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    CMOS-compatible MEM switches and method of making
    1.
    发明授权
    CMOS-compatible MEM switches and method of making 失效

    公开(公告)号：US06667245B2

    公开(公告)日：2003-12-23

    申请号：US10016894

    申请日：2001-12-13

    申请人： Lap-Wai Chow ,  Tsung-Yuan Hsu ,  Daniel J. Hyman ,  Robert Y. Loo ,  Paul Ouyang ,  James H. Schaffner ,  Adele Schmitz ,  Robert N. Schwartz

    发明人： Lap-Wai Chow ,  Tsung-Yuan Hsu ,  Daniel J. Hyman ,  Robert Y. Loo ,  Paul Ouyang ,  James H. Schaffner ,  Adele Schmitz ,  Robert N. Schwartz

    IPC分类号： H01L2100

    CPC分类号： B81C1/00246 ,  B81B2201/014 ,  B81C2201/014 ,  B81C2203/0714 ,  B81C2203/0735 ,  H01H1/58 ,  H01H59/0009 ,  H01H2001/0057

    摘要： A microelectromechanical (MEM) switch is fabricated inexpensively by using processing steps which are standard for fabricating multiple metal layer integrated circuits, such as CMOS. The exact steps may be adjusted to be compatible with the process of a particular foundry, resulting in a device which is both low cost and readily integrable with other circuits. The processing steps include making contacts for the MEM switch from metal plugs which are ordinarily used as vias to connect metal layers which are separated by a dielectric layer. Such contact vias are formed on either side of a sacrificial metallization area, and then the interconnect metallization is removed from between the contact vias, leaving them separated. Dielectric surrounding the contacts is etched back so that they protrude toward each other. Thus, when the contacts are moved toward each other by actuating the MEM switch, they connect firmly without obstruction. Tungsten is typically used to form vias in CMOS processes, and it makes an excellent contact material, but other via metals may also be employed as contacts. Interconnect metallization may be employed for other structural and interconnect needs of the MEM switch, and is preferably standard for the foundry and process used. Various metals and dielectric materials may be used to create the switches, but in a preferred embodiment the interconnect metal layers are aluminum and the dielectric material is SiO2, materials which are fully compatible with standard four-layer CMOS fabrication processes.

    CMOS-compatible MEM switches and method of making
    2.
    发明授权
    CMOS-compatible MEM switches and method of making 失效
    CMOS兼容MEM开关及制作方法

    公开(公告)号：US06396368B1

    公开(公告)日：2002-05-28

    申请号：US09438085

    申请日：1999-11-10

    申请人： Lap-Wai Chow ,  Tsung-Yuan Hsu ,  Daniel J. Hyman ,  Robert Y. Loo ,  Paul Ouyang ,  James H. Schaffner ,  Adele Schmitz ,  Robert N. Schwartz

    发明人： Lap-Wai Chow ,  Tsung-Yuan Hsu ,  Daniel J. Hyman ,  Robert Y. Loo ,  Paul Ouyang ,  James H. Schaffner ,  Adele Schmitz ,  Robert N. Schwartz

    IPC分类号： H01P110

    CPC分类号： B81C1/00246 ,  B81B2201/014 ,  B81C2201/014 ,  B81C2203/0714 ,  B81C2203/0735 ,  H01H1/58 ,  H01H59/0009 ,  H01H2001/0057

    摘要： A microelectromechanical (MEM) switch is fabricated inexpensively by using processing steps which are standard for fabricating multiple metal layer integrated circuits, such as CMOS. The exact steps may be adjusted to be compatible with the process of a particular foundry, resulting in a device which is both low cost and readily integrable with other circuits. The processing steps include making contacts for the MEM switch from metal plugs which are ordinarily used as vias to connect metal layers which are separated by a dielectric layer. Such contact vias are formed on either side of a sacrificial metallization area, and then the interconnect metallization is removed from between the contact vias, leaving them separated. Dielectric surrounding the contacts is etched back so that they protrude toward each other. Thus, when the contacts are moved toward each other by actuating the MEM switch, they connect firmly without obstruction. Tungsten is typically used to form vias in CMOS processes, and it makes an excellent contact material, but other via metals may also be employed as contacts. Interconnect metallization may be employed for other structural and interconnect needs of the MEM switch, and is preferably standard for the foundry and process used. Various metals and dielectric materials may be used to create the switches, but in a preferred embodiment the interconnect metal layers are aluminum and the dielectric material is SiO2, materials which are fully compatible with standard four-layer CMOS fabrication processes.

