利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

141 条记录 (耗时 0.027 秒)

    OPTICAL WAVEGUIDE FOR TOUCH PANEL
    61.
    发明申请
    OPTICAL WAVEGUIDE FOR TOUCH PANEL 审中-公开
    用于触摸面板的光学波形

    公开(公告)号：US20120099818A1

    公开(公告)日：2012-04-26

    申请号：US13267580

    申请日：2011-10-06

    申请人： Naoki Shibata ,  Yusuke Shimizu

    发明人： Naoki Shibata ,  Yusuke Shimizu

    IPC分类号： G02B6/32

    CPC分类号： G06F3/0428 ,  G02B6/0078 ,  G02B6/26 ,  G06F3/0421 ,  G06F2203/04103

    摘要： The optical waveguide is disposed along the periphery of a display screen of a display of a touch panel. A light-emitting optical waveguide section and a light-receiving optical waveguide section are disposed in an alternating pattern along each edge of the display screen. Both of the light-emitting optical waveguide section and the light-receiving optical waveguide section are coupled together by placing end surfaces of end portions of the light-emitting optical waveguide section and the light-receiving optical waveguide section in abutment with each other. The light-emitting optical waveguide section includes cores each having an end portion provided in the form of a light-emitting lens portion. The light-emitting lens portion has an end surface provided in the form of a light-emitting lens surface. The light-receiving optical waveguide section includes cores each having an end portion provided in the form of a light-receiving lens portion corresponding to the light-emitting lens portion.

    摘要翻译： 光波导沿着触摸面板的显示器的显示屏的外围设置。 发光光波导部分和光接收光波导部分沿着显示屏的每个边缘以交替图案设置。 通过使发光光波导路部分和光接收光波导路段的端部表面彼此邻接，发光光波导路段和光接收光波导路段都被耦合在一起。 发光光波导部分包括具有以发光透镜部分的形式设置的端部的芯。 发光透镜部具有以发光透镜表面的形式设置的端面。 光接收光波导部分包括各自具有以对应于发光透镜部分的受光透镜部分的形式设置的端部的芯。

    Light-emitting semiconductor device using group III nitrogen compound
    62.
    发明申请
    Light-emitting semiconductor device using group III nitrogen compound 审中-公开
    使用III族氮化合物的发光半导体器件

    公开(公告)号：US20110101412A1

    公开(公告)日：2011-05-05

    申请号：US12929231

    申请日：2011-01-10

    申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

    发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

    IPC分类号： H01L33/32

    CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40

    摘要： A method of producing a light-emitting semiconductor device of a group III nitride compound includes forming an N-layer of an N-type conduction, the N-layer comprising gallium nitride, forming a high carrier concentration N+-layer satisfying the formula (Alx3Ga1-x3)y3In1-y3N, wherein 0≦x3≦1, 0≦y3≦1 and 0≦x3+y3≦1, on the N-layer, forming an emission layer of a group III nitride compound semiconductor satisfying the formula, Alx1Gay1In1-x1-y1N, where 0≦x1≦1, 0≦y1≦1 and 0≦x1+y1≦1 on the high carrier concentration layer N+layer, doping Si and Zn into the emission layer, forming a P-layer of a P-type conduction, on the emission layer, the P-layer including aluminum gallium nitride satisfying the formula Alx2Ga1-x2N, wherein 0≦x2≦1, and forming a contact layer of a P-type conduction, on the P-type layer, the contact layer including gallium nitride.

    摘要翻译： 制造III族氮化物化合物的发光半导体器件的方法包括形成N型导电的N层，N层包括氮化镓，形成满足式（Al x Ga 1 -x3）y3In1-y3N，其中在N层上形成满足公式的III族氮化物化合物半导体的发射层Al x1Gay1In1，其中0和nlE; x3和nlE; 1,0和n1E; y3和nlE; 1和0＆lt; n1E; x3 + y3＆ -x1-y1N，其中0＆nlE; x1＆nlE; 1,0和nlE; y1＆nlE; 1和0＆nlE; x1 + y1＆nlE; 1在高载流子浓度层N +层上，将Si和Zn掺杂到发射层中，形成P层 在发射层上的P型导电，包含满足式Al x Ga 1-x 2 N的氮化铝镓的P层，其中0＆lt; n1E; x2＆nlE; 1，并且在P型上形成P型导电的接触层 层，接触层包括氮化镓。

    n-Electrode for III group nitride based compound semiconductor element
    63.
    发明授权
    n-Electrode for III group nitride based compound semiconductor element 有权
    用于III族氮化物基化合物半导体元件的n电极

