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    Electrode for p-type Group III nitride compound semiconductor layer and method for producing the same
    3.
    发明授权
    Electrode for p-type Group III nitride compound semiconductor layer and method for producing the same 有权
    p型III族氮化物半导体层用电极及其制造方法

    公开(公告)号：US07190076B2

    公开(公告)日：2007-03-13

    申请号：US10695453

    申请日：2003-10-29

    申请人： Ippei Fujimoto ,  Tsutomu Sekine ,  Miki Moriyama ,  Masanori Murakami ,  Naoki Shibata

    发明人： Ippei Fujimoto ,  Tsutomu Sekine ,  Miki Moriyama ,  Masanori Murakami ,  Naoki Shibata

    IPC分类号： H01L23/48 ,  H01L29/40 ,  H01L29/20 ,  H01L33/00 ,  H01L29/02

    CPC分类号： H01L29/452 ,  H01L21/28575 ,  H01L29/2003 ,  H01L33/32 ,  H01L33/40

    摘要： A GaN layer is formed on a sapphire substrate through an AlN buffer layer and doped with Mg to prepare a laminate (referred to as “GaN substrate”). A metal (Pt and Ni) electrode 50 nm thick is formed on the GaN substrate by (1) vapor deposition after the GaN substrate is heated to a temperature of 300° C. or by (2) vapor deposition while the GaN substrate is left at room temperature. (3) The electrode obtained in (2) is heated to 300° C. in a nitrogen atmosphere. The contact resistance of the electrode obtained in (1) is lower by two or three digits than that of the electrode obtained in (2) or (3). That is, the electric characteristic of the electrode obtained in (1) is improved greatly.

    摘要翻译： 通过AlN缓冲层在蓝宝石衬底上形成GaN层，并掺杂Mg以制备层压体（称为“GaN衬底”）。 通过（1）在GaN衬底被加热到300℃之后或通过（2）气相沉积在GaN衬底留下时，通过（1）气相沉积在GaN衬底上形成50nm厚的金属（Pt和Ni）电极 在室温下。 （3）将（2）得到的电极在氮气氛中加热至300℃。 （1）中获得的电极的接触电阻比在（2）或（3）中获得的电极的接触电阻低两位或三位数。 也就是说，（1）中得到的电极的电特性大大提高。

    III nitride compound semiconductor element an electrode forming method
    7.
    发明授权
    III nitride compound semiconductor element an electrode forming method 有权
    III族氮化物化合物半导体元件电极形成方法

    公开(公告)号：US06806571B2

    公开(公告)日：2004-10-19

    申请号：US10239895

    申请日：2003-02-19

    申请人： Naoki Shibata ,  Toshiya Uemura ,  Makoto Asai ,  Yasuo Koide ,  Masanori Murakami

    发明人： Naoki Shibata ,  Toshiya Uemura ,  Makoto Asai ,  Yasuo Koide ,  Masanori Murakami

    IPC分类号： H01L3300

    CPC分类号： H01L33/40 ,  H01L21/242 ,  H01L21/28575 ,  H01L33/0095 ,  H01L33/06 ,  H01L33/32 ,  H01S5/0213 ,  H01S5/32341

    摘要： An AlN buffer layer 2; a silicon (Si)-doped GaN high-carrier-concentration n+ layer 3; an Si-doped n-type Al0.07Ga0.93N n-cladding layer 4; an Si-doped n-type GaN n-guide layer 5; an active layer 6 having a multiple quantum well (MQW) structure, and including a Ga0.9In0.1N well layer 61 (thickness: about 2 nm) and a Ga0.97In0.03N barrier layer 62 (thickness: about 4 nm), the layers 61 and 62 being laminated alternately; an Mg-doped GaN p-guide layer 7; an Mg-doped Al0.07Ga0.93N p-cladding layer 8; and an Mg-doped GaN p-contact layer 9 are successively formed on a sapphire substrate. A p-electrode 10 is formed of a film of titanium nitride (TiN) or tantalum nitride (TaN) (thickness: 50 nm). The contact resistance of this electrode is reduced through heat treatment.

    摘要翻译： AlN缓冲层2; 硅（Si）掺杂的GaN高载流子浓度n + 3层; Si掺杂n型Al0.07Ga0.93N n包层4; Si掺杂的n型GaN n引导层5; 具有多量子阱（MQW）结构的有源层6，并且包括Ga 0.9 In 0.1 N阱层61（厚度：约2nm）和Ga 0.97 In 0.03 N势垒层62（厚度：约4nm）， 层61和62交替层压; Mg掺杂的GaN p引导层7; Mg掺杂的Al0.07Ga0.93N p型包层8; 并且在蓝宝石衬底上依次形成Mg掺杂的GaN p接触层9。 p电极10由氮化钛（TiN）或氮化钽（TaN）（厚度：50nm）的膜形成。 该电极的接触电阻通过热处理而降低。

    n-Electrode for III group nitride based compound semiconductor element
    9.
    发明授权
    n-Electrode for III group nitride based compound semiconductor element 有权
    用于III族氮化物基化合物半导体元件的n电极

    公开(公告)号：US07872274B2

    公开(公告)日：2011-01-18

    申请号：US10415915

    申请日：2002-09-02

    申请人： Shunsuke Murai ,  Masanori Murakami ,  Yasuo Koide ,  Naoki Shibata

    发明人： Shunsuke Murai ,  Masanori Murakami ,  Yasuo Koide ,  Naoki Shibata

    IPC分类号： H01L33/00

    CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/456 ,  H01L33/32

    摘要： An object of the present invention is to obtain greater reduction in resistance between an n-electrode and an n-type layer made of a Group III nitride compound semiconductor. According to the present invention, the n-electrode is formed with a first electrode material made of at least one member selected from the group consisting of vanadium (V), titanium (Ti), zirconium (Zr) and tungsten (W), a second electrode material made of at least one member selected from the group consisting of palladium (Pd), platinum (Pt), gold (Au), silver (Ag) and copper (Cu), and a third electrode material made of at least one member selected from the group consisting of aluminum (Al), silicon (Si) and germanium (Ge).

    摘要翻译： 本发明的目的是获得由III族氮化物半导体制成的n电极和n型层之间的电阻的更大的降低。 根据本发明，n电极由选自钒（V​​），钛（Ti），锆（Zr）和钨（W））中的至少一种构成的第一电极材料形成， 由选自钯（Pd），铂（Pt），金（Au），银（Ag）和铜（Cu）中的至少一种构成的第二电极材料，以及由至少一种 选自铝（Al），硅（Si）和锗（Ge）的成员。