimensions as those of the first portion on design data; and finding the amount of shrinkage of the pattern based on subtraction processing of subtracting the first measurement value from the second measurement value.

摘要翻译： 本发明的目的在于提供一种图形尺寸测量方法，用于精确测量收缩的图案的收缩量和收缩前的原始尺寸值以及带电粒子束装置。 为了实现上述目的，提出了一种图案尺寸测量方法和带电粒子束装置，其特征在于：在对包含图案的样品进行束扫描之后，在包含该图案的样品上形成薄膜至第一部分 模式; 通过将光束扫描到与其上形成有薄膜的第一部分对应的区域来获取第一测量值; 通过将光束扫描到与设计数据上的第一部分具有相同尺寸的第二部分上来获取第二测量值; 并且基于从第二测量值减去第一测量值的减法处理来找出图案的收缩量。

公开(公告)号：US20130279793A1

公开(公告)日：2013-10-24

申请号：US13882141

申请日：2011-10-26

申请人： Yasutaka Toyoda ,  Norio Hasegawa ,  Ryoichi Matsuoka ,  Atsuko Yamaguchi

发明人： Yasutaka Toyoda ,  Norio Hasegawa ,  Ryoichi Matsuoka ,  Atsuko Yamaguchi

IPC分类号： G06T7/00

CPC分类号： G06T7/0004 ,  G06T7/001 ,  G06T2207/30141 ,  G06T2207/30152 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/24578 ,  H01J2237/24592 ,  H01J2237/2817 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to provide an image processing apparatus and a computer program which detects a defect such as a scum at high speed and with high precision. In order to accomplish the above-described object, the present invention proposes an image processing apparatus and a computer program which acquires image data, and detects edge branch points from this image data. Here, at each of the edge branch points, an edge associated therewith branches off in at least three or more directions. According to this configuration, it becomes possible to detect a defect such as a scum without utilizing the reference-pattern image. As a consequence, it becomes possible to detect the scum at high speed and with high precision.

摘要翻译： 本发明的目的是提供一种图像处理装置和计算机程序，其以高速和高精度检测浮渣等缺陷。 为了实现上述目的，本发明提出一种图像处理装置和计算机程序，其获取图像数据，并从该图像数据检测边缘分支点。 这里，在每个边缘分支点处，与其相关联的边缘在至少三个或更多个方向上分支。 根据该结构，能够在不利用基准图案图像的情况下检测浮渣等缺陷。 因此，可以高速，高精度地检测浮渣。

公开(公告)号：US08085870B2

公开(公告)日：2011-12-27

申请号：US12309140

申请日：2007-03-20

申请人： Takashi Okada ,  Jun Watanabe ,  Takahiro Todate ,  Norio Hasegawa

发明人： Takashi Okada ,  Jun Watanabe ,  Takahiro Todate ,  Norio Hasegawa

IPC分类号： H04L25/49

CPC分类号： H04B1/707 ,  H04B2201/70706

摘要： A transmitter suppresses peak power occurring in a transmission signal. The transmitter generates peak suppression signals for suppressing the peak power in the transmission signal respectively, synthesizes the peak suppression signals generated, and subtracts a signal as a synthesis result from the transmission signal.

摘要翻译： 发射机抑制发射信号中发生的峰值功率。 发射机分别产生用于抑制发送信号中的峰值功率的峰值抑制信号，合成产生的峰值抑制信号，并从发送信号中减去作为合成结果的信号。

公开(公告)号：US07974581B2

公开(公告)日：2011-07-05

申请号：US12068926

申请日：2008-02-13

申请人： Takashi Okada ,  Jun Watanabe ,  Takahiro Todate ,  Norio Hasegawa

发明人： Takashi Okada ,  Jun Watanabe ,  Takahiro Todate ,  Norio Hasegawa

IPC分类号： H04B1/68

CPC分类号： H04B1/707 ,  H04B2201/70706 ,  H04L27/2624

摘要： A transmitter suppresses a peak level of a multi-carrier signal produced by synthesizing a plurality of carrier signals. Specifically, a peak level suppression signal for a multi-carrier signal is generated. The generated peak level suppression signal is adjusted in accordance with the levels of respective carriers constituting the multi-carrier signal. And, the adjusted peak level suppression signal for each carrier is subtracted from an input signal, thereby generating a multi-carrier signal whose peak level is suppressed.

摘要翻译： 发射机抑制通过合成多个载波信号而产生的多载波信号的峰值电平。 具体地，产生用于多载波信号的峰值电平抑制信号。 所生成的峰值电平抑制信号根据构成多载波信号的各个载波的电平进行调整。 并且，从输入信号中减去每个载波的调整峰值电平抑制信号，从而产生其峰值电平被抑制的多载波信号。

公开(公告)号：US20110155904A1

公开(公告)日：2011-06-30

申请号：US12648766

申请日：2009-12-29

申请人： Shoji HOTTA ,  Norio Hasegawa

发明人： Shoji HOTTA ,  Norio Hasegawa

IPC分类号： G01N23/00 ,  G01B15/00

CPC分类号： G03F7/70466 ,  G03F7/70633 ,  G06T7/60 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J2237/2817 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： Systems and methods using imaged device patterns to measure overlay between different layers in a semiconductor manufacturing process, such as a double-patterning process. Images of pattern features are acquired by scanning electron microscopy. The position of a patterning layer is determined using positions of pattern features for the patterning layer in the images. A relative position of each patterning layer with respect to other pattern features or patterning layers is determined in vector form based on the determined pattern positions. Overlay error is determined based on a comparison of the relative position with reference values from design or simulation. Overlay can be measured with high precision and accuracy by utilizing pattern symmetry.

摘要翻译： 使用成像装置图案的系统和方法来测量半导体制造工艺中的不同层之间的覆盖层，例如双重图案化工艺。 通过扫描电子显微镜获得图案特征的图像。 使用图像中的图案化层的图案特征的位置来确定图案化层的位置。 基于所确定的图案位置，以向量形式确定每个图案形成层相对于其它图案特征或图案化层的相对位置。 叠加误差是根据相对位置与设计或模拟参考值的比较来确定的。 可以通过利用图案对称性以高精度和精度测量覆盖层。

公开(公告)号：US20080057408A9

公开(公告)日：2008-03-06

申请号：US11080511

申请日：2005-03-16

申请人： Norio Hasegawa ,  Fumio Murai ,  Katsuya Hayano

发明人： Norio Hasegawa ,  Fumio Murai ,  Katsuya Hayano

IPC分类号： G03F9/00 ,  G03C5/00

CPC分类号： G03F1/32 ,  G03F1/26 ,  G03F1/29 ,  G03F7/2022 ,  G03F7/70066

摘要： A semitransparent phase shifting mask has, in the periphery of a pattern element area, a light shielding portion which is formed by a semitransparent phase shifting portion and a transparent portion with the optimal size combination. A pattern is formed employing the semitransparent phase shifting mask.

摘要翻译： 半透射相移掩模在图形元件区域的外围具有由半透射相移部分和具有最佳尺寸组合的透明部分形成的遮光部分。 使用半透明相移掩模形成图案。