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    Doped Polysilanes, Compositions Containing the Same, Methods for Making the Same, and Films Formed Therefrom
    71.
    发明申请
    Doped Polysilanes, Compositions Containing the Same, Methods for Making the Same, and Films Formed Therefrom 有权
    掺杂聚硅烷，含有它们的组合物，其制备方法和其中形成的膜

    公开(公告)号：US20110197783A1

    公开(公告)日：2011-08-18

    申请号：US13093273

    申请日：2011-04-25

    申请人： Wenzhuo Guo ,  Vladimir K. Dioumaev ,  Joerg Rockenberger

    发明人： Wenzhuo Guo ,  Vladimir K. Dioumaev ,  Joerg Rockenberger

    IPC分类号： C09D11/00 ,  C07F7/30 ,  C07F9/02 ,  C07F9/90 ,  C07F7/02

    CPC分类号： C07F7/0896 ,  C08G77/60 ,  C08L83/16

    摘要： Doped polysilanes, inks containing the same, and methods for their preparation and use are disclosed. The doped polysilane generally has the formula H-[AaHb(DRx)m]q-[(AcHdR1e)n]p—H, where each instance of A is independently Si or Ge, and D is B, P, As or Sb. In preferred embodiments, R is H, -AfHf+1R2f, alkyl, aryl or substituted aryl, and R1 is independently H, halogen, aryl or substituted aryl. In one aspect, the method of making a doped poly(aryl)silane generally includes the steps of combining a doped silane of the formula AaHb+2(DRx)m (optionally further including a silane of the formula AcHd+2R1e) with a catalyst of the formula R4wR5yMXz (or an immobilized derivative thereof) to form a doped poly(aryl)silane, then removing the metal M. In another aspect, the method of making a doped polysilane includes the steps of halogenating a doped polyarylsilane, and reducing the doped halopolysilane with a metal hydride to form the doped polysilane. The synthesis of semiconductor inks via dehydrocoupling of doped silanes and/or germanes allows for tuning of the ink properties (e.g., viscosity, boiling point, surface tension and dopant level or concentration) and for deposition of doped silicon films or islands by spincoating, inkjetting, dropcasting, etc., with or without the use of UV irradiation.

    摘要翻译： 公开了掺杂聚硅烷，含有它们的油墨及其制备和使用方法。 掺杂的聚硅烷通常具有式H [AaHb（DRx）m] q - [（AcHdR1e）n] p-H，其中A的每个实例独立地为Si或Ge，D为B，P，As或Sb。 在优选的实施方案中，R是H，-AfHf + 1R2f，烷基，芳基或取代的芳基，R1独立地是H，卤素，芳基或取代的芳基。 一方面，制备掺杂的聚（芳基）硅烷的方法通常包括将式AaHb + 2（DRx）m的掺杂硅烷（任选进一步包括式AcHd + 2R1e的硅烷）与催化剂 （或其固定化的衍生物）以形成掺杂的聚（芳基）硅烷，然后除去金属M.另一方面，制备掺杂聚硅烷的方法包括以下步骤：卤化掺杂的聚芳基硅烷，并将 掺杂的卤代聚硅烷与金属氢化物反应形成掺杂的聚硅烷。 通过掺杂硅烷和/或锗烷的脱氢键合合半导体油墨允许调节油墨性能（例如粘度，沸点，表面张力和掺杂剂水平或浓度），以及通过旋涂，喷墨来沉积掺杂的硅膜或岛 ，放映等，有或没有使用紫外线照射。

    Printed dopant layers
    72.
    发明申请
    Printed dopant layers 有权
    印刷掺杂剂层

    公开(公告)号：US20080042212A1

    公开(公告)日：2008-02-21

    申请号：US11888942

    申请日：2007-08-03

    申请人： Arvind Kamath ,  James Montague Cleeves ,  Joerg Rockenberger ,  Patrick Smith ,  Fabio Zurcher

    发明人： Arvind Kamath ,  James Montague Cleeves ,  Joerg Rockenberger ,  Patrick Smith ,  Fabio Zurcher

    IPC分类号： H01L27/092

    CPC分类号： H01L27/12 ,  H01L27/1292 ,  H01L29/78618

    摘要： An electronic device, including a substrate, a plurality of first semiconductor islands on the substrate, a plurality of second semiconductor islands on the substrate, a first dielectric film on the first subset of the semiconductor islands, second dielectric film on the second semiconductor islands, and a metal layer in electrical contact with the first and second semiconductor islands. The first semiconductor islands and the first dielectric film contain a first diffusible dopant, and the second semiconductor islands and the second dielectric layer film contain a second diffusible dopant different from the first diffusible dopant. The present electronic device can be manufactured using printing technologies, thereby enabling high-throughput, low-cost manufacturing of electrical circuits on a wide variety of substrates.

    摘要翻译： 一种电子器件，包括衬底，衬底上的多个第一半导体岛，衬底上的多个第二半导体岛，半导体岛的第一子集上的第一电介质膜，第二半导体岛上的第二电介质膜， 以及与第一和第二半导体岛电接触的金属层。 第一半导体岛和第一介电膜包含第一可扩散掺杂剂，第二半导体岛和第二介电层膜含有不同于第一可扩散掺杂剂的第二可扩散掺杂物。 本电子装置可以使用印刷技术制造，从而能够在各种基板上实现高通量，低成本的电路制造。

    Interface layer for the fabrication of electronic devices
    73.
    发明授权
    Interface layer for the fabrication of electronic devices 失效
    接口层用于制造电子设备

    公开(公告)号：US07315068B2

    公开(公告)日：2008-01-01

    申请号：US11077240

    申请日：2005-03-09

    申请人： Scott Haubrich ,  Klaus Kunze ,  James C. Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

    发明人： Scott Haubrich ,  Klaus Kunze ,  James C. Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

    IPC分类号： H01L29/94

    CPC分类号： H01L27/1292

    摘要： The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.

    摘要翻译： 本发明涉及用于制造具有薄的各向异性导电层界面层的电子器件的方法，所述薄的各向异性导电层界面层形成在衬底和优选图案化导电层的有源器件层之间。 界面层优选地在有源器件层和衬底之间提供欧姆和/或整流接触，并且优选地提供有源器件层与衬底的良好粘附。 活性器件层优选由使用压花方法或其它合适的印刷和/或成像方法图案化的纳米颗粒油墨溶液形成。 有源器件层优选地被图案化成适于制造薄膜晶体管等的栅极结构的阵列。

    Interface layer for the fabrication of electronic devices
    75.
    发明授权
    Interface layer for the fabrication of electronic devices 失效
    接口层用于制造电子设备

    公开(公告)号：US06911385B1

    公开(公告)日：2005-06-28

    申请号：US10226903

    申请日：2002-08-22

    申请人： Scott Haubrich ,  Klaus Kunze ,  James C Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

    发明人： Scott Haubrich ,  Klaus Kunze ,  James C Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

    IPC分类号： H01L21/44 ,  H01L21/76 ,  H01L21/77

    CPC分类号： H01L27/1292

    摘要： The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.

    摘要翻译： 本发明涉及用于制造具有薄的各向异性导电层界面层的电子器件的方法，所述薄的各向异性导电层界面层形成在衬底和优选图案化导电层的有源器件层之间。 界面层优选地在有源器件层和衬底之间提供欧姆和/或整流接触，并且优选地提供有源器件层与衬底的良好粘附。 活性器件层优选由使用压花方法或其它合适的印刷和/或成像方法图案化的纳米颗粒油墨溶液形成。 有源器件层优选地被图案化成适于制造薄膜晶体管等的栅极结构的阵列。