Abstract:
According to one exemplary embodiment, a high-k dielectric stack situated between upper and lower electrodes of a MIM capacitor comprises a first high-k dielectric layer, where the first high-k dielectric layer has a first dielectric constant. The high-k dielectric stack further comprises an intermediate dielectric layer situated on the first high-k dielectric layer, where the intermediate dielectric layer has a second dielectric constant. According to this exemplary embodiment, the high-k dielectric stack further comprises a second high-k dielectric layer situated on the intermediate dielectric layer, where the second high-k dielectric layer has a third dielectric constant. The second dielectric constant can be lower than the first dielectric constant and the third dielectric constant. The high-k dielectric stack further comprises first and second cladding layers, where the first cladding layer is situated underneath the first high-k dielectric layer and the second cladding layer is situated on the second high-k dielectric layer.
Abstract:
A continuous infrared oven and an infrared element therefor wherein the source and return terminals of the element are located on the same lateral side of the oven conveyor and are both accessible through the same oven side wall.
Abstract:
A process for preventing food-borne illness by pasteurizing the surface of a food product. The inventive process preferably comprises the step of heating the product surface in a manner effective to bring the temperature of the surface to at least 160° F. without causing any substantial change in color and without substantially changing the internal core temperature of the product. The heating step is also preferably conducted in a manner effective for achieving at least a 3 log reduction in live bacteria on the product surface. The inventive process is particularly well suited for treating precooked meat, poultry, and fish products.
Abstract:
In an exemplary embodiment of the disclosed transformer, the transformer comprises a dielectric area. For example, the dielectric area can consist of three different dielectric layers. Also, by way of example, the dielectric area can comprise silicon dioxide or a low-k dielectric. According to the exemplary embodiment, the dielectric area is interspersed with a permeability conversion material. The permeability conversion material has a permeability higher than the permeability of the dielectric area. For example, the permeability conversion material can be nickel, iron, nickel-iron alloy, or magnetic oxide. The exemplary embodiment further comprises a first conductor and also a second conductor patterned into the dielectric area. The first and/or the second conductor can comprise copper, aluminum, or a copper-aluminum alloy. Each of the first and second conductors are made up of a number of turns which result in, respectively, the primary and secondary windings of the exemplary disclosed transformer.
Abstract:
A wall structure for enclosing a building frame comprises a wire mesh, panels of insulation, and reinforcing nailer-stringers. The mesh is secured to the outside of the frame and an insulating layer comprising, alternately, insulating panels and nailer-stringers is secured to the frame outside the wire mesh. Some of the insulating panels are vertically sectioned to accommodate electrical wires between the sections. The sections are pressed together to secure and conceal the wires. The inside surface of the wall structure is finished by applying a layer of plaster which adheres to and is reinforced by the wire mesh.