ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    61.
    发明申请
    ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    有机发光显示装置及其制造方法

    公开(公告)号:US20130015457A1

    公开(公告)日:2013-01-17

    申请号:US13310560

    申请日:2011-12-02

    申请人: Chun-Gi You

    发明人: Chun-Gi You

    IPC分类号: H01L33/16 H01L29/786

    摘要: An organic light-emitting display device and a method of manufacturing the same. The organic light-emitting display device includes: a thin-film transistor including an active layer, a gate electrode comprising a first electrode and a second electrode on the first electrode, and source and drain electrodes; an organic light-emitting device including a pixel electrode electrically connected to the thin-film transistor and including nano-Ag, an intermediate layer comprising a light-emitting layer, and an opposite electrode covering the intermediate layer and facing the pixel electrode; and a pad electrode formed on the same plane as and formed of the same material as the first electrode in a pad area outside of a light-emitting area.

    摘要翻译: 一种有机发光显示装置及其制造方法。 有机发光显示装置包括:包括有源层的薄膜晶体管,在第一电极上包括第一电极和第二电极的栅电极以及源极和漏极; 包括与薄膜晶体管电连接并且包括纳米Ag的像素电极的有机发光器件,包括发光层的中间层和覆盖中间层并且面向像素电极的相对电极; 以及焊盘电极,其在与发光区域外的焊盘区域中与第一电极相同的材料形成在同一平面上并由其形成。

    ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    62.
    发明申请
    ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
    有机发光显示装置及其制造方法

    公开(公告)号:US20120286281A1

    公开(公告)日:2012-11-15

    申请号:US13239202

    申请日:2011-09-21

    申请人: Chun-Gi You

    发明人: Chun-Gi You

    IPC分类号: H01L33/02

    摘要: An organic light-emitting display device includes a thin film transistor (TFT) including an active layer, a gate electrode comprising a first electrode and a second electrode, a source electrode, and a drain electrode, a photoresist layer on the source electrode and the drain electrode, a pixel electrode electrically coupled to the TFT, comprising a same material as the first electrode, and at a same layer as the first electrode, a pixel defining layer having a hole exposing the pixel electrode, the pixel defining layer covering the photoresist layer, an intermediate layer on the pixel electrode and comprising a light-emitting layer, and an opposite electrode covering the intermediate layer and facing the pixel electrode.

    摘要翻译: 一种有机发光显示装置,包括:包括有源层的薄膜晶体管(TFT),包括第一电极和第二电极的栅电极,源电极和漏电极,源电极上的光致抗蚀剂层和 漏电极,电耦合到TFT的像素电极,包括与第一电极相同的材料,并且与第一电极相同的层,具有暴露像素电极的孔的像素限定层,覆盖光致抗蚀剂的像素限定层 层,像素电极上的中间层,并且包括发光层,以及覆盖中间层并且面向像素电极的相对电极。

    Thin film transistor array panel and manufacturing method thereof
    63.
    发明授权
    Thin film transistor array panel and manufacturing method thereof 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US08164097B2

    公开(公告)日:2012-04-24

    申请号:US12326841

    申请日:2008-12-02

    IPC分类号: H01L27/14

    摘要: A method of manufacturing a thin film transistor array panel is provided, which includes: forming a thin film transistor including a gate electrode, a drain electrode, a source electrode and a semiconductor on a substrate; forming a first passivation layer on the drain and the source electrodes; forming a transparent conductive layer on the first passivation layer; etching the transparent conductive layer using a photoresist as an etch mask to expose the portion of the first passivation layer and to form a pixel electrode connected the drain electrode; ashing the first passivation layer and the photoresist; and removing the photoresist.

