公开(公告)号：US07885042B2

公开(公告)日：2011-02-08

申请号：US11870097

申请日：2007-10-10

申请人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata

发明人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F41/305 ,  Y10T29/49044 ,  Y10T29/49048

摘要： A giant magneto-resistive effect device having a CPP structure comprising a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor layer formed between the first and the second nonmagnetic metal layer. The semiconductor layer is an n-type oxide semiconductor. When the first and second nonmagnetic metal layers are formed in order, the first nonmagnetic metal layer is formed prior to the second nonmagnetic metal layer, and an anti-oxidizing layer is formed between the first nonmagnetic metal layer and the semiconductor layer. The anti-oxidizing layer is formed of a material incapable of producing a Schottky barrier upon joining to the semiconductor layer.

摘要翻译： 具有包括间隔层的CPP结构的巨磁阻效应器件，以及间隔层插入在它们之间的固定磁化层和自由层，并以层叠方向施加感测电流。 间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及形成在第一和第二非磁性金属层之间的半导体层。 半导体层是n型氧化物半导体。 当依次形成第一和第二非磁性金属层时，在第二非磁性金属层之前形成第一非磁性金属层，并且在第一非磁性金属层和半导体层之间形成抗氧化层。 抗氧化层由与半导体层接合时不能产生肖特基势垒的材料形成。

公开(公告)号：US07760475B2

公开(公告)日：2010-07-20

申请号：US11685043

申请日：2007-03-12

申请人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Kei Hirata

发明人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Kei Hirata

IPC分类号： G11B5/127

CPC分类号： H01F10/1936 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/18 ,  G11B5/3906 ,  H01F10/3272 ,  H01F10/3295 ,  Y10T428/1107

摘要： A magnetoresistance effect element includes a pinned layer having a fixed magnetization direction, a free layer having a magnetization direction variable depending on an external magnetic field, and a nonmagnetic spacer layer disposed between the pinned layer and the free layer. The free layer includes a Heusler alloy layer and a magnetostriction reduction layer made of a 4th group element, a 5th group element, or a 6th group element.

摘要翻译： 磁阻效应元件包括具有固定磁化方向的固定层，具有取决于外部磁场的磁化方向可变的自由层和设置在被钉扎层和自由层之间的非磁性间隔层。 自由层包括Heusler合金层和由第4族元素，第5族元素或第6族元素构成的磁致伸缩层。

公开(公告)号：US20100022014A1

公开(公告)日：2010-01-28

申请号：US12517649

申请日：2007-11-07

申请人： Akira Shimotoyodome ,  Junko Suzuki ,  Nanami Takeno ,  Daisuke Fukuoka ,  Tomohito Mizuno ,  Shinichi Meguro

发明人： Akira Shimotoyodome ,  Junko Suzuki ,  Nanami Takeno ,  Daisuke Fukuoka ,  Tomohito Mizuno ,  Shinichi Meguro

IPC分类号： G01N33/86

CPC分类号： G01N33/74 ,  C07K14/62 ,  G01N33/5085 ,  G01N2333/62 ,  G01N2500/00 ,  G01N2800/042 ,  G01N2800/044

摘要： A method for efficiently evaluating or selecting an obesity controlling substance, a blood insulin regulating substance or a blood sugar regulating substance, is provided. A method for evaluating or screening an obesity controller, the method including administering a carbohydrate and a lipid to an animal, and evaluating or selecting a substance which decreases or increases insulin secretion, is also provided.

