公开(公告)号：US20140353582A1

公开(公告)日：2014-12-04

申请号：US14464179

申请日：2014-08-20

Applicant: Seoul Viosys Co., Ltd. ,  Mitsubishi Chemical Corporation

Inventor： Chang Yeon KIM ,  Dae Sung CHO ,  Ki Bum NAM ,  Young Wug KIM ,  Jong Kyun YOU ,  Kenji SHIMOYAMA ,  Takahide JOICHI ,  Kaori KURIHARA

IPC: H01L33/00 ,  H01L33/60 ,  H01L33/32 ,  H01L33/06 ,  H01L33/22

CPC classification number: H01L33/20 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/387 ,  H01L33/44

Abstract: Disclosed herein are a high efficiency light emitting diode and a method of fabricating the same. The light emitting diode includes a semiconductor stacked structure disposed on the support substrate and including a gallium nitride-based p-type semiconductor layer, a gallium nitride-based active layer, and a gallium nitride-based n-type semiconductor layer; and a reflecting layer disposed between the support substrate and the semiconductor stacked structure, wherein the semiconductor stacked structure includes a plurality of protrusions having a truncated cone shape and fine cones formed on top surfaces of the protrusions. By this configuration, light extraction efficiency of the semiconductor stacked structure having low dislocation density can be improved.

Abstract translation: 本文公开了一种高效率发光二极管及其制造方法。 发光二极管包括设置在支撑基板上并包括氮化镓基p型半导体层，氮化镓基有源层和氮化镓基n型半导体层的半导体堆叠结构; 以及设置在所述支撑基板和所述半导体堆叠结构之间的反射层，其中所述半导体堆叠结构包括形成在所述突起的顶表面上的具有截头圆锥形状的多个突起和细锥。 通过这种构造，可以提高具有低位错密度的半导体层叠结构的光提取效率。

公开(公告)号：US20140147946A1

公开(公告)日：2014-05-29

申请号：US14083856

申请日：2013-11-19

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Chang Yeon KIM

IPC: H01L33/02

CPC classification number: H01L33/0079

Abstract: Provided is a method of fabricating a vertical light emitting diode (LED). Initially, a semiconductor structure layer including an active layer is formed on a front surface of a growth substrate. A conductive support substrate is formed on the semiconductor structure layer. A rear surface of the growth substrate is abraded to reduce the thickness of the growth substrate. The rear surface of the growth substrate whose thickness is reduced due to the abrasion is dry etched to remove the growth substrate.

Abstract translation: 提供一种制造垂直发光二极管（LED）的方法。 首先，在生长衬底的前表面上形成包括有源层的半导体结构层。 在半导体结构层上形成导电支撑基板。 研磨生长衬底的后表面以减小生长衬底的厚度。 干燥蚀刻由于磨损而使厚度减小的生长衬底的后表面以除去生长衬底。