    摘要翻译: 提供一种制造薄膜晶体管阵列面板的方法,其包括:在衬底上形成包括栅电极,漏电极,源电极和半导体的薄膜晶体管; 在漏极和源电极上形成第一钝化层; 在所述第一钝化层上形成透明导电层; 使用光致抗蚀剂蚀刻透明导电层作为蚀刻掩模以暴露第一钝化层的部分并形成连接漏电极的像素电极; 灰化第一钝化层和光致抗蚀剂; 并去除光致抗蚀剂。

    Active type display device
    64.
    发明授权
    Active type display device 有权
    主动式显示装置

    公开(公告)号:US08143621B2

    公开(公告)日:2012-03-27

    申请号:US11544088

    申请日:2006-10-06

    申请人: Se-Il Cho Chun-Gi You

    发明人: Se-Il Cho Chun-Gi You

    IPC分类号: H01L29/04

    摘要: The display device according to an exemplary embodiment of the present invention includes an insulation substrate, a first signal line formed on the insulation substrate, a second signal line intersecting and insulated from the first signal line, an covering member formed on the second signal line, and a switching element having a first terminal, a second terminal, and a third terminal, wherein the first terminal is connected to the first signal line and the second terminal is connected to the second signal line, and a pixel electrode is connected to the third terminal of the switching element. The covering member according to an embodiment of the present invention reduces the etching error in forming a fine pattern.

    摘要翻译: 根据本发明的示例性实施例的显示装置包括绝缘基板,形成在绝缘基板上的第一信号线,与第一信号线相交和绝缘的第二信号线,形成在第二信号线上的覆盖部件, 以及具有第一端子,第二端子和第三端子的开关元件,其中所述第一端子连接到所述第一信号线,并且所述第二端子连接到所述第二信号线,并且像素电极连接到所述第三端子 端子的开关元件。 根据本发明的实施例的覆盖部件减少了形成精细图案的蚀刻误差。

    Thin film transistor having oxide semiconductor layer as ohmic contact
layer and method of fabricating the same
    65.
    发明申请
    Thin film transistor having oxide semiconductor layer as ohmic contact layer and method of fabricating the same 有权
    具有氧化物半导体层作为欧姆接触层的薄膜晶体管及其制造方法

    公开(公告)号:US20110127520A1

    公开(公告)日:2011-06-02

    申请号:US12926114

    申请日:2010-10-27

    申请人: Chun-Gi You

    发明人: Chun-Gi You

    IPC分类号: H01L29/786 H01L21/44

    CPC分类号: H01L29/7869 H01L29/78678

    摘要: A thin film transistor TFT, including a substrate, a gate electrode on the substrate, a gate insulating layer on the gate electrode, an active layer on the gate insulating layer, the active layer corresponding to the gate electrode and including a channel region, source and drain electrodes contacting the active layer, the source and drain electrodes being separate from each other, and an ohmic contact layer between the active layer and at least one of the source and drain electrodes, the ohmic contact layer including an oxide semiconductor material.

    摘要翻译: 一种薄膜晶体管TFT,包括基板,在基板上的栅电极,栅电极上的栅极绝缘层,栅极绝缘层上的有源层,对应于栅电极的有源层,并包括沟道区,源 以及与有源层接触的漏电极,源电极和漏电极彼此分离,以及有源层与至少一个源极和漏极之间的欧姆接触层,欧姆接触层包括氧化物半导体材料。

    Thin film transistor array panel and method for manufacturing the same
    66.
    发明授权
    Thin film transistor array panel and method for manufacturing the same 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US07799594B2

    公开(公告)日:2010-09-21

    申请号:US12354130

    申请日:2009-01-15

    申请人: Chun-Gi You

    发明人: Chun-Gi You

    IPC分类号: H01L21/00

    CPC分类号: H01L27/1288 H01L27/1255

    摘要: A thin film transistor array panel includes a substrate; a first gate line disposed on the substrate and including a gate electrode; a storage electrode disposed in a layer which is the same layer as a layer of the first gate line; a gate insulating layer disposed on the first gate line and the storage electrode; a semiconductor disposed on the gate insulating layer and including a channel portion; a data line disposed on the semiconductor and including a source electrode; a drain electrode disposed on the semiconductor and facing the source electrode; a passivation layer disposed on the gate insulating layer, the data line, and the drain electrode, the passivation layer including a contact hole which exposes a portion of the drain electrode; and a pixel electrode disposed on the passivation layer and electrically connected to the drain electrode through the contact hole, wherein the gate insulating layer and the passivation layer are interposed between the pixel electrode and the substrate except for a region corresponding to the contact hole, and wherein the pixel electrode overlaps the storage electrode via the gate insulating layer and the passivation layer.

