公开(公告)号：US08611140B2

公开(公告)日：2013-12-17

申请号：US13239162

申请日：2011-09-21

Applicant: Mourad El Baraji ,  Neal Berger

Inventor： Mourad El Baraji ,  Neal Berger

IPC: G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/5607 ,  H01L27/228

Abstract: A memory device includes: (1) multiple magnetic random access memory (“MRAM”) cells each including a first end and a second end; (2) a bit line electrically coupled to the first end of at least one of the MRAM cells; and (3) a strap electrically coupled to the second end of each one of the MRAM cells. During a write operation, the bit line is configured to apply a first heating current, and the strap is configured to apply a second heating current, such that at least one of the MRAM cells is heated to at least a threshold temperature according to the first heating current and the second heating current.

Abstract translation: 存储器件包括：（1）多个磁性随机存取存储器（“MRAM”）单元，每个单元包括第一端和第二端; （2）与MRAM单元中的至少一个的第一端电耦合的位线; 和（3）电耦合到每个MRAM单元的第二端的带子。 在写操作期间，位线被配置为施加第一加热电流，并且带被配置为施加第二加热电流，使得至少一个MRAM单元根据第一加热电流被加热到至少阈值温度 加热电流和第二加热电流。

公开(公告)号：US20130326612A1

公开(公告)日：2013-12-05

申请号：US13488340

申请日：2012-06-04

Applicant: David Naccache

Inventor： David Naccache

IPC: G06F21/00

CPC classification number: G06F21/554 ,  G06F21/552

Abstract: A computer implemented method includes collecting logged operations associated with a computation resource. Permitted operations for the computation resource are inferred based at least in part on the logged operations. A computation resource is augmented to block all operations that can be performed by the computation resource except the permitted operations.

Abstract translation: 计算机实现的方法包括收集与计算资源相关联的记录操作。 至少部分地基于记录的操作来推断计算资源的允许操作。 增加计算资源以阻止除了允许的操作之外的计算资源可执行的所有操作。

公开(公告)号：US08488372B2

公开(公告)日：2013-07-16

申请号：US13158316

申请日：2011-06-10

Applicant: Mourad El Baraji ,  Neal Berger

Inventor： Mourad El Baraji ,  Neal Berger

IPC: G11C11/00

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607

Abstract: A magnetic random access memory (MRAM) cell includes a storage layer, a sense layer, and a spacer layer between the storage layer and the sense layer. A field line is magnetically coupled to the MRAM cell to induce a magnetic field along a magnetic field axis, and at least one of the storage layer and the sense layer has a magnetic anisotropy axis that is tilted relative to the magnetic field axis. During a write operation, a storage magnetization direction is switchable between m directions to store data corresponding to one of m logic states, with m>2, where at least one of the m directions is aligned relative to the magnetic anisotropy axis, and at least another one of the m directions is aligned relative to the magnetic field axis. During a read operation, a sense magnetization direction is varied, relative to the storage magnetization direction, to determine the data stored by the storage layer.

Abstract translation: 磁性随机存取存储器（MRAM）单元包括在存储层和感测层之间的存储层，感测层和间隔层。 磁场线磁耦合到MRAM单元以沿着磁场轴诱导磁场，并且存储层和感测层中的至少一个具有相对于磁场轴线倾斜的磁各向异性轴。 在写入操作期间，可以在m个方向之间切换存储​​磁化方向以存储对应于m个逻辑状态之一的数据，其中m> 2，其中至少一个m个方向相对于磁各向异性轴对准，并且至少 m个方向中的另一个相对于磁场轴线对准。 在读取操作期间，感测磁化方向相对于存储磁化方向变化，以确定由存储层存储的数据。

公开(公告)号：US08467234B2

公开(公告)日：2013-06-18

申请号：US13023442

申请日：2011-02-08

Applicant: Neal Berger ,  Mourad El Baraji

Inventor： Neal Berger ,  Mourad El Baraji

IPC: G11C11/00

CPC classification number: G11C11/5607 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: A magnetic random access memory cell includes a sense layer, a storage layer, and a spacer layer disposed between the sense layer and the storage layer. During a write operation, the storage layer has a magnetization direction that is switchable between m directions to store data corresponding to one of m logic states, with m>2. During a read operation, the sense layer has a magnetization direction that is varied, relative to the magnetization direction of the storage layer, to determine the data stored by the storage layer.

