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1.发明申请公开(公告)号：US20050148089A1
公开(公告)日：2005-07-07
申请号：US10743741
申请日：2003-12-24
IPC分类号： G01N31/22
CPC分类号： G01N31/22 , Y10T436/18 , Y10T436/182
摘要： The present invention provides a method for quantitatively determining a reducing substance, which comprises reacting a reducing substance in a test specimen with iron (III) ions, reacting iron (II) ions formed by reduction of the iron (III) ions or residual iron (III) ions with a metal indicator which is capable of reacting specifically with the iron (II) ions or the residual iron (III) ions to undergo color development, and carrying out quantitative determination by measuring the degree of color development, wherein a chelating agent which is specific to copper ions is added to the test specimen before the reaction of the reducing substance with the iron (III) ions; and a reagent used for it.
摘要翻译： 本发明提供了一种定量测定还原物质的方法，该方法包括使试样中的还原物质与铁（III）离子反应，通过还原铁（III）离子或残余铁形成的铁（II） III）离子与能够与铁（II）离子或残留铁（III）离子特异性反应的金属指示剂进行显色，并通过测量显色程度进行定量测定，其中螯合剂 在还原物质与铁（III）离子反应之前，将铜离子特异性添加到试样中; 和用于它的试剂。
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2.发明授权公开(公告)号：US07244620B2
公开(公告)日：2007-07-17
申请号：US10743741
申请日：2003-12-24
CPC分类号： G01N31/22 , Y10T436/18 , Y10T436/182
摘要： The present invention provides a method for quantitatively determining a reducing substance, which comprises reacting a reducing substance in a test specimen with iron (III) ions, reacting iron (II) ions formed by reduction of the iron (III) ions or residual iron (III) ions with a metal indicator which is capable of reacting specifically with the iron (II) ions or the residual iron (III) ions to undergo color development, and carrying out quantitative determination by measuring the degree of color development, wherein a chelating agent which is specific to copper ions is added to the test specimen before the reaction of the reducing substance with the iron (III) ions; and a reagent used for it.
摘要翻译： 本发明提供了一种定量测定还原物质的方法，该方法包括使试样中的还原物质与铁（III）离子反应，通过还原铁（III）离子或残余铁形成的铁（II） III）离子与能够与铁（II）离子或残留铁（III）离子特异性反应的金属指示剂进行显色，并通过测量显色程度进行定量测定，其中螯合剂 在还原物质与铁（III）离子反应之前，将铜离子特异性添加到试样中; 和用于它的试剂。
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3.发明授权Method for quantitatively determining homocysteine and a reagent for quantitative determination of homocysteine 有权用于定量测定同型半胱氨酸的方法和用于定量测定同型半胱氨酸的试剂公开(公告)号：US07198890B2
公开(公告)日：2007-04-03
申请号：US10755236
申请日：2004-01-13
CPC分类号： G01N33/6812 , G01N2333/90241
摘要： The present invention provides a method for quantitatively determining homocysteine in a biological specimen containing homocysteine and cysteine by use of an enzyme which is capable of forming hydrogen sulfide both from homocysteine and from cysteine, which comprises (a) reacting the biological specimen with cysteine dioxygenase in the absence of a reducing agent, (b) subsequently reacting the resultant specimen of (a) with a reducing agent and the enzyme which is capable of forming hydrogen sulfide both from homocysteine and from cysteine, and (c) measuring the concentration of the hydrogen sulfide thus obtained to determine the homocysteine concentration in the biological specimen; and a reagent for such a quantitative determination of homocysteine.
