公开(公告)号：US20100329266A1

公开(公告)日：2010-12-30

申请号：US12747132

申请日：2008-05-21

申请人： Jun Song ,  Minghai Xu ,  Bin Zhuang ,  Peiqian Qiu ,  Jianjie You

发明人： Jun Song ,  Minghai Xu ,  Bin Zhuang ,  Peiqian Qiu ,  Jianjie You

IPC分类号： H04L12/28

CPC分类号： H04L45/00 ,  H04L45/302 ,  H04L45/38

摘要： The present invention discloses a system and a method for resource access control. In the system, a resource access control function entity comprises path selection function means, which is configured to set a QoS policy and select a path meeting the QoS requirement for a service flow based on set QoS policy. In the present invention, by adding the path selection function means and selecting the path using the path selection function means, the x-RACF has the QoS policy based function of path selection and resource control for the service flow accessing to an access network, and thus the QoS guarantee capability of the NGN service is strengthened.

摘要翻译： 本发明公开了一种用于资源访问控制的系统和方法。 在该系统中，资源访问控制功能实体包括路径选择功能装置，其被配置为基于设置的QoS策略来设置QoS策略并选择满足服务流的QoS要求的路径。 在本发明中，通过添加路径选择功能单元，并且使用路径选择功能单元来选择路径，x-RACF具有基于QoS策略的路径选择和资源控制功能，用于访问接入网络的业务流，以及 从而加强了NGN业务的QoS保证能力。

公开(公告)号：US20100287612A1

公开(公告)日：2010-11-11

申请号：US12863599

申请日：2008-06-06

申请人： Mo Sun ,  Jun Song

发明人： Mo Sun ,  Jun Song

IPC分类号： H04L9/00

CPC分类号： H04L47/782

摘要： The present invention discloses a method for resource and admission control, which relates to the communication field. The method of the present invention includes the following steps: during the process of the service authorization of resource and admission control in the PULL mode, the policy decision function entity (PD-FE) performs the QoS resource authorization for the service request, then informs the authorization information of the authorized service flow to the Policy Execute Function Entity (PE-FE); after the PE-FE receives the authorization information, the association relationship between the PD-FE and the authorization information of the authorized service flow is established; during the process of resource reservation of the authorized service flow initiated by the Customer Premises Equipment (CPE), the PE-FE selects the PD-FE according to the above mentioned corresponding relationship, and interacts with the PD-FE. The method of the present invention enables PE-FE or TRC-FE to select to implement the process of resource reservation request for the is PD-FE authorized by the service flow that initiates the resource reservation request, after receiving the resource reservation request of the service flow.

摘要翻译： 本发明公开了一种与通信领域相关的资源和准入控制方法。 本发明的方法包括以下步骤：在PULL模式下资源和准入控制的业务授权过程中，策略决策功能实体（PD-FE）对服务请求进行QoS资源授权，然后通知 授权服务流向策略执行功能实体（PE-FE）的授权信息; PE-FE收到授权信息后，建立PD-FE与授权业务流程授权信息的关联关系; 在由客户驻地设备（CPE）发起的授权业务流的资源预留过程中，PE-FE根据上述对应关系选择PD-FE，并与PD-FE进行交互。 本发明的方法使得PE-FE或TRC-FE能够选择实现资源预留请求的过程，即在接收资源预留请求的资源预留请求之后，由发起资源预留请求的业务流授权的PD-FE 服务流程。

公开(公告)号：US20080197297A1

公开(公告)日：2008-08-21

申请号：US11471434

申请日：2006-06-20

申请人： Robert P. Akins ,  Richard L. Sandstrom ,  William N. Partlo ,  Igor V. Fomenkov ,  Thomas D. Steiger ,  John Martin Algots ,  Norbert Bowering ,  Robert N. Jacques ,  Frederick Palenschat ,  Jun Song

发明人： Robert P. Akins ,  Richard L. Sandstrom ,  William N. Partlo ,  Igor V. Fomenkov ,  Thomas D. Steiger ,  John Martin Algots ,  Norbert Bowering ,  Robert N. Jacques ,  Frederick Palenschat ,  Jun Song

