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268 条记录 (耗时 0.036 秒)

    GMR element having fixed magnetic layer provided on side surface of free magnetic layer
    73.
    发明授权
    GMR element having fixed magnetic layer provided on side surface of free magnetic layer 失效
    具有固定磁性层的GMR元件设置在自由磁性层的侧表面上

    公开(公告)号：US07218485B2

    公开(公告)日：2007-05-15

    申请号：US10755641

    申请日：2004-01-12

    申请人： Naoya Hasegawa ,  Masamichi Saito

    发明人： Naoya Hasegawa ,  Masamichi Saito

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/313 ,  G11B5/3903 ,  G11B2005/3996

    摘要： A free magnetic layer contains free magnetic material layers and an intermediate layer interposed therebetween. A fixed magnetic layer contains fixed magnetic material layers and a non-magnetic intermediate layer interposed therebetween. The free magnetic material layer and the fixed magnetic material layers are formed at equivalent film positions. The magnetizations of the fixed magnetic material layers provided in a vertical direction are antiparallel to each other, and the magnetizations of the free magnetic material layers provided in the vertical direction are antiparallel to each other. By an external magnetic field, the magnetizations of the free magnetic material layer are rotated in phase to magnetization directions of the fixed magnetic material layers.

    摘要翻译： 自由磁性层包含自由磁性材料层和介于其间的中间层。 固定磁性层包含固定的磁性材料层和介于其间的非磁性中间层。 自由磁性材料层和固定磁性材料层形成在等效的膜位置。 在垂直方向上设置的固定磁性材料层的磁化反向平行，并且沿垂直方向设置的自由磁性材料层的磁化彼此反平行。 通过外部磁场，自由磁性材料层的磁化与固定磁性材料层的磁化方向相位旋转。

    Magnetic sensing element including a pair of antiferromagnetic layers separated by spacer section in track width direction and method for fabricating same
    74.
    发明授权
    Magnetic sensing element including a pair of antiferromagnetic layers separated by spacer section in track width direction and method for fabricating same 失效
    磁传感元件包括一对沿轨道宽度方向的间隔部分分开的反铁磁性层及其制造方法

    公开(公告)号：US07212383B2

    公开(公告)日：2007-05-01

    申请号：US10755698

    申请日：2004-01-12

    申请人： Naoya Hasegawa ,  Eiji Umetsu

    发明人： Naoya Hasegawa ,  Eiji Umetsu

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3932 ,  G11B5/3929 ,  G11B2005/3996

    摘要： Disclosed are a magnetic sensing element in which side reading can be prevented, read sensitivity can be improved, and gap narrowing is enabled, and a method for fabricating the same. A magnetic sensing element includes a pair of first antiferromagnetic layers separated by a first spacer section. A first spacer layer is disposed in the first spacer section. The first spacer layer has the same composition as that of the first antiferromagnetic layers, and has a disordered crystal structure with a thickness that is smaller than that of the first antiferromagnetic layers. A first free magnetic layer is disposed on the continuous surface including the upper surfaces of the first antiferromagnetic layers and the first spacer layers. The magnetic sensing element also includes a nonmagnetic interlayer, a second free magnetic layer, and a pair of second antiferromagnetic layers separated by a second spacer section on the second free magnetic layer.

    摘要翻译： 公开了一种磁传感元件，其中可以防止侧读，可提高读灵敏度，并能实现间隙变窄及其制造方法。 磁传感元件包括由第一间隔部分隔开的一对第一反铁磁层。 第一间隔层设置在第一间隔部分中。 第一间隔层具有与第一反铁磁性层相同的组成，并且具有比第一反铁磁层小的厚度的无序晶体结构。 第一自由磁性层设置在包括第一反铁磁层和第一间隔层的上表面的连续表面上。 磁感测元件还包括非磁性中间层，第二自由磁性层和由第二自由磁性层上的第二间隔部分隔开的一对第二反铁磁层。

    Dual-type magnetic detecting element in which free magnetic layer and pinned magnetic layer have suitably selected β values
    75.
    发明授权
    Dual-type magnetic detecting element in which free magnetic layer and pinned magnetic layer have suitably selected β values 有权
    双磁性检测元件，其中自由磁性层和固定磁性层具有适当选择的β值

    公开(公告)号：US07158354B2

    公开(公告)日：2007-01-02

    申请号：US10642899

    申请日：2003-08-18

    申请人： Masamichi Saito ,  Yosuke Ide ,  Naoya Hasegawa

    发明人： Masamichi Saito ,  Yosuke Ide ,  Naoya Hasegawa

    IPC分类号： G11B5/39 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093

    摘要： A first free magnetic layer, a second free magnetic layer, a lower pinned magnetic layer, and an upper pinned magnetic layer are formed of magnetic materials whose β values are suitably set so that the resistances for up-spin conduction electrons of all the magnetic layers become lower than those for down-spin conduction electrons when the magnetization of a free magnetic layer is changed to exhibit a lowest resistance. The magnetic detecting element exhibits an increased change in resistance per area.

