公开(公告)号：US20050263761A1

公开(公告)日：2005-12-01

申请号：US11124124

申请日：2005-05-09

申请人： Chang-Soo Kim ,  Tae-Wook Kang ,  Chang-Yong Jeong ,  Jae-Young Oh ,  Sang-Il Park ,  Seong-Moh Seo

发明人： Chang-Soo Kim ,  Tae-Wook Kang ,  Chang-Yong Jeong ,  Jae-Young Oh ,  Sang-Il Park ,  Seong-Moh Seo

IPC分类号： G02F1/1368 ,  G02F1/136 ,  G09F9/30 ,  H01L21/00 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L27/32 ,  H01L29/04 ,  H01L29/10 ,  H01L29/15 ,  H01L29/745 ,  H01L29/76 ,  H01L29/786 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L51/52

CPC分类号： H01L29/78603 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3262 ,  H01L51/5284

摘要： A TFT having a dual buffer structure, a method of fabricating the same, and a flat panel display having the TFT, and a method of fabricating the same are provided. The TFT includes a first buffer layer formed of an amorphous silicon layer on a substrate, a second buffer layer formed on the first buffer layer. The TFT also includes a semiconductor layer formed on the second buffer layer and a gate electrode formed on the semiconductor layer. The dual buffer structure provides better barrier to impurities diffusing from the substrate, and also acts as a black matrix to reduce unwanted reflections and is a source of hydrogen to passivate other layers.

摘要翻译： 提供具有双缓冲结构的TFT及其制造方法，以及具有该TFT的平板显示器及其制造方法。 TFT包括由衬底上的非晶硅层形成的第一缓冲层，形成在第一缓冲层上的第二缓冲层。 TFT还包括形成在第二缓冲层上的半导体层和形成在半导体层上的栅电极。 双缓冲结构为从衬底扩散的杂质提供更好的屏障，并且还用作黑色矩阵以减少不必要的反射，并且是氢源来钝化其它层。

公开(公告)号：US07554118B2

公开(公告)日：2009-06-30

申请号：US11124124

申请日：2005-05-09

申请人： Chang-Soo Kim ,  Tae-Wook Kang ,  Chang-Yong Jeong ,  Jae-Young Oh ,  Sang-Il Park ,  Seong-Moh Seo

发明人： Chang-Soo Kim ,  Tae-Wook Kang ,  Chang-Yong Jeong ,  Jae-Young Oh ,  Sang-Il Park ,  Seong-Moh Seo

IPC分类号： H01L29/04 ,  H01L21/00

CPC分类号： H01L29/78603 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3262 ,  H01L51/5284

摘要： A TFT having a dual buffer structure, a method of fabricating the same, and a flat panel display having the TFT, and a method of fabricating the same are provided. The TFT includes a first buffer layer formed of an amorphous silicon layer on a substrate, a second buffer layer formed on the first buffer layer. The TFT also includes a semiconductor layer formed on the second buffer layer and a gate electrode formed on the semiconductor layer. The dual buffer structure provides better barrier to impurities diffusing from the substrate, and also acts as a black matrix to reduce unwanted reflections and is a source of hydrogen to passivate other layers.

摘要翻译： 提供具有双缓冲结构的TFT及其制造方法，以及具有该TFT的平板显示器及其制造方法。 TFT包括由衬底上的非晶硅层形成的第一缓冲层，形成在第一缓冲层上的第二缓冲层。 TFT还包括形成在第二缓冲层上的半导体层和形成在半导体层上的栅电极。 双缓冲结构为从衬底扩散的杂质提供更好的屏障，并且还用作黑色矩阵以减少不必要的反射，并且是氢源来钝化其它层。

