公开(公告)号：US20180337020A1

公开(公告)日：2018-11-22

申请号：US15778002

申请日：2016-12-23

Applicant: ENTEGRIS, Inc.

Inventor： Steven E. Bishop

IPC: H01J37/317

CPC classification number: H01J37/3171 ,  H01J37/02 ,  H01J2237/0041 ,  H01J2237/0044 ,  H01J2237/006 ,  H01J2237/022 ,  H01J2237/06366

Abstract: A gas supply assembly is described for delivery of gas to a plasma flood gun. The gas supply assembly includes: a fluid supply package configured to deliver inert gas to a plasma flood gun for generating inert gas plasma including electrons for modulating surface charge of a substrate in ion implantation operation; and cleaning gas in the inert gas fluid supply package in mixture with the inert gas, or in a separate cleaning gas supply package configured to deliver cleaning gas to the plasma flood gun concurrently or sequentially with respect to delivery of inert gas to the plasma flood gun. A method of operating a plasma flood gun is also described, in which cleaning gas is introduced to the plasma flood gun, intermittently, continuously, or sequentially in relation to flow of inert gas to the plasma flood gun. The cleaning gas is effective to generate volatile reaction product gases from material deposits in the plasma flood gun, and to effect re-metallization of a plasma generation filament in the plasma flood gun.

公开(公告)号：US10056228B2

公开(公告)日：2018-08-21

申请号：US14446146

申请日：2014-07-29

Applicant: Applied Materials Israel, Ltd.

Inventor： Gilad Erel ,  Michal Avinun-Kalish ,  Stefan Lanio

IPC: H01J37/08 ,  H01J37/28 ,  H01J37/00 ,  H01J37/02

CPC classification number: H01J37/28 ,  H01J37/026 ,  H01J2237/0044 ,  H01J2237/0048

Abstract: A charged particle beam specimen inspection system is described. The system includes an emitter for emitting at least one charged particle beam, a specimen support table configured for supporting the specimen, an objective lens for focusing the at least one charged particle beam, a charge control electrode provided between the objective lens and the specimen support table, wherein the charge control electrode has at least one aperture opening for the at least one charged particle beam, and a flood gun configured to emit further charged particles for charging of the specimen, wherein the charge control electrode has a flood gun aperture opening.

公开(公告)号：US20170200627A1

公开(公告)日：2017-07-13

申请号：US14995088

申请日：2016-01-13

Applicant: Applied Materials Israel, Ltd.

Inventor： Tuvia Biber ,  Efim Kerner ,  Efraim Siman Tov

IPC: H01L21/683 ,  H01L21/66 ,  H01L21/326

CPC classification number: H01L21/6833 ,  H01J2237/0044 ,  H01J2237/20 ,  H01L21/326 ,  H01L21/67288 ,  H01L21/6831 ,  H01L22/14 ,  H01L22/26 ,  H05F3/00

Abstract: A system for zapping a wafer, the system includes a pulse generator; a sensor; a first conductive interface; a second conductive interface; a controller; wherein the pulse generator is configured to generate zapping pulses; wherein the first conductive interface is configured to provide the zapping pulses to a first location of a backside insulating layer of a wafer; wherein the sensor is configured to monitor a coupling between the first conductive interface and the second conductive interface to provide a monitoring result; wherein the monitoring occurs while the second conductive interface contacts a second location of the backside insulating layer; and wherein the controller is configured to control a generation of the zapping pulses in response to the monitoring result.

公开(公告)号：US09666411B1

公开(公告)日：2017-05-30

申请号：US14929812

申请日：2015-11-02

Applicant: KLA-Tencor Corporation

Inventor： Mark A. McCord ,  Gabor D. Toth

IPC: G21K5/04 ,  H01J37/26 ,  H01J37/285 ,  H01J37/20

CPC classification number: H01J37/265 ,  H01J37/026 ,  H01J37/20 ,  H01J37/285 ,  H01J2237/0044 ,  H01J2237/28

Abstract: One embodiment relates to an apparatus for virtual grounding of a target substrate in a charged-particle beam apparatus. A primary gun generates charged particles for a process beam that is focused on a frontside surface of the target substrate, and the target substrate is held by a stage. An electrostatic voltmeter measures a voltage potential of the target substrate, and a charge-control gun impinges a beam of charged particles to the target substrate. A feedback control loop is used to control the flood gun depending on the voltage potential measured by the electrostatic voltmeter. Other embodiments, aspects and features are also disclosed.