摘要翻译： 提供了一种有效评价或选择肥胖控制物质，血液胰岛素调节物质或血糖调节物质的方法。 还提供了一种用于评价或筛选肥胖控制器的方法，所述方法包括向动物施用碳水化合物和脂质，以及评估或选择降低或增加胰岛素分泌的物质。

公开(公告)号：US07535682B2

公开(公告)日：2009-05-19

申请号：US11519854

申请日：2006-09-13

申请人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

发明人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

IPC分类号： G11B5/39

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F1/408 ,  H01F10/1936 ,  H01F10/3272

摘要： A magneto-resistance element according to the present invention has a pinned layer whose magnetization direction is fixed; a free layer whose magnetization direction varies in accordance with an external magnetic field; and a nonmagnetic spacer layer that is arranged between the pinned layer and the free layer, at least the pinned layer or the free layer includes a layer having Heusler alloy represented by composition formula X2YZ (where X is a precious metal element, Y is a transition metal of Mn, V, or Ti group, Z is an element from group III to group V), and a part of composition X is replaced with Co, and an atomic composition ratio of Co in composition X is from 0.5 to 0.85.

摘要翻译： 根据本发明的磁阻元件具有固定磁化方向的钉扎层; 其磁化方向根据外部磁场而变化的自由层; 以及布置在被钉扎层和自由层之间的非磁性间隔层，至少被钉扎层或自由层包括由组成式X2YZ（其中X为贵金属元素，Y为过渡层）的Heusler合金层 Mn，V或Ti基的金属，Z是III族至V族的元素），组成X的一部分被Co替代，组合物X中的Co的原子组成比为0.5〜0.85。

公开(公告)号：US20080174920A1

公开(公告)日：2008-07-24

申请号：US11626562

申请日：2007-01-24

申请人： Shinji Hara ,  Kei Hirata ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

发明人： Shinji Hara ,  Kei Hirata ,  Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

IPC分类号： G11B5/56 ,  G11B5/127

CPC分类号： G11B5/4826 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996

摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interleaved between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor oxide layer interleaved between the first and the second nonmagnetic metal layer, wherein the semiconductor oxide layer that forms a part of the spacer layer is made of indium oxide (In2O3), or the semiconductor oxide layer contains indium oxide (In2O3) as its main component, and an oxide containing a tetravalent cation of SnO2 is contained in the indium oxide that is the main component. The semiconductor oxide layer that forms a part of the spacer layer can thus be made thick while the device has a low area resistivity as desired, ensuring much more favorable advantages: ever higher MR performance, prevention of device area resistivity variations, and much improved reliability of film characteristics.

摘要翻译： 本发明提供一种具有CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），其包括间隔层，以及固定磁化层和自由层，所述固定磁化层和自由层彼此层叠， 它们具有沿层叠方向施加的感测电流，其中间隔层包括由非磁性金属材料形成的第一和第二非磁性金属层和交错在第一和第二非磁性金属层之间的半导体氧化物层， 其中形成间隔层的一部分的半导体氧化物层由氧化铟（In 2 O 3 O 3）制成，或者半导体氧化物层含有氧化铟（In < 作为其主要成分的氧化物，包含SnO 2的四价阳离子的氧化物，作为主要成分的氧化铟中含有 。 因此，形成间隔层的一部分的半导体氧化物层可以制成厚度，同时器件根据需要具有低的面积电阻率，确保更有利的优点：越来越高的MR性能，防止器件面积电阻率变化和大大提高的可靠性 的电影特色。

公开(公告)号：US20080170336A1

公开(公告)日：2008-07-17

申请号：US11968911

申请日：2008-01-03

申请人： Yoshihiro TSUCHIYA ,  Tomohito Mizuno ,  Kei Hirata ,  Koji Shimazawa ,  Shinji Hara

发明人： Yoshihiro TSUCHIYA ,  Tomohito Mizuno ,  Kei Hirata ,  Koji Shimazawa ,  Shinji Hara

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3993 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  H01L43/10

摘要： The invention provides a giant magneto-resistive effect device (CPP-GMR device) having the CPP (current perpendicular to plane) structure comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked one upon another with the spacer layer interposed between them, with a sense current applied in a stacking direction, wherein the spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each made of a nonmagnetic metal material, and a semiconductor oxide layer interposed between the first nonmagnetic metal layer and the second nonmagnetic metal layer, the semiconductor oxide layer that forms a part of said spacer layer contains zinc oxide as its main component wherein the main component zinc oxide contains an additive metal, and the additive metal is less likely to be oxidized than zinc. It is thus possible to keep the area resistivity of the device low as desired, and make the semiconductor oxide layer forming a part of the spacer layer thick while holding back any noise increase. This makes sure the excellent advantages that any variation of the area resistivity of the device is inhibited while the S/N is prevented from getting worse, and the reliability of film characteristics is much more improved.