摘要翻译： 本发明提供了一种通过使用能够从高半胱氨酸和半胱氨酸形成硫化氢的酶来定量测定含有同型半胱氨酸和半胱氨酸的生物样品中的同型半胱氨酸的方法，其包括（a）使生物样品与半胱氨酸双加氧酶在 不存在还原剂，（b）随后使（a）的所得样品与还原剂和能够从高半胱氨酸和半胱氨酸形成硫化氢的酶反应，和（c）测量氢的浓度 硫化物，以确定生物样品中的同型半胱氨酸浓度; 和用于定量测定同型半胱氨酸的试剂。
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4.发明申请Method for quantitatively determining homocysteine and a reagent for quantitative determination of homocysteine 有权用于定量测定同型半胱氨酸的方法和用于定量测定同型半胱氨酸的试剂公开(公告)号：US20050153385A1
公开(公告)日：2005-07-14
申请号：US10755236
申请日：2004-01-13
CPC分类号： G01N33/6812 , G01N2333/90241
摘要： The present invention provides a method for quantitatively determining homocysteine in a biological specimen containing homocysteine and cysteine by use of an enzyme which is capable of forming hydrogen sulfide both from homocysteine and from cysteine, which comprises (a) reacting the biological specimen with cysteine dioxygenase in the absence of a reducing agent, (b) subsequently reacting the resultant specimen of (a) with a reducing agent and the enzyme which is capable of forming hydrogen sulfide both from homocysteine and from cysteine, and (c) measuring the concentration of the hydrogen sulfide thus obtained to determine the homocysteine concentration in the biological specimen; and a reagent for such a quantitative determination of homocysteine.
摘要翻译： 本发明提供了一种通过使用能够从高半胱氨酸和半胱氨酸形成硫化氢的酶来定量测定含有同型半胱氨酸和半胱氨酸的生物样品中的同型半胱氨酸的方法，其包括（a）使生物样品与半胱氨酸双加氧酶在 不存在还原剂，（b）随后使（a）的所得样品与还原剂和能够从高半胱氨酸和半胱氨酸形成硫化氢的酶反应，和（c）测量氢的浓度 硫化物，以确定生物样品中的同型半胱氨酸浓度; 和用于定量测定同型半胱氨酸的试剂。
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5.发明授权Method for manufacturing semiconductor device with semiconductor materials with different lattice constants 有权具有不同晶格常数的半导体材料的半导体器件的制造方法公开(公告)号：US08486793B2
公开(公告)日：2013-07-16
申请号：US13238580
申请日：2011-09-21
申请人： Takuji Matsumoto
发明人： Takuji Matsumoto
IPC分类号： H01L21/336
CPC分类号： H01L29/7848 , H01L21/823807 , H01L21/823814 , H01L27/088 , H01L29/0847 , H01L29/165 , H01L29/41783 , H01L29/45 , H01L29/66431 , H01L29/665 , H01L29/6656 , H01L29/66636 , H01L29/7834 , H01L29/7835 , H01L29/7843
摘要： A semiconductor device including a gate electrode disposed on a semiconductor substrate and source/drain regions disposed at both sides of the gate electrode, the source/drain regions being formed by implanting impurities. The source/drain regions include an epitaxial layer formed by epitaxially growing a semiconductor material having a different lattice constant from that of the semiconductor substrate in a recessed position at a side of the gate electrode, and a diffusion layer disposed in a surface layer of the semiconductor substrate.
摘要翻译： 一种半导体器件，包括设置在半导体衬底上的栅电极和设置在栅电极两侧的源极/漏极区，源/漏区通过注入杂质形成。 源极/漏极区域包括通过在栅极侧的凹陷位置外延生长具有与半导体衬底的晶格常数不同的晶格常数的半导体材料形成的外延层，以及设置在栅电极的表面层中的扩散层 半导体衬底。
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公开(公告)号：US08369736B2
公开(公告)日：2013-02-05
申请号：US12791374
申请日：2010-06-01
申请人： Yoshiyuki Takashima , Hideki Kuge , Takuji Matsumoto , Taiyou Uehara , Shingo Natsume , Youichi Seki
发明人： Yoshiyuki Takashima , Hideki Kuge , Takuji Matsumoto , Taiyou Uehara , Shingo Natsume , Youichi Seki
IPC分类号： G03G15/08
CPC分类号： G03G21/1676 , G03G15/0863 , G03G15/0865 , G03G15/0877 , G03G2221/163
摘要： A developing device includes: a developer holding member that faces an image carrier on which a latent image is formed and rotating while holding developer; a developing housing with a holding member mount that mounts developer holding member, and accommodates developer; a developer container connected to the developing housing and containing developer that flows into the developing housing; a partition member disposed in the developer container and partitioning an inner space of the developer container; and a loosening member having a loosening portion disposed in the developer container and extending along one side surface and another side surface of the partition member to partition the developer container, and a drawing portion that is connected to the loosening portion and extends from a port formed in the developer container to the outside of the developer container. When the drawing portion is drawn out, the loosening portion moves to loosen the developer.