    摘要翻译： 通过使用标准制造多个金属层集成电路（如CMOS）的处理步骤，廉价地制造了微机电（MEM）开关。 可以将精确的步骤调整为与特定代工厂的过程兼容，从而导致低成本且易于与其他电路集成的装置。 处理步骤包括通过通常用作通孔的金属插头进行MEM开关的接触，以连接由电介质层分离的金属层。 这种接触通孔形成在牺牲金属化区域的任一侧，然后从接触通孔之间移除互连金属化，使它们分离。 围绕触点的介质被回蚀，使得它们彼此突出。 因此，当通过致动MEM开关使触点彼此移动时，它们牢固地连接而不阻塞。 钨通常用于在CMOS工艺中形成通孔，并且它制成优良的接触材料，但也可以使用其它通孔金属作为接触。 互连金属化可以用于MEM开关的其他结构和互连需求，并且优选地是用于所使用的铸造和工艺的标准。 可以使用各种金属和介电材料来制造开关，但是在优选实施例中，互连金属层是铝，并且介电材料是SiO 2，与标准四层CMOS制造工艺完全兼容的材料。

    Apparatus for improved detection of carbon monoxide by infrared absorption spectroscopy
    5.
    发明授权
    Apparatus for improved detection of carbon monoxide by infrared absorption spectroscopy 失效
    用于通过红外吸收光谱法改进一氧化碳检测的装置

    公开(公告)号：US07179422B2

    公开(公告)日：2007-02-20

    申请号：US10387004

    申请日：2003-03-11

    申请人： Kevin W. Kirby ,  Amanda C. Phelps ,  Robert N. Schwartz

    发明人： Kevin W. Kirby ,  Amanda C. Phelps ,  Robert N. Schwartz

    IPC分类号： G01N21/00

    CPC分类号： G01N21/3504 ,  Y10T436/20 ,  Y10T436/205831

    摘要： A method for detecting the presence and amount of carbon monoxide, comprising the use of infrared spectroscopy to compare the spectra of the test gas containing carbon monoxide and the reference gas. The reference gas is the test gas from which carbon monoxide had been removed by conversion using catalysts. The presence and quantity of carbon monoxide is determined by deducting the spectrum of the reference gas from the spectrum of the test gas. The catalysts comprise nanoparticles of gold precipitated on a metal oxide or hydroxide carrier. An apparatus implementing this method.

    摘要翻译： 一种用于检测一氧化碳的存在和量的方法，包括使用红外光谱法比较含有一氧化碳和参考气体的测试气体的光谱。 参考气体是使用催化剂通过转化除去一氧化碳的试验气体。 通过从测试气体的光谱中扣除参考气体的光谱来确定一氧化碳的存在和数量。 催化剂包含在金属氧化物或氢氧化物载体上析出的金纳米颗粒。 实施该方法的装置。

    Process and apparatus for determining ratio of fluid components such as methanol and water for reforming feed
    6.
    发明授权
    Process and apparatus for determining ratio of fluid components such as methanol and water for reforming feed 失效
    用于确定重整进料的流体组分如甲醇和水的比例的方法和装置

    公开(公告)号：US06690180B2

    公开(公告)日：2004-02-10

    申请号：US09855315

    申请日：2001-05-15

    申请人： Robert N. Schwartz ,  Paul O. Braatz ,  Kevin W. Kirby

    发明人： Robert N. Schwartz ,  Paul O. Braatz ,  Kevin W. Kirby

    IPC分类号： G01R2726

    CPC分类号： H01M8/04089 ,  G01N27/221 ,  H01M8/04194

    摘要： A method and sensor for determining the ratio of two components in a fluid mixture comprising a test cell in open communication with the fluid mixture and a reference cell containing a desired fluid mixture not in contact with the fluid mixture being tested, said reference and test cells having the same cell geometry. By use of a capacitance divider system, one determines the relative capacitances of said cells correlated with the dielectric constants of the respective fluid mixtures and ascertains the ratio of one component to the other component in the fluid mixture on the basis of the linear and monotonic correlation between the dielectric constant of the mixture at a given temperature and the ratio of one component to the other component. Preferably a mixture of methanol and water is tested such as for use as a feed to a reformer used in supplying hydrogen to a fuel cell. A fixed capacitor equivalent to the reference cell at a given temperature is usually substituted for the latter.

