利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

45 条记录 (耗时 0.037 秒)

    Interface layer for the fabrication of electronic devices
    2.
    发明授权
    Interface layer for the fabrication of electronic devices 失效
    接口层用于制造电子设备

    公开(公告)号：US07315068B2

    公开(公告)日：2008-01-01

    申请号：US11077240

    申请日：2005-03-09

    申请人： Scott Haubrich ,  Klaus Kunze ,  James C. Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

    发明人： Scott Haubrich ,  Klaus Kunze ,  James C. Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

    IPC分类号： H01L29/94

    CPC分类号： H01L27/1292

    摘要： The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.

    摘要翻译： 本发明涉及用于制造具有薄的各向异性导电层界面层的电子器件的方法，所述薄的各向异性导电层界面层形成在衬底和优选图案化导电层的有源器件层之间。 界面层优选地在有源器件层和衬底之间提供欧姆和/或整流接触，并且优选地提供有源器件层与衬底的良好粘附。 活性器件层优选由使用压花方法或其它合适的印刷和/或成像方法图案化的纳米颗粒油墨溶液形成。 有源器件层优选地被图案化成适于制造薄膜晶体管等的栅极结构的阵列。

    Interface layer for the fabrication of electronic devices
    3.
    发明授权
    Interface layer for the fabrication of electronic devices 失效
    接口层用于制造电子设备

    公开(公告)号：US06911385B1

    公开(公告)日：2005-06-28

    申请号：US10226903

    申请日：2002-08-22

    申请人： Scott Haubrich ,  Klaus Kunze ,  James C Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

    发明人： Scott Haubrich ,  Klaus Kunze ,  James C Dunphy ,  Chris Gudeman ,  Joerg Rockenberger ,  Fabio Zurcher ,  Nassrin Sleiman ,  Mao Takashima ,  Chris Spindt

    IPC分类号： H01L21/44 ,  H01L21/76 ,  H01L21/77

    CPC分类号： H01L27/1292

    摘要： The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably provides Ohmic and/or rectifying contact between the active device layer and the substrate and preferably provides good adhesion of the active device layer to the substrate. The active device layer is preferably fashioned from a nanoparticle ink solution that is patterned using embossing methods or other suitable printing and/or imaging methods. The active device layer is preferably patterned into an array of gate structures suitable for the fabrication of thin film transistors and the like.

    摘要翻译： 本发明涉及用于制造具有薄的各向异性导电层界面层的电子器件的方法，所述薄的各向异性导电层界面层形成在衬底和优选图案化导电层的有源器件层之间。 界面层优选地在有源器件层和衬底之间提供欧姆和/或整流接触，并且优选地提供有源器件层与衬底的良好粘附。 活性器件层优选由使用压花方法或其它合适的印刷和/或成像方法图案化的纳米颗粒油墨溶液形成。 有源器件层优选地被图案化成适于制造薄膜晶体管等的栅极结构的阵列。

    Nanoparticle synthesis and the formation of inks therefrom
    5.
    发明授权
    Nanoparticle synthesis and the formation of inks therefrom 有权
    纳米颗粒合成和油墨的形成

    公开(公告)号：US06878184B1

    公开(公告)日：2005-04-12

    申请号：US10215952

    申请日：2002-08-09

    申请人： Joerg Rockenberger ,  Fabio Zurcher ,  Scott Haubrich ,  Nassrin Sleiman

    发明人： Joerg Rockenberger ,  Fabio Zurcher ,  Scott Haubrich ,  Nassrin Sleiman

    IPC分类号： B22F1/00 ,  B22F9/24 ,  C09D11/00 ,  C09D11/02 ,  H01B1/02 ,  H01B1/22 ,  H05K3/12

    CPC分类号： B22F1/0022 ,  B22F1/0018 ,  B22F9/24 ,  B22F2998/00 ,  B82Y30/00 ,  C09D11/03 ,  C09D11/30 ,  H01B1/02 ,  H01B1/22 ,  H05K3/1241 ,  B22F1/0062

    摘要： Methods for making metal-based nanoparticles and inks are disclosed. In accordance with the method of the present invention, molecular metal precursors are reduced in the presence of a reaction medium to form the nanoparticles. The molecular metal precursors are preferably reduced by heating the metal precursor in the medium, by adding a reducing agent, such an aldehyde or a combination thereof. Metal precursor are preferably metal oxides, transition metal complexes or combination thereof. The method of the present invention is used to make high yield nanoparticles with a range of particle size distributions. Nanoparticle formed by the present invention include mixtures of nanoparticle, alloy nanoparticles, metal core shell nanoparticles or nanoparticle comprising a single metal species.

