公开(公告)号：US07176102B2

公开(公告)日：2007-02-13

申请号：US10948234

申请日：2004-09-24

申请人： Hiroji Aga ,  Naota Tate ,  Susumu Kuwabara ,  Kiyoshi Mitani

发明人： Hiroji Aga ,  Naota Tate ,  Susumu Kuwabara ,  Kiyoshi Mitani

IPC分类号： H01L21/76

CPC分类号： H01L21/76254 ,  Y10S438/977

摘要： A method for producing an SOI wafer by the hydrogen ion delamination method comprising at least a step of bonding a base wafer and a bond wafer having a micro bubble layer formed by gas ion implantation and a step of delaminating a wafer having an SOI layer at the micro bubble layer as a border, wherein, after the delamination step, the wafer having an SOI layer is subjected to a two-stage heat treatment in an atmosphere containing hydrogen or argon utilizing a rapid heating/rapid cooling apparatus (RTA) and a batch processing type furnace. Preferably, the heat treatment by the RTA apparatus is performed first. Surface roughness of an SOI layer surface delaminated by the hydrogen ion delamination method is improved over the range from short period to long period, and SOI wafers free from generation of pits due to COPs in SOI layers are efficiently produced with high throughput.

摘要翻译： 一种用于通过氢离子分层方法制造SOI晶片的方法，包括至少一个步骤，即接合基底晶片和具有通过气体离子注入形成的微气泡层的接合晶片，以及将具有SOI层的晶片分层的步骤 微气泡层作为边界，其中，在分层步骤之后，使用快速加热/快速冷却装置（RTA）和批料在含氢或氩的气氛中对具有SOI层的晶片进行两级热处理 加工型炉。 优选地，首先进行RTA装置的热处理。 通过氢离子分层方法剥离的SOI层表面的表面粗糙度在短时间段到长周期的范围内得到改善，并且以高生产率有效地制造了由于SOI层中的COP而不产生凹坑的SOI晶片。

公开(公告)号：US07091107B2

公开(公告)日：2006-08-15

申请号：US10782838

申请日：2004-02-23

申请人： Isao Yokokawa ,  Kiyoshi Mitani

发明人： Isao Yokokawa ,  Kiyoshi Mitani

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/00 ,  H01L21/76

CPC分类号： H01L21/76254

摘要： There is disclosed a method of producing an SOI wafer in which an SOI layer is formed on a buried oxide film by, at least implanting at least one kind of ion of hydrogen ion and a rare gas ion into the surface portion of a bond wafer to form an ion-implanted layer, bonding the bond wafer and a base wafer to each other through an oxide film, and delaminating the resultant bonded wafer at the ion-implanted layer, wherein assuming that X [nm] represents the thickness of the buried oxide film and Y [nm] represents the thickness of the SOI layer in the SOI wafer immediately after delaminating at the ion-implanted layer, when the thickness X of the buried oxide film is X≦100, in forming the ion-implanted layer, the ion implantation is carried out with the ion implantation conditions being set such that the sum X+Y of the thickness of the buried oxide film and the thickness of the SOI layer satisfies X+Y>1500−14X, after which the bonding process and the delaminating process are carried out and, thereafter, a thinning treatment of the SOI layer is carried out to make the SOI layer into a thin film having a predetermined thickness. Thereby, there can be provided a method of producing an SOI wafer capable of producing a high-quality SOI wafer at a high yield without generating any blister and any void.

摘要翻译： 公开了一种制造SOI晶片的方法，其中在掩埋氧化膜上形成SOI层，至少将至少一种氢离子和稀有气体离子的离子注入到接合晶片的表面部分到 形成离子注入层，通过氧化膜将接合晶片和基底晶片彼此接合，并且在离子注入层分层所得的键合晶片，其中假设X [nm]表示掩埋氧化物的厚度 膜，Y [nm]表示在离子注入层分层后立即SOI晶片中的SOI层的厚度，当形成离子注入层时，当掩埋氧化膜的厚度X为X <= 100时， 进行离子注入，其中离子注入条件被设置为使掩埋氧化物膜的厚度和SOI层的厚度的和X + Y满足X + Y> 1500-14X，之后，接合工艺和 分层过程进行a 然后，进行SOI层的薄化处理，以使SOI层成为具有预定厚度的薄膜。 因此，可以提供一种制造能够以高产率制造高品质SOI晶片的SOI晶片的方法，而不产生任何起泡和任何空隙。

