摘要:
Illuminance distribution measuring method and apparatus, in which the quantity of light on an area irradiated by a light beam emitted from a light source is detected by a combination of first and second detectors. The first detector is movable along the area to be irradiated and detects the quantity of irradiating light incident on the area to be irradiated while moving along the area irradiated. The second detector is fixedly secured at a predetermined position relative to the light source and the area to be irradiated and receives the light beam emitted from the light source to irradiate the area to be irradiated. On the basis of the outputs from the first and second detectors, the illuminance distribution on the area irradiated is accurately measured irrespective of any intensity changes of the light beam emitted from the light source.
摘要:
An imaging optical system including a first off-axis optical system for receiving light from an object disposed at a predetermined height from its optical axis and emitting the light; and a second off-axis optical system for receiving the light from said first optical system to form an image of the object at a predetermined height form its optical axis.
摘要:
An alignment system usable in a semiconductor device manufacturing exposure apparatus for superimposingly transferring a circuit pattern of a reticle onto each of patterns formed on individual portions of a semiconductor wafer, for sequentially aligning the individual portions of the wafer with respect to the reticle by use of alignment marks formed in or on scribe lines defined between the individual portions of the wafer. An optical system for detecting the alignment marks is disposed outside the path of light used for the sake of pattern transfer. In the course of movement of the wafer for bringing a particular shot area to an exposure station, the alignment marks for the particular shot area are photoelectrically detected through the mark detecting optical system and, on the basis of the detection of the alignment marks, the reticle and the wafer are relatively moved into alignment such that, when the particular shot area reaches the exposure station, the pattern of the reticle can be accurately superimposed on the pattern already formed on the particular shot area of the wafer. As a result, TTL (through-the-lens) alignment is assured without degradation of throughput of the exposure apparatus.
摘要:
An exposure apparatus having a single light source and a plurality of exposure stages for carrying thereon wafers, respectively. The light emitting from the light source is directed to a plurality of masks simultaneously or sequentially, so that the patterns of the masks are simultaneously or sequentially transferred onto the wafers, respectively, carried on the exposure stages. In a preferred form, the light source comprises an excimer laser providing a pulsed laser beam.
摘要:
An exposure apparatus includes a reticle provided with at least one mark, and operates on a wafer provided with at least one mark. The apparatus further includes a projection optical system for optically conjugately relating the reticle to the wafer, a mark detecting apparatus for detecting the mark of the reticle and detecting the mark of the wafer through the projection optical system, an illuminator for illuminating the wafer with a sensitizing light, and a phase converting element fixed between the wafer and the reticle for varying the direction of polarization of a light coming from the mark provided on the wafer.
摘要:
An exposure method comprising the steps of forming onto a mask that arranges a pattern of a contact hole and a plurality of patterns each being smaller than the contact hole pattern, and illuminating the mask using plural kinds of light so as to resolve the desired pattern without the smaller patterns on a target via a projection optical system.
摘要:
A mask arranges a predetermined pattern and an auxiliary pattern smaller than the predetermined pattern so that where a virtual lattice is assumed which has a lattice point located at a center of the predetermined pattern, a center of the auxiliary pattern is offset from the lattice point of the virtual lattice.
摘要:
An exposure method that transfers a pattern formed on a mask onto an object to be exposed via a projection optical system that is at least partly immersed in liquid. The exposure method forms on a pupil of the projection optical system an effective light source that emits, from an axis orthogonal to an optical axis of the projection optical system, light that has an incident angle θ upon the object, wherein the light includes only s-polarized light in an area of an incident angle θ that satisfies 90°−θNA≦θ≦θNA, where θNA is the largest value of the incident angle θ.
摘要:
An exposure method immerses, in liquid, a surface of an object to be exposed, and a surface of a projection optical system closest to the object, and projects a repetitive pattern formed on a mask via the projection optical system onto the object. The exposure method forms on a pupil of the projection optical system an effective light source that emits, from an axis orthogonal to an optical axis of the projection optical system, light that is parallel to a repetitive direction of the repetitive pattern and has an incident angle θ upon the object, wherein the light includes only s-polarized light in an area of an incident angle θ that satisfies 90°−θNA≦θ≦θNA, where θNA is the largest value of the incident angle θ.
摘要:
In a projection exposure apparatus for illuminating a reticle with light from an illumination optical system and projecting a pattern of the reticle onto a substrate through a projection optical system. The illumination optical system includes a first optical element for switching a light distribution at a position optically conjugate with the pupil plane of the projection optical system, a second optical element for making the light uniform at the position optically conjugate with the an image plane of the projection optical system, and a third optical element for adjusting a non-uniformity of exposure resulting from switching the light distribution using the first optical element.