摘要:
An organic light-emitting display device and a method of manufacturing the same. The organic light-emitting display device includes: a thin-film transistor including an active layer, a gate electrode comprising a first electrode and a second electrode on the first electrode, and source and drain electrodes; an organic light-emitting device including a pixel electrode electrically connected to the thin-film transistor and including nano-Ag, an intermediate layer comprising a light-emitting layer, and an opposite electrode covering the intermediate layer and facing the pixel electrode; and a pad electrode formed on the same plane as and formed of the same material as the first electrode in a pad area outside of a light-emitting area.
摘要:
An organic light-emitting display device includes a thin film transistor (TFT) including an active layer, a gate electrode comprising a first electrode and a second electrode, a source electrode, and a drain electrode, a photoresist layer on the source electrode and the drain electrode, a pixel electrode electrically coupled to the TFT, comprising a same material as the first electrode, and at a same layer as the first electrode, a pixel defining layer having a hole exposing the pixel electrode, the pixel defining layer covering the photoresist layer, an intermediate layer on the pixel electrode and comprising a light-emitting layer, and an opposite electrode covering the intermediate layer and facing the pixel electrode.
摘要:
A method of manufacturing a thin film transistor array panel is provided, which includes: forming a thin film transistor including a gate electrode, a drain electrode, a source electrode and a semiconductor on a substrate; forming a first passivation layer on the drain and the source electrodes; forming a transparent conductive layer on the first passivation layer; etching the transparent conductive layer using a photoresist as an etch mask to expose the portion of the first passivation layer and to form a pixel electrode connected the drain electrode; ashing the first passivation layer and the photoresist; and removing the photoresist.
摘要:
The display device according to an exemplary embodiment of the present invention includes an insulation substrate, a first signal line formed on the insulation substrate, a second signal line intersecting and insulated from the first signal line, an covering member formed on the second signal line, and a switching element having a first terminal, a second terminal, and a third terminal, wherein the first terminal is connected to the first signal line and the second terminal is connected to the second signal line, and a pixel electrode is connected to the third terminal of the switching element. The covering member according to an embodiment of the present invention reduces the etching error in forming a fine pattern.
摘要:
A thin film transistor TFT, including a substrate, a gate electrode on the substrate, a gate insulating layer on the gate electrode, an active layer on the gate insulating layer, the active layer corresponding to the gate electrode and including a channel region, source and drain electrodes contacting the active layer, the source and drain electrodes being separate from each other, and an ohmic contact layer between the active layer and at least one of the source and drain electrodes, the ohmic contact layer including an oxide semiconductor material.
摘要:
A thin film transistor array panel includes a substrate; a first gate line disposed on the substrate and including a gate electrode; a storage electrode disposed in a layer which is the same layer as a layer of the first gate line; a gate insulating layer disposed on the first gate line and the storage electrode; a semiconductor disposed on the gate insulating layer and including a channel portion; a data line disposed on the semiconductor and including a source electrode; a drain electrode disposed on the semiconductor and facing the source electrode; a passivation layer disposed on the gate insulating layer, the data line, and the drain electrode, the passivation layer including a contact hole which exposes a portion of the drain electrode; and a pixel electrode disposed on the passivation layer and electrically connected to the drain electrode through the contact hole, wherein the gate insulating layer and the passivation layer are interposed between the pixel electrode and the substrate except for a region corresponding to the contact hole, and wherein the pixel electrode overlaps the storage electrode via the gate insulating layer and the passivation layer.
摘要:
An organic light emitting device including a pixel area displaying images and a peripheral area that is a peripheral portion of the pixel area is disclosed. A manufacturing method of an organic light emitting device includes: forming a switching element of the pixel area; forming a peripheral signal line in the peripheral area; forming a passivation layer on the switching element and the peripheral signal line; forming an overcoat and a remaining layer on the passivation layer; forming a transflective member and a thickness control layer on the overcoat; removing the remaining layer; forming a pixel electrode on the transflective member and the thickness control layer; forming an organic light emitting member on the pixel electrode; and forming a common electrode on the organic light emitting member. The remaining layer is maintained in the peripheral area such that the etchant is prevented from penetrating into the peripheral signal line, thereby preventing the corrosion of the peripheral signal line.
摘要:
A thin film transistor array panel including a substrate, a gate line and a gate-layer signal transmitting line of a gate driving circuit portion formed on the substrate, a gate insulating layer formed on the gate line and the gate-layer signal transmitting line and having a first contact hole exposing a portion of the gate-layer signal transmitting line, a semiconductor layer formed on the gate insulating layer, a data line including a source electrode, and a drain electrode formed on the gate insulating layer and the semiconductor layer, a data-layer signal transmitting line of the gate driving circuit portion formed on the gate insulating layer and connected to the gate-layer signal transmitting line through the first contact hole, a pixel electrode connected to the drain electrode, and a passivation layer formed on the data line, the drain electrode, and the data-layer signal transmitting line of the driving circuit portion. The data line, the drain electrode, and the data-layer signal transmitting line have a triple-layered structure including a lower layer, an intermediate layer, and an upper layer. The lower layer is made of a same layer as the pixel electrode.
摘要:
Improved thin film transistor array panels are provided. In one embodiment, a panel includes a plurality of gate lines, data lines, and a plurality of switching elements connected to the gate lines and the data lines. An interlayer insulating layer is formed between the gate lines and the data lines. A passivation layer covering the gate lines, the data lines, and the switching elements is also provided having a plurality of first contact holes exposing portions of the data lines, wherein the switching elements and the pixel electrodes are connected through the first contact holes. A plurality of contact assistants are formed on the passivation layer and are connected to the data lines through a plurality of second contact holes in the passivation layer. A plurality of auxiliary lines are connected to the data lines through a plurality of third contact holes in the interlayer insulating layer.
摘要:
Disclosed are a liquid crystal display (LCD) device and a method for manufacturing the LCD device. The LCD device has a substrate including a display region and a pad region located in a periphery of the display region, the display region having a transparent electrode, the pad region having a pad electrode. The transparent electrode and the pad electrode are formed from the same layer. A reflective electrode having a transmission window exposing a portion of the transparent electrode is formed on the transparent electrode. The manufacturing process can be simplified because the transparent electrode is directly connected to the reflective electrode. Since the pad electrode is formed of the same layer as the transparent electrode, no metal corrosion occurs to thereby increase the pad reliability during COG bonding.