利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

76 条记录 (耗时 0.035 秒)

    METHOD TO REDUCE RESET CURRENT OF PCM USING STRESS LINER LAYERS
    73.
    发明申请
    METHOD TO REDUCE RESET CURRENT OF PCM USING STRESS LINER LAYERS 审中-公开
    使用应力衬层降低复位电流的方法

    公开(公告)号：US20100078621A1

    公开(公告)日：2010-04-01

    申请号：US12243809

    申请日：2008-10-01

    申请人： Mathew J. Breitwisch ,  Eric A. Joseph ,  Chung H. Lam ,  Bipin Rajendran ,  Alejandro G. Schrott

    发明人： Mathew J. Breitwisch ,  Eric A. Joseph ,  Chung H. Lam ,  Bipin Rajendran ,  Alejandro G. Schrott

    IPC分类号： H01L45/00

    CPC分类号： H01L45/1683 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/144

    摘要： A memory cell structure and method for forming the same. The method includes forming a via within a dielectric layer. The via is formed over the center of an electrically conducting bottom electrode. The method includes depositing a stress liner along at least one sidewall of the via. The stress liner imparting stress on material proximate the stress liner. In one embodiment, the stress liner provides a stress in the range of 500 to 5000 MPa on the material enclosed within its volume. The method includes depositing phase change material within the via and the volume enclosed by the stress liner. The method also includes forming an electrically conducting top electrode above the phase change material.

    摘要翻译： 一种存储单元结构及其形成方法。 该方法包括在电介质层内形成通孔。 通孔形成在导电底部电极的中心上方。 该方法包括沿通孔的至少一个侧壁沉积应力衬垫。 应力衬垫对应力衬垫附近的材料施加应力。 在一个实施例中，应力衬垫在封装在其体积内的材料上提供在500至5000MPa范围内的应力。 该方法包括在通孔和由应力衬垫包围的体积内沉积相变材料。 该方法还包括在相变材料上形成导电顶电极。

    METHOD OF FORMING RING ELECTRODE
    75.
    发明申请
    METHOD OF FORMING RING ELECTRODE 失效
    形成电极的方法

    公开(公告)号：US20090227066A1

    公开(公告)日：2009-09-10

    申请号：US12043228

    申请日：2008-03-06

    申请人： Eric A. Joseph ,  Chung H. Lam ,  Alejandro G. Schrott

    发明人： Eric A. Joseph ,  Chung H. Lam ,  Alejandro G. Schrott

    IPC分类号： H01L47/00 ,  H01L21/768

    CPC分类号： H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/16

    摘要： The present invention in one embodiment provides a method of forming an electrode that includes the steps of providing at least one metal stud in a layer of an interlevel dielectric material; forming a pillar of a first dielectric material atop the at least one metal stud; depositing an electrically conductive material atop the layer of the interlevel dielectric material and an exterior surface of the pillar, wherein a portion of the electrically conductive material is in electrical communication with the at least one metal stud; forming a layer of a second dielectric material atop the electrically conductive material and the substrate; and planarizing the layer of the second dielectric material to expose an upper surface of the electrically conductive material.

    摘要翻译： 本发明在一个实施例中提供了形成电极的方法，其包括以下步骤：在层间电介质材料层中提供至少一个金属柱; 在所述至少一个金属螺柱的顶部上形成第一介电材料的柱; 在所述层间电介质材料的层的顶部和所述柱的外表面之上沉积导电材料，其中所述导电材料的一部分与所述至少一个金属螺柱电连通; 在导电材料和基底之上形成第二电介质材料层; 以及平坦化所述第二电介质材料的层以暴露所述导电材料的上表面。

    Phase Change Memory with Tapered Heater
    76.
    发明申请
    Phase Change Memory with Tapered Heater 有权
    带锥形加热器的相变存储器

    公开(公告)号：US20090001341A1

    公开(公告)日：2009-01-01

    申请号：US11771501

    申请日：2007-06-29

    申请人： Matthew Breitwisch ,  Thomas Happ ,  Eric A. Joseph ,  Hsiang-Lan Lung ,  Jan Boris Philipp

    发明人： Matthew Breitwisch ,  Thomas Happ ,  Eric A. Joseph ,  Hsiang-Lan Lung ,  Jan Boris Philipp

    IPC分类号： H01L45/00

    CPC分类号： H01L45/1675 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

    摘要： An embodiment of the present invention includes a method of forming a nonvolatile phase change memory (PCM) cell. This method includes forming at least one bottom electrode; forming at least one phase change material layer on at least a portion of an upper surface of the bottom electrode; forming at least one heater layer on at least a portion of an upper surface of the phase change material layer; and shaping the heater layer into a tapered shape, such that an upper surface of the heater layer has a cross-sectional width that is longer than a cross-sectional width of a bottom surface of the heater layer contacting the phase change material layer.Another embodiment of the present invention includes a phase change memory (PCM) structure configurable for use as a nonvolatile storage element. The element includes at least one bottom electrode; at least one phase change material layer on at least a portion of an upper surface of the bottom electrode; and at least one heater layer on at least a portion of an upper surface of the phase change material layer, wherein the heater layer has a tapered shape such that an upper surface of the heater layer has a cross-sectional width that is longer than a cross-sectional width of a bottom surface of the heater layer contacting the phase change material layer.

    摘要翻译： 本发明的实施例包括形成非易失性相变存储器（PCM）单元的方法。 该方法包括形成至少一个底部电极; 在所述底部电极的上表面的至少一部分上形成至少一个相变材料层; 在所述相变材料层的上表面的至少一部分上形成至少一个加热层; 并且将加热器层成形为锥形，使得加热器层的上表面的横截面宽度大于与相变材料层接触的加热器层的底表面的横截面宽度。 本发明的另一实施例包括可配置为用作非易失性存储元件的相变存储器（PCM）结构。 该元件包括至少一个底部电极; 在所述底部电极的上表面的至少一部分上的至少一个相变材料层; 以及在所述相变材料层的上表面的至少一部分上的至少一个加热层，其中所述加热器层具有锥形形状，使得所述加热器层的上表面的横截面宽度比 加热器层的底表面的与相变材料层接触的横截面宽度。