Ionic conductor and method of producing the same
    71.
    发明申请
    Ionic conductor and method of producing the same 审中-公开
    离子导体及其制造方法

    公开(公告)号:US20050003275A1

    公开(公告)日:2005-01-06

    申请号:US10768182

    申请日:2004-02-02

    申请人: Hiroshi Nagasawa

    发明人: Hiroshi Nagasawa

    CPC分类号: C25B13/04

    摘要: The present invention relates to an ionic conductor and a method of producing the ionic conductor, and more particularly to an ionic conductor for use in an ionics element such as a diaphragm and an ionics instrument such as an electrolysis apparatus, and a method of producing such an ionic conductor. The ionic conductor according to the present invention includes a porous body 1 which has a plurality of continuous pores 1a passing through the porous body 1, and ionizable functional groups 2 attached to surfaces of the continuous pores 1a. The porous body 1 comprises a porous ceramics such as a porous glass, a porous alumina, or a porous mullite.

    摘要翻译: 本发明涉及离子导体和离子导体的制造方法,更具体地说,涉及用于诸如隔膜的离子元件和诸如电解装置的离子仪器的离子导体及其制造方法 离子导体。 根据本发明的离子导体包括多孔体1,其具有穿过多孔体1的多个连续孔1a和连接到连续孔1a的表面的可离子化的官能团2。 多孔体1包括多孔陶瓷,例如多孔玻璃,多孔氧化铝或多孔莫来石。

    Method of and apparatus for forming interconnection
    72.
    发明授权
    Method of and apparatus for forming interconnection 失效
    形成互连的方法和装置

    公开(公告)号:US06730596B1

    公开(公告)日:2004-05-04

    申请号:US09868140

    申请日:2001-06-15

    IPC分类号: H01L214763

    摘要: The present invention relates particularly to a method of and an apparatus for forming a fine interconnection in a highly integrated circuit formed on a semiconductor substrate. The method has the steps of preparing a substrate having fine recesses formed in a surface thereof, dispersing ultrafine particles made at least partly of a metal in a predetermined solvent, producing an ultrafine particle dispersed liquid, supplying the ultrafine particle dispersed liquid to the fine recesses of the substrate, heating the substrate to melt and bond the metal, and chemical mechanical polishing the surface of the substrate to remove an excessively attached metal therefrom. According to the present invention, it is possible to stably deposit an interconnection metal of good quality using an inexpensive material.

    摘要翻译: 本发明尤其涉及形成在半导体衬底上的高度集成电路中形成精细互连的方法和装置。 该方法具有如下步骤:制备在其表面形成有微细凹槽的基材,将至少部分由金属制成的超微粒子分散在预定溶剂中,制备超细颗粒分散液体,将超细颗粒分散液体供应到细小凹槽 加热衬底以熔融和粘合金属,并化学机械抛光衬底的表面以从中除去过量附着的金属。 根据本发明,可以使用便宜的材料稳定地沉积质量好的互连金属。