公开(公告)号：US20070087509A1

公开(公告)日：2007-04-19

申请号：US11610932

申请日：2006-12-14

申请人： Shigenobu MAEDA ,  Shigeto Maegawa ,  Takuji Matsumoto

发明人： Shigenobu MAEDA ,  Shigeto Maegawa ,  Takuji Matsumoto

IPC分类号： H01L21/336 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L29/045 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/1087 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78615 ,  H01L29/78621 ,  H01L29/78654 ,  H01L29/78687 ,  H01L29/78696

摘要： There is provided a semiconductor device which is formed on a semiconductor substrate and allows effective use of the feature of the semiconductor substrate, and there is also provided a method of manufacturing the same. An N-channel MOS transistor including a P-type body layer (3a), and a P-type active layer (6) for body voltage application which is in contact with the P-type body layer (3a) are formed on an SOI substrate which is formed to align a crystal direction of a support substrate (1) with a crystal direction of an SOI layer (3). A path connecting the P-type body layer (3a) and the P-type active layer (6) for body voltage application is aligned parallel to the crystal direction of the SOI layer (3). Since hole mobility is higher in the crystal direction, parasitic resistance (Ra, Rb) can be reduced in the above path. This speeds up voltage transmission to the P-type body layer (3a) and improves voltage fixing capability in the P-type body layer (3a).

摘要翻译： 提供一种半导体器件，其形成在半导体衬底上并且有效地利用了半导体衬底的特征，并且还提供了一种制造该半导体衬底的方法。 包括P型体层（3a）和与P型体层（3a）接触的体电压施加用P型有源层（6）的N沟道MOS晶体管形成在 被形成为使支撑衬底（1）的<110>晶体方向与SOI层（3）的<100>晶体方向对准的SOI衬底。 连接P型体层（3a）和用于体电压施加的P型有源层（6）的路径平行于SOI层（3）的<100>晶体方向排列。 由于在<100>晶体方向的空穴迁移率较高，所以在上述路径中可以减小寄生电阻（Ra，Rb）。 这加快了对P型体层（3a）的电压传输，并提高了P型体层（3a）中的电压固定能力。

公开(公告)号：US20050145940A1

公开(公告)日：2005-07-07

申请号：US11061645

申请日：2005-02-22

申请人： Shigenobu Maeda ,  Shigeto Maegawa ,  Takuji Matsumoto

发明人： Shigenobu Maeda ,  Shigeto Maegawa ,  Takuji Matsumoto

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/336 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8244 ,  H01L21/84 ,  H01L27/06 ,  H01L27/08 ,  H01L27/088 ,  H01L27/11 ,  H01L27/12 ,  H01L29/04 ,  H01L29/78 ,  H01L29/786 ,  H01L27/01

CPC分类号： H01L29/045 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/1087 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78615 ,  H01L29/78621 ,  H01L29/78654 ,  H01L29/78687 ,  H01L29/78696

摘要： There is provided a semiconductor device which is formed on a semiconductor substrate and allows effective use of the feature of the semiconductor substrate, and there is also provided a method of manufacturing the same. An N-channel MOS transistor including a P-type body layer (3a), and a P-type active layer (6) for body voltage application which is in contact with the P-type body layer (3a) are formed on an SOI substrate which is formed to align a crystal direction of a support substrate (1) with a crystal direction of an SOI layer (3). A path connecting the P-type body layer (3a) and the P-type active layer (6) for body voltage application is aligned parallel to the crystal direction of the SOI layer (3). Since hole mobility is higher in the crystal direction, parasitic resistance (Ra, Rb) can be reduced in the above path. This speeds up voltage transmission to the P-type body layer (3a) and improves voltage fixing capability in the P-type body layer (3a).

摘要翻译： 提供一种半导体器件，其形成在半导体衬底上并且有效地利用了半导体衬底的特征，并且还提供了一种制造该半导体衬底的方法。 包括P型体层（3a）和与P型体层（3a）接触的体电压施加用P型有源层（6）的N沟道MOS晶体管形成在 被形成为使支撑衬底（1）的<110>晶体方向与SOI层（3）的<100>晶体方向对准的SOI衬底。 连接P型体层（3a）和用于体电压施加的P型有源层（6）的路径平行于SOI层（3）的<100>晶体方向排列。 由于在<100>晶体方向的空穴迁移率较高，所以在上述路径中可以减小寄生电阻（Ra，Rb）。 这加快了对P型体层（3a）的电压传输，并提高了P型体层（3a）中的电压固定能力。

