摘要:
A light-emitting display device the same includes an insulating substrate having a thin film transistor formed thereon. The thin film transistor includes a source electrode and/or a drain electrode. A passivation layer is formed on the insulating substrate over at least a portion of the thin film transistor, and has a via hole formed therein, which electrically contacts either the source electrode or the drain electrode. A pixel electrode is formed in the via hole. A light-blocking layer is formed over an entire upper surface of the passivation layer except for an area corresponding to the pixel electrode. A planarization layer is formed on an upper surface of the light-blocking layer except for an area corresponding to the pixel electrode.
摘要:
An organic light emitting display includes a substrate having a pixel driving circuit region and an opening region. A thin film transistor having source/drain electrodes is positioned on the pixel driving circuit region of the substrate. A passivation insulating layer is positioned on the source/drain electrodes to have a via hole for exposing one of the source/drain electrodes. A pixel electrode is positioned on a bottom surface of the via hole and in contact with the exposed source/drain electrode, and extends onto the passivation insulating layer. A first photosensitive organic insulating layer is positioned within the via hole in which the pixel electrode is formed to fill the via hole and to expose a portion of the pixel electrode around the via hole. An organic emission layer is positioned on the exposed pixel electrode.
摘要:
A semiconductor memory device includes: a plurality of cell array blocks; a boosted voltage driving unit for selectively supplying a boosted voltage to the cell array blocks; and a controller controlling a driving operation of the boosted voltage driving unit in response to a cell array block select signal.
摘要:
A light source module of a display device comprises light-emitting blocks each of which comprises multiple sets of light sources, with different sets emitting different colors (e.g. red, green and blue). Each set is independently controllable according to one or more driving parameters. A local-dimming method comprises: (a) in each color-dimming period, driving each light-emitting block by the first color-dimming process; (b) in each compensating period, driving each light-emitting block by a full-color process which is independent of the image; (c) in each compensating period, sensing emitted light and determining the one or more driving parameters' reference driving values operable to generate a reference color; (d) in at least one of the color-dimming and compensating periods, driving each light-emitting block using the one or more driving -parameters' values which depend on the reference driving values; and (e) between a color-dimming period and an adjacent compensating period, gradually switching the light-source module between the first color-dimming process and the full-color process.
摘要:
A TFT having a dual buffer structure, a method of fabricating the same, and a flat panel display having the TFT, and a method of fabricating the same are provided. The TFT includes a first buffer layer formed of an amorphous silicon layer on a substrate, a second buffer layer formed on the first buffer layer. The TFT also includes a semiconductor layer formed on the second buffer layer and a gate electrode formed on the semiconductor layer. The dual buffer structure provides better barrier to impurities diffusing from the substrate, and also acts as a black matrix to reduce unwanted reflections and is a source of hydrogen to passivate other layers.
摘要:
An organic electroluminescent display and a method of manufacturing the same are provided. The organic electroluminescent display includes a substrate, at least a thin-film transistor, which is formed on the substrate, at least an insulation layer, which cover the thin-film transistor, first electrodes, which are formed in a predetermined pattern on a top surface of the insulation layer and to which a voltage is selectively applied through the thin-film transistor, bus electrodes, which are insulated from the first electrodes, a planarization layer, which is an insulation layer and has openings exposing the first electrodes and the bus electrodes, organic layers, which are formed on a top surface of the first electrodes, and second electrodes, which are formed on a top surface of the organic layer and a top surface of the planarization layer and are electrically connected to the bus electrodes.
摘要:
The present invention discloses a high-speed flat panel display with a long lifetime, wherein thin film transistors in a pixel array portion in which a plurality of pixels are arranged and a driving circuit portion for driving the pixels of the pixel array portion, have different resistance values than each other or have different geometric structures than each other. The flat panel display comprises a pixel array portion where a plurality of pixels are arranged, and a driving circuit portion for driving the pixels of the pixel array portion. The thin film transistors in the pixel array portion and the driving circuit portion have different resistance values in their gate regions or drain regions than each other, or have different geometric structures than each other. One of the thin film transistors in the pixel array portion and the thin film transistors in the driving circuit has zigzag shape in its gate region or drain region or has an offset region.
摘要:
The invention provides an active matrix organic light emitting display device and method of fabricating the same in which at least one of a data line and a power supply line of a unit pixel is designed to pass over at least one of a source region, a channel region, or a drain region in the corresponding semiconductor layer, except for in an area corresponding to a contact hole, so that an aperture ratio and a pixel size of the active matrix organic light emitting display device are enhanced. This arrangement of components creates areas of free space that may be used to accommodate additional thin film transistors and/or other circuit components that improve the screen resolution. This arrangement may also increase the aperture ratio and the size of the pixel of the active matrix organic light emitting display device without adding and modifying existing fabrication processes.
摘要:
The claimed invention is directed to a flat panel display having R, G, and B unit pixels. At least one of the R, G, and B unit pixels includes at least two or more transistors, each having source and drain regions. At least one drain region in the source/drain regions of at least one transistor in the transistors has a resistance value different from a resistance value of at least a drain region of the other transistor. The difference in resistance values may be accomplished by doping each drain region with a different concentration of dopant or by shaping each drain region differently.
摘要:
An internal voltage generator includes an output node, a bit line precharge voltage generating unit for generating a bit line precharge voltage, and a voltage drop block for dropping a voltage level of the bit line precharge voltage according to operating modes.