公开(公告)号：US09460887B2

公开(公告)日：2016-10-04

申请号：US12468026

申请日：2009-05-18

Applicant: You-Jin Wang ,  Chung-Shih Pan

Inventor： You-Jin Wang ,  Chung-Shih Pan

IPC: H01J37/28 ,  H01J37/02

CPC classification number: H01J37/02 ,  H01J37/28 ,  H01J2237/0041 ,  H01J2237/0044

Abstract: A layer of conductive or semi-conductive material is formed on a surface of a sample and then the sample, when being charged particle beam imaged, is electrically coupled with an object having a large charge-receiving or charge-storage capacity (e.g., capacitance). Hence, the charging on the sample surface is removed and released quickly by the layer. The layer is then removed by reacting it with a predefined agent. The reaction forms a gaseous product which does not form a physical or chemical bond to the sample surface.

Abstract translation: 在样品的表面上形成导电或半导体材料层，然后当带电粒子束成像时，样品与具有大的电荷接收或电荷存储容量（例如，电容 ）。 因此，样品表面的充电被层除去并快速释放。 然后通过与预定义的试剂反应来除去该层。 该反应形成气态产物，其不与样品表面形成物理或化学键。

公开(公告)号：US20150325402A1

公开(公告)日：2015-11-12

申请号：US14796565

申请日：2015-07-10

Applicant: Hermes Microvision Inc.

Inventor： Guochong Weng ,  Youjin Wang ,  Chiyan Kuan ,  Chung-Shih Pan

IPC: H01J37/02 ,  H01J37/28

CPC classification number: H01J37/026 ,  H01J37/20 ,  H01J2237/0041 ,  H01J2237/0044 ,  H01J2237/2008 ,  H01J2237/2811

Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.

Abstract translation: 提供一种用于接地极紫外线掩模（EUV掩模）的结构，用于通过电子束检查工具在检查期间对EUV掩模进行放电。 用于将EUV掩模接地的结构包括至少一个接地引脚以接触EUV掩模上的导电区域，其中EUV掩模可以在侧壁或/或背侧上具有另外的导电层。 通过使用电子束检查系统来增强EUV掩模的检查质量，因为EUV掩模上的累积充电是接地的。 通过同时使用电子束扫描连续移动台上的EUV掩模的反射表面。 舞台的移动方向垂直于电子束的扫描方向。

公开(公告)号：US09070533B2

公开(公告)日：2015-06-30

申请号：US13954838

申请日：2013-07-30

Applicant: FEI Company

Inventor： Marc Castagna ,  Clive D. Chandler ,  Wayne Kurowski ,  Daniel Woodrow Phifer, Jr.

IPC: H01J37/18 ,  H01J37/26 ,  H01J37/28

CPC classification number: H01J37/26 ,  H01J37/18 ,  H01J37/28 ,  H01J2237/0044 ,  H01J2237/006 ,  H01J2237/24445

Abstract: A gas injection system provides a local region at the sample surface that has sufficient gas concentration to be ionized by secondary electrons to neutralize charged on the sample surface. In some embodiments, a gas concentration structure concentrates the gas near the surface. An optional hole in the gas concentration structure allows the charged particle beam to impact the interior of a shrouded region. In some embodiments, an anode near the surface increases the number of ions that return to the work piece surface for charge neutralization, the anode in some embodiments being a part of the gas injection system and in some embodiments being a separate structure.

Abstract translation: 气体注入系统在样品表面处提供具有足够气体浓度的局部区域，以通过二次电子电离以中和样品表面上的带电。 在一些实施例中，气体浓度结构将气体靠近表面集中。 气体浓度结构中的可选孔允许带电粒子束冲击被覆盖区域的内部。 在一些实施例中，表面附近的阳极增加返回到工件表面以进行电荷中和的离子的数量，在一些实施例中，阳极是气体注入系统的一部分，并且在一些实施例中为独立的结构。

公开(公告)号：US20150102220A1

公开(公告)日：2015-04-16

申请号：US14575102

申请日：2014-12-18

Applicant: Hermes Microvision Inc.