    摘要翻译： 公开了制备金属基纳米颗粒和油墨的方法。 根据本发明的方法，分子金属前体在反应介质存在下还原形成纳米颗粒。 分子金属前体优选通过加热介质中的金属前体，通过加入还原剂，醛或其组合来还原。 金属前体优选为金属氧化物，过渡金属络合物或其组合。 本发明的方法用于制备具有粒度分布范围的高产率纳米颗粒。 由本发明形成的纳米颗粒包括纳米颗粒，合金纳米颗粒，金属核壳纳米颗粒或包含单一金属物质的纳米颗粒的混合物。

    Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom
    6.
    发明授权
    Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom 有权
    用于形成半导体和/或含硅膜的组合物和方法，以及由其形成的结构

    公开(公告)号：US07553545B2

    公开(公告)日：2009-06-30

    申请号：US11373696

    申请日：2006-03-10

    申请人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

    发明人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

    IPC分类号： B32B9/04 ,  B32B13/04 ,  H01L21/00 ,  H01L21/20 ,  H01L21/84

    CPC分类号： C23C18/14 ,  C09D11/52 ,  C23C18/1204 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/127 ,  C23C18/1275 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02636 ,  H01L29/66757 ,  Y10T428/24802 ,  Y10T428/24926 ,  Y10T428/31663

    摘要： Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without either the semiconductor nanoparticles or the hydrogenated Group IVA element polymer. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput printing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

    摘要翻译： 用于形成图案化含硅膜的组合物，油墨和方法以及包括这种膜的图案化结构。 组合物通常包括（a）钝化的半导体纳米颗粒和（b）其中环状物质主要含有Si和/或Ge原子的第一和第二环状IVA族化合物。 油墨通常包括组合物和其中组合物可溶的溶剂。 该方法通常包括以下步骤：（1）在基材上印刷组合物或油墨以形成图案，和（2）固化图案化的组合物或油墨。 在替代实施方案中，该方法包括以下步骤：（i）固化半导体纳米颗粒组合物或至少一种环状IVA族化合物以形成薄膜，（ii）将薄膜与另一种膜相涂，和（iii）固化 涂覆的薄膜形成半导体薄膜。 半导体薄膜包括在氢化，至少部分非晶硅和/或锗中的半导体纳米颗粒的烧结混合物。 相对于通过相同方法制造的其它相同结构，但不含半导体纳米颗粒或氢化IVA族元素聚合物，该薄膜表现出改进的导电性，密度，粘附性和/或载流子迁移率。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时能够在数秒或数分钟而不是几小时或几天内形成这种薄膜的高通量印刷工艺， 与传统的光刻工艺。

    Compositions and Methods for Forming a Semiconducting and/or Silicon-Containing Film, and Structures Formed Therefrom
    8.
    发明申请
    Compositions and Methods for Forming a Semiconducting and/or Silicon-Containing Film, and Structures Formed Therefrom 审中-公开
    用于形成半导体和/或含硅膜的组合物和方法，以及由此形成的结构

    公开(公告)号：US20110104877A1

    公开(公告)日：2011-05-05

    申请号：US12984535

    申请日：2011-01-04

    申请人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

    发明人： Klaus Kunze ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

    IPC分类号： H01L21/20 ,  B82Y99/00

    CPC分类号： C23C18/14 ,  C09D11/52 ,  C23C18/1204 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/127 ,  C23C18/1275 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02636 ,  H01L29/66757 ,  Y10T428/24802 ,  Y10T428/24926 ,  Y10T428/31663

    摘要： Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without either the semiconductor nanoparticles or the hydrogenated Group IVA element polymer. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput printing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

