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    Pasteurization system for root vegetables
    2.
    发明授权
    Pasteurization system for root vegetables 有权
    根蔬菜巴氏杀菌系统

    公开(公告)号：US09215892B2

    公开(公告)日：2015-12-22

    申请号：US13966359

    申请日：2013-08-14

    Applicant: David Howard

    Inventor： David Howard

    IPC: A23B4/06 ,  A23L3/18 ,  A47J37/04 ,  A23L3/16 ,  A23N15/08 ,  A23L1/01 ,  A23L1/212 ,  A23B7/005 ,  A23N12/02 ,  A23N12/08 ,  F26B23/02

    CPC classification number: A23L3/185 ,  A23B7/0053 ,  A23L3/165 ,  A23N12/023 ,  A23N12/08 ,  A23N15/08 ,  A23V2002/00 ,  A47J37/04 ,  A47J37/045 ,  F26B23/02

    Abstract: A system and method for pasteurizing the surface of a food product includes a flame pasteurizing means arranged to transfer heat to an outer layer of the food product as it is carried by a cook belt. The flame pasteurizing means provides a medium that engulfs more than 50% of the surface area of the skin or outer layer and raises the temperature of the outer layer to at least 145° F. (about 62.8° C.). A washing means, arranged at an exit point of the flame pasteurizing means, removes the raised temperature outer layer and stops heat transfer to an adjacent inner layer of the food product. The pasteurized and washed product retains the same color and flavor as that of the unpasteurized product.

    Abstract translation: 用于将食品的表面巴氏杀菌的系统和方法包括火焰巴氏消毒装置，其被布置成将热量传送到食物产品的外层，因为其由烹饪带携带。 火焰巴氏消毒装置提供一种介质，其能够吸收超过皮肤或外层表面积的50％，并将外层的温度提高至至少145°F（约62.8℃）。 设置在火焰巴氏灭菌装置的出口点的洗涤装置除去升高的温度外层，并阻止热量传递到食品的相邻内层。 巴氏杀菌和洗涤的产品保持与未经消毒的产品相同的颜色和风味。

    Deep silicon via for grounding of circuits and devices, emitter ballasting and isolation
    3.
    发明授权
    Deep silicon via for grounding of circuits and devices, emitter ballasting and isolation 有权
    深硅通孔用于电路和器件的接地，发射极的镇流和隔离

    公开(公告)号：US08598713B2

    公开(公告)日：2013-12-03

    申请号：US12800663

    申请日：2010-05-20

    Applicant: Volker Blaschke ,  Todd Thibeault ,  Chris Cureton ,  Paul Hurwitz ,  Arjun Kar-Roy ,  David Howard ,  Marco Racanelli

    Inventor： Volker Blaschke ,  Todd Thibeault ,  Chris Cureton ,  Paul Hurwitz ,  Arjun Kar-Roy ,  David Howard ,  Marco Racanelli

    IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

    CPC classification number: H01L21/743 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: According to an exemplary embodiment, a semiconductor die including at least one deep silicon via is provided. The deep silicon via comprises a deep silicon via opening that extends through at least one pre-metal dielectric layer of the semiconductor die, at least one epitaxial layer of the semiconductor die, and partially into a conductive substrate of the semiconductor die. The deep silicon via further comprises a conductive plug situated in the deep silicon via opening and forming an electrical contact with the conductive substrate. The deep silicon via may include a sidewall dielectric layer and a bottom conductive layer. A method for making a deep silicon via is also disclosed. The deep silicon via is used to, for example, provide a ground connection for power transistors in the semiconductor die.

    Abstract translation: 根据示例性实施例，提供了包括至少一个深硅通孔的半导体管芯。 深硅通孔包括深硅通孔开口，其延伸穿过半导体管芯的至少一个预金属介电层，半导体管芯的至少一个外延层，并且部分地延伸到半导体管芯的导电衬底中。 深硅通孔还包括通过开口位于深硅中的导电塞，并与导电基底形成电接触。 深硅通孔可以包括侧壁电介质层和底部导电层。 还公开了制造深硅通孔的方法。 深硅通孔用于例如为半导体管芯中的功率晶体管提供接地连接。

    DIALYSIS SYSTEM AND METHOD FOR CASSETTE-BASED PUMPING AND VALVING
    4.
    发明申请
    DIALYSIS SYSTEM AND METHOD FOR CASSETTE-BASED PUMPING AND VALVING 有权
    用于基于CASSETTE的泵送和阀门的DIALYSIS系统和方法