摘要翻译： 本发明提供了一种具有CPP（垂直于平面的电流）结构的巨磁阻效应器件（CPP-GMR器件），该结构包括间隔层，并且第一铁磁层和第二铁磁层彼此层叠，间隔层插入 在它们之间具有沿层叠方向施加的感测电流，其中间隔层包括由非磁性金属材料制成的第一非磁性金属层和第二非磁性金属层，以及介于第一非磁性金属层之间的半导体氧化物层 和第二非磁性金属层，形成所述间隔层的一部分的半导体氧化物层含有氧化锌作为主要成分，其中主要成分氧化锌含有添加金属，并且添加金属不太可能被氧化成锌。 因此，可以根据需要保持器件的面积电阻率低，并且使得形成间隔层的一部分的半导体氧化物层变厚，同时阻止任何噪声增加。 这确保了防止S / N变差的装置的面电阻率的任何变化被抑制的优点，并且膜特性的可靠性得到更大的改善。

公开(公告)号：US20080112096A1

公开(公告)日：2008-05-15

申请号：US11934979

申请日：2007-11-05

申请人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Kei Hirata

发明人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Kei Hirata

IPC分类号： G11B5/33

CPC分类号： G11B5/39 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3993 ,  H01F10/3254 ,  H01L43/10

摘要： The thickness of the semiconductor layer forming a part of the spacer layer is set in the thickness range for a transitional area showing conduction performance halfway between ohmic conduction and semi-conductive conduction in relation to the junction of the semiconductor layer with the first nonmagnetic metal layer and the second nonmagnetic metal layer. This permits the specific resistance of the spacer layer to be greater than that of an ohomic conduction area, so that spin scattering and diffusion depending on a magnetized state increases, resulting in an increase in the MR ratio. The CPP-GMR device can also have a suitable area resistivity (AR) value.If the device can have a suitable area resistivity and a high MR ratio, it is then possible to obtain more stable output power in low current operation than ever before, and extend the service life of the device as well. The device is also lower in resistance than a TMR device, so that significant noise reductions are achievable.

摘要翻译： 形成间隔层的一部分的半导体层的厚度设定在相对于半导体层与第一非磁性金属层的接合部的表现为欧姆导通和半导电传导之间的导通性能的过渡区域的厚度范围 和第二非磁性金属层。 这允许间隔层的比电阻大于欧姆导电面积的电阻，使得依赖于磁化状态的自旋散射和扩散增加，导致MR比的增加。 CPP-GMR装置也可以具有合适的面积电阻率（AR）值。 如果器件可以具有合适的面积电阻率和高的MR比，那么在低电流操作中可以获得比以往更稳定的输出功率，并且延长器件的使用寿命。 该器件的电阻也比TMR器件低，从而可以实现显着的降噪。

公开(公告)号：US20080112091A1

公开(公告)日：2008-05-15

申请号：US11896707

申请日：2007-09-05

申请人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

发明人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

IPC分类号： G11B5/33

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G11B5/3929 ,  G11B2005/3996

摘要： A spacer layer of an MR element includes: a nonmagnetic metal layer disposed on a pinned layer; a protection layer disposed on the nonmagnetic metal layer to prevent oxidation or nitriding of the nonmagnetic metal layer; an island-shaped insulating layer disposed on the protection layer; and a coating layer covering these layers. When seen in a direction perpendicular to the top surface of the pinned layer, there are formed in the spacer layer a region where the insulating layer is present and a region where the insulating layer is absent. A thickness of the protection layer taken in at least part of the region where the insulating layer is absent is zero or smaller than a thickness of the protection layer taken in the region where the insulating layer is present.

