摘要:
An electron source (10) has an electron source element (10a) including a lower electrode (12), a drift layer (6) and a surface electrode (7). The drift layer (6) is interposed between the lower electrode (12) and the surface electrode (7). When a certain voltage is applied between the surface electrode (7) and the lower electrode (12) such that the surface electrode (7) has a higher potential than that of the lower electrode (12), a resultingly induced electric field allows electrons to pass through the drift layer (6) and then the electrons are emitted through the surface electrode (7). When a forward-bias voltage is applied between the surface electrode (7) and the lower electrode (12), a reverse-bias voltage is applied after the forward-bias voltage has been applied to release out of the drift layer (6) an electron captured by a trap (9) in the drift layer (6).
摘要:
A lower electrode (2) and surface electrode (7) composed of a layer-structured conductive carbide layer is formed on one principal surface side of the substrate (1) composed of an insulative substrate such as a glass or ceramic substrate. A non-doped polycrystalline silicon layer (3) is formed on the lower electrode (2). An electron transit layer (6) composed of an oxidized porous polycrystalline silicon is formed on the polycrystalline silicon layer (3). The electron transit layer (6) is composed of a composite nanocrystal layer including polycrystalline silicon and many nanocrystalline silicons residing adjacent to a grain boundary of the polycrystalline silicon. When voltage is applied between the lower electrode (2) and the surface electrode (7) such that the surface electrode (7) has a higher potential, electrons are injected from the lower electrode (2) toward the surface electrode (7), and emitted through the surface electrode (7) through the electron transit layer (6).
摘要:
A field emission-type electron source (10) is provided with a conductive substrate (1), a semiconductor layer formed on a surface of the conductive substrate (1), at least a part of the semiconductor layer being made porous, and a conductive thin film (7) formed on the semiconductor layer. Electrons injected into the conductive substrate (1) are emitted from the conductive thin film (7) through the semiconductor layer by applying a voltage between the conductive thin film (7) and the conductive substrate (1) in such a manner that the conductive thin film (7) acts as a positive electrode against the conductive substrate (1). The semiconductor layer includes a porous semiconductor layer (6) in which columnar structures (21) and porous structures (25) composed of fine semiconductor crystals of nanometer scale coexist, a surface of each of the structures being covered with an insulating film (22,24). Further, an average dimension of each of the porous structures (25) in a thickness direction of the semiconductor layer is smaller than or equal to 2 &mgr;m.
摘要:
When determining a direction in which pixels highly correlated with a defective pixel exist, it is determined whether the direction is the horizontal or vertical direction or the oblique direction from signal values of peripheral pixels of the same color as the defective pixel. On the other hand, one of the vertical direction and the horizontal direction and one of a plurality of predetermined oblique directions are determined from signal values of peripheral pixels of different colors from the defective pixel, and one direction is selected as the final direction determination result according to a determination result obtained by using pixels of the same color.
摘要:
In an image capturing apparatus, a first image data is stored in a first storage; second image data of a low resolution is generated by the first reducing; enlarged image data is generated; low resolution image data is generated from the first image data through processing that is different from that performed by the first reducing, the low resolution image data have the same pixel count as the first image data and a lower resolution than that of the first image data; one of first image processing in which the first image data is combined with the enlarged image data or second image processing in which the first image data is combined with the low resolution image data is executed; and the processing is switched between the first image processing and the second image processing, according to a shooting operation.
摘要:
An object is to suppress a false color and moire that occur in a high-frequency region. Color interpolation circuits of a color-difference signal generating circuit separate an image signal obtained from an image pickup device, in which a plurality of color filters are arranged in a predetermined pattern and in which pixels corresponding to the respective color filters are provided, into image signals of the respective color filters (R, G1, G2, and B), and perform an interpolation process on the image signals of the respective color filters. Then, a false color determining circuit determines whether a target region is a high-frequency region on the basis of at least any of slopes of image signals of the G1 filter and the G2 filter and a difference between the image signals of the G1 filter and the G2 filter in the target region.
摘要:
A direction in which pixels highly correlated with a signal value of a pixel of interest exist is determined by using both signal values of a plurality of pixels of different colors from the pixel of interest and of a plurality of pixels of the same color as the pixel of interest among a plurality of peripheral pixels of the pixel of interest, and obtains pixel correction values corresponding to the respective directions. Weighted addition of those pixel correction values is performed in accordance with the degree to which the pixel of interest is of an achromatic color, and the pixel correction value for the pixel of interest is thus obtained.
摘要:
The present invention provides an image processing apparatus for detecting, from image data generated by an image sensor constituted by a plurality of pixels, a signal from a defective pixel of the image sensor, including first determination means for obtaining a first determination value indicating a magnitude of a difference in signal level between a pixel of interest and a plurality of pixels located in the neighborhood of the pixel of interest, second determination means for obtaining a second determination value indicating a width of distribution of the difference in signal level between the pixel of interest and the plurality of pixels located in the neighborhood of the pixel of interest, and detection means for detecting whether or not the signal from the pixel of interest is a defective pixel signal, using the first determination value and the second determination value.
摘要:
Disclosed is a photoelectric conversion element comprising an anode, a cathode, and an active layer between the anode and the cathode, wherein the active layer includes an n-type semiconductor and a p-type semiconductor, and an area of a p-n junction between the n-type semiconductor and the p-type semiconductor is 100 μm2 or more per 1 μm3 of the active layer.
摘要:
An image sensing apparatus calculates the first white balance control data on the basis of representative values of data for respective color components for at least some of image sensing data, or data of average values of the color components. The apparatus calculates the second white balance control data obtained by correcting the first white balance control data on the basis of the correlation between the first flashing information sent from an electronic flash device and the second flashing information sent from the electronic flash device in photography. The apparatus performs white balance adjustment in regular photography using the second white balance control data.