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    Interface layer for the fabrication of electronic devices
    1.
    发明授权
    Interface layer for the fabrication of electronic devices 失效
    接口层用于制造电子设备

    公开(公告)号：US07315068B2

    公开(公告)日：2008-01-01

    申请号：US11077240

    申请日：2005-03-09

    申请人： Scott Haubrich ,  Klaus Kunze ,  James C. Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

    发明人： Scott Haubrich ,  Klaus Kunze ,  James C. Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

    IPC分类号： H01L29/94

    CPC分类号： H01L27/1292

    摘要： The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.

    摘要翻译： 本发明涉及用于制造具有薄的各向异性导电层界面层的电子器件的方法，所述薄的各向异性导电层界面层形成在衬底和优选图案化导电层的有源器件层之间。 界面层优选地在有源器件层和衬底之间提供欧姆和/或整流接触，并且优选地提供有源器件层与衬底的良好粘附。 活性器件层优选由使用压花方法或其它合适的印刷和/或成像方法图案化的纳米颗粒油墨溶液形成。 有源器件层优选地被图案化成适于制造薄膜晶体管等的栅极结构的阵列。

    Interface layer for the fabrication of electronic devices
    2.
    发明授权
    Interface layer for the fabrication of electronic devices 失效
    接口层用于制造电子设备

    公开(公告)号：US06911385B1

    公开(公告)日：2005-06-28

    申请号：US10226903

    申请日：2002-08-22

    申请人： Scott Haubrich ,  Klaus Kunze ,  James C Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

    发明人： Scott Haubrich ,  Klaus Kunze ,  James C Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

    IPC分类号： H01L21/44 ,  H01L21/76 ,  H01L21/77

    CPC分类号： H01L27/1292

    摘要： The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.

    摘要翻译： 本发明涉及用于制造具有薄的各向异性导电层界面层的电子器件的方法，所述薄的各向异性导电层界面层形成在衬底和优选图案化导电层的有源器件层之间。 界面层优选地在有源器件层和衬底之间提供欧姆和/或整流接触，并且优选地提供有源器件层与衬底的良好粘附。 活性器件层优选由使用压花方法或其它合适的印刷和/或成像方法图案化的纳米颗粒油墨溶液形成。 有源器件层优选地被图案化成适于制造薄膜晶体管等的栅极结构的阵列。

    Methods for patterning using liquid embossing
    5.
    发明授权
    Methods for patterning using liquid embossing 失效
    使用液体压花图案化的方法

    公开(公告)号：US06936181B2

    公开(公告)日：2005-08-30

    申请号：US10251103

    申请日：2002-09-20

    申请人： Colin Bulthaup ,  Chris Spindt

    发明人： Colin Bulthaup ,  Chris Spindt

    IPC分类号： B29C43/02 ,  B41M1/24 ,  B41M3/00 ,  B81C1/00 ,  G03F7/00 ,  H01L51/40 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

    CPC分类号： G03F7/0002 ,  B29C43/021 ,  B29C2043/023 ,  B41M1/24 ,  B41M3/006 ,  B81C1/0046 ,  B81C2201/036 ,  B82Y10/00 ,  B82Y40/00 ,  H01L51/0004

    摘要： The current invention is directed to a method of patterning a surface or layer in the fabrication of a micro-device. In accordance with a preferred embodiment of the invention, a first mask structure is formed by depositing a layer of a first material onto the surface or layer and embossing the layer with a micro-stamp structure. The layer is preferably embossed as a liquid, which is solidified or cured to form the first mask structure. The first mask structure can be used as an etch-stop mask which is removed in a subsequent processing step or, alternatively, the first mask structure can remain a functional layer of the micro-device. In further embodiments, unmasked regions of the surface or layer are chemically treated through the first mask structure and/or a second material is deposited onto the unmasked regions of the surface or layer through the first mask structure to form a second mask structure and/or a second functional layer of the micro-device.

    摘要翻译： 本发明涉及在微型器件的制造中图案化表面或层的方法。 根据本发明的优选实施例，通过在表面或层上沉积第一材料层并用微型印模结构压印该层来形成第一掩模结构。 该层优选为液体压花，其被固化或固化以形成第一掩模结构。 第一掩模结构可以用作在后续处理步骤中去除的蚀刻停止掩模，或者替代地，第一掩模结构可以保留在微型器件的功能层。 在另外的实施例中，通过第一掩模结构化学处理表面或层的未掩蔽区域，和/或通过第一掩模结构将第二材料沉积到表面或层的未掩蔽区域上，以形成第二掩模结构和/或 微器件的第二功能层。

    Micromirror array device
    6.
    发明申请
    Micromirror array device 有权
    微镜阵列器件

    公开(公告)号：US20050196896A1

    公开(公告)日：2005-09-08

    申请号：US11110184

    申请日：2005-04-19

    申请人： Satyadev Patel ,  Andrew Huibers ,  Chris Spindt ,  Peter Heureux

    发明人： Satyadev Patel ,  Andrew Huibers ,  Chris Spindt ,  Peter Heureux

    IPC分类号： G09G3/34

    CPC分类号： G09G3/346 ,  G02B26/0833 ,  G09G2300/0426 ,  G09G2300/0465

    摘要： Disclosed herein is a micromirror array device that comprises an array of reflective deflectable mirror plates each being associated with one single addressing electrode to be deflected to an ON state angle. A light transmissive electrode is disposed proximate to the mirror plates for deflecting the mirror plates to a non-zero OFF angle. The mirror plates are arranged in the array with a center-to-centre distance of 10.17 microns or less.

    摘要翻译： 本文公开了一种微镜阵列器件，其包括反射偏转镜板阵列，每个反射镜阵列与一个单个寻址电极相关联以被偏转到ON状态角。 透光电极设置在靠近镜板的位置，用于将镜板偏转到非零OFF角度。 镜面阵列布置在阵列中，中心距离为10.17微米或更小。