公开(公告)号：US08486793B2

公开(公告)日：2013-07-16

申请号：US13238580

申请日：2011-09-21

申请人： Takuji Matsumoto

发明人： Takuji Matsumoto

IPC分类号： H01L21/336

CPC分类号： H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/088 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/41783 ,  H01L29/45 ,  H01L29/66431 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7835 ,  H01L29/7843

摘要： A semiconductor device including a gate electrode disposed on a semiconductor substrate and source/drain regions disposed at both sides of the gate electrode, the source/drain regions being formed by implanting impurities. The source/drain regions include an epitaxial layer formed by epitaxially growing a semiconductor material having a different lattice constant from that of the semiconductor substrate in a recessed position at a side of the gate electrode, and a diffusion layer disposed in a surface layer of the semiconductor substrate.

摘要翻译： 一种半导体器件，包括设置在半导体衬底上的栅电极和设置在栅电极两侧的源极/漏极区，源/漏区通过注入杂质形成。 源极/漏极区域包括通过在栅极侧的凹陷位置外延生长具有与半导体衬底的晶格常数不同的晶格常数的半导体材料形成的外延层，以及设置在栅电极的表面层中的扩散层 半导体衬底。

公开(公告)号：US08369736B2

公开(公告)日：2013-02-05

申请号：US12791374

申请日：2010-06-01

申请人： Yoshiyuki Takashima ,  Hideki Kuge ,  Takuji Matsumoto ,  Taiyou Uehara ,  Shingo Natsume ,  Youichi Seki

发明人： Yoshiyuki Takashima ,  Hideki Kuge ,  Takuji Matsumoto ,  Taiyou Uehara ,  Shingo Natsume ,  Youichi Seki

IPC分类号： G03G15/08

CPC分类号： G03G21/1676 ,  G03G15/0863 ,  G03G15/0865 ,  G03G15/0877 ,  G03G2221/163

摘要： A developing device includes: a developer holding member that faces an image carrier on which a latent image is formed and rotating while holding developer; a developing housing with a holding member mount that mounts developer holding member, and accommodates developer; a developer container connected to the developing housing and containing developer that flows into the developing housing; a partition member disposed in the developer container and partitioning an inner space of the developer container; and a loosening member having a loosening portion disposed in the developer container and extending along one side surface and another side surface of the partition member to partition the developer container, and a drawing portion that is connected to the loosening portion and extends from a port formed in the developer container to the outside of the developer container. When the drawing portion is drawn out, the loosening portion moves to loosen the developer.

摘要翻译： 显影装置包括：显影剂保持部件，其面对形成有潜像的图像载体，同时保持显影剂; 具有保持构件安装件的显影壳体，其安装显影剂保持构件，并容纳显影剂; 连接到显影壳体并且容纳流入显影室的显影剂的显影剂容器; 分隔构件，其设置在所述显影剂容器中并且分隔所述显影剂容器的内部空间; 以及松动部件，其具有设置在显影剂容器中的松动部分，并且沿分隔部件的一个侧表面和另一个侧表面延伸以分隔显影剂容器;以及拉伸部分，其连接到松动部分并从形成的端口延伸 在显影剂容器中到显影剂容器的外部。 当拉出部分时，松开部分移动以松开显影剂。

公开(公告)号：US08014705B2

公开(公告)日：2011-09-06

申请号：US12108555

申请日：2008-04-24

申请人： Takuji Matsumoto ,  Kiyoshi Sakoh ,  Toyohiko Awano

发明人： Takuji Matsumoto ,  Kiyoshi Sakoh ,  Toyohiko Awano

IPC分类号： G03G15/09

CPC分类号： G03G15/0921

摘要： A developing device includes: a developer supporter that includes: a magnet member that has a plurality of magnetic poles; and a cylinder member; and a thickness regulation member wherein, of the plurality of the magnetic poles, a magnetic pole, which is placed at a position nearest to the thickness regulation member downstream in a rotation direction of the cylinder member from the thickness regulation member, has a maximum position of a normal magnetic flux density distribution, and the maximum position is placed outside the area of angle α downstream in the rotation direction of the cylinder member from the thickness regulation member, and wherein the diameter of the cylinder member is D, the projection width is W in a case where the thickness regulation member is projected onto the surface of the cylinder member, and the angle α is 180×W/(D×π).