    摘要翻译： 一种用于确定包含与流体混合物开放连通的测试池的流体混合物中的两种组分的比例的方法和传感器，以及含有不与所测试的流体混合物接触的所需流体混合物的参考池，所述参考和测试池 具有相同的单元几何形状。 通过使用电容分配器系统，可以确定所述电池的相对电容与各流体混合物的介电常数相关，并且基于线性和单调相关性确定流体混合物中的一种组分与另一组分的比例 在给定温度下混合物的介电常数和一种组分与另一组分的比例。 优选地测试甲醇和水的混合物，例如用作用于向燃料电池供应氢气的重整器的进料。 在给定温度下等效于参考电池的固定电容器通常用于后者。

    Shielded fiber optic connector
    8.
    发明授权
    Shielded fiber optic connector 失效
    屏蔽光纤连接器

    公开(公告)号：US5960136A

    公开(公告)日：1999-09-28

    申请号：US986438

    申请日：1997-12-08

    申请人： Samuil Shakhman ,  Robert N. Schwartz

    发明人： Samuil Shakhman ,  Robert N. Schwartz

    IPC分类号： G02B6/36 ,  G02B6/42

    CPC分类号： H05K9/0058 ,  G02B6/4246 ,  G02B6/4277 ,  G02B2006/4297

    摘要： A conductive shield is formed around a fiber-optic connector. The shield includes a compressible means that encircles the perimeter of the connector. When the connector is inserted, the compressible means electrically contact the chassis to prevent emissions through panel openings required by fiber-optic transceivers.

    摘要翻译： 在光纤连接器周围形成导电屏蔽。 护罩包括围绕连接器周边的可压缩装置。 当连接器插入时，可压缩装置电气接触底盘，以防止通过光纤收发器所需的面板开口的排放。

    Double-doped BaTiO.sub.3 crystal for holographic storage
    9.
    发明授权
    Double-doped BaTiO.sub.3 crystal for holographic storage 失效
    用于全息存储的双掺杂BaTiO3晶体

    公开(公告)号：US5847851A

    公开(公告)日：1998-12-08

    申请号：US813016

    申请日：1997-03-06

    申请人： Barry A. Wechsler ,  Marvin B. Klein ,  Robert N. Schwartz ,  Gerald D. Bacher

    发明人： Barry A. Wechsler ,  Marvin B. Klein ,  Robert N. Schwartz ,  Gerald D. Bacher

    IPC分类号： G03H1/02 ,  G03H1/04

    CPC分类号： G03H1/02 ,  G03H2001/026 ,  G03H2001/0268

    摘要： A new photorefractive material comprises BaTiO.sub.3 double-doped with two dopant species, both of which have at least two valence states, with one of the dopant species (e.g., cerium) having an ionization level that is near the middle of the barium titanate bandgap and the other dopant species (e.g., rhodium) having an ionization level that is closer to the valence band edge of barium titanate, such that both dopant species are sensitive to visible light, but only one dopant species (the one closer to the valence band edge) is sensitive to infrared radiation. The double-doped BaTiO.sub.3 provides a unique combination of photorefractive properties, thereby improving its performance as a holographic storage medium. The double-doped barium titanate crystal is employed as a holographic recording element. The double-doped barium titanate crystal has a dark storage time at room temperature of several years or more and may be nondestructively read out at an infrared wavelength. Recording information on the double-doped barium titanate crystal is done by first sensitizing the double-doped barium titanate crystal with a substantially uniform beam of radiation at one wavelength and then either simultaneously or subsequently storing information in the barium titanate crystal with an incident recording beam that has a wavelength that is longer than that of the sensitizing beam. Nondestructive read-out is accomplished using only the second (writing) beam.

    摘要翻译： 新的光折变材料包括双掺杂两种掺杂物质的BaTiO 3，两种掺杂物质都具有至少两个价态，其中一种掺杂物质（例如，铈）具有接近钛酸钡带隙中间的电离水平， 具有更接近钛酸钡的价带边缘的电离水平的其它掺杂物质（例如，铑），使得两种掺杂剂物质对可见光敏感，但仅一种掺杂剂物质（更接近价带边缘 ）对红外辐射敏感。 双掺杂BaTiO3提供光折射性质的独特组合，从而提高其作为全息存储介质的性能。 双掺杂钛酸钡晶体用作全息记录元件。 双掺杂钛酸钡晶体在室温下几十年以上的暗存储时间可以在红外波长下非破坏性地读出。 通过首先使具有一个波长的基本上均匀的辐射束的双掺杂钛酸钡晶体敏化，然后同时或随后在具有入射记录光束的钛酸钡晶体中存储信息，来进行双掺杂钛酸钡晶体的记录信息 其具有比感光束的波长更长的波长。 非破坏性读取仅使用第二（写入）光束实现。