CMOS-compatible MEM switches and method of making
    72.
    发明授权
    CMOS-compatible MEM switches and method of making 失效
    CMOS兼容MEM开关及制作方法

    公开(公告)号:US06396368B1

    公开(公告)日:2002-05-28

    申请号:US09438085

    申请日:1999-11-10

    IPC分类号: H01P110

    摘要: A microelectromechanical (MEM) switch is fabricated inexpensively by using processing steps which are standard for fabricating multiple metal layer integrated circuits, such as CMOS. The exact steps may be adjusted to be compatible with the process of a particular foundry, resulting in a device which is both low cost and readily integrable with other circuits. The processing steps include making contacts for the MEM switch from metal plugs which are ordinarily used as vias to connect metal layers which are separated by a dielectric layer. Such contact vias are formed on either side of a sacrificial metallization area, and then the interconnect metallization is removed from between the contact vias, leaving them separated. Dielectric surrounding the contacts is etched back so that they protrude toward each other. Thus, when the contacts are moved toward each other by actuating the MEM switch, they connect firmly without obstruction. Tungsten is typically used to form vias in CMOS processes, and it makes an excellent contact material, but other via metals may also be employed as contacts. Interconnect metallization may be employed for other structural and interconnect needs of the MEM switch, and is preferably standard for the foundry and process used. Various metals and dielectric materials may be used to create the switches, but in a preferred embodiment the interconnect metal layers are aluminum and the dielectric material is SiO2, materials which are fully compatible with standard four-layer CMOS fabrication processes.

    摘要翻译: 通过使用标准制造多个金属层集成电路(如CMOS)的处理步骤,廉价地制造了微机电(MEM)开关。 可以将精确的步骤调整为与特定代工厂的过程兼容,从而导致低成本且易于与其他电路集成的装置。 处理步骤包括通过通常用作通孔的金属插头进行MEM开关的接触,以连接由电介质层分离的金属层。 这种接触通孔形成在牺牲金属化区域的任一侧,然后从接触通孔之间移除互连金属化,使它们分离。 围绕触点的介质被回蚀,使得它们彼此突出。 因此,当通过致动MEM开关使触点彼此移动时,它们牢固地连接而不阻塞。 钨通常用于在CMOS工艺中形成通孔,并且它制成优良的接触材料,但也可以使用其它通孔金属作为接触。 互连金属化可以用于MEM开关的其他结构和互连需求,并且优选地是用于所使用的铸造和工艺的标准。 可以使用各种金属和介电材料来制造开关,但是在优选实施例中,互连金属层是铝,并且介电材料是SiO 2,与标准四层CMOS制造工艺完全兼容的材料。

    Reconfigurable antenna for multiple band, beam-switching operation
    73.
    发明授权
    Reconfigurable antenna for multiple band, beam-switching operation 失效
    可重构天线多波段,波束切换操作

    公开(公告)号:US06384797B1

    公开(公告)日:2002-05-07

    申请号:US09629681

    申请日:2000-08-01

    IPC分类号: H01Q340

    CPC分类号: H01Q15/0066 H01Q3/44 H01Q3/46

    摘要: A multiple band reconfigurable reflecting antenna array and method for multiple band operation and beam steering. An array of dipole antennas is disposed on a multiple band high impedance surface. The antenna array is reconfigured by changing the length of the dipole elements, to thereby change the dipoles resonant frequency. At a given frequency band, small changes in dipole length allow to steer the reflected beam in the selected direction; whether large changes in dipole length permit to switch the operating frequency band. A method of broadening the bandwidth of a high impedance surface is also exposed.

    摘要翻译: 一种多频带可重构反射天线阵列及多波段操作和波束转向的方法。 偶极天线阵列设置在多​​波段高阻抗表面上。 通过改变偶极子元件的长度来重新配置天线阵列,从而改变偶极谐振频率。 在给定的频带,偶极长度的小变化允许沿所选方向转向反射光束; 偶极长度的大变化允许切换工作频带。 扩大高阻抗表面带宽的方法也暴露出来。

    Polarization-insensitive, electro-optic modulator
    74.
    发明授权
    Polarization-insensitive, electro-optic modulator 失效
    极化不敏感的电光调制器

    公开(公告)号:US5751867A

    公开(公告)日:1998-05-12

    申请号:US591997

    申请日:1996-01-26

    摘要: An intensity modulator having a Mach-Zehnder structure with first and second waveguide arms formed of an electro-optic polymer. The active molecules of the waveguide arms are poled in first and second different and substantially orthogonal directions. Electrodes are arranged to receive a modulating voltage and generate first and second electric fields which are respectively aligned with the first and second directions. As a consequence, the modulation depth of an optical signal which is transmitted through the modulator is substantially insensitive to the polarization of the signal. Other embodiments combine mode splitters and combiners with first and second Mach-Zehnder modulators which have electro-optic polymer waveguides. The active molecules of the arms of the two Mach-Zehnder modulators are poled in orthogonal directions.

    摘要翻译: 具有Mach-Zehnder结构的强度调制器,其具有由电光聚合物形成的第一和第二波导臂。 波导臂的活性分子在第一和第二不同且基本正交的方向上极化。 电极被布置成接收调制电压并产生分别与第一和第二方向对齐的第一和第二电场。 因此,通过调制器传输的光信号的调制深度基本上对信号的极化不敏感。 其他实施例将模式分离器和组合器与具有电光聚合物波导的第一和第二马赫 - 曾德调制器组合。 两个Mach-Zehnder调制器的臂的活性分子在正交方向上极化。