IPC分类号： G01J3/10

CPC分类号： B82Y10/00 ,  G03F7/70033 ,  H05G2/003 ,  H05G2/008

摘要： An EUV light source apparatus and method are disclosed, which may comprise a pulsed laser providing laser pulses at a selected pulse repetition rate focused at a desired target ignition site; a target formation system providing discrete targets at a selected interval coordinated with the laser pulse repetition rate; a target steering system intermediate the target formation system and the desired target ignition site; and a target tracking system providing information about the movement of target between the target formation system and the target steering system, enabling the target steering system to direct the target to the desired target ignition site. The target tracking system may provide information enabling the creation of a laser firing control signal, and may comprise a droplet detector comprising a collimated light source directed to intersect a point on a projected delivery path of the target, having a respective oppositely disposed light detector detecting the passage of the target through the respective point, or a detector comprising a linear array of a plurality of photo-sensitive elements aligned to a coordinate axis, the light from the light source intersecting a projected delivery path of the target, at least one of the which may comprise a plane-intercept detection device. The droplet detectors may comprise a plurality of droplet detectors each operating at a different light frequency, or a camera having a field of view and a two dimensional array of pixels imaging the field of view. The apparatus and method may comprise an electrostatic plasma containment apparatus providing an electric plasma confinement field at or near a target ignition site at the time of ignition, with the target tracking system providing a signal enabling control of the electrostatic plasma containment apparatus. The apparatus and method may comprise a vessel having and intermediate wall with a low pressure trap allowing passage of EUV light and maintaining a differential pressure across the low pressure trap. The apparatus and method may comprise a magnetic plasma confinement mechanism creating a magnetic field in the vicinity of the target ignition site to confine the plasma to the target ignition site, which may be pulsed and may be controlled using outputs from the target tracking system.

公开(公告)号：US20070177543A1

公开(公告)日：2007-08-02

申请号：US11627031

申请日：2007-01-25

申请人： Enyuan Qian ,  Huiyan Zhang ,  Lingfeng Lin ,  Jun Song ,  Yang Wu ,  Chunting Li ,  Yi Zhang ,  Ke Feng

发明人： Enyuan Qian ,  Huiyan Zhang ,  Lingfeng Lin ,  Jun Song ,  Yang Wu ,  Chunting Li ,  Yi Zhang ,  Ke Feng

IPC分类号： H04Q7/00

CPC分类号： H04W28/18 ,  H04W72/04 ,  H04W72/0453 ,  H04W88/08 ,  H04W88/12 ,  H04W92/12 ,  H04W92/22

摘要： The present invention relates to technique for optimized assignment of Abis transmission resources based on dynamic statistical time division multiplexing, the method comprising the steps of: assigning a set of 64 k TS's to GPRS/EGPRS services on an Abis link, the set of 64 k TS's shared among all BTS's connected to the Abis interface; a PCU assigning sufficient Abis transmission resources to a TRX based on the load thereof if the TRX has EGPRS services; a BSC interconnecting Abis transmission resources and BSC-PCU transmission resources and informing a BTS that said Abis transmission resources have been assigned to a TRE mapped to the TRX; the PCU reassigning bandwidth of the Abis transmission resources based on changes in the load of the TRX; in each TRX, all RTS's statistical-time-division-multiplexing all transmission resources of the TRX based on flow in different periods for different RTS's. The present invention will achieve dynamic sharing of Abis transmission resources on a RTS layer so as to optimize using of Abis transmission resources, reduce waste and decrease operating cost.

摘要翻译： 本发明涉及基于动态统计时分复用来优化Abis传输资源分配的技术，该方法包括以下步骤：在一个Abis链路上将一组64k TS分配给GPRS / EGPRS业务，该组64k TS在所有BTS与Abis接口之间共享; 如果TRX具有EGPRS服务，则PCU根据其负载向TRX分配足够的Abis传输资源; BSC互连Abis传输资源和BSC-PCU传输资源，并通知BTS所述Abis传输资源已被分配给映射到TRX的TRE; PCU根据TRX的负载变化重新分配Abis传输资源的带宽; 在每个TRX中，所有RTS的统计时分复用TRX的所有传输资源都是基于不同时段的不同RTS的流。 本发明将实现RTS层上Abis传输资源的动态共享，从而优化Abis传输资源的使用，减少浪费并降低运营成本。

公开(公告)号：US20070036049A1

公开(公告)日：2007-02-15

申请号：US11498132

申请日：2006-08-03

申请人： Gi Im ,  Jun Song ,  Deuk Lee ,  Joung Kim

发明人： Gi Im ,  Jun Song ,  Deuk Lee ,  Joung Kim

IPC分类号： G11B20/00

CPC分类号： H04N5/85 ,  G11B31/003 ,  G11B31/02 ,  H04N5/775 ,  H04N9/8042

摘要： A dual-deck optical disc system and a method of controlling the dual-deck optical disc system enable data to be simultaneously recorded and reproduced. The dual-deck optical disc system may include a plurality of decks operable to record data on and reproduce data from optical discs mounted in the plurality of decks; and a controller that controls the plurality of decks to record an external signal on a first optical disc of the optical discs while reproducing data from a second optical disc of the optical discs.

