摘要:
In a semiconductor memory system having a loop forward architecture, the command, address and write data stream and the separate read data stream in form of protocol-based frames transmitted to/from memory chips in the following order: memory controller to the first memory chip, to the second memory chip, to the third memory chip and to the fourth memory chip and the read data stream is transferred from the fourth memory chip to the memory controller. With each command usually one of four memory chips is accessed for data processing, while three of four memory chips have only to fulfil a simple re-drive of CAwD stream and read data stream. By separately transferring a rank select signal not embedded in the frame from the memory controller to each memory chip a lot of more flexibility for these tasks can be achieved. Each memory chip includes a rank select switching section receiving the separately transferred rank select signal and decoding therefrom signal states which are used to select whether a CAwD signal stream is to be sent to the own memory core and processed or re-driven to the next memory chip and whether a read data stream is to be taken from its own memory core or from a read data input interface to be re-driven to the next memory chip.
摘要:
A memory arrangement includes an interface configured to transmit data in the form of data packets according to a predefined protocol. The memory arrangement includes at least two memory banks. Each memory bank includes at least one memory cell. The memory arrangement includes at least two memory bank access devices configured to facilitate accessing the data of the at least one memory cell of each of the at least two memory banks. The memory arrangement includes at least two data packet processing devices configured to encode and/or decode the data packets. The at least two data packet processing devices are assigned to different memory bank access devices.
摘要:
A synchronous signal generator is provided that contains a first and second counting and delay circuit, which both are in a subhierarchical position with respect to a reset signal synchronization/delay circuit. The reset signal synchronization/delay circuit and the first and second counting and delay circuit are triggered by a basic clock signal or a first clock signal derived therefrom to be identical in frequency and phase, and contain counting means whose initial and final counting state are adjustable in order to set, in a clocked fashion, the temporal positions of a first and second load signal that are output by the first counting and delay circuit as well as of a FIFO read clock signal that is output by the second counting and delay circuit and thus adapt them to the temporal requirements of a semiconductor memory system containing the synchronous signal generator.
摘要:
A control unit is set up to generate and output periodic clock signals, that are in sync with and at the same frequency as a periodic basic clock that is input into it, and periodic control signals, that are likewise in sync with the basic clock, and to turn on/turn off output of at least the clock signal in reaction to an activation/deactivation signal, which is routed to it externally, to a synchronous parallel/serial converter executing synchronization and serialization of a parallel data signal with the basic clock. Whereas output of the clock signal and optionally of the control signals are turned off, immediately after the activation/deactivation signal has assumed its deactivation state, the control unit is able to synchronize turning control signals on again, when the activation/deactivation signal has assumed its activation state.
摘要:
A memory device comprising a memory cell array; an input circuit for receiving command data and providing drive signals to the memory cell array; an output buffer for buffering data read out from the memory cell array; and a timer for driving the output buffer such that the buffered data are provided at an output after a predetermined time interval has elapsed, the predetermined time interval beginning with the provision of the drive signals.
摘要:
A memory arrangement includes an interface configured to transmit data in the form of data packets according to a predefined protocol. The memory arrangement includes at least two memory banks. Each memory bank includes at least one memory cell. The memory arrangement includes at least two memory bank access devices configured to facilitate accessing the data of the at least one memory cell of each of the at least two memory banks. The memory arrangement includes at least two data packet processing devices configured to encode and/or decode the data packets. The at least two data packet processing devices are assigned to different memory bank access devices.
摘要:
A synchronous parallel/serial converter is disclosed. In one embodiment, the a synchronous parallel/serial converter that receives a parallel n-bit input signal and comprising a first shift register that receives an odd-numbered part of the input signal with a first load signal in synchronism with a clock signal having a clock rate half the clock rate of a system clock, and provides a serial output as a first one-bit signal sequence; a second shift register that receives an even-numbered part of the input signal with a second load signal synchronism with the clock signal and provides a serial output as a second one-bit signal sequence; and a fusion unit that fuses the first serial one-bit signal sequence synchronously with the clock signal and the second serial one-bit signal sequence in synchronism the clock signal to form a serial one-bit output signal.
摘要:
Provided is a semiconductor memory chip that includes a memory core and an interface circuit having decoding, selecting and scheduling circuit means for decoding from a signal frame a respective type of data signals, command signals and address signals, selection of actions which are required in the memory chip according to the respective signal type and scheduling the memory core and sections of the interface circuit respectively for the decoded signal. The interface circuit further comprises a CRC bit decoding and check unit and a protection circuit arranged for protecting the memory core and for enabling/disabling switching through of signal transfer from the interface circuit to the memory core depending on a correct/incorrect signal generated by the CRC bit decoding and check unit according to the result of checking an information within the frame by means of the CRC bits which are inserted in a signal frame in association to the respective information in accordance with a defined transmission protocol.
摘要:
A synchronous parallel/serial converter is disclosed. In one embodiment, the a synchronous parallel/serial converter that receives a parallel n-bit input signal and comprising a first shift register that receives an odd-numbered part of the input signal with a first load signal in synchronism with a clock signal having a clock rate half the clock rate of a system clock, and provides a serial output as a first one-bit signal sequence; a second shift register that receives an even-numbered part of the input signal with a second load signal synchronism with the clock signal and provides a serial output as a second one-bit signal sequence; and a fusion unit that fuses the first serial one-bit signal sequence synchronously with the clock signal and the second serial one-bit signal sequence in synchronism the clock signal to form a serial one-bit output signal.
摘要:
A semiconductor memory including a plurality of memory banks disposed on an integrated circuit, each memory bank including an array of memory cells, wherein a first portion of memory cells of the plurality of memory banks has a first access speed and a second portion of memory cells of the plurality of memory banks has a second access speed, wherein the first access speed is different from the second access speed.