公开(公告)号：US08735187B2

公开(公告)日：2014-05-27

申请号：US13100771

申请日：2011-05-04

申请人： Jae-Kyun Lee ,  Jae-Young Oh

发明人： Jae-Kyun Lee ,  Jae-Young Oh

IPC分类号： H01L21/00

CPC分类号： H01L27/1255 ,  G02F1/133553 ,  G02F1/133555 ,  H01L27/12 ,  H01L27/1248

摘要： An array substrate for a liquid crystal display device includes a substrate, a gate line and a data line on the substrate and crossing each other to define a pixel region, a thin film transistor connected to the gate line and the data line, a first passivation layer on the thin film transistor and having a first unevenness structure at its top surface, an auxiliary unevenness layer on the first passivation layer and having a first roughness structure at its top surface, and a reflector on the auxiliary unevenness layer, the reflector having a second unevenness structure due to the first unevenness structure of the first passivation layer and a second roughness structure due to the first roughness structure of the auxiliary unevenness layer, the second roughness structure having smaller patterns than the second unevenness structure.

摘要翻译： 用于液晶显示装置的阵列基板包括基板，栅极线和数据线，并且彼此交叉以形成像素区域，连接到栅极线和数据线的薄膜晶体管，第一钝化层 并且在其顶表面具有第一不均匀结构，在第一钝化层上具有辅助凹凸层，并且在其顶表面具有第一粗糙结构，在辅助凹凸层上具有反射器，反射器具有 由于第一钝化层的第一不均匀结构引起的第二不均匀结构和由于辅助凹凸层的第一粗糙结构引起的第二粗糙结构，所述第二粗糙结构具有比第二凹凸结构更小的图案。

公开(公告)号：US08319903B2

公开(公告)日：2012-11-27

申请号：US12247779

申请日：2008-10-08

申请人： Jae-Young Oh ,  Joon-Youp Lee ,  Hyun-Cheol Jin ,  Min-Jic Lee

发明人： Jae-Young Oh ,  Joon-Youp Lee ,  Hyun-Cheol Jin ,  Min-Jic Lee

IPC分类号： G02F1/1343

CPC分类号： G02F1/134363 ,  G02F1/136213

摘要： An in-plane switching mode liquid crystal display according to an embodiment includes gate lines arranged in a first direction on an array substrate, data lines arranged in a second direction substantially perpendicular to the first direction, one or more storage electrodes provided on the array substrate, common electrodes extending across each pixel region, pixel electrodes arranged to be substantially parallel to the common electrodes, the common electrodes and the pixel electrodes being alternately arranged to generate an in-plane field in each pixel region, thin film transistors (TFTs) provided at intersection areas of the gate lines and the data lines, each TFT including a source electrode connected to the corresponding data line, a drain electrode connected to the corresponding pixel electrode and a gate electrode, and at least one common line located under the respective common electrode in the pixel region, the common line being substantially parallel to the data lines.

摘要翻译： 根据实施例的面内切换模式液晶显示器包括沿阵列基板上的第一方向布置的栅极线，沿与第一方向大致垂直的第二方向布置的数据线，设置在阵列基板上的一个或多个存储电极 ，跨越每个像素区域延伸的公共电极，布置成基本上平行于公共电极的像素电极，公共电极和像素电极交替布置以在每个像素区域中产生平面场，提供薄膜晶体管（TFT） 在栅极线和数据线的交叉区域中，每个TFT包括连接到相应的数据线的源电极，连接到相应的像素电极的漏电极和栅电极，以及位于相应公共端下方的至少一条公共线 电极在像素区域中，公共线基本上平行于数据线。

公开(公告)号：US07932972B2

公开(公告)日：2011-04-26

申请号：US11798298

申请日：2007-05-11

申请人： Jae-Young Oh

发明人： Jae-Young Oh

IPC分类号： G02F1/1335 ,  H01L21/00

CPC分类号： G02F1/133516 ,  B29D11/00634 ,  G02F1/133512 ,  G02F1/133514 ,  G02F2201/48

摘要： A method of fabricating a substrate for a liquid crystal display device includes: disposing a transparent substrate on a stage of a laser apparatus; irradiating a laser beam having a predetermined power onto the transparent substrate to form a light shielding region in the transparent substrate surrounding first to third light transmitting regions; and forming a color filter layer including red, green and blue sub-color filters respectively in the first to third light transmitting regions, wherein boundaries of the red, green and blue sub-color filters correspond to the light shielding region.

