Electron beam measurement method and electron beam irradiation processing device
    61.
    发明授权
    Electron beam measurement method and electron beam irradiation processing device 有权
    电子束测量方法和电子束照射处理装置

    公开(公告)号:US06657212B2

    公开(公告)日:2003-12-02

    申请号:US09725270

    申请日:2000-11-29

    CPC classification number: G01R19/0061 H01J7/44 H01J33/00

    Abstract: An electron beam irradiation processing device including an electron beam tube and a current detection unit disposed outside of the window of the electron beam tube. The electron beam tube is adapted to radiate electron beams and has a window and an associated power-source unit that provides a power source. The current detection unit includes at least one of a conductor and a semiconductor covered by an insulating film, and an electron beam level measurement unit having a current measurement unit that measures the current flowing through the current detection unit. The amount of electron beams output from the electron beam tube is controlled by controlling the power-source unit as a function of the current flowing through the current detection unit. In addition, a method of measuring amount of electron beams radiated from an electron beam tube with a window including the steps of providing a current detection unit and measuring amount of electron beams radiated from the electron beam tube by measuring the current flowing through the current detection unit.

    Abstract translation: 一种电子束照射处理装置,包括设置在电子束管的窗口外的电子束管和电流检测单元。 电子束管适于辐射电子束,并具有提供电源的窗口和相关联的电源单元。 电流检测单元包括由绝缘膜覆盖的导体和半导体中的至少一个,以及电子束电平测量单元,其具有测量流过电流检测单元的电流的电流测量单元。 通过控制电源单元作为流过电流检测单元的电流的函数来控制从电子束管输出的电子束的量。 另外,测量从具有窗口的电子束管辐射的电子束量的方法,包括以下步骤:通过测量流过电流检测的电流来提供电流检测单元和测量从电子束管辐射的电子束的量 单元。

    Lithographic projection apparatus
    62.
    发明授权
    Lithographic projection apparatus 有权
    平版印刷设备

    公开(公告)号:US06646274B1

    公开(公告)日:2003-11-11

    申请号:US09505188

    申请日:2000-02-16

    Inventor: Arno J. Bleeker

    Abstract: A lithographic projection device according to the present invention includes a first radiation source which supplies a projection beam of radiation of a first type, a mask table for holding a mask, a substrate table for holding a substrate and a projection system for imaging a portion of the mask, irradiated by the projection beam, onto a target portion of the substrate. Further, a second radiation source supplies a second beam of radiation of a second type which can be directed onto the substrate and a controller which patterns the second beam of radiation so that it impinges on the substrate in a particular pattern. The two radiation beams are controlled such that the sum of the fluxes of the radiation of the first and second type on the substrate causes an elevation of the substrate temperature which is substantially constant across at least a given area of the substrate.

    Abstract translation: 根据本发明的光刻投影装置包括:第一辐射源,其提供第一类型的投影射束;用于保持掩模的掩模台;用于保持基板的基板台;以及投影系统, 由投影光束照射的掩模到基板的目标部分上。 此外,第二辐射源提供可被引导到衬底上的第二类型的第二辐射束,以及控制器,其将第二辐射束图案化,使得其以特定图案撞击在衬底上。 控制两个辐射束,使得第一和第二类型的辐射的通量在衬底上的总和导致在衬底的至少给定面积上基本恒定的衬底温度的升高。

    Scanning electron microscope with voltage applied to the sample
    63.
    发明授权
    Scanning electron microscope with voltage applied to the sample 有权
    扫描电子显微镜,电压施加到样品

    公开(公告)号:US06635873B1

    公开(公告)日:2003-10-21

    申请号:US09477060

    申请日:2000-01-03

    Abstract: A scanning electron microscope scans a sample using an accelerated electron beam, detects secondary electrons generated from the sample or reflected electrons or both of them, and forms images. After radiating the sample with the electron beam at a first acceleration voltage so as to charge the surface of the sample, where the electron beam is radiated at a predetermined potential, images are observed by scanning the charged sample surface at a second acceleration voltage different from the first acceleration voltage.

    Abstract translation: 扫描电子显微镜使用加速电子束扫描样品,检测从样品产生的二次电子或反射的电子,或者二者形成图像。 在第一加速电压下用电子束照射样品以对电子束以预定电位辐射的样品的表面进行充电,通过以不同于第一加速电压的第二加速电压扫描带电样品表面来观察图像 第一加速电压。

    Process and device for treatment by dielectric barrier discharge lamps
    64.
    发明授权
    Process and device for treatment by dielectric barrier discharge lamps 有权
    介质阻挡放电灯处理工艺及装置

    公开(公告)号:US06624428B2

    公开(公告)日:2003-09-23

    申请号:US10292630

    申请日:2002-11-13

    CPC classification number: H05B3/0052 B01J19/123 C23C16/482

    Abstract: To advantageously eliminate the disadvantage of attenuation of the radiant light from dielectric barrier discharge lamps by a UV transmission component, a treatment device using dielectric barrier discharge lamps is provided with a lamp chamber in which dielectric barrier discharge lamps are located and in which there is an inert gas atmosphere; a treatment chamber, in which an article to be treated is located, is provided with a treatment gas atmosphere, and a UV transmission component by which the lamp chamber and the treatment chamber are separated from one another. In each of the lamp chamber and the treatment chamber there are devices for determining the gas pressure within the respective chamber, a supply arrangement for delivering gas to the inside the respective chamber and an arrangement for discharging gas from the respective chamber. A control device regulates the pressure of the gas atmosphere within the lamp chamber and the pressure of the gas atmosphere of the treatment chamber relative to one another by determining the gas pressures of the lamp chamber and the treatment chamber.