摘要翻译： 双层光盘系统和控制双层光盘系统的方法使数据能够被同时记录和再生。 双层光盘系统可以包括可操作以在安装在多个甲板中的光盘上记录数据并从其再现数据的多个甲板; 以及控制器，其在从所述光盘的第二光盘再现数据的同时，控制所述多个记录板在所述光盘的第一光盘上记录外部信号。

公开(公告)号：US06855609B2

公开(公告)日：2005-02-15

申请号：US10670918

申请日：2003-09-24

申请人： Jun Cai ,  Guang Ping Hua ,  Jun Song ,  Keng Foo Lo

发明人： Jun Cai ,  Guang Ping Hua ,  Jun Song ,  Keng Foo Lo

IPC分类号： H01L27/02 ,  H01L21/336

CPC分类号： H01L27/0266 ,  H01L2924/0002 ,  H01L2924/00

摘要： A transistor structure is manufactured for ESD protection in an integrated circuit device. A semiconductor substrate has source and drain diffusion regions and respective source and drain wells under the source and drain diffusion regions. A shallow trench isolation formed over the semiconductor substrate and into the semiconductor substrate separates the source and drain diffusion regions and a portion of the source and drain wells. Source and drain contact structures respectively formed on the shallow trench isolation over the source and drain diffusion regions and extend through the shallow trench isolation to contact the source and drain diffusion regions. An ion implantation is performed through the contact openings into the bottoms of the source and drain wells to control the device trigger voltage and position the discharge current far away from the surface, which increases the device ESD performance significantly.

摘要翻译： 在集成电路器件中制造用于ESD保护的晶体管结构。 半导体衬底具有源极和漏极扩散区域以及源极和漏极扩散区域下的源极和漏极阱。 形成在半导体衬底上并进入半导体衬底的浅沟槽隔离件分离源极和漏极扩散区域以及源极和漏极阱的一部分。 源极和漏极接触结构分别形成在源极和漏极扩散区上的浅沟槽隔离上，并延伸穿过浅沟槽隔离以接触源极和漏极扩散区域。 通过接触开口进入离子注入到源阱和漏极的底部，以控制器件触发电压并将放电电流定位远离表面，从而显着提高器件ESD性能。

公开(公告)号：US06764914B2

公开(公告)日：2004-07-20

申请号：US10290130

申请日：2002-11-07

申请人： Alex See ,  Cher Liang Randall Cha ,  Shyue Fong Quek ,  Ting Cheong Ang ,  Wye Boon Loh ,  Sang Yee Loong ,  Jun Song ,  Chua Chee Tee

发明人： Alex See ,  Cher Liang Randall Cha ,  Shyue Fong Quek ,  Ting Cheong Ang ,  Wye Boon Loh ,  Sang Yee Loong ,  Jun Song ,  Chua Chee Tee

IPC分类号： H01L2120

CPC分类号： H01L28/40 ,  H01L21/31683

摘要： A process for forming a high dielectric constant, (High K), layer, for a metal-oxide-metal, capacitor structure, featuring localized oxidation of an underlying metal layer, performed at a temperature higher than the temperature experienced by surrounding structures, has been developed. A first iteration of this process features the use of a laser ablation procedure, performed to a local region of an underlying metal layer, in an oxidizing ambient. The laser ablation procedure creates the desired, high temperature, only at the laser spot, allowing a high K layer to be created at this temperature, while the surrounding structures on a semiconductor substrate, not directly exposed to the laser ablation procedure remain at lower temperatures. A second iteration features the exposure of specific regions of an underlying metal layer, to a UV, or to an I line exposure procedure, performed in an oxidizing ambient, with the regions of an underlying metal layer exposed to the UV or I line procedure, via clear regions in an overlying photolithographic plate. This procedure also results in the formation of a high K layer, on a top portion of the underlying metal layer.