摘要翻译： 制造液晶显示装置用基板的方法包括：在激光装置的台上设置透明基板; 将具有预定功率的激光束照射到所述透明基板上，以在围绕第一至第三透光区域的所述透明基板中形成遮光区域; 以及分别在所述第一至第三透光区域中形成包括红，绿和蓝三色滤色器的滤色器层，其中所述红，绿和蓝色子滤色器的边界对应于所述遮光区域。

公开(公告)号：US07776635B2

公开(公告)日：2010-08-17

申请号：US11391512

申请日：2006-03-29

申请人： Ji-Young Ahn ,  Jae-Young Oh

发明人： Ji-Young Ahn ,  Jae-Young Oh

IPC分类号： H01L21/00

CPC分类号： G02F1/134363 ,  G02F1/13458 ,  H01L27/124

摘要： A fabricating method of an array substrate for an in-plane switching liquid crystal display device includes: forming a gate line and a common line on a substrate, the common line spaced apart from the gate line; forming a data line crossing the gate line to define a pixel region; forming a thin film transistor connected to the gate line and the data line; forming a pixel electrode and a common electrode in the pixel region, each of the pixel electrode and the common electrode including an opaque metal layer; and irradiating ultraviolet rays onto the opaque metal layer to form a metal oxide layer on the opaque metal layer.

摘要翻译： 一种用于面内切换液晶显示装置的阵列基板的制造方法，包括：在基板上形成栅极线和公共线，所述公共线与栅极线间隔开; 形成与所述栅极线交叉的数据线，以限定像素区域; 形成连接到栅极线和数据线的薄膜晶体管; 在所述像素区域中形成像素电极和公共电极，所述像素电极和所述公共电极中的每一个包括不透明金属层; 并在不透明金属层上照射紫外线，在不透明金属层上形成金属氧化物层。

公开(公告)号：US07525630B2

公开(公告)日：2009-04-28

申请号：US11256004

申请日：2005-10-24

申请人： Kyoung-Mook Lee ,  Nack-Bong Choi ,  Seung-Hee Nam ,  Jae-Young Oh

发明人： Kyoung-Mook Lee ,  Nack-Bong Choi ,  Seung-Hee Nam ,  Jae-Young Oh

IPC分类号： G02F1/1345 ,  G02F1/1343 ,  H01L29/04 ,  G09G3/36

CPC分类号： G02F1/13458 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/136295 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

摘要： A method for manufacturing an array substrate for a display device, includes forming a gate electrode, a gate line, and a gate pad on a substrate, disposing a first metal mask on the gate pad, forming a gate insulating layer, an amorphous silicon layer, a doped silicon layer, and a metal layer on the substrate, removing the first metal mask, patterning the metal layer, the doped silicon layer, and the amorphous silicon layer to form source and drain electrodes, a data line, a data pad, an ohmic contact layer, and an active layer, forming a pixel electrode, forming a gate pad terminal and a data pad terminal covering the gate pad and the data pad, respectively, disposing second and third metal masks on the gate pad and data pad terminals, respectively, forming a passivation layer on the substrate, and removing the second and the third masks.

摘要翻译： 一种制造用于显示装置的阵列基板的方法，包括在基板上形成栅极电极，栅极线和栅极焊盘，在栅极焊盘上设置第一金属掩模，形成栅极绝缘层，非晶硅层 ，掺杂硅层和金属层，去除第一金属掩模，图案化金属层，掺杂硅层和非晶硅层以形成源极和漏极，数据线，数据焊盘， 欧姆接触层和有源层，形成像素电极，分别形成覆盖栅极焊盘和数据焊盘的栅极焊盘端子和数据焊盘端子，在栅极焊盘和数据焊盘端子上设置第二和第三金属掩模 分别在衬底上形成钝化层，并去除第二和第三掩模。

公开(公告)号：US20060256251A1

公开(公告)日：2006-11-16

申请号：US11489552

申请日：2006-07-20

申请人： Jae-Young Oh ,  Seong-Hee Nam

发明人： Jae-Young Oh ,  Seong-Hee Nam

IPC分类号： G02F1/136

CPC分类号： G02F1/136286 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2202/104 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66757 ,  H01L29/78621

