Abstract:
Certain aspects of the present disclosure provide a semiconductor variable capacitor. The semiconductor variable capacitor generally includes a semiconductor region, an insulative layer disposed above the semiconductor region, and a first non-insulative region disposed above the insulative layer. In certain aspects, a second non-insulative region is disposed adjacent to the semiconductor region, and a control region is disposed adjacent to the semiconductor region such that a capacitance between the first non-insulative region and the second non-insulative region is configured to be adjusted by varying a control voltage applied to the control region. In certain aspects, the first non-insulative region is disposed above a first portion of the semiconductor region and a second portion of the semiconductor region, and the first portion and the second portion of the semiconductor region are disposed adjacent to a first side and a second side, respectively, of the control region or the second non-insulative region.
Abstract:
Certain aspects of the present disclosure provide a semiconductor variable capacitor. The semiconductor variable capacitor generally includes a first non-insulative region disposed above a semiconductor region, and a second non-insulative region disposed adjacent to the semiconductor region. In certain aspects, the semiconductor variable capacitor also includes a first silicide layer disposed above the second non-insulative region, wherein the first silicide layer overlaps at least a portion of the semiconductor region. In certain aspects, a control region may be disposed adjacent to the semiconductor region such that a capacitance between the first non-insulative region and the second non-insulative region is configured to be adjusted by varying a control voltage applied to the control region.
Abstract:
Certain aspects of the present disclosure provide a semiconductor variable capacitor. The semiconductor variable capacitor generally includes a first non-insulative region disposed above a semiconductor region, and a second non-insulative region disposed adjacent to the semiconductor region. In certain aspects, the semiconductor variable capacitor also includes a first silicide layer disposed above the second non-insulative region, wherein the first silicide layer overlaps at least a portion of the semiconductor region. In certain aspects, a control region may be disposed adjacent to the semiconductor region such that a capacitance between the first non-insulative region and the second non-insulative region is configured to be adjusted by varying a control voltage applied to the control region.
Abstract:
An apparatus for wirelessly receiving power via a wireless field generated by a transmitter includes a resonator configured to generate electrical current to power or charge a load based on a voltage induced in the resonator in response to the wireless field, a first variable capacitor electrically coupled to the resonator and configured to adjust a first capacitance of the first variable capacitor responsive to a first control signal, a second variable capacitor electrically coupled to the resonator and configured to adjust a second capacitance of the second variable capacitor responsive to a second control signal, and a control circuit configured to adjust and apply the first control signal and the second control signal to the first variable capacitor and the second variable capacitor, respectively, to adjust a resonant frequency of the resonator and a voltage output to the load based on an electrical characteristic indicative of a level of power output to the load.
Abstract:
Exemplary embodiments are directed to detection and validation of wirelessly chargeable devices positioned within a charging region of a wireless power transmitter. A device may include a detection circuit comprising an oscillator, the detection circuit configured to detect a change in a frequency of the oscillator. The device may also include a wireless power transmitter configured to determine whether a chargeable device is positioned within a charging region of the transmitter upon the detection circuit detecting the change in the frequency of the oscillator, wherein the transmitter further configured to be selectively electrically isolated from the detection circuit.
Abstract:
A method and system for providing wireless power transfer through a metal object is provided. In one aspect, an apparatus for wirelessly receiving power via a magnetic field is provided. The apparatus includes a metal cover including an inner portion and an outer portion. The outer portion is configured to form a loop around the inner portion of the metal cover. The outer portion is configured to inductively couple power via the magnetic field. The apparatus includes a receive circuit electrically coupled to the outer portion and configured to receive a current from the outer portion generated in response to the magnetic field. The receive circuit is configured to charge or power a load based on the current.
Abstract:
Systems and methods for converting voltages between different voltage levels in a receiver are disclosed. In an aspect, a wireless power receiver apparatus for charging a chargeable device is provided. The apparatus includes a plurality of receive antennas disposed on a cover of the chargeable device, wherein at least one of the plurality of receive antennas is configured to wirelessly receive power according to a wireless charging protocol different from at least one other of the plurality of receive antennas. The apparatus includes a switching circuit disposed on the cover and configured to receive the wireless power from at least one of the plurality of receive antennas and selectively provide a respective voltage from a corresponding one of the plurality of receive antennas across an output configured to be connected to an input of the chargeable device.