HIGH-K DIELECTRIC STACK IN A MIM CAPACITOR AND METHOD FOR ITS FABRICATION
    71.
    发明申请
    HIGH-K DIELECTRIC STACK IN A MIM CAPACITOR AND METHOD FOR ITS FABRICATION 有权
    MIM电容器中的高K介质堆叠及其制造方法

    公开(公告)号:US20050087790A1

    公开(公告)日:2005-04-28

    申请号:US10692431

    申请日:2003-10-22

    Abstract: According to one exemplary embodiment, a high-k dielectric stack situated between upper and lower electrodes of a MIM capacitor comprises a first high-k dielectric layer, where the first high-k dielectric layer has a first dielectric constant. The high-k dielectric stack further comprises an intermediate dielectric layer situated on the first high-k dielectric layer, where the intermediate dielectric layer has a second dielectric constant. According to this exemplary embodiment, the high-k dielectric stack further comprises a second high-k dielectric layer situated on the intermediate dielectric layer, where the second high-k dielectric layer has a third dielectric constant. The second dielectric constant can be lower than the first dielectric constant and the third dielectric constant. The high-k dielectric stack further comprises first and second cladding layers, where the first cladding layer is situated underneath the first high-k dielectric layer and the second cladding layer is situated on the second high-k dielectric layer.

    Abstract translation: 根据一个示例性实施例,位于MIM电容器的上电极和下电极之间的高k电介质堆叠包括第一高k电介质层,其中第一高k电介质层具有第一介电常数。 高k电介质堆叠还包括位于第一高k电介质层上的中间电介质层,其中中间介电层具有第二介电常数。 根据该示例性实施例,高k电介质堆叠还包括位于中间介电层上的第二高k电介质层,其中第二高k电介质层具有第三介电常数。 第二介电常数可以低于第一介电常数和第三介电常数。 高k电介质堆叠还包括第一和第二覆层,其中第一覆层位于第一高k电介质层下方,第二覆层位于第二高k电介质层上。

    Infrared element and oven
    72.
    发明授权
    Infrared element and oven 有权
    红外元件和烤箱

    公开(公告)号:US06867392B1

    公开(公告)日:2005-03-15

    申请号:US10764221

    申请日:2004-01-23

    Applicant: David Howard

    Inventor: David Howard

    CPC classification number: A21B2/00 H05B3/0076 H05B2203/032

    Abstract: A continuous infrared oven and an infrared element therefor wherein the source and return terminals of the element are located on the same lateral side of the oven conveyor and are both accessible through the same oven side wall.

    Abstract translation: 一种连续红外线烘箱及其红外线元件,其中元件的源极和返回端子位于烘箱输送机的同一侧面上,并且可通过相同的炉侧壁进入。

    Pasteurization of food products
    73.
    发明授权
    Pasteurization of food products 有权
    巴氏杀菌食品

    公开(公告)号:US06780448B1

    公开(公告)日:2004-08-24

    申请号:US09777472

    申请日:2001-02-06

    Applicant: David Howard

    Inventor: David Howard

    CPC classification number: A23L3/0055 A23B4/01 H05B3/0076 H05B2203/032

    Abstract: A process for preventing food-borne illness by pasteurizing the surface of a food product. The inventive process preferably comprises the step of heating the product surface in a manner effective to bring the temperature of the surface to at least 160° F. without causing any substantial change in color and without substantially changing the internal core temperature of the product. The heating step is also preferably conducted in a manner effective for achieving at least a 3 log reduction in live bacteria on the product surface. The inventive process is particularly well suited for treating precooked meat, poultry, and fish products.

    Abstract translation: 一种通过将食品表面巴氏杀菌来预防食源性疾病的方法。 本发明的方法优选包括以有效使表面温度至少为160°F的方式加热产品表面的步骤,而不会引起颜色的任何实质变化,而基本上不改变产品的内部核心温度。 加热步骤也优选以有效实现产品表面上的活细菌至少3log减少的方式进行。 本发明的方法特别适用于处理预煮肉,家禽和鱼制品。

    On-chip transformers
    74.
    发明授权
    On-chip transformers 有权
    片上变压器

    公开(公告)号:US06459352B1

    公开(公告)日:2002-10-01

    申请号:US09779402

    申请日:2001-02-08

    CPC classification number: H01F27/2804 H01F17/0006 H01F41/046

    Abstract: In an exemplary embodiment of the disclosed transformer, the transformer comprises a dielectric area. For example, the dielectric area can consist of three different dielectric layers. Also, by way of example, the dielectric area can comprise silicon dioxide or a low-k dielectric. According to the exemplary embodiment, the dielectric area is interspersed with a permeability conversion material. The permeability conversion material has a permeability higher than the permeability of the dielectric area. For example, the permeability conversion material can be nickel, iron, nickel-iron alloy, or magnetic oxide. The exemplary embodiment further comprises a first conductor and also a second conductor patterned into the dielectric area. The first and/or the second conductor can comprise copper, aluminum, or a copper-aluminum alloy. Each of the first and second conductors are made up of a number of turns which result in, respectively, the primary and secondary windings of the exemplary disclosed transformer.

    Abstract translation: 在所公开的变压器的示例性实施例中,变压器包括电介质区域。 例如,电介质区域可以由三个不同的电介质层组成。 另外,作为示例,电介质区域可以包括二氧化硅或低k电介质。 根据示例性实施例,电介质区域散布有磁导率转换材料。 磁导率转换材料具有比介电区域的磁导率高的磁导率。 例如,导磁率转换材料可以是镍,铁,镍 - 铁合金或者磁性氧化物。 该示例性实施例还包括第一导体以及图案化到电介质区域中的第二导体。 第一和/或第二导体可以包括铜,铝或铜 - 铝合金。 第一和第二导体中的每一个由分别导致示例性公开的变压器的初级和次级绕组的匝数组成。

    Building wall structure
    75.
    发明授权
    Building wall structure 失效
    建筑墙体结构

    公开(公告)号:US4292775A

    公开(公告)日:1981-10-06

    申请号:US935536

    申请日:1978-08-21

    Applicant: David Howard

    Inventor: David Howard

    CPC classification number: E04B2/845 E04B1/7654 E04B2/562 E04B2/723

    Abstract: A wall structure for enclosing a building frame comprises a wire mesh, panels of insulation, and reinforcing nailer-stringers. The mesh is secured to the outside of the frame and an insulating layer comprising, alternately, insulating panels and nailer-stringers is secured to the frame outside the wire mesh. Some of the insulating panels are vertically sectioned to accommodate electrical wires between the sections. The sections are pressed together to secure and conceal the wires. The inside surface of the wall structure is finished by applying a layer of plaster which adheres to and is reinforced by the wire mesh.

    Abstract translation: 用于封闭建筑物框架的墙壁结构包括金属丝网,绝缘板和加强钉枪。 网状物固定在框架的外部,绝缘层,绝缘层,绝缘层和钉子 - 桁条,固定在框架外面的网状网。 一些绝缘板被垂直切割以容纳各部分之间的电线。 将这些部分压在一起以固定和隐藏电线。 壁结构的内表面通过施加粘附在丝网上并被丝网加固的一层石膏来完成。

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