摘要翻译： 在高于周围结构所经历的温度的温度下进行的金属氧化物 - 金属电容器结构的高介电常数（高K）层，其特征在于底层金属层的局部氧化， 已经开发 该方法的第一次迭代的特征在于在氧化环境中使用对底层金属层的局部区域进行的激光烧蚀程序。 激光烧蚀过程仅在激光点产生所需的高温，允许在该温度下产生高K层，而不直接暴露于激光烧蚀过程的半导体衬底上的周围结构保持在较低温度 。 第二次迭代的特征在于在氧化环境中进行的底层金属层的特定区域到UV或I线曝光程序，暴露于UV或I线程序的下面的金属层的区域， 通过覆盖光刻板中的透明区域。 该过程还导致在下面的金属层的顶部上形成高K层。

公开(公告)号：US06399431B1

公开(公告)日：2002-06-04

申请号：US09531786

申请日：2000-03-21

申请人： Jun Song ,  Ting Cheong Ang ,  Shyue Fong Quek ,  Sang Yee Loong

发明人： Jun Song ,  Ting Cheong Ang ,  Shyue Fong Quek ,  Sang Yee Loong

IPC分类号： H01L2170

CPC分类号： H01L21/84 ,  H01L27/0266 ,  H01L27/1203 ,  H01L29/78603

摘要： A method for forming an electrostatic discharge device using silicon-on-insulator technology is described. A silicon-on-insulator substrate is provided comprising a semiconductor substrate underlying an oxide layer underlying a silicon layer. The silicon layer and oxide layer are patterned to form a gate electrode wherein the semiconductor substrate is exposed. Ions are implanted into the exposed semiconductor substrate to form source and drain regions adjacent to the gate electrode. Spacers are formed on sidewalls of the gate electrode. An interlevel dielectric layer is deposited overlying the gate electrode. Openings are formed through the interlevel dielectric layer to the source and drain regions and filled with a conducting layer. The conducting layer is patterned to form conducting lines to complete formation of an electrostatic discharge device using SOI technology in the fabrication of integrated circuits.

摘要翻译： 描述了使用绝缘体上硅技术形成静电放电装置的方法。 提供了一种绝缘体上硅衬底，其包括位于硅层下面的氧化物层下方的半导体衬底。 图案化硅层和氧化物层以形成其中暴露半导体衬底的栅电极。 将离子注入到暴露的半导体衬底中以形成与栅电极相邻的源区和漏区。 隔板形成在栅电极的侧壁上。 沉积在栅电极上的层间电介质层。 开口通过层间介电层形成到源区和漏区，并填充有导电层。 图案化导电层以形成导线，以在集成电路的制造中使用SOI技术完成静电放电装置的形成。

公开(公告)号：US06376379B1

公开(公告)日：2002-04-23

申请号：US09495344

申请日：2000-02-01

申请人： Shyue Fong Quek ,  Ting Cheong Ang ,  Jun Song ,  Sang Yee Loong

发明人： Shyue Fong Quek ,  Ting Cheong Ang ,  Jun Song ,  Sang Yee Loong

IPC分类号： H01L21302

CPC分类号： H01L21/31144 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/32139 ,  H01L21/76801 ,  H01L21/76807 ,  H01L21/76829

摘要： A method of patterning a hard mask, the comprising the following steps. A semiconductor structure is provided. A conductor film is formed over the semiconductor structure. An oxide layer is formed over the conductor film. A patterned metal oxide layer is formed over the conductor film. The oxide layer and the conductor film are etched, using the metal oxide layer as a hard mask, to form a patterned structure.

摘要翻译： 图案化硬掩模的方法，包括以下步骤。 提供半导体结构。 在半导体结构上形成导体膜。 在导体膜上形成氧化物层。 在导体膜上形成图案化的金属氧化物层。 使用金属氧化物层作为硬掩模来蚀刻氧化物层和导体膜，以形成图案化结构。

公开(公告)号：US06177324B1

公开(公告)日：2001-01-23

申请号：US09428568

申请日：1999-10-28

申请人： Jun Song ,  Shyue Fong Quek ,  Ting Cheong Ang ,  Lap Chan

发明人： Jun Song ,  Shyue Fong Quek ,  Ting Cheong Ang ,  Lap Chan

IPC分类号： H01L21336

CPC分类号： H01L29/66621 ,  H01L27/0266 ,  H01L29/0649 ,  H01L29/7834

摘要： A new method is provided for the creation of an ESD protection device for deep submicron semiconductor technology. An STI trench is created and filled with oxide. The surface of the STI region is polished after which a gate structure is created over the STI region. A high energy ESD implant is performed that is self-aligned with the created gate structure after which the EDS device structure is completed by implanting the source and drain regions of the ESD device.

摘要翻译： 提供了一种用于创建深亚微米半导体技术的ESD保护器件的新方法。 产生STI沟槽并填充氧化物。 抛光STI区域的表面，之后在STI区域上形成栅极结构。 执行高能量ESD注入，其与所产生的栅极结构自对准，之后通过注入ESD器件的源极和漏极区域来完成EDS器件结构。