    摘要翻译: 薄膜晶体管阵列面板包括基板; 设置在所述基板上并包括栅电极的第一栅极线; 存储电极,设置在与所述第一栅极线的层相同的层中; 设置在第一栅极线和存储电极上的栅极绝缘层; 设置在所述栅极绝缘层上并包括沟道部分的半导体; 数据线,设置在所述半导体上并且包括源电极; 设置在所述半导体上并面向所述源电极的漏电极; 设置在所述栅绝缘层,所述数据线和所述漏电极上的钝化层,所述钝化层包括露出所述漏电极的一部分的接触孔; 以及设置在所述钝化层上并通过所述接触孔电连接到所述漏电极的像素电极,其中除了与所述接触孔对应的区域之外,所述栅极绝缘层和所述钝化层插入在所述像素电极和所述基板之间,以及 其中所述像素电极经由所述栅极绝缘层和所述钝化层与所述存储电极重叠。

    ORGANIC LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    67.
    发明申请
    ORGANIC LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
    有机发光装置及其制造方法

    公开(公告)号:US20100156281A1

    公开(公告)日:2010-06-24

    申请号:US12535635

    申请日:2009-08-04

    申请人: Chun-Gi You

    发明人: Chun-Gi You

    IPC分类号: H01J1/63 H01L21/00

    摘要: An organic light emitting device including a pixel area displaying images and a peripheral area that is a peripheral portion of the pixel area is disclosed. A manufacturing method of an organic light emitting device includes: forming a switching element of the pixel area; forming a peripheral signal line in the peripheral area; forming a passivation layer on the switching element and the peripheral signal line; forming an overcoat and a remaining layer on the passivation layer; forming a transflective member and a thickness control layer on the overcoat; removing the remaining layer; forming a pixel electrode on the transflective member and the thickness control layer; forming an organic light emitting member on the pixel electrode; and forming a common electrode on the organic light emitting member. The remaining layer is maintained in the peripheral area such that the etchant is prevented from penetrating into the peripheral signal line, thereby preventing the corrosion of the peripheral signal line.

    摘要翻译: 公开了一种包括显示图像的像素区域和作为像素区域的周边部分的周边区域的有机发光装置。 有机发光器件的制造方法包括:形成像素区域的开关元件; 在周边区域形成外围信号线; 在开关元件和外围信号线上形成钝化层; 在钝化层上形成外涂层和剩余层; 在外涂层上形成半透反射构件和厚度控制层; 去除剩余的层; 在半透反射构件和厚度控制层上形成像素电极; 在像素电极上形成有机发光部件; 以及在有机发光部件上形成公共电极。 剩余的层保持在周边区域中,使得蚀刻剂不被穿透到外围信号线中,从而防止外围信号线的腐蚀。

    Thin film transistor panel and manufacturing method thereof
    68.
    发明授权
    Thin film transistor panel and manufacturing method thereof 有权
    薄膜晶体管面板及其制造方法

    公开(公告)号:US07728331B2

    公开(公告)日:2010-06-01

    申请号:US11856489

    申请日:2007-09-17

    IPC分类号: H01L29/04

    摘要: A thin film transistor array panel including a substrate, a gate line and a gate-layer signal transmitting line of a gate driving circuit portion formed on the substrate, a gate insulating layer formed on the gate line and the gate-layer signal transmitting line and having a first contact hole exposing a portion of the gate-layer signal transmitting line, a semiconductor layer formed on the gate insulating layer, a data line including a source electrode, and a drain electrode formed on the gate insulating layer and the semiconductor layer, a data-layer signal transmitting line of the gate driving circuit portion formed on the gate insulating layer and connected to the gate-layer signal transmitting line through the first contact hole, a pixel electrode connected to the drain electrode, and a passivation layer formed on the data line, the drain electrode, and the data-layer signal transmitting line of the driving circuit portion. The data line, the drain electrode, and the data-layer signal transmitting line have a triple-layered structure including a lower layer, an intermediate layer, and an upper layer. The lower layer is made of a same layer as the pixel electrode.