摘要翻译： 显影装置包括：显影剂保持部件，其面对形成有潜像的图像载体，同时保持显影剂; 具有保持构件安装件的显影壳体，其安装显影剂保持构件，并容纳显影剂; 连接到显影壳体并且容纳流入显影室的显影剂的显影剂容器; 分隔构件，其设置在所述显影剂容器中并且分隔所述显影剂容器的内部空间; 以及松动部件，其具有设置在显影剂容器中的松动部分，并且沿分隔部件的一个侧表面和另一个侧表面延伸以分隔显影剂容器;以及拉伸部分，其连接到松动部分并从形成的端口延伸 在显影剂容器中到显影剂容器的外部。 当拉出部分时，松开部分移动以松开显影剂。
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7.发明授权公开(公告)号：US08014705B2
公开(公告)日：2011-09-06
申请号：US12108555
申请日：2008-04-24
申请人： Takuji Matsumoto , Kiyoshi Sakoh , Toyohiko Awano
发明人： Takuji Matsumoto , Kiyoshi Sakoh , Toyohiko Awano
IPC分类号： G03G15/09
CPC分类号： G03G15/0921
摘要： A developing device includes: a developer supporter that includes: a magnet member that has a plurality of magnetic poles; and a cylinder member; and a thickness regulation member wherein, of the plurality of the magnetic poles, a magnetic pole, which is placed at a position nearest to the thickness regulation member downstream in a rotation direction of the cylinder member from the thickness regulation member, has a maximum position of a normal magnetic flux density distribution, and the maximum position is placed outside the area of angle α downstream in the rotation direction of the cylinder member from the thickness regulation member, and wherein the diameter of the cylinder member is D, the projection width is W in a case where the thickness regulation member is projected onto the surface of the cylinder member, and the angle α is 180×W/(D×π).
摘要翻译： 显影装置包括：显影剂支撑体，其包括：具有多个磁极的磁体构件; 和圆筒构件; 以及厚度调节构件，其中，所述多个磁极中的最靠近所述厚度调节构件的位置处的所述磁极沿着所述气缸构件的旋转方向从所述厚度调节构件向下游位置具有最大位置 正常磁通密度分布，并且最大位置被放置在从所述厚度调节构件在所述气缸构件的旋转方向下游的角度α的区域的外侧，并且所述气缸构件的直径为D，所述突出宽度为 在厚度调节构件投影到圆筒构件的表面上的情况下，角度α为180×W /（D×＆pgr））。
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公开(公告)号：US07912409B2
公开(公告)日：2011-03-22
申请号：US12338170
申请日：2008-12-18
申请人： Yasufumi Kayahara , Takuji Matsumoto , Hiromitsu Koizumi , Chiharu Nakajima , Mutsumi Kikuchi , Toyohiko Awano , Shigeki Nishimura
发明人： Yasufumi Kayahara , Takuji Matsumoto , Hiromitsu Koizumi , Chiharu Nakajima , Mutsumi Kikuchi , Toyohiko Awano , Shigeki Nishimura
IPC分类号： G03G15/08
CPC分类号： G03G15/0879 , G03G15/0872 , G03G15/0877 , G03G2215/0135 , G03G2215/0827
摘要： The present invention provides an exchangeable toner cartridge which can be attached to or detached from an apparatus main body. The toner cartridge includes the toner transfer member which is provided along a longitudinal direction of the toner cartridge and which can rotate. At the first range of the upstream side in a toner transfer direction the toner transfer member is formed into a substantially spiral shape, and at the second range of the downstream side in the toner transfer direction on a side of a toner supply port, toner transfer member has a shape different from that of the first range.