Inventor： Guoching Weng ,  Youjin Wang ,  Chiyan Kuan ,  Chung-Shih Pan

IPC: H05F3/02 ,  H01J37/20 ,  H01J37/26

CPC classification number: G01N23/2251 ,  H01J37/026 ,  H01J37/20 ,  H01J37/28 ,  H01J2237/004 ,  H01J2237/0041 ,  H01J2237/0044 ,  H01J2237/2007 ,  H01J2237/2008 ,  H01J2237/202 ,  H01J2237/2448 ,  H01J2237/2602 ,  H01J2237/2811 ,  H01J2237/2813 ,  H05F3/02

Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.

Abstract translation: 提供一种用于接地极紫外线掩模（EUV掩模）的结构，用于通过电子束检查工具在检查期间对EUV掩模进行放电。 用于将EUV掩模接地的结构包括至少一个接地引脚以接触EUV掩模上的导电区域，其中EUV掩模可以在侧壁或/或背侧上具有另外的导电层。 通过使用电子束检查系统来增强EUV掩模的检查质量，因为EUV掩模上的累积充电是接地的。 通过同时使用电子束扫描连续移动台上的EUV掩模的反射表面。 舞台的移动方向垂直于电子束的扫描方向。

公开(公告)号：US20150049411A1

公开(公告)日：2015-02-19

申请号：US14531263

申请日：2014-11-03

Applicant: Hermes Microvision Inc.

Inventor： YI-XIANG WANG ,  JUYING DOU ,  KENICHI KANAI

IPC: H01L21/683

CPC classification number: H01L21/6831 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/20 ,  H01J37/28 ,  H01J37/3174 ,  H01J2237/0044 ,  H01J2237/2008

Abstract: A wafer grounding apparatus and method adaptable to a charged particle beam apparatus is disclosed. A wafer substrate is supported by a wafer mount. A pulse current pin is arranged to be in contact with a backside film formed on a backside of the wafer substrate. A grounding pulse generator provides at least one pulse to drive the pulse current pin such that dielectric breakdown occurring at the backside film leads to establishment of a current path through the backside films. Accordingly, a current flows in the wafer substrate through this current path and then flows out of the wafer substrate via at least one current return path formed from capacitive coupling between the wafer substrate and the wafer mount.

Abstract translation: 公开了适用于带电粒子束装置的晶片接地装置和方法。 晶片基板由晶片支架支撑。 脉冲电流引脚布置成与形成在晶片衬底的背面上的背面膜接触。 接地脉冲发生器提供至少一个脉冲以驱动脉冲电流引脚，使得在背面薄膜处发生的电介质击穿导致建立通过背面薄膜的电流路径。 因此，电流通过该电流路径流过晶片衬底，然后通过由晶片衬底和晶片座之间的电容耦合形成的至少一个电流返回路径流出晶片衬底。

公开(公告)号：US08779397B2

公开(公告)日：2014-07-15

申请号：US12970084

申请日：2010-12-16

Applicant: Michihiro Kawaguchi ,  Keisuke Yamaguchi ,  Shun Kanezawa ,  Soichiro Mitsui ,  Kiminobu Akeno

Inventor： Michihiro Kawaguchi ,  Keisuke Yamaguchi ,  Shun Kanezawa ,  Soichiro Mitsui ,  Kiminobu Akeno

IPC: H01J37/317 ,  H01J37/20

CPC classification number: H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J2237/0044

Abstract: A substrate cover 40 includes a conductive portion 41 having a shape corresponding to a peripheral edge region of a substrate. Since at least part of the conductive portion includes transmissive portions 47 each formed of a light transmissive member, it is configured so as to allow desired light to penetrate through. The position of each edge portion of the substrate is detected in such a manner that the substrate is disposed with the substrate cover 40 placed thereon between light irradiation means and a light detecting unit, irradiation light directed from the light irradiation means located above the substrate to the edge portion of the substrate is made to penetrate through at least part of the substrate cover 40, the edge portion of the substrate is then irradiated with light from the irradiation means.

Abstract translation: 基板盖40包括具有与基板的周缘区域对应的形状的导电部41。 由于导电部分的至少一部分包括由透光构件形成的透射部分47，所以它被构造成允许期望的光穿透。 以这样的方式检测基板的每个边缘部分的位置，使得基板设置在其上放置有光照射装置和光检测单元之间的基板盖40，从位于基板上方的光照射装置引导的照射光 使基板的边缘部分穿过基板盖40的至少一部分，然后用来自照射装置的光照射基板的边缘部分。