    公开(公告)号：US20110106003A1

    公开(公告)日：2011-05-05

    申请号：US12987738

    申请日：2011-01-10

    Applicant: Robert W. Childers ,  Richard Avoy ,  John Booras ,  Joseph H. Bowman, JR. ,  Paul Grippo ,  Andrew D. Hopping ,  David Howard ,  Jeffrey W. Jerrell ,  Benjamin Kellam ,  Brian Lauman ,  Sherwin Shang ,  David Vescovi ,  Tahua Yang ,  Alex Yu

    Inventor： Robert W. Childers ,  Richard Avoy ,  John Booras ,  Joseph H. Bowman, JR. ,  Paul Grippo ,  Andrew D. Hopping ,  David Howard ,  Jeffrey W. Jerrell ,  Benjamin Kellam ,  Brian Lauman ,  Sherwin Shang ,  David Vescovi ,  Tahua Yang ,  Alex Yu

    IPC: A61M1/28

    CPC classification number: A61M1/281 ,  A61M1/16 ,  A61M1/1696 ,  A61M1/28 ,  A61M1/284 ,  A61M2205/122

    Abstract: A peritoneal dialysis system includes a disposable cassette including a flexible sheet; a hardware unit including (i) at least one pump actuator and piston head moved by the pump actuator, (ii) at least one valve actuator, (iii) at least one sensor, and (iv) a disposable cassette interface for interfacing with the disposable cassette, the disposable cassette interface including: (a) at least one pump aperture, the at least one piston head moveable out of and retractable into the at least one pump aperture to move a corresponding pumping portion of the flexible sheet of the disposable cassette, the piston head moving within a vacuum chamber, the vacuum chamber enabling a vacuum to be pulled around the piston head to the flexible sheet of the disposable cassette; (b) at least one valve aperture, at least a portion of the at least one valve actuator located in the valve aperture to move a valve portion of the flexible sheet of the disposable cassette; and (c) at least one sensor aperture, the at least one sensor located in the at least one sensor aperture, the at least one sensor operable with a sensor portion of the flexible sheet of the disposable cassette.

    Abstract translation: 腹膜透析系统包括：包括柔性片的一次性盒; 硬件单元包括（i）由泵致动器移动的至少一个泵致动器和活塞头，（ii）至少一个阀致动器，（iii）至少一个传感器，以及（iv）一次性盒接口，用于与 所述一次性盒式接口包括：（a）至少一个泵孔，所述至少一个活塞头可移动到所述至少一个泵孔中并可缩回到所述至少一个泵孔中，以移动所述一次性盒的柔性片的相应的泵送部分 所述活塞头在真空室内移动，所述真空室能够使所述活塞头周围的真空被拉到所述一次性盒的柔性片; （b）至少一个阀孔，所述至少一个阀致动器的至少一部分位于阀孔中，以移动一次性盒的柔性片的阀部分; 和（c）至少一个传感器孔，所述至少一个传感器位于所述至少一个传感器孔中，所述至少一个传感器可与一次性盒的柔性片的传感器部分一起操作。

    MIM capacitor high-k dielectric for increased capacitance density
    6.
    发明授权
    MIM capacitor high-k dielectric for increased capacitance density 有权
    MIM电容高k电介质，增加电容密度

    公开(公告)号：US07719041B2

    公开(公告)日：2010-05-18

    申请号：US11729350

    申请日：2007-03-28

    Applicant: Hadi Abdul-Ridha ,  David Howard

    Inventor： Hadi Abdul-Ridha ,  David Howard

    IPC: H01L27/108

    CPC classification number: H01L23/5223 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: According to one embodiment of the invention, a method for fabricating a MIM capacitor in a semiconductor die includes a step of depositing a first interconnect metal layer. The method further includes depositing a high-k dielectric layer comprising AlNX (aluminum nitride) on the first interconnect layer. The method further includes depositing a layer of MIM capacitor metal on the high-k dielectric layer. The method further includes etching the layer of MIM capacitor metal to form an upper electrode of the MIM capacitor. According to this exemplary embodiment, the first interconnect metal layer, the high-k dielectric layer, and the layer of MIM capacitor metal can be deposited in a PVD process chamber. The method further includes etching the high-k dielectric layer to form a MIM capacitor dielectric segment and etching the first interconnect metal layer to form a lower electrode of the MIM capacitor.

