摘要:
Resonator holes are formed extending one to the other of a pair of opposing end surfaces of a dielectric block, and inner conductors are formed on inner peripheral surfaces of resonator holes respectively. On an outer surface of dielectric block, a pair of input/output electrodes and one antennal electrode are formed, and expect these regions, an outer conductor is formed. By the coupling of two resonators corresponding to the resonator holes, a transmitting filter is provided, and by two resonators corresponding to resonator holes, a receiving filter is formed.
摘要:
A compact dielectric band elimination filter, which is composed of fewer components and can be produced in fewer production steps, uses a resonator apparatus having a dielectric block with a plurality of throughholes each containing an inner conductor and serving as a resonator. Capacitor electrodes are formed on a main surface of the block such that series-connected resonant capacitors are provided with the inner conductors inside the throughholes. The resonator apparatus is mounted on a substrate of a layered structure having an inductor thereon. Each trap frequency of the filter associated with one of the resonators can be adjusted by making adjustments on the associated resonator without affecting the characteristics of the adjacent resonators, by forming a larger-diameter part and a smaller-diameter part separated by a step inside each throughhole or by using a dielectric block having a wider part and a narrower part through which throughholes with a uniform inner diameter are formed, such that the even-mode input impedance and odd-mode input impedance of each resonator will be equal to zero at the trap frequency associated therewith.
摘要:
A semiconductor laser device including a semiconductor substrate; a plurality of semiconductor layers including an AlGaAs layer epitaxially grown on said semiconductor substrate; a ridge having a reverse mesa shape and opposed sides formed of said plurality of semiconductor layers; an Al.sub.x Ga.sub.1-x As low temperature buffer layer (0.ltoreq..times..ltoreq.1) disposed on said AlGaAs layer at opposite sides of said ridge; a first semiconductor layer epitaxially disposed on said low temperature buffer layer at opposite sides of said ridge; and a second semiconductor layer epitaxially disposed on said ridge and said first semiconductor layer.
摘要翻译:一种半导体激光器件,包括半导体衬底; 包括在所述半导体衬底上外延生长的AlGaAs层的多个半导体层; 具有反台面形状的脊和由所述多个半导体层形成的相对侧; 在所述脊的相对侧设置在所述AlGaAs层上的Al x Ga 1-x As低温缓冲层(0≤x≤1) 在所述脊的相对侧外延地设置在所述低温缓冲层上的第一半导体层; 以及外延地设置在所述脊和所述第一半导体层上的第二半导体层。
摘要:
A band-pass filter which includes a plurality of dielectric coaxial resonators which are arranged in a parallel relation and extending axially in the same direction, and have respective coupling terminals inserted therein, and a dielectric substrate formed, on its first surface, with a plurality of coupling electrodes for connecting the respective coupling terminals. The coupling electrodes on the first surface of the dielectric substrate have an inductance element between them for connecting at least two coupling electrodes to each other. Confronting electrodes facing the coupling electrodes are formed on the other surface of the dielectric substrate to from a capacitance bypass circuit. The inductance element may be a printed circuit on the dielectric substrate or an air-core coil. The air-core coil may be located either adjacent the first surface of the substrate, or away from the substrate between the resonators.