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Patent Agency Ranking
61.发明授权公开(公告)号：US10345397B2
公开(公告)日：2019-07-09
申请号：US15169639
申请日：2016-05-31
Applicant: Texas Instruments Incorporated
Inventor： Erika Lynn Mazotti , Dok Won Lee , William David French , Byron J R Shulver , Thomas Dyer Bonifield , Ricky Alan Jackson , Neil Gibson
Abstract: An integrated fluxgate device has a magnetic core on a control circuit. The magnetic core has a volume and internal structure sufficient to have low magnetic noise and low non-linearity. A stress control structure is disposed proximate to the magnetic core. An excitation winding, a sense winding and a compensation winding are disposed around the magnetic core. An excitation circuit disposed in the control circuit is coupled to the excitation winding, configured to provide current at high frequency to the excitation winding sufficient to generate a saturating magnetic field in the magnetic core during each cycle at the high frequency. An isolation structure is disposed between the magnetic core and the windings, sufficient to enable operation of the excitation winding and the sense winding at the high frequency at low power.
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公开(公告)号：US10162016B2
公开(公告)日：2018-12-25
申请号：US15064579
申请日：2016-03-08
Applicant: Texas Instruments Incorporated
Inventor： Ann Margaret Gabrys , Dok Won Lee
Abstract: A microelectronic device, possibly a packaged microelectronic device, contains a magnetic sensor component and magnetizable structural features. Magnetic moments of the magnetizable structural features are aligned parallel to each other. The microelectronic device is formed by applying a magnetic field so as to align magnetic moments of the magnetizable structural features with the applied magnetic field. Application of the magnetic field is subsequently discontinued. The magnetic moments of the magnetizable structural features remain aligned parallel to each other after the applied magnetic field is discontinued.
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公开(公告)号：US20170271399A1
公开(公告)日：2017-09-21
申请号：US15070413
申请日：2016-03-15
Applicant: Texas Instruments Incorporated
Inventor： Dok Won Lee , William David French , Keith Ryan Green
CPC classification number: H01L27/22 , H01L43/04 , H01L43/065 , H01L43/14
Abstract: Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.
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64.发明申请公开(公告)号：US20170261564A1
公开(公告)日：2017-09-14
申请号：US15064579
申请日：2016-03-08
Applicant: Texas Instruments Incorporated
Inventor： Ann Margaret Gabrys , Dok Won Lee
CPC classification number: G01R33/0017 , G01R33/04 , G01R33/07 , G01R33/09
Abstract: A microelectronic device, possibly a packaged microelectronic device, contains a magnetic sensor component and magnetizable structural features. Magnetic moments of the magnetizable structural features are aligned parallel to each other. The microelectronic device is formed by applying a magnetic field so as to align magnetic moments of the magnetizable structural features with the applied magnetic field. Application of the magnetic field is subsequently discontinued. The magnetic moments of the magnetizable structural features remain aligned parallel to each other after the applied magnetic field is discontinued.
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公开(公告)号：US20160274197A1
公开(公告)日：2016-09-22
申请号：US15171615
申请日：2016-06-02
Applicant: Texas Instruments Incorporated
Inventor： Anuraag Mohan , Dok Won Lee , William French , Erika L. Mazotti
CPC classification number: G01R33/04 , G01R33/0052 , G01R33/09 , H01L29/26 , H01L43/00 , H01L43/02 , H01L43/10 , H01L43/12
Abstract: A method of fabricating fluxgate devices to measure the magnetic field in two orthogonal, in plane directions, by using a composite-anisotropic magnetic core structure.
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