摘要翻译： 显影装置包括：显影剂支撑体，其包括：具有多个磁极的磁体构件; 和圆筒构件; 以及厚度调节构件，其中，所述多个磁极中的最靠近所述厚度调节构件的位置处的所述磁极沿着所述气缸构件的旋转方向从所述厚度调节构件向下游位置具有最大位置 正常磁通密度分布，并且最大位置被放置在从所述厚度调节构件在所述气缸构件的旋转方向下游的角度α的区域的外侧，并且所述气缸构件的直径为D，所述突出宽度为 在厚度调节构件投影到圆筒构件的表面上的情况下，角度α为180×W /（D×＆pgr））。

公开(公告)号：US07912409B2

公开(公告)日：2011-03-22

申请号：US12338170

申请日：2008-12-18

申请人： Yasufumi Kayahara ,  Takuji Matsumoto ,  Hiromitsu Koizumi ,  Chiharu Nakajima ,  Mutsumi Kikuchi ,  Toyohiko Awano ,  Shigeki Nishimura

发明人： Yasufumi Kayahara ,  Takuji Matsumoto ,  Hiromitsu Koizumi ,  Chiharu Nakajima ,  Mutsumi Kikuchi ,  Toyohiko Awano ,  Shigeki Nishimura

IPC分类号： G03G15/08

CPC分类号： G03G15/0879 ,  G03G15/0872 ,  G03G15/0877 ,  G03G2215/0135 ,  G03G2215/0827

摘要： The present invention provides an exchangeable toner cartridge which can be attached to or detached from an apparatus main body. The toner cartridge includes the toner transfer member which is provided along a longitudinal direction of the toner cartridge and which can rotate. At the first range of the upstream side in a toner transfer direction the toner transfer member is formed into a substantially spiral shape, and at the second range of the downstream side in the toner transfer direction on a side of a toner supply port, toner transfer member has a shape different from that of the first range.

摘要翻译： 本发明提供一种可以安装到设备主体上或从设备主体拆卸的可更换的调色剂盒。 调色剂盒包括沿调色剂盒的纵向方向设置并可旋转的调色剂传送构件。 在调色剂输送方向的上游侧的第一范围，调色剂转印部件形成为大致螺旋状，并且在调色剂输送方向上的墨粉输送方向的下游侧的第二范围，调色剂转印 成员具有与第一范围不同的形状。

公开(公告)号：US20070253743A1

公开(公告)日：2007-11-01

申请号：US11603836

申请日：2006-11-24

申请人： Yasufumi Kayahara ,  Takuji Matsumoto ,  Hiromitsu Koizumi ,  Chiharu Nakajima ,  Mutsumi Kikuchi ,  Toyohiko Awano ,  Shigeki Nishimura

发明人： Yasufumi Kayahara ,  Takuji Matsumoto ,  Hiromitsu Koizumi ,  Chiharu Nakajima ,  Mutsumi Kikuchi ,  Toyohiko Awano ,  Shigeki Nishimura

IPC分类号： G03G15/08

CPC分类号： G03G15/0879 ,  G03G15/0872 ,  G03G15/0877 ,  G03G2215/0135 ,  G03G2215/0827

摘要： The present invention provides an exchangeable toner cartridge which can be attached to or detached from an apparatus main body. The toner cartridge includes the toner transfer member which is provided along a longitudinal direction of the toner cartridge and which can rotate. At the first range of the upstream side in a toner transfer direction the toner transfer member is formed into a substantially spiral shape, and at the second range of the downstream side in the toner transfer direction on a side of a toner supply port, toner transfer member has a shape different from that of the first range.

摘要翻译： 本发明提供一种可以安装到设备主体上或从设备主体拆卸的可更换的调色剂盒。 调色剂盒包括沿调色剂盒的纵向方向设置并可旋转的调色剂传送构件。 在调色剂输送方向的上游侧的第一范围，调色剂转印部件形成为大致螺旋状，并且在调色剂输送方向上的墨粉输送方向的下游侧的第二范围，调色剂转印 成员具有与第一范围不同的形状。

公开(公告)号：US07155148B2

公开(公告)日：2006-12-26

申请号：US10872542

申请日：2004-06-22

申请人： Shigeki Nishimura ,  Hiromitsu Koizumi ,  Norio Irie ,  Masayuki Nishimura ,  Takuji Matsumoto ,  Naomasa Okimura

发明人： Shigeki Nishimura ,  Hiromitsu Koizumi ,  Norio Irie ,  Masayuki Nishimura ,  Takuji Matsumoto ,  Naomasa Okimura

IPC分类号： G03G15/08 ,  G03G21/18

CPC分类号： G03G21/12 ,  G03G2221/0005

摘要： An image forming apparatus for forming an image with a developing agent, includes: a collecting-developing-agent occurring part in which the collecting developing agent to be collected in the developing agent occurs; a collection container for accommodating the collecting developing agent; a transporting part provided so as to connect the collection container and the collecting-developing-agent occurring part and for collecting and transporting the collecting developing agent occurring in the collecting-developing-agent occurring part; and a replacement part removably mounted in an apparatus body, wherein the collection container is mounted to be integrated with the replacement part.