公开(公告)号：US07084046B2

公开(公告)日：2006-08-01

申请号：US10495988

申请日：2002-10-31

申请人： Kiyoshi Mitani ,  Isao Yokokawa

发明人： Kiyoshi Mitani ,  Isao Yokokawa

IPC分类号： H01L21/30

CPC分类号： H01L21/76254

摘要： After completion of annealing for bonding of the base wafer 1 and bond wafer 2, the bond wafer 2 is thinned to a first thickness suitable for ion implantation, and boron is ion-implanted to thereby form a high-boron-concentration layer 10. A second thinning step based on selective etching is then carried out while using the high-boron-concentration layer 10 as an etch stop layer. This is successful in providing a method of fabricating an SOI wafer which is suppressed both in intra-wafer uniformity of the firm thickness and in inter-wafer uniformity of the film thickness even when a required level for the thickness of the SOI layer is extremely small.

摘要翻译： 在完成基底晶片1和接合晶片2的接合退火完成之后，将接合晶片2减薄至适于离子注入的第一厚度，并且离子注入硼，从而形成高硼浓度层10。 然后在使用高硼浓度层10作为蚀刻停止层的同时进行基于选择性蚀刻的第二稀化步骤。 这成功地提供了制造SOI晶片的方法，其即使当SOI层的厚度的所需水平非常小时也抑制了厚度的晶片内均匀性和膜厚度的晶片间均匀性 。

公开(公告)号：US07052974B2

公开(公告)日：2006-05-30

申请号：US10496379

申请日：2002-11-25

申请人： Kiyoshi Mitani ,  Kiyoshi Demizu ,  Isao Yokokawa ,  Tadahiro Ohmi ,  Shigetoshi Sugawa

发明人： Kiyoshi Mitani ,  Kiyoshi Demizu ,  Isao Yokokawa ,  Tadahiro Ohmi ,  Shigetoshi Sugawa

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/2007 ,  H01L21/76254 ,  H01L29/045

摘要： The present invention provides a bonded wafer, wherein at least a silicon single crystal layer is formed on a silicon single crystal wafer, the silicon single crystal layer has a crystal plane orientation of {110}, and the silicon single crystal wafer has a crystal plane orientation of {100}. The present invention also provides a method of producing a bonded wafer, wherein after at least a first silicon single crystal wafer having a crystal plane orientation of {110} and a second silicon single crystal wafer having a crystal plane orientation of {100} are bonded directly or bonded via an insulator film, the first silicon single crystal wafer is made into a thin film. Thereby, there can be provided a wafer possible to obtain a MIS device having good characteristics by utilizing a silicon single crystal wafer having the {110} plane.

摘要翻译： 本发明提供一种接合晶片，其中至少在单晶硅晶片上形成硅单晶层，所述硅单晶层的晶面取向为{110}，所述硅单晶晶片具有晶面 方向{100}。 本发明还提供一种制造接合晶片的方法，其中在至少具有{110}的晶面取向的第一硅单晶晶片和具有{100}晶面取向的第二硅单晶晶片之后， 通过绝缘膜直接或结合，将第一硅单晶晶片制成薄膜。 由此，通过利用具有{110}面的硅单晶晶片，可以提供可以获得具有良好特性的MIS器件的晶片。

公开(公告)号：US06959854B2

公开(公告)日：2005-11-01

申请号：US10311438

申请日：2002-04-09

申请人： Isao Yokokawa ,  Masatake Nakano ,  Kiyoshi Mitani

发明人： Isao Yokokawa ,  Masatake Nakano ,  Kiyoshi Mitani

IPC分类号： B08B3/04 ,  H01L21/02 ,  H01L21/304 ,  H01L21/762 ,  H01L27/12 ,  B23K28/00 ,  B23K1/20 ,  H01L21/30 ,  H01L21/46

CPC分类号： H01L21/76251 ,  H01L21/76254

摘要： There is provided a method for producing a bonded substrate comprising, at least, a process of joining two substrates and a process of subjecting the joined substrates to heat treatment to bond them firmly, wherein, at least, a process of cleaning for removing contaminants on the surface of the substrates is performed before joining the substrates, and then a process of drying the cleaned surface of the substrates is performed without using the water displacing method for the drying process, so that moisture is left on the substrates before joining to increase a joining strength after joining the substrates. Thereby, there can be provided a method for producing a bonded substrate wherein a joining strength of the joining interface of the substrates to be joined is improved, and thus the bonded substrate wherein there is no void failure and blister failure in the bonding interface of a bonded substrate after bonding heat treatment can be produced at high productivity and high yield.