    Abstract translation: 根据本发明的一个实施例，在半导体管芯中制造MIM电容器的方法包括沉积第一互连金属层的步骤。 该方法还包括在第一互连层上沉积包含AlNX（氮化铝）的高k电介质层。 该方法还包括在高k电介质层上沉积MIM电容器金属层。 该方法还包括蚀刻MIM电容器金属层以形成MIM电容器的上电极。 根据该示例性实施例，第一互连金属层，高k电介质层和MIM电容器金属层可以沉积在PVD处理室中。 该方法还包括蚀刻高k电介质层以形成MIM电容器介电段并蚀刻第一互连金属层以形成MIM电容器的下电极。

    Flying apparatus
    7.
    发明授权
    Flying apparatus 有权
    飞行器具

    公开(公告)号：US07503826B2

    公开(公告)日：2009-03-17

    申请号：US11425971

    申请日：2006-06-22

    Applicant: David Howard

    Inventor： David Howard

    IPC: A63H27/18 ,  A63H27/00

    CPC classification number: A63H27/001

    Abstract: This invention provides a small lightweight glider that is hollow and made from a molded thin film material. Typically the glider is formed in the shape of a bird or a plane. The body of the glider comprises top half and a lower half, which form a hollow fuselage, a left wing and a right wing extending laterally from the fuselage. The glider also comprises a ballast weight, a stiffener, and optionally an interior skeleton. The interior of the glider is open to the outside atmosphere and requires no inflation.

    Abstract translation: 本发明提供一种小型轻型滑翔机，其是中空的并且由模制的薄膜材料制成。 通常，滑翔机形成为鸟或飞机的形状。 滑翔机的主体包括上半部和下半部，其形成中空的机身，左翼和从机身横向延伸的右翼。 滑翔机还包括压载重量，加强件和任选的内部骨架。 滑翔机的内部对外界气氛开放，不需要通风。

    Method for fabricating a MIM capacitor having increased capacitance density and related structure
    8.
    发明授权
    Method for fabricating a MIM capacitor having increased capacitance density and related structure 有权
    具有增加的电容密度和相关结构的MIM电容器的制造方法

    公开(公告)号：US07268038B2

    公开(公告)日：2007-09-11

    申请号：US10997638

    申请日：2004-11-23

    Applicant: Dieter Dornisch ,  Kenneth M. Ring ,  Tinghao F. Wang ,  David Howard ,  Guangming Li

    Inventor： Dieter Dornisch ,  Kenneth M. Ring ,  Tinghao F. Wang ,  David Howard ,  Guangming Li

    IPC: H01L21/8242

    CPC classification number: H01L28/40

    Abstract: According to one embodiment of the invention, a method for fabricating a MIM capacitor in a semiconductor die includes a step of depositing a first interconnect metal layer. The method further includes depositing a layer of silicon nitride on the first interconnect layer. The layer of silicon nitride is deposited in a deposition process using an ammonia-to-silane ratio of at least 12.5. The method further includes depositing a layer of MIM capacitor metal on the layer of silicon nitride. The method further includes etching the layer of MIM capacitor metal to form an upper electrode of the MIM capacitor. According to this exemplary embodiment, the method further includes etching the layer of silicon nitride to form a MIM capacitor dielectric segment and etching the first interconnect metal layer to form a lower electrode of the MIM capacitor. The MIM capacitor has a capacitance density of at least 2.0 fF/um2.

    Abstract translation: 根据本发明的一个实施例，在半导体管芯中制造MIM电容器的方法包括沉积第一互连金属层的步骤。 该方法还包括在第一互连层上沉积氮化硅层。 氮化硅层在沉积过程中使用至少12.5的氨 - 硅烷比沉积。 该方法还包括在氮化硅层上沉积MIM电容器金属层。 该方法还包括蚀刻MIM电容器金属层以形成MIM电容器的上电极。 根据该示例性实施例，该方法还包括蚀刻氮化硅层以形成MIM电容器电介质段并蚀刻第一互连金属层以形成MIM电容器的下电极。 MIM电容器具有至少2.0fF / um 2的电容密度。

    Method and apparatus for sanitizing a drain
    9.
    发明授权
    Method and apparatus for sanitizing a drain 有权
    消毒排水的方法和设备

    公开(公告)号：US07264774B1

    公开(公告)日：2007-09-04

    申请号：US11085353

    申请日：2005-03-21

    Applicant: David Howard

    Inventor： David Howard

    IPC: A61L2/18 ,  E03D9/00

    CPC classification number: A61L2/18 ,  E03C1/126 ,  E03C1/284 ,  E03C1/30

    Abstract: A method of sanitizing a drain having a drain conduit with a drain trap therein and an improved floor drain for use in the method of sanitizing. The method comprises the steps of (a) temporarily blocking the drain conduit at a position downstream of the trap and (b) at least partially back-filling the drain upstream of the blocked position with a sanitizing fluid.

    Abstract translation: 一种消毒排水管的方法，该排水管具有排水管，排水管在其内设有改进的地漏，用于消毒方法。 该方法包括以下步骤：（a）在捕集器下游的位置临时阻塞排水管道;（b）用消毒液至少部分地将堵塞位置上游的排水回填。

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