    Abstract translation: 为了有利地消除通过UV透射部件衰减来自电介质阻挡放电灯的辐射光的缺点,使用介质阻挡放电灯的处理装置设置有灯室,其中介质阻挡放电灯位于其中,其中存在 惰性气体气氛; 在处理室中设置待处理物品,处理气体气氛和灯室与处理室相互分离的UV透射部件。 在灯室和处理室的每一个中,存在用于确定相应室内的气体压力的装置,用于将气体输送到相应室的内部的供应装置和用于从相应室排出气体的装置。 控制装置通过确定灯室和处理室的气体压力来调节灯室内的气体气氛的压力和处理室的气体气氛的压力。

    Multiple local probe measuring device and method
    66.
    发明授权
    Multiple local probe measuring device and method 有权
    多个本地探头测量装置及方法

    公开(公告)号:US06583411B1

    公开(公告)日:2003-06-24

    申请号:US09660885

    申请日:2000-09-13

    CPC classification number: G01Q40/00 G01Q70/06 Y10S977/874

    Abstract: The invention provides a local probe measuring device for effecting local measurements refering to a sample, comprising a plurality of local probes for local measurements with respect to a sample or a reference surface, a measurement condition adjustment arrangement adapted to commonly adjust measurement conditions of said local probes with respect to the sample or the reference surface, a plurality of detection arrangements, each being associated or adapted to be associated to one particular of said local probes and adapted to independently detect measurement data refering to local measurements effected by said particular local probe. Further, methods for effecting local measurements and local manipulations by means of multiple local probes are provided.

    Abstract translation: 本发明提供了一种本地探针测量装置,用于进行参考样品的局部测量,该样品包括用于相对于样品或参考表面进行局部测量的多个局部探针,适于共同调节所述局部的测量条件的测量条件调节装置 相对于样本或参考表面的探针,多个检测装置,每个检测装置相关联或适于与所述局部探针中的一个特定的相关联,并适于独立地检测参考由所述特定局部探针实施的局部测量的测量数据。 此外,提供了通过多个本地探针实现局部测量和局部操纵的方法。

    Ion implanting apparatus
    67.
    发明授权
    Ion implanting apparatus 失效
    离子注入装置

    公开(公告)号:US06555831B1

    公开(公告)日:2003-04-29

    申请号:US09559728

    申请日:2000-04-28

    CPC classification number: H01J37/3171 H01J37/304 H01J2237/0822

    Abstract: An ion implanting apparatus is provided with a control apparatus 22 for controlling the filament current passing to the respective filaments 6 in accordance with the beam current IB measured by a plurality of beam current measuring instruments 18. The control apparatus 22 performs, at least once respectively, {circle around (1)} the current value control routine which calculates average values of all beam current measured by the beam current measuring instruments 18, and increases and decreases the respective filament current IF such that the average value comes near to the set value, and {circle around (2)} the uniformity control routine which groups the beam current measuring instruments 17 into the number of the filaments, seeks for a maximum value and the minimum value from all the measured values of the beam current IB, decides groups to which the maximum value and the minimum value belong, decreases the filament current IF passing to the filaments 6 corresponding to the maximum value, and increases the filament current IF passing to the filaments 6 corresponding to the minimum value.

    Abstract translation: 离子注入装置设置有控制装置22,用于根据由多个射束电流测量仪器18测量的射束电流IB来控制通过各细丝6的细丝电流。控制装置22至少分别执行一次 ,{圆周(1)计算由束电流测量仪18测量的所有束电流的平均值的当前值控制程序,并使各灯丝电流IF增加和减小使得平均值接近设定值,以及 {圆周(2)将束电流测量仪器17组合成长丝数的均匀性控制程序寻求最大值,并从束电流IB的全部测量值求最小值,决定最大值 值和最小值属于的情况,减少对应于最大值的细丝6的细丝电流IF ,并且增加对应于最小值的细丝6的细丝电流IF。

    Apparatus and method for examining specimen with a charged particle beam
    68.
    发明授权
    Apparatus and method for examining specimen with a charged particle beam 有权
    用带电粒子束检查样本的装置和方法

    公开(公告)号:US06555815B2

    公开(公告)日:2003-04-29

    申请号:US09342802

    申请日:1999-06-29

    Abstract: An apparatus for examining a specimen with a beam of charged particles, where charging of the specimen is avoided or reduced by injecting inert gas onto the sample's surface. In order to avoid interactions with the electron optics, various embodiments are disclosed for providing a rotationally symmetrical nozzles and/or electrodes. Additionally, embodiments are disclosed wherein a plurality of gas conduits are arranged in a rotationally symmetrical manner. Alternatively, the conduit is incorporated into an element of the electron optics, such as the magnetic lens. Also, in order to reduce or eliminate interaction of the electrons with the gas molecules, embodiments are disclosed wherein the gas is pulsated, rather than continually injected.