    摘要翻译： 第一自由磁性层，第二自由磁性层，下部被钉扎的磁性层和上部被钉扎的磁性层由适当设定的β值的磁性材料形成，使得所有磁性层的上部 - 自旋传导电子的电阻 当自由磁性层的磁化改变为具有最低电阻时，其变得低于用于向下自旋传导电子的电子。 磁性检测元件表现出每区域电阻的增加的变化。

    Magnetic detecting element with diffusion-preventing layer between spacer Cu and magnetic layer, and method of manufacturing the same
    76.
    发明申请
    Magnetic detecting element with diffusion-preventing layer between spacer Cu and magnetic layer, and method of manufacturing the same 有权
    具有隔离层Cu和磁性层之间的防扩散层的磁性检测元件及其制造方法

    公开(公告)号：US20060227467A1

    公开(公告)日：2006-10-12

    申请号：US11396807

    申请日：2006-04-03

    申请人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    发明人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： H01F41/302 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3903 ,  H01F10/1936 ,  H01F10/3263 ,  H01F10/3277 ,  H01F10/3281 ,  H01L43/08 ,  H01L43/10

    摘要： There is provided a magnetic detecting element which can realize high reproduction power and reduce asymmetry of reproduction waveforms by devising a configuration of a free magnetic layer or a pinned magnetic layer, and a method of manufacturing a magnetic detecting element. The free magnetic layer is formed to have a three-layered structure of a CoMnZ alloy layer, a CoMnX alloy layer, and a CoMnZ alloy layer. The CoMnX alloy layer is formed of a metal compound whose compositional formula is represented by CoaMnbXc (X is one or more elements selected from a group of Ge, Sn, Ga, and Sb, a, b, and c are atomic percent, and a+b+c=100 atomic percent). The CoMnZ alloy layer is formed of a metal compound whose compositional formula is represented by CodMneZf (Z is Al or Si, d, e, and f are atomic percent, and d+e+f=100 atomic percent).

    摘要翻译： 提供了一种通过设计自由磁性层或钉扎磁性层的构造来实现高再现能力并减少再现波形的不对称性的磁性检测元件，以及制造磁性检测元件的方法。 自由磁性层形成为具有CoMnZ合金层，CoMnX合金层和CoMnZ合金层的三层结构。 CoMnX合金层由金属化合物形成，其组成式由下式表示：（X是一个或多个元素 选自Ge，Sn，Ga和Sb中的一组，a，b和c是原子百分数，a + b + c = 100原子％）。 CoMnZ合金层由金属化合物形成，其组成式由下式表示：Z为Al或Si， d，e和f是原子百分比，d + e + f = 100原子％）。

    Angle sensor having low waveform distortion
    79.
    发明申请
    Angle sensor having low waveform distortion 失效
    角度传感器具有低波形失真

    公开(公告)号：US20060214656A1

    公开(公告)日：2006-09-28

    申请号：US11445124

    申请日：2006-05-31

    申请人： Yoshihiro Sudo ,  Ichiro Tokunaga ,  Yoshikazu Shimizu ,  Naoya Hasegawa ,  Fumihito Koike

    发明人： Yoshihiro Sudo ,  Ichiro Tokunaga ,  Yoshikazu Shimizu ,  Naoya Hasegawa ,  Fumihito Koike

    IPC分类号： G01B7/30

    CPC分类号： G01D5/145

    摘要： A magnetoresistive element includes a meandering X-axis array that is constituted by X-axis segments alternately connected, and a meandering Y-axis array that is constituted by Y-axis segments alternately connected. When rotated 90°, the Y-axis array has the same layout as the X-axis array. Such a structure cancels the electrical resistance change due to the AMR effect, thus reducing the waveform distortion of output voltage.

    摘要翻译： 磁阻元件包括由交替连接的X轴段构成的曲折X轴阵列和由交替连接的Y轴分段构成的曲折Y轴阵列。 旋转90°时，Y轴阵列的布局与X轴阵列相同。 这样的结构抵消了由于AMR效应引起的电阻变化，从而降低了输出电压的波形失真。