公开(公告)号：US20170236705A1

公开(公告)日：2017-08-17

申请号：US15518642

申请日：2016-01-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Dong LI ,  Xiaoyong LU ,  Xiaolong LI ,  Zheng LIU ,  Shuai ZHANG ,  Yucheng CHAN ,  Chienhung LIU ,  Chunping LONG

IPC: H01L21/02 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L21/0268 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02592 ,  H01L27/1222 ,  H01L27/1285 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

Abstract: The present application provides a low temperature poly-silicon thin film, a low temperature poly-silicon thin film transistor and manufacturing methods thereof, and a display device. The manufacturing method of a low temperature poly-silicon thin film comprises steps of: forming an amorphous silicon thin film on a base; and performing a laser annealing process on the amorphous silicon thin film by using a mask plate to form a low temperature poly-silicon thin film, wherein the mask plate includes a transmissive region and a shielding region surrounding the transmissive region, and two sides of the shielding region adjacent to the transmissive region are in concave-convex shapes. Performance of the low temperature poly-silicon thin film formed by the manufacturing method of a low temperature poly-silicon thin film in the present application is enhanced.

公开(公告)号：US20160300858A1

公开(公告)日：2016-10-13

申请号：US15083646

申请日：2016-03-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaoyong LU ,  Dong LI ,  Zheng LIU ,  Shuai ZHANG ,  Liang SUN ,  Chunping LONG

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L21/26586 ,  H01L29/66492 ,  H01L29/66537 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78675

Abstract: The embodiments of the present disclosure provide a polysilicon thin film transistor and manufacturing method thereof, an array substrate, and a display panel. The method for manufacturing a polysilicon thin film transistor comprises: forming, on a substrate, a gate, a source and a drain, and an active layer. Forming the active layer comprises: forming a polysilicon layer on the substrate, which comprises a channel region and extension regions; performing ion injection process in the extension regions to form lightly-doped regions close to the channel region and a source region and a drain region; prior to or following the formation of the lightly-doped regions, employing halo ion injection process to form halo regions at the positions of the channel region which are close to the lightly-doped regions.

Abstract translation: 本公开的实施例提供一种多晶硅薄膜晶体管及其制造方法，阵列基板和显示面板。 制造多晶硅薄膜晶体管的方法包括：在衬底上形成栅极，源极和漏极以及有源层。 形成有源层包括：在衬底上形成多晶硅层，其包括沟道区域和延伸区域; 在所述延伸区域中进行离子注入处理，以形成靠近所述沟道区域和源极区域和漏极区域的轻掺杂区域; 在形成轻掺杂区之前或之后，采用光晕离子注入工艺在靠近轻掺杂区的沟道区的位置形成卤素区。