    Abstract translation: 一种用带电粒子束检查样本的装置,其中通过将惰性气体注射到样品表面上来避免或减少样品的充电。 为了避免与电子光学器件的相互作用,公开了用于提供旋转对称的喷嘴和/或电极的各种实施例。 另外,公开了其中多个气体管道以旋转对称的方式布置的实施例。 或者,导管结合到电子光学元件的元件中,例如磁性透镜。 此外,为了减少或消除电子与气体分子的相互作用,公开了其中气体被脉动而不是连续喷射的实施例。

    Charged-particle-beam microlithography apparatus, reticles, and methods for reducing proximity effects, and device-manufacturing methods comprising same
    69.
    发明授权
    Charged-particle-beam microlithography apparatus, reticles, and methods for reducing proximity effects, and device-manufacturing methods comprising same 失效
    带电粒子束微光刻设备,掩模版和用于降低邻近效应的方法,以及包括它们的器件制造方法

    公开(公告)号:US06528806B1

    公开(公告)日:2003-03-04

    申请号:US09536825

    申请日:2000-03-27

    CPC classification number: H01J37/3045 H01J2237/3175

    Abstract: Apparatus and methods are disclosed for reducing proximity effects in pattern elements as defined on a reticle and projected onto a wafer or other substrate. Especially reduced are proximity effects arising from pattern elements (located inside a pattern or chip field on the substrate) and an alignment mark (located outside a pattern or chip field on the substrate). To control these proximity effects, the distance between the alignment mark, as projected onto the substrate, and nearest pattern elements is controlled. Desirably, the alignment mark(s) are regarded as part of the overall pattern as projected, thereby allowing any of various proximity-effect-reducing techniques to be applied. For example, the substrate can be exposed with a patterning beam and a corrective beam. The corrective beam serves to “sensitize” the substrate and can be exposed not only within the chip field but also in perimeter zones located just outside the chip field on the substrate.

    Abstract translation: 公开了用于减少如在掩模版上限定并投影到晶片或其它基底上的图案元件中的接近效应的装置和方法。 特别地减少了由图案元素(位于衬底上的图案或芯片场内)和对准标记(位于衬底上的图案或芯片场之外)产生的邻近效应。 为了控制这些邻近效应,控制对准标记之间的距离,如投影到基底上,以及最近的图案元素之间的距离。 期望地,将对准标记视为投影的整体图案的一部分,从而允许应用各种接近效应减少技术中的任何一种。 例如,衬底可以用图案化光束和校正光束曝光。 校正光束用于“使感光”衬底,并且可以不仅在芯片场内而且暴露在位于衬底上的芯片场外的周边区域中。

    Astigmatism-correction device and charged-particle-beam microlithography apparatus and methods comprising same
    70.
    发明授权
    Astigmatism-correction device and charged-particle-beam microlithography apparatus and methods comprising same 失效
    散光校正装置和带电粒子束微光刻设备及其方法

    公开(公告)号:US06489620B1

    公开(公告)日:2002-12-03

    申请号:US09575215

    申请日:2000-05-18

    Applicant: Koichi Kamijo

    Inventor: Koichi Kamijo

    Abstract: Astigmatism-correction devices are disclosed for use in a charged-particle-beam (CPB) microlithography apparatus and methods and that do not produce higher-order aberrations when correcting deflection aberrations. The CPB microlithography apparatus includes a projection-optical system that includes first and second projection lenses and associated deflectors. The astigmatism-correction device can include a first coil array associated with the first projection lens upstream of an aperture, and a second astigmatism-correction device associated with the second projection lens downstream of the aperture. In each coil array, the nominal half-angle of the constituent coils is 30°. With such a configuration, higher-order aberrations that otherwise would be produced by the deflectors are reduced nearly to zero, making it possible to use large electrical currents in the deflectors. Specifically, deflection-astigmatism aberrations and hybrid deflection-astigmatic distortions otherwise produced by the deflectors are eliminated.

    Abstract translation: 公开了用于带电粒子束(CPB)微光刻设备和方法并且在校正偏转像差时不产生高阶像差的散光校正装置。 CPB微光刻设备包括投影光学系统,其包括第一和第二投影透镜及相关联的偏转器。 像散校正装置可以包括与孔的上游的第一投影透镜相关联的第一线圈阵列和与孔的下游的第二投影透镜相关联的第二像散校正装置。 在每个线圈阵列中,组成线圈的标称半角为30°。 利用这种结构,由偏转器产生的较高阶像差将几乎减小到零,使得可以在偏转器中使用大的电流。 具体地,消除了由偏转器产生的偏转像散像差和混合偏转像散畸变。

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