摘要翻译： 本发明提供一种可以安装到设备主体上或从设备主体拆卸的可更换的调色剂盒。 调色剂盒包括沿调色剂盒的纵向方向设置并可旋转的调色剂传送构件。 在调色剂输送方向的上游侧的第一范围，调色剂转印部件形成为大致螺旋状，并且在调色剂输送方向上的墨粉输送方向的下游侧的第二范围，调色剂转印 成员具有与第一范围不同的形状。
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公开(公告)号：US07482658B2
公开(公告)日：2009-01-27
申请号：US11677951
申请日：2007-02-22
申请人： Yuuichi Hirano , Shigeto Maegawa , Toshiaki Iwamatsu , Takuji Matsumoto , Shigenobu Maeda , Yasuo Yamaguchi
发明人： Yuuichi Hirano , Shigeto Maegawa , Toshiaki Iwamatsu , Takuji Matsumoto , Shigenobu Maeda , Yasuo Yamaguchi
IPC分类号： H01L21/00
CPC分类号： H01L27/1203 , H01L21/84
摘要： An isolation insulating film (5) of partial-trench type is selectively formed in an upper surface of a silicon layer (4). A power supply line (21) is formed above the isolation insulating film (5). Below the power supply line (21), a complete isolation portion (23) reaching an upper surface of an insulating film (3) is formed in the isolation insulating film (5). In other words, a semiconductor device comprises a complete-isolation insulating film which is so formed as to extend from the upper surface of the silicon layer (4) and reach the upper surface of insulating film (3) below the power supply line (21). With this structure, it is possible to obtain the semiconductor device capable of suppressing variation in potential of a body region caused by variation in potential of the power supply line.
摘要翻译： 在硅层（4）的上表面中选择性地形成部分沟槽型隔离绝缘膜（5）。 电源线（21）形成在隔离绝缘膜（5）的上方。 在电源线（21）的下方，在隔离绝缘膜（5）上形成到达绝缘膜（3）的上表面的完全隔离部（23）。 换句话说，半导体器件包括完全隔离绝缘膜，其形成为从硅层（4）的上表面延伸并到达电源线（21）下方的绝缘膜（3）的上表面 ）。 利用这种结构，可以获得能够抑制由电源线的电位变化引起的体区的电位变化的半导体器件。
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10.发明授权Semiconductor device, method of manufacturing same and method of designing same 有权半导体装置及其制造方法及其设计方法公开(公告)号：US07303950B2
公开(公告)日：2007-12-04
申请号：US11034938
申请日：2005-01-14
申请人： Yasuo Yamaguchi , Shigeto Maegawa , Takashi Ipposhi , Toshiaki Iwamatsu , Shigenobu Maeda , Yuuichi Hirano , Takuji Matsumoto , Shoichi Miyamoto
发明人： Yasuo Yamaguchi , Shigeto Maegawa , Takashi Ipposhi , Toshiaki Iwamatsu , Shigenobu Maeda , Yuuichi Hirano , Takuji Matsumoto , Shoichi Miyamoto
IPC分类号： H01L21/8238
CPC分类号： H01L21/84 , H01L27/1203
摘要： A partial oxide film (31) with well regions formed therebeneath isolates transistor formation regions in an SOI layer (3) from each other. A p-type well region (11) is formed beneath part of the partial oxide film (31) which isolates NMOS transistors from each other, and an n-type well region (12) is formed beneath part of the partial oxide film (31) which isolates PMOS transistors from each other. The p-type well region (11) and the n-type well region (12) are formed in side-by-side relation beneath part of the partial oxide film (31) which provides isolation between the NMOS and PMOS transistors. A body region is in contact with the well region (11) adjacent thereto. An interconnect layer formed on an interlayer insulation film (4) is electrically connected to the body region through a body contact provided in the interlayer insulation film (4). A semiconductor device having an SOI structure reduces a floating-substrate effect.
摘要翻译： 在其之间形成的具有阱区的部分氧化物膜（31）将SOI层（3）中的晶体管形成区域彼此隔离。 在部分氧化膜（31）的下部形成p型阱区（11），其将NMOS晶体管彼此隔离，并且在部分氧化膜（31）的一部分下面形成n型阱区（12） ），其将PMOS晶体管彼此隔离。 p型阱区（11）和n型阱区（12）在部分氧化膜（31）的一部分下方并排地形成，其提供NMOS和PMOS晶体管之间的隔离。 身体区域与与其相邻的井区域（11）接触。 形成在层间绝缘膜（4）上的互连层通过设置在层间绝缘膜（4）中的主体接触部电连接到体区。 具有SOI结构的半导体器件减少浮置衬底效应。
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