摘要翻译： 提供了一种用于制造接合基材的方法，至少包括两个接合基板的接合方法以及对连接的基板进行热处理以使其牢固结合的方法，其中至少包括清除污染物的方法 在接合基板之前进行基板的表面，然后在不使用干燥工艺的排水方法的情况下进行基板的清洁表面的干燥处理，从而在接合之前在基板上留下水分以增加 接合基板后的接合强度。 因此，可以提供一种接合基板的制造方法，其中提高了待接合基板的接合界面的接合强度，因此提供了接合基板，其中在接合界面处没有空隙故障和起泡失效 可以以高生产率和高产率生产粘合热处理后的粘合基材。

公开(公告)号：US06884696B2

公开(公告)日：2005-04-26

申请号：US10380979

申请日：2002-07-09

申请人： Hiroji Aga ,  Shinichi Tomizawa ,  Kiyoshi Mitani

发明人： Hiroji Aga ,  Shinichi Tomizawa ,  Kiyoshi Mitani

IPC分类号： H01L21/30 ,  H01L21/46 ,  H01L21/762 ,  H01L21/8238 ,  H01L27/12

CPC分类号： H01L21/76254 ,  Y10S438/977

摘要： A method for producing a bonded wafer by the ion implantation delamination method includes at least a step of bonding a bond wafer having a micro bubble layer formed by gaseous ion implantation and a base wafer serving as a support substrate and a step of delaminating the bond wafer at the micro bubble layer as a border to form a thin film on the base wafer. After the delamination of the bond wafer, the bonded wafer is subjected to a heat treatment in an atmosphere of an inert gas, hydrogen or a mixed gas thereof, then the bonded wafer is subjected to thermal oxidation to form a thermal oxide film on the surface of the thin film, and then the thermal oxide film is removed to reduce thickness of the thin film.

摘要翻译： 通过离子注入分层方法制造接合晶片的方法至少包括将具有通过气体离子注入形成的微气泡层的接合晶片与作为支撑基板的基底晶片接合的步骤和将接合晶片分层的步骤 在微气泡层作为边界在基底晶片上形成薄膜。 在接合晶片分层后，在惰性气体，氢气或其混合气体的气氛中对接合的晶片进行热处理，然后将接合的晶片进行热氧化，以在表面上形成热氧化膜 的薄膜，然后去除热氧化膜以减小薄膜的厚度。

公开(公告)号：US06372609B1

公开(公告)日：2002-04-16

申请号：US09555687

申请日：2000-06-02

申请人： Hiroji Aga ,  Naoto Tate ,  Kiyoshi Mitani

发明人： Hiroji Aga ,  Naoto Tate ,  Kiyoshi Mitani

IPC分类号： H01L2130

CPC分类号： H01L21/76254

摘要： There is provided a method of fabricating an SOI wafer having high quality by hydrogen ion delamination method wherein a damage layer remaining on the surface of the SOI layer after delamination and surface roughness are removed maintaining thickness uniformity of the SOI layer. According to the present invention, there are provided a method of fabricating an SOI wafer by hydrogen ion delamination method wherein an oxide film is formed on an SOI layer by heat treatment in an oxidizing atmosphere after bonding heat treatment, then the oxide film is removed, and subsequently heat treatment in a reducing atmosphere is performed; a method of fabricating an SOI wafer by hydrogen ion delamination method wherein an oxide film is formed on an SOI layer by heat treatment in an oxidizing atmosphere after delaminating heat treatment, then the oxide film is removed, and subsequently heat treatment in a reducing atmosphere is performed; and an SOI wafer fabricated by the methods.