    摘要翻译: 一种薄膜晶体管阵列面板,包括形成在基板上的栅极驱动电路部分的基板,栅极线和栅极层信号传输线,形成在栅极线和栅极层信号传输线上的栅极绝缘层,以及 具有暴露栅极层信号传输线的一部分的第一接触孔,形成在栅极绝缘层上的半导体层,形成在栅极绝缘层和半导体层上的源电极和漏电极的数据线, 栅极驱动电路部分的数据层信号传输线,形成在栅极绝缘层上并通过第一接触孔连接到栅极层信号传输线,连接到漏极的像素电极和形成在漏电极上的钝化层 数据线,漏电极和数据层信号传输线。 数据线,漏电极和数据层信号传输线具有包括下层,中间层和上层的三层结构。 下层由与像素电极相同的层制成。

    THIN FILM TRANSISTOR ARRAY PANEL INCLUDING ASSISTANT LINES
    69.
    发明申请
    THIN FILM TRANSISTOR ARRAY PANEL INCLUDING ASSISTANT LINES 有权
    薄膜晶体管阵列包括辅助线

    公开(公告)号:US20100096635A1

    公开(公告)日:2010-04-22

    申请号:US12643960

    申请日:2009-12-21

    IPC分类号: H01L33/00

    摘要: Improved thin film transistor array panels are provided. In one embodiment, a panel includes a plurality of gate lines, data lines, and a plurality of switching elements connected to the gate lines and the data lines. An interlayer insulating layer is formed between the gate lines and the data lines. A passivation layer covering the gate lines, the data lines, and the switching elements is also provided having a plurality of first contact holes exposing portions of the data lines, wherein the switching elements and the pixel electrodes are connected through the first contact holes. A plurality of contact assistants are formed on the passivation layer and are connected to the data lines through a plurality of second contact holes in the passivation layer. A plurality of auxiliary lines are connected to the data lines through a plurality of third contact holes in the interlayer insulating layer.

    摘要翻译: 提供了改进的薄膜晶体管阵列面板。 在一个实施例中,面板包括连接到栅极线和数据线的多条栅极线,数据线和多个开关元件。 在栅极线和数据线之间形成层间绝缘层。 还提供了覆盖栅极线,数据线和开关元件的钝化层,其具有暴露数据线部分的多个第一接触孔,其中开关元件和像素电极通过第一接触孔连接。 多个接触助剂形成在钝化层上,并通过钝化层中的多个第二接触孔与数据线连接。 多条辅助线通过层间绝缘层中的多个第三接触孔连接到数据线。

    Reflection-transmission type liquid crystal display device and method for manufacturing the same
    70.
    发明授权
    Reflection-transmission type liquid crystal display device and method for manufacturing the same 失效
    反射透射型液晶显示装置及其制造方法

    公开(公告)号:US07652735B2

    公开(公告)日:2010-01-26

    申请号:US11841135

    申请日:2007-08-20

    申请人: Chun-Gi You

    发明人: Chun-Gi You

    IPC分类号: G02F1/1335 G02F1/1343

    摘要: Disclosed are a liquid crystal display (LCD) device and a method for manufacturing the LCD device. The LCD device has a substrate including a display region and a pad region located in a periphery of the display region, the display region having a transparent electrode, the pad region having a pad electrode. The transparent electrode and the pad electrode are formed from the same layer. A reflective electrode having a transmission window exposing a portion of the transparent electrode is formed on the transparent electrode. The manufacturing process can be simplified because the transparent electrode is directly connected to the reflective electrode. Since the pad electrode is formed of the same layer as the transparent electrode, no metal corrosion occurs to thereby increase the pad reliability during COG bonding.

    摘要翻译: 公开了一种液晶显示器(LCD)装置及其制造方法。 LCD装置具有包括显示区域和位于显示区域周边的焊盘区域的基板,显示区域具有透明电极,该焊盘区域具有焊盘电极。 透明电极和焊盘电极由相同的层形成。 在透明电极上形成具有透射透明电极的一部分的透射窗的反射电极。 由于透明电极直接连接到反射电极,所以可以简化制造工艺。 由于焊盘电极由与透明电极相同的层形成,所以不会发生金属腐蚀,从而在COG接合期间增加焊盘的可靠性。