公开(公告)号：US08723413B2

公开(公告)日：2014-05-13

申请号：US12699065

申请日：2010-02-03

申请人： Kuang-Jung Chen

发明人： Kuang-Jung Chen

IPC分类号： H01L51/50

CPC分类号： G06F3/0412 ,  G06F3/044 ,  G06F2203/04111 ,  H01L27/323

摘要： A touch-sensing display apparatus and a fabricating method thereof are provided. The touch-sensing display apparatus includes a substrate, an organic light emitting diode (OLED) display layer, and a touch structure. The OLED display layer is between the substrate and the touch structure apparatus and directly contacts with the touch structure. The touch structure includes a first water/oxygen barrier layer, an electromagnetic interference (EMI) shielding layer, a sensing circuit layer, and a second water/oxygen barrier layer. The first water/oxygen barrier layer is located on the OLED display layer. The EMI shielding layer is located on the first water/oxygen barrier layer. The sensing circuit layer is located on the EMI shielding layer. The second water/oxygen barrier layer is located on the sensing circuit layer.