摘要翻译： 提供了一种通过氢离子分层方法制造具有高质量的SOI晶片的方法，其中去除了在分层之后残留在SOI层的表面上的损伤层和表面粗糙度，保持了SOI层的厚度均匀性。 根据本发明，提供了一种通过氢离子分层方法制造SOI晶片的方法，其中通过在结合热处理之后的氧化气氛中进行热处理在SOI层上形成氧化膜，然后除去氧化物膜， 然后进行还原气氛的热处理。 通过氢分离法制造SOI晶片的方法，其中通过在分解热处理之后在氧化气氛中进行热处理在SOI层上形成氧化膜，然后除去氧化物膜，然后在还原气氛中进行热处理 执行 以及通过该方法制造的SOI晶片。

公开(公告)号：US06312797B1

公开(公告)日：2001-11-06

申请号：US09350143

申请日：1999-07-09

申请人： Isao Yokokawa ,  Kiyoshi Mitani

发明人： Isao Yokokawa ,  Kiyoshi Mitani

IPC分类号： H01L2134

CPC分类号： H01L21/02052 ,  H01L21/2007 ,  H01L21/76254 ,  Y10S438/974 ,  Y10T428/265

摘要： The object of the invention is to provide a bonded wafer in which an inferior bonding state of the bonded wafer attained by a hydrogen ion delamination method is reduced, no separation or no void is found at the connecting interface under a superior production characteristic and in a low cost. In a method for manufacturing a bonded wafer by a hydrogen ion delamination method, carbon concentration at a close contacted surface where both wafers are closely contacted from each other is 3-1014 atoms/cm2 or less.

摘要翻译： 本发明的目的是提供一种接合晶片，其中通过氢离子分层方法获得的接合晶片的接合状态较差，在优异的生产特性下在连接界面处没有发现分离或没有空隙， 低成本。 在通过氢离子分层方法制造接合晶片的方法中，两个晶片彼此紧密接触的紧密接触表面的碳浓度为3-1014原子/ cm 2以下。

公开(公告)号：US06239004B1

公开(公告)日：2001-05-29

申请号：US09135976

申请日：1998-08-18

申请人： Hiroji Aga ,  Kiyoshi Mitani ,  Masatake Nakano

发明人： Hiroji Aga ,  Kiyoshi Mitani ,  Masatake Nakano

IPC分类号： H01L2130

CPC分类号： H01L21/76251 ,  H01L21/2007

摘要： In a method of fabricating a bonded wafer, an oxide film is first formed on the surface of at least one of two mirror-polished silicon wafers. The two silicon wafers are superposed such that the mirror-polished surfaces come into close contact with each other, and heat treatment is performed in order to join the wafers together firmly. Subsequently, the thickness of one of the wafers is reduced so as to yield a thin film, the surface of which is then polished and subjected to vapor-phase etching in order to make the thickness of the thin film uniform. Optionally, the vapor-phase-etched surface is then mirror-polished. The surface of the bonded wafer is oxidized, and the generated surface oxide film is then removed. In the method, the thickness of the oxide film formed on the surface of the bonded wafer is made not greater than 50 nm. The method reliably eliminates damage and crystal defects generated during etching in accordance with PACE method or subsequent mirror polishing, and thereby enables relatively simple and low cost manufacture of bonded wafers having a very thin SOI layer that has good thickness uniformity and excellent crystallinity.

摘要翻译： 在制造接合晶片的方法中，首先在两个镜面抛光硅晶片中的至少一个的表面上形成氧化膜。 将两个硅晶片叠置成使得镜面抛光表面彼此紧密接触，并且进行热处理以将晶片牢固地接合在一起。 随后，减少一个晶片的厚度，以产生薄膜，然后对其表面进行抛光并进行气相蚀刻，以使薄膜的厚度均匀。 任选地，将气相蚀刻表面进行镜面抛光。 接合晶片的表面被氧化，然后除去生成的表面氧化膜。 在该方法中，形成在接合晶片的表面上的氧化膜的厚度不大于50nm。 该方法可以根据PACE法或随后的镜面抛光可靠地消除蚀刻期间产生的损伤和晶体缺陷，从而能够制造具有良好厚度均匀性和优异结晶度的非常薄的SOI层的接合晶片的相对简单且低成本的制造。

公开(公告)号：USD414867S

公开(公告)日：1999-10-05

申请号：US91348

申请日：1998-07-28

申请人： Masahiko Moriwaki ,  Kiyoshi Mitani

设计人： Masahiko Moriwaki ,  Kiyoshi Mitani