    公开(公告)号：US07872274B2

    公开(公告)日：2011-01-18

    申请号：US10415915

    申请日：2002-09-02

    申请人： Shunsuke Murai ,  Masanori Murakami ,  Yasuo Koide ,  Naoki Shibata

    发明人： Shunsuke Murai ,  Masanori Murakami ,  Yasuo Koide ,  Naoki Shibata

    IPC分类号： H01L33/00

    CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/456 ,  H01L33/32

    摘要： An object of the present invention is to obtain greater reduction in resistance between an n-electrode and an n-type layer made of a Group III nitride compound semiconductor. According to the present invention, the n-electrode is formed with a first electrode material made of at least one member selected from the group consisting of vanadium (V), titanium (Ti), zirconium (Zr) and tungsten (W), a second electrode material made of at least one member selected from the group consisting of palladium (Pd), platinum (Pt), gold (Au), silver (Ag) and copper (Cu), and a third electrode material made of at least one member selected from the group consisting of aluminum (Al), silicon (Si) and germanium (Ge).

    摘要翻译： 本发明的目的是获得由III族氮化物半导体制成的n电极和n型层之间的电阻的更大的降低。 根据本发明，n电极由选自钒（V​​），钛（Ti），锆（Zr）和钨（W））中的至少一种构成的第一电极材料形成， 由选自钯（Pd），铂（Pt），金（Au），银（Ag）和铜（Cu）中的至少一种构成的第二电极材料，以及由至少一种 选自铝（Al），硅（Si）和锗（Ge）的成员。

    Light-emitting semiconductor device using group III nitrogen compound
    64.
    发明授权
    Light-emitting semiconductor device using group III nitrogen compound 有权
    使用III族氮化合物的发光半导体器件

    公开(公告)号：US07867800B2

    公开(公告)日：2011-01-11

    申请号：US12003173

    申请日：2007-12-20

    申请人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

    发明人： Katsuhide Manabe ,  Hisaki Kato ,  Michinari Sassa ,  Shiro Yamazaki ,  Makoto Asai ,  Naoki Shibata ,  Masayoshi Koike

    IPC分类号： H01L21/00

    CPC分类号： H01L33/32 ,  H01L33/0025 ,  H01L33/007 ,  H01L33/325 ,  H01L33/38 ,  H01L33/382 ,  H01L33/385 ,  H01L33/40

    摘要： A light-emitting semiconductor device (10) consecutively includes a sapphire substrate (1), an AlN buffer layer (2), a silicon (Si) doped GaN n+-layer (3) of high carrier (n-type) concentration, a Si-doped (Alx3Ga1−x3)y3In1−y3N n+-layer (4) of high carrier (n-type) concentration, a zinc (Zn) and Si-doped (Alx2Ga1−x2)y2In1−y2N emission layer (5), and a Mg-doped (Alx1Ga1−x1)y1In1−y1N p-layer (6). The AlN layer (2) has a 500 Å thickness. The GaN n+-layer (3) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The n+-layer (4) has about a 2.0 μm thickness and a 2×1018/cm3 electron concentration. The emission layer (5) has about a 0.5 μm thickness. The p-layer 6 has about a 1.0 μm thickness and a 2×1017/cm3 hole concentration. Nickel electrodes (7, 8) are connected to the p-layer (6) and n+-layer (4), respectively. A groove (9) electrically insulates the electrodes (7, 8). The composition ratio of Al, Ga, and In in each of the layers (4, 5, 6) is selected to meet the lattice constant of GaN in the n+-layer (3). The LED (10) is designed to improve luminous intensity and to obtain purer blue color.

    摘要翻译： 发光半导体器件（10）连续地包括蓝宝石衬底（1），AlN缓冲层（2），高载流子（n型）掺杂的硅（Si）掺杂的GaN n +层（3）， 具有高载流子（n型）浓度的Si掺杂（Al x Ga 1-x 3）y 3 In 1-y 3 N n +层（4），锌（Zn）和Si掺杂（Alx2Ga1-x2）y2In1-y2N发射层（5） 和Mg掺杂（Al x Ga 1-x 1）y 1 In 1-y 1 N p层（6）。 AlN层（2）的厚度为500埃。 GaN n +层（3）的厚度约为2.0μm，电子浓度为2×1018 / cm3。 n +层（4）的厚度约为2.0μm，电子浓度为2×1018 / cm3。 发射层（5）的厚度约为0.5μm。 p层6的厚度约为1.0μm，空穴浓度为2×1017 / cm3。 镍电极（7,8）分别连接到p层（6）和n +层（4）。 一个凹槽（9）使电极（7,8）电绝缘。 选择各层（4,5,6）中的Al，Ga和In的组成比以满足n +层（3）中的GaN的晶格常数。 LED（10）被设计为提高发光强度并获得更纯的蓝色。