摘要： A method of fabricating a polysilicon LCD device includes forming an active layer on a substrate, forming a first insulating layer having a first thickness and a second insulating layer having a second thickness sequentially on the active layer, forming a photoresist on the second insulating layer, ashing the photoresist, etching first portions of the first thickness of the first insulating layer corresponding to the source and drain electrode regions and the reduced second thickness of the second insulating layer within the first regions to expose source and drain regions of the active layer corresponding to the source and drain electrode regions, and etching a second portion of the second thickness of the second insulating layer to expose a portion of the first insulating layer corresponding to a gate electrode region, forming a gate electrode, a source electrode, and a drain electrode simultaneously on the second insulating layer, forming a passivation layer on the gate electrode, the source electrode, and the drain electrode, and forming a pixel electrode on the passivation layer.

摘要翻译： 一种制造多晶硅LCD器件的方法包括在衬底上形成有源层，在有源层上依次形成具有第一厚度的第一绝缘层和具有第二厚度的第二绝缘层，在第二绝缘层上形成光致抗蚀剂， 灰化所述光致抗蚀剂，蚀刻所述第一绝缘层的第一厚度对应于所述源极和漏极电极区域的第一部分以及在所述第一区域内的所述第二绝缘层的减小的第二厚度，以暴露所述有源层的源极和漏极区域对应于 源极和漏极区域，并且蚀刻第二绝缘层的第二厚度的第二部分，以暴露与栅电极区对应的第一绝缘层的一部分，形成栅电极，源电极和漏电极 同时在第二绝缘层上，在栅电极t上形成钝化层 源电极和漏电极，并在钝化层上形成像素电极。

公开(公告)号：US06972820B2

公开(公告)日：2005-12-06

申请号：US10654488

申请日：2003-09-04

申请人： Kyoung-Mook Lee ,  Nack-Bong Choi ,  Seung-Hee Nam ,  Jae-Young Oh

发明人： Kyoung-Mook Lee ,  Nack-Bong Choi ,  Seung-Hee Nam ,  Jae-Young Oh

IPC分类号： G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L21/77 ,  H01L27/12 ,  G02F1/1345 ,  G02F1/13 ,  G09G3/36

CPC分类号： G02F1/13458 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/136295 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765

摘要： A method of manufacturing an array substrate for a liquid crystal display device which uses KAPTON tapes on the gate pad or data pad to expose the gate pad and the data pad after subsequent processing steps. The method can also adopt a double structure of a metal layer and a transparent conductive layer for a gate electrode and a gate pad. The method can also use a metal mask. A diffraction exposure technique can also be adopted to decrease manufacturing time and cost.

摘要翻译： 一种制造用于液晶显示装置的阵列基板的方法，其在栅极焊盘或数据焊盘上使用KAPTON带，以在后续处理步骤之后露出栅极焊盘和数据焊盘。 该方法还可以采用用于栅电极和栅极焊盘的金属层和透明导电层的双重结构。 该方法也可以使用金属掩模。 还可以采用衍射曝光技术来减少制造时间和成本。

公开(公告)号：US06326226B1

公开(公告)日：2001-12-04

申请号：US09115498

申请日：1998-07-14

申请人： Jin Jang ,  Soo-Young Yoon ,  Jae-Young Oh

发明人： Jin Jang ,  Soo-Young Yoon ,  Jae-Young Oh

IPC分类号： H01L2120

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022

摘要： A method of crystallizing an amorphous film includes the steps of forming an amorphous film capable of being crystallized on a substrate, the amorphous film being in contact with a metal layer; and crystallizing the amorphous film by forming an electric field in the amorphous film and the metal layer, while simultaneously subjecting the amorphous film and the metal layer to a thermal treatment, thereby crystallizing the amorphous film.

摘要翻译： 结晶非晶膜的方法包括以下步骤：形成能够在基板上结晶的非晶膜，所述非晶膜与金属层接触; 并且通过在非晶膜和金属层中形成电场而结晶非晶膜，同时对非晶膜和金属层进行热处理，从而使非晶膜结晶。