摘要翻译： 一种用显影剂形成图像的图像形成装置，包括：收集显影剂发生部，其中收集在显影剂中的收集显影剂发生; 用于容纳收集显影剂的收集容器; 输送部，其设置为连接收集容器和收集显影剂发生部分，并用于收集和运送在收集显影剂发生部分中出现的收集显影剂; 以及可拆卸地安装在装置主体中的替换部件，其中所述收集容器安装成与所述更换部件一体化。

公开(公告)号：US20050148089A1

公开(公告)日：2005-07-07

申请号：US10743741

申请日：2003-12-24

申请人： Masahiro Sekiguchi ,  Takuji Matsumoto ,  Hiroyuki Ebinuma

发明人： Masahiro Sekiguchi ,  Takuji Matsumoto ,  Hiroyuki Ebinuma

IPC分类号： G01N31/22

CPC分类号： G01N31/22 ,  Y10T436/18 ,  Y10T436/182

摘要： The present invention provides a method for quantitatively determining a reducing substance, which comprises reacting a reducing substance in a test specimen with iron (III) ions, reacting iron (II) ions formed by reduction of the iron (III) ions or residual iron (III) ions with a metal indicator which is capable of reacting specifically with the iron (II) ions or the residual iron (III) ions to undergo color development, and carrying out quantitative determination by measuring the degree of color development, wherein a chelating agent which is specific to copper ions is added to the test specimen before the reaction of the reducing substance with the iron (III) ions; and a reagent used for it.

摘要翻译： 本发明提供了一种定量测定还原物质的方法，该方法包括使试样中的还原物质与铁（III）离子反应，通过还原铁（III）离子或残余铁形成的铁（II） III）离子与能够与铁（II）离子或残留铁（III）离子特异性反应的金属指示剂进行显色，并通过测量显色程度进行定量测定，其中螯合剂 在还原物质与铁（III）离子反应之前，将铜离子特异性添加到试样中; 和用于它的试剂。

公开(公告)号：US06713804B2

公开(公告)日：2004-03-30

申请号：US10199173

申请日：2002-07-22

申请人： Yuuichi Hirano ,  Takuji Matsumoto ,  Yasuo Yamaguchi

发明人： Yuuichi Hirano ,  Takuji Matsumoto ,  Yasuo Yamaguchi

IPC分类号： H01L27108

CPC分类号： H01L29/78648 ,  H01L27/1203 ,  H01L29/78615 ,  Y10S257/901

摘要： A voltage applying section (32) is connected to a silicon substrate (1). Emission of radiation to a semiconductor device causes a large number of holes to accumulate within a BOX layer (2) in the vicinity of the interface with respect to a silicon layer (3). The amount of accumulation of holes increases with a lapse of time. A voltage applying section (32) applies a negative voltage which decreases with the lapse of time to the silicon substrate (1) in order to cancel out a positive electric field resulting from the accumulated holes. The voltage applying section (32) includes a time counter (30) for detecting the lapse of time and a voltage generating section (31) connected to the silicon substrate (1) for generating a negative voltage (V1) which decreases in proportion to the lapse of time based on the result of detection (time T) carried out by the time counter (30). Consequently, a semiconductor device capable of suppressing occurrence of total dose effects is obtained.

摘要翻译： 电压施加部分（32）连接到硅衬底（1）。 辐射到半导体器件的辐射导致大量孔相对于硅层（3）在界面附近的BOX层（2）内积累。 孔的积聚量随时间的推移而增加。 电压施加部分（32）将随着时间的流逝减小的负电压施加到硅衬底（1）上，以抵消由累积的孔产生的正电场。 电压施加部分（32）包括用于检测经过时间的时间计数器（30）和连接到硅衬底（1）的电压产生部分（31），用于产生与 基于由时间计数器（30）执行的检测结果（时间T）的时间逝去。 因此，获得能够抑制总剂量效应的发生的半导体装置。