公开(公告)号：US20090142887A1

公开(公告)日：2009-06-04

申请号：US12153651

申请日：2008-05-22

Applicant: Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

Inventor： Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

IPC: H01L21/84

CPC classification number: H01L29/7869 ,  H01L29/66969

Abstract: Methods of manufacturing an oxide semiconductor thin film transistor are provided. The methods include forming a gate on a substrate, and a gate insulating layer on the substrate to cover the gate. A channel layer, which is formed of an oxide semiconductor, may be formed on the gate insulating layer. Source and drain electrodes may be formed on opposing sides of the channel layer. The method includes forming supplying oxygen to the channel layer, forming a passivation layer to cover the source and drain electrodes and the channel layer, and performing an annealing process after forming the passivation layer.

Abstract translation: 提供了制造氧化物半导体薄膜晶体管的方法。 所述方法包括在衬底上形成栅极，以及在衬底上形成栅极绝缘层以覆盖栅极。 可以在栅极绝缘层上形成由氧化物半导体形成的沟道层。 源极和漏极可以形成在沟道层的相对侧上。 所述方法包括：向所述沟道层形成供氧，形成钝化层以覆盖所述源漏电极和所述沟道层，以及在形成所述钝化层之后进行退火处理。

公开(公告)号：US20090140243A1

公开(公告)日：2009-06-04

申请号：US12219661

申请日：2008-07-25

Applicant: Tae-sang Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Tae-sang Kim ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L29/22 ,  H01L21/34

CPC classification number: H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02631

Abstract: Oxide semiconductor thin film transistors (TFT) and methods of manufacturing the same are provided. The methods include forming a channel layer on a substrate, forming source and drain electrodes at opposing sides of the channel layer, and oxidizing a surface of the channel layer by placing an oxidizing material in contact with the surface of the channel layer, reducing carriers on the surface of the channel layer. Due to the oxidizing agent treatment of the surface of the channel layer, excessive carriers that are generated naturally, or during the manufacturing process, may be more effectively controlled.

Abstract translation: 提供氧化物半导体薄膜晶体管（TFT）及其制造方法。 所述方法包括在衬底上形成沟道层，在沟道层的相对侧形成源极和漏极，并且通过将氧化材料与沟道层的表面相接触来氧化沟道层的表面， 通道层的表面。 由于氧化剂处理通道层的表面，可以更有效地控制天然产生的过量载体或制造过程中产生的过量载体。

公开(公告)号：US20090127560A1

公开(公告)日：2009-05-21

申请号：US12219265

申请日：2008-07-18

Applicant: Kyung-bae Park ,  Seon-mi Yoon ,  Sang-yoon Lee ,  Jae-young Choi ,  Hyeon-jin Shin ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Kyung-bae Park ,  Seon-mi Yoon ,  Sang-yoon Lee ,  Jae-young Choi ,  Hyeon-jin Shin ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L29/786 ,  H01L21/20 ,  H01L21/336 ,  H01L29/04

CPC classification number: H01L21/02675 ,  H01L21/02532 ,  H01L29/66765 ,  Y10S977/762 ,  Y10S977/778

Abstract: Example embodiments relate to a poly-crystalline silicon (Si) thin film, a thin film transistor (TFT) formed from a poly-crystalline silicon (Si) thin film and methods of manufacturing the same. The method of manufacturing the poly-crystalline Si thin film includes forming an active layer formed of amorphous Si on a substrate, coating a gold nanorod on the active layer, and irradiating infrared rays onto the gold nanorod to crystallize the active layer.

Abstract translation: 示例性实施例涉及由多晶硅（Si）薄膜形成的多晶硅（Si）薄膜，薄膜晶体管（TFT）及其制造方法。 多晶Si薄膜的制造方法包括在基板上形成由非晶Si形成的有源层，在有源层上涂覆金纳米棒，并将红外线照射到金纳米棒上以结晶活性层。

公开(公告)号：US20080318368A1

公开(公告)日：2008-12-25

申请号：US12153674

申请日：2008-05-22

Applicant: Myung-kwan Ryu ,  Sang-yoon Lee ,  Je-hun Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Myung-kwan Ryu ,  Sang-yoon Lee ,  Je-hun Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L21/00

CPC classification number: H01L29/7869

Abstract: Provided is a method of manufacturing a ZnO-based thin film transistor (TFT). The method may include forming source and drain electrodes using one or two wet etchings. A tin (Sn) oxide, a fluoride, or a chloride having relatively stable bonding energy against plasma may be included in a channel layer. Because the source and drain electrodes are formed by wet etching, damage to the channel layer and an oxygen vacancy may be prevented or reduced. Because the material having higher bonding energy is distributed in the channel layer, damage to the channel layer occurring when a passivation layer is formed may be prevented or reduced.

Abstract translation: 提供了一种制造ZnO基薄膜晶体管（TFT）的方法。 该方法可以包括使用一个或两个湿蚀刻来形成源极和漏极。 对于等离子体具有相对稳定的结合能的锡（Sn）氧化物，氟化物或氯化物可以包括在通道层中。 因为源电极和漏电极是通过湿蚀刻形成的，所以可以防止或减少对沟道层的损伤和氧空位。 因为具有较高结合能的材料分布在沟道层中，所以可以防止或减少在形成钝化层时对沟道层的损坏。