摘要翻译： MR元件的间隔层包括：设置在钉扎层上的非磁性金属层; 设置在所述非磁性金属层上以防止所述非磁性金属层的氧化或氮化的保护层; 设置在保护层上的岛状绝缘层; 以及覆盖这些层的涂层。 当在垂直于被钉扎层的顶表面的方向上观察时，在间隔层中形成绝缘层存在的区域和绝缘层不存在的区域。 在绝缘层不存在的区域的至少一部分中取出的保护层的厚度为保护层的厚度在与绝缘层存在的区域相同的厚度以上。

公开(公告)号：US20070291422A1

公开(公告)日：2007-12-20

申请号：US11708537

申请日：2007-02-21

申请人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata ,  Keita Kawamori ,  Koji Shimazawa

发明人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Kei Hirata ,  Keita Kawamori ,  Koji Shimazawa

IPC分类号： G11B5/39 ,  G11B5/33 ,  G11B5/48

CPC分类号： G11B5/3906 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3163 ,  H01L43/12 ,  Y10T428/1121

摘要： A method for manufacturing a magnetic field detecting element has the steps of: forming stacked layers by sequentially depositing a pinned layer, a spacer layer, a spacer adjoining layer which is adjacent to the spacer layer, a metal layer, and a Heusler alloy layer in this order, such that the layers adjoin each other; and heat treating the stacked layers in order to form the free layer out of the spacer adjoining layer, the metal layer, and the Heusler alloy layer. The spacer adjoining layer is mainly formed of cobalt and iron, and has a body centered cubic structure, and the metal layer is formed of an element selected from the group consisting of silver, gold, copper, palladium, or platinum, or is formed of an alloy thereof.

摘要翻译： 一种制造磁场检测元件的方法，其特征在于：通过依次沉积与间隔层相邻的钉扎层，间隔层，间隔物邻接层，金属层和Heusler合金层，形成堆叠层 这个顺序，使得这些层彼此相邻; 并且对层叠层进行热处理，以便在间隔物邻接层，金属层和Heusler合金层之间形成自由层。 间隔物邻接层主要由钴和铁形成，并且具有体心立方结构，金属层由选自银，金，铜，钯或铂的元素形成，或者由 其合金。

公开(公告)号：US20070217087A1

公开(公告)日：2007-09-20

申请号：US11723143

申请日：2007-03-16

申请人： Kei Hirata ,  Keita Kawamori ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Koji Shimazawa

发明人： Kei Hirata ,  Keita Kawamori ,  Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Koji Shimazawa

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3906 ,  H01F10/1936 ,  H01F10/3272 ,  H01L27/222 ,  H01L43/10

摘要： A magnetic thin film has a layer which is formed of an alloy having a ordered crystal structure whose composition formula is represented by XYZ or X2YZ (where X is one or more than one of the elements selected from the group consisting of Co, Ir, Rh, Pt, and Cu, Y is one or more than one of the elements selected from the group consisting of V, Cr, Mn, and Fe, and Z is one or more than one of the elements selected the group consisting of Al, Si, Ge, As, Sb, Bi, In, Ti, and Pb). The alloy contains at least one additive element which is not included in the composition formula of the alloy and which has a Debye temperature that is equal to or less than 300K.

摘要翻译： 磁性薄膜具有由具有有序晶体结构的合金形成的层，其组成式由XYZ或X 2 YZ表示（其中X是选自以下的元素中的一种或多于一种元素： 由Co，Ir，Rh，Pt和Cu组成的组，Y是选自V，Cr，Mn和Fe中的一种或多种元素，Z是一种或多于一种 元素选自Al，Si，Ge，As，Sb，Bi，In，Ti和Pb组成的组）。 该合金含有至少一种添加元素，其不包括在合金的组成式中，并且德拜温度等于或小于300K。