Abstract translation: 磁性随机存取存储单元包括感测层，存储层和设置在感测层和存储层之间的间隔层。 在写入操作期间，存储层具有可在m个方向之间切换的磁化方向，以存储对应于m个逻辑状态之一的数据，其中m> 2。 在读取操作期间，感测层具有相对于存储层的磁化方向变化的磁化方向，以确定由存储层存储的数据。

公开(公告)号：US20130037898A1

公开(公告)日：2013-02-14

申请号：US13572566

申请日：2012-08-10

Applicant: Bertrand F. Cambou ,  Douglas J. Lee ,  Anthony J. Tether ,  Barry Hoberman

Inventor： Bertrand F. Cambou ,  Douglas J. Lee ,  Anthony J. Tether ,  Barry Hoberman

IPC: H01L27/22

CPC classification number: H01L27/228 ,  G11C5/063 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607

Abstract: A memory device includes a first plurality of magnetic random access memory (MRAM) cells positioned along a first direction, and a first bit line electrically connected to the first plurality of MRAM cells, the bit line oriented in the first direction. The device includes a first plurality of field lines oriented in a second direction different from the first direction, the first plurality of field lines being spaced such that only a corresponding first one of the first plurality of MRAM cells is configurable by each of the first plurality of field lines. The device includes a second plurality of field lines oriented in a third direction different from the first direction and the second direction, the second plurality of field lines being spaced such that only a corresponding second one of the first plurality of MRAM cells is configurable by each of the second plurality of field lines.

Abstract translation: 存储器件包括沿着第一方向定位的第一多个磁性随机存取存储器（MRAM）单元，以及电连接到第一多个MRAM单元的第一位线，该位线沿第一方向定向。 所述装置包括沿与第一方向不同的第二方向定向的第一多个场线，所述第一多个场线间隔开，使得仅第一多个MRAM单元中的对应的第一个MRAM单元可由第一多个MRAM单元中的每一个配置 的现场线。 该装置包括在与第一方向和第二方向不同的第三方向上定向的第二多个场线，第二多个场线间隔开，使得仅第一多个MRAM单元中相应的第二个MRAM单元可由每个 的第二多个场线。

公开(公告)号：US20120314488A1

公开(公告)日：2012-12-13

申请号：US13158316

申请日：2011-06-10

Applicant: Mourad El Baraji ,  Neal Berger

Inventor： Mourad El Baraji ,  Neal Berger

IPC: G11C11/00

CPC classification number: G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/5607

Abstract: A magnetic random access memory (MRAM) cell includes a storage layer, a sense layer, and a spacer layer between the storage layer and the sense layer. A field line is magnetically coupled to the MRAM cell to induce a magnetic field along a magnetic field axis, and at least one of the storage layer and the sense layer has a magnetic anisotropy axis that is tilted relative to the magnetic field axis. During a write operation, a storage magnetization direction is switchable between m directions to store data corresponding to one of m logic states, with m>2, where at least one of the m directions is aligned relative to the magnetic anisotropy axis, and at least another one of the m directions is aligned relative to the magnetic field axis. During a read operation, a sense magnetization direction is varied, relative to the storage magnetization direction, to determine the data stored by the storage layer.

Abstract translation: 磁性随机存取存储器（MRAM）单元包括在存储层和感测层之间的存储层，感测层和间隔层。 磁场线磁耦合到MRAM单元以沿着磁场轴诱导磁场，并且存储层和感测层中的至少一个具有相对于磁场轴线倾斜的磁各向异性轴。 在写入操作期间，可以在m个方向之间切换存储​​磁化方向以存储对应于m个逻辑状态之一的数据，其中m> 2，其中至少一个m个方向相对于磁各向异性轴对准，并且至少 m个方向中的另一个相对于磁场轴线对准。 在读取操作期间，感测磁化方向相对于存储磁化方向变化，以确定由存储层存储的数据。

公开(公告)号：US08261367B2

公开(公告)日：2012-09-04

申请号：US12708874

申请日：2010-02-19

Applicant: Kars-Michiel Hubert Lenssen ,  Robert Jochemsen

Inventor： Kars-Michiel Hubert Lenssen ,  Robert Jochemsen

IPC: G06F11/30 ,  G06F12/14 ,  G11C19/08 ,  G11C15/02 ,  G11C11/06 ,  G11C11/00

CPC classification number: H01L23/57 ,  G06F21/79 ,  G06K19/07372 ,  G11C8/20 ,  G11C11/1695 ,  H01L2924/0002 ,  Y10S257/922 ,  H01L2924/00

Abstract: Data, stored in MRAM-cells should be protected against misuse or read-out by unauthorized persons. The present invention provides an array of MRAM-cells provided with a security device for destroying data stored in the MRAM-cells when they are tampered with. This is achieved by placing a permanent magnet adjacent the MRAM-array in combination with a soft-magnetic flux-closing layer. As long as the soft-magnetic layer is present, the magnetic field lines from the permanent magnet are deviated and flow through this soft-magnetic layer. When somebody is tampering with the MRAM-array, e.g. by means of reverse engineering, and the flux-closing layer is removed, the flux is no longer deviated and affects the nearby MRAM-array, thus destroying the data stored in the MRAM-cells.

Abstract translation: 存储在MRAM单元中的数据应受到保护，防止未经授权的人员误用或读取。 本发明提供了一种具有安全装置的MRAM单元的阵列，用于当它们被篡改时，用于销毁存储在MRAM单元中的数据。 这通过将MRAM阵列相邻的永磁体与软磁通量闭合层组合来实现。 只要存在软磁性层，来自永磁体的磁场线就会偏离并流过该软磁层。 当某人篡改MRAM阵列时，例如 通过逆向工程，除去磁通密闭层，磁通不会偏离，影响附近的MRAM阵列，从而破坏存储在MRAM单元中的数据。