Resist top coat composition and patterning process
    71.
    发明申请
    Resist top coat composition and patterning process 有权
    抵抗面漆组合和图案化工艺

    公开(公告)号:US20070298355A1

    公开(公告)日:2007-12-27

    申请号:US11808543

    申请日:2007-06-11

    摘要: There is disclosed a resist top coat composition, comprising at least a polymer that has an amino group or a sulfonamide group at a polymer end and that is represented by the following general formula (1); and a patterning process comprising: at least, a step of forming a photoresist film on a substrate; a step of forming a resist top coat on the photoresist film by using the resist top coat composition; a step of exposing the substrate; and a step of developing the substrate with a developer. There can be provided a resist top coat composition that makes it possible to provide more certainly rectangular and excellent resist patterns when a top coat is formed on a photoresist film; and a patterning process using such a composition.

    摘要翻译: 公开了一种抗蚀剂面漆组合物,其至少包含在聚合物末端具有氨基或磺酰胺基团并由以下通式(1)表示的聚合物; 以及图案化工艺,包括:至少在衬底上形成光致抗蚀剂膜的步骤; 通过使用抗蚀剂面漆组合物在光致抗蚀剂膜上形成抗蚀剂面涂层的步骤; 使基板曝光的工序; 以及用显影剂显影衬底的步骤。 可以提供抗蚀剂面漆组合物,当在光致抗蚀剂膜上形成顶涂层时,可以提供更确定的矩形和优异的抗蚀剂图案; 以及使用这种组合物的图案化工艺。

    Resist composition and patterning process using the same
    76.
    发明授权
    Resist composition and patterning process using the same 有权
    抗蚀剂组成和图案化工艺使用相同

    公开(公告)号:US07771913B2

    公开(公告)日:2010-08-10

    申请号:US11730289

    申请日:2007-03-30

    摘要: There is disclosed a resist composition comprising, at least, a polymer including repeating units represented by the following general formula (1). There can be provided a resist composition that has a good barrier property against water, prevents resist components from leaching to water, has high receding contact angle against water, does not require a protective film, has an excellent process applicability, suitable for the liquid immersion lithography and makes it possible to form micropatterns with high precision.

    摘要翻译: 公开了一种抗蚀剂组合物,其至少包含由以下通式(1)表示的重复单元的聚合物。 可以提供对水具有良好的阻隔性的抗蚀剂组合物,防止抗蚀剂成分浸出水,与水的后退接触角高,不需要保护膜,具有优异的工艺适用性,适用于液浸 光刻,并且可以以高精度形成微图案。

    Patterning process and resist overcoat material
    79.
    发明授权
    Patterning process and resist overcoat material 有权
    图案过程和抗大衣材料

    公开(公告)号:US07455952B2

    公开(公告)日:2008-11-25

    申请号:US11105510

    申请日:2005-04-14

    CPC分类号: G03F7/11 G03F7/2041

    摘要: In an immersion lithography process, a pattern is formed by forming a photoresist layer on a wafer, forming a protective coating on the photoresist layer from a resist overcoat material, exposing the layer structure to light in water, and developing. A water-insoluble, alkali-soluble material is used as the resist overcoat material.

    摘要翻译: 在浸没式光刻工艺中,通过在晶片上形成光致抗蚀剂层形成图案,在抗蚀剂外涂层材料上在光致抗蚀剂层上形成保护涂层,将层结构暴露于水中并进行显影。 使用水不溶性碱溶性材料作为抗蚀剂外涂层材料。