公开(公告)号：US06934444B2

公开(公告)日：2005-08-23

申请号：US10720372

申请日：2003-11-24

申请人： Margaret Ghiron ,  Prakash Gothoskar ,  Robert Keith Montgomery ,  Vipulkumar Patel ,  Soham Pathak ,  Kalpendu Shastri ,  Katherine A. Yanushefski

发明人： Margaret Ghiron ,  Prakash Gothoskar ,  Robert Keith Montgomery ,  Vipulkumar Patel ,  Soham Pathak ,  Kalpendu Shastri ,  Katherine A. Yanushefski

IPC分类号： G02B6/34 ,  G02B6/42

CPC分类号： G02B6/425 ,  G02B6/34 ,  G02B6/4226

摘要： A practical realization for achieving and maintaining high-efficiency transfer of light from input and output free-space optics to a high-index waveguide of sub-micron thickness is described. The required optical elements and methods of fabricating, aligning, and assembling these elements are discussed. Maintaining high coupling efficiency reliably over realistic ranges of device operating parameters is discussed in the context of the preferred embodiments.

摘要翻译： 描述了实现和保持从输入和输出自由空间光学器件到亚微米厚度的高折射率波导的高效率传输的实际实现。 讨论了所需的光学元件和制造，对准和组装这些元件的方法。 在优选实施例的上下文中讨论在设备操作参数的实际范围内可靠地维持高耦合效率。

公开(公告)号：US06917730B2

公开(公告)日：2005-07-12

申请号：US10833642

申请日：2004-04-28

申请人： Margaret Ghiron ,  Prakash Gothoskar ,  Robert Keith Montgomery ,  Vipulkumar Patel ,  Soham Pathak ,  Kalpendu Shastri ,  Katherine A. Yanushefski

发明人： Margaret Ghiron ,  Prakash Gothoskar ,  Robert Keith Montgomery ,  Vipulkumar Patel ,  Soham Pathak ,  Kalpendu Shastri ,  Katherine A. Yanushefski

IPC分类号： G02B6/12 ,  G02B6/34 ,  G02B6/42 ,  G02B26/08

CPC分类号： G02B6/12 ,  G02B6/34 ,  G02B6/4206 ,  G02B26/0833

摘要： An optical coupling system for use with multiple wavelength optical signals provides improved coupling efficiency between a free-space optical beam and a relatively thin, surface layer of an SOI structure (“SOI layer”), allowing for sufficient coupling efficiency (greater than 50%) over a predetermined wavelength range. An evanescent coupling layer, disposed between a coupling prism and an SOI layer, is particularly configured to improve the coupling efficiency. In one embodiment, the thickness of the evanescent layer is reduced below an optimum value for a single wavelength, the reduced thickness improving coupling efficiency over a predetermined wavelength range around a defined center wavelength. Alternatively, a tapered thickness evanescent coupling layer may be used to improve coupling efficiency (or a combination of reduced thickness and tapered configuration). Optical beam steering can be combined with a modified evanescent coupling layer to control the input beam launch angle and further improve coupling efficiency.

摘要翻译： 用于多波长光信号的光耦合系统提供了自由空间光束与SOI结构（“SOI层”）相对薄的表面层之间的耦合效率的提高，从而允许足够的耦合效率（大于50％ ）在预定波长范围内。 设置在耦合棱镜和SOI层之间的渐逝耦合层特别地被配置成提高耦合效率。 在一个实施例中，消逝层的厚度降低到单个波长的最佳值以下，减小的厚度提高了围绕规定的中心波长的预定波长范围的耦合效率。 或者，可以使用锥形的厚度渐逝耦合层来提高耦合效率（或减小厚度和锥形配置的组合）。 光束转向可以与修改的渐逝耦合层组合，以控制输入光束的发射角度，进一步提高耦合效率。

公开(公告)号：US20050110108A1

公开(公告)日：2005-05-26

申请号：US10990725

申请日：2004-11-17

申请人： Vipulkumar Patel ,  Margaret Ghiron ,  Prakash Gothoskar ,  Robert Montgomery ,  Soham Pathak ,  David Piede ,  Kalpendu Shastri ,  Katherine Yanushefski

发明人： Vipulkumar Patel ,  Margaret Ghiron ,  Prakash Gothoskar ,  Robert Montgomery ,  Soham Pathak ,  David Piede ,  Kalpendu Shastri ,  Katherine Yanushefski

IPC分类号： G02B6/12 ,  G02B6/122 ,  H01L31/00 ,  H01L31/0224 ,  H01L31/0232 ,  H01L31/0392 ,  H01L31/108 ,  H01L31/153

CPC分类号： H01L31/108 ,  G02B6/12004 ,  G02B6/1228 ,  H01L31/022408 ,  H01L31/0232 ,  H01L31/03921 ,  H01L31/153 ,  Y02E10/50

摘要： A silicon-based IR photodetector is formed within a silicon-on-insulator (SOI) structure by placing a metallic strip (preferably, a silicide) over a portion of an optical waveguide formed within a planar silicon surface layer (i.e., “planar SOI layer”) of the SOI structure, the planar SOI layer comprising a thickness of less than one micron. Room temperature operation of the photodetector is accomplished as a result of the relatively low dark current associated with the SOI-based structure and the ability to use a relatively small surface area silicide strip to collect the photocurrent. The planar SOI layer may be doped, and the geometry of the silicide strip may be modified, as desired, to achieve improved results over prior art silicon-based photodetectors.

摘要翻译： 通过将金属条（优选硅化物）放置在形成在平面硅表面层内的光波导的一部分（即，“平面SOI”）上，在绝缘体上硅（SOI）结构中形成硅基红外光电检测器 层“），平面SOI层包括小于1微米的厚度。 由于与基于SOI的结构相关联的相对较低的暗电流和使用相对小的表面积硅化物带收集光电流的能力，光电检测器的室温操作是完成的。 可以掺杂平面SOI层，并且根据需要可以修改硅化物带的几何形状，以实现相对于现有技术的硅基光电探测器的改进的结果。