    摘要翻译： 用于形成图案化含硅膜的组合物，油墨和方法以及包括这种膜的图案化结构。 组合物通常包括（a）钝化的半导体纳米颗粒和（b）其中环状物质主要含有Si和/或Ge原子的第一和第二环状IVA族化合物。 油墨通常包括组合物和其中组合物可溶的溶剂。 该方法通常包括以下步骤：（1）在基材上印刷组合物或油墨以形成图案，和（2）固化图案化的组合物或油墨。 在替代实施方案中，该方法包括以下步骤：（i）固化半导体纳米颗粒组合物或至少一种环状IVA族化合物以形成薄膜，（ii）将薄膜与另一种膜相涂，和（iii）固化 涂覆的薄膜形成半导体薄膜。 半导体薄膜包括在氢化，至少部分非晶硅和/或锗中的半导体纳米颗粒的烧结混合物。 相对于通过相同方法制造的其它相同结构，但不含半导体纳米颗粒或氢化IVA族元素聚合物，该薄膜表现出改进的导电性，密度，粘附性和/或载流子迁移率。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时能够在数秒或数分钟而不是几小时或几天内形成这种薄膜的高通量印刷工艺， 与传统的光刻工艺。

    Compositions and Methods for Forming a Semiconducting and/or Silicon-Containing Film, and Structures Formed Therefrom
    9.
    发明申请
    Compositions and Methods for Forming a Semiconducting and/or Silicon-Containing Film, and Structures Formed Therefrom 有权
    用于形成半导体和/或含硅膜的组合物和方法，以及由此形成的结构

    公开(公告)号：US20090053536A1

    公开(公告)日：2009-02-26

    申请号：US12261002

    申请日：2008-10-29

    申请人： Klaus KUNZE et al. ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

    发明人： Klaus KUNZE et al. ,  Scott Haubrich ,  Fabio Zurcher ,  Brent Ridley ,  Joerg Rockenberger

    IPC分类号： B32B13/04 ,  H01L29/06 ,  C04B41/50 ,  H01L21/31

    CPC分类号： C23C18/14 ,  C09D11/52 ,  C23C18/1204 ,  C23C18/1212 ,  C23C18/122 ,  C23C18/1225 ,  C23C18/127 ,  C23C18/1275 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02636 ,  H01L29/66757 ,  Y10T428/24802 ,  Y10T428/24926 ,  Y10T428/31663

    摘要： Compositions, inks and methods for forming a patterned silicon-containing film and patterned structures including such a film. The composition generally includes (a) passivated semiconductor nanoparticles and (b) first and second cyclic Group IVA compounds in which the cyclic species predominantly contains Si and/or Ge atoms. The ink generally includes the composition and a solvent in which the composition is soluble. The method generally includes the steps of (1) printing the composition or ink on a substrate to form a pattern, and (2) curing the patterned composition or ink. In an alternative embodiment, the method includes the steps of (i) curing either a semiconductor nanoparticle composition or at least one cyclic Group IVA compound to form a thin film, (ii) coating the thin film with the other, and (iii) curing the coated thin film to form a semiconducting thin film. The semiconducting thin film includes a sintered mixture of semiconductor nanoparticles in hydrogenated, at least partially amorphous silicon and/or germanium. The thin film exhibits improved conductivity, density, adhesion and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without either the semiconductor nanoparticles or the hydrogenated Group IVA element polymer. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput printing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.

    摘要翻译： 用于形成图案化含硅膜的组合物，油墨和方法以及包括这种膜的图案化结构。 组合物通常包括（a）钝化的半导体纳米颗粒和（b）其中环状物质主要含有Si和/或Ge原子的第一和第二环状IVA族化合物。 油墨通常包括组合物和其中组合物可溶的溶剂。 该方法通常包括以下步骤：（1）在基材上印刷组合物或油墨以形成图案，和（2）固化图案化的组合物或油墨。 在替代实施方案中，该方法包括以下步骤：（i）固化半导体纳米颗粒组合物或至少一种环状IVA族化合物以形成薄膜，（ii）将薄膜与另一种膜相涂，和（iii）固化 涂覆的薄膜形成半导体薄膜。 半导体薄膜包括在氢化，至少部分非晶硅和/或锗中的半导体纳米颗粒的烧结混合物。 相对于通过相同方法制造的其它相同结构，但不含半导体纳米颗粒或氢化IVA族元素聚合物，该薄膜表现出改进的导电性，密度，粘附性和/或载流子迁移率。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时能够在数秒或数分钟而不是几小时或几天内形成这种薄膜的高通量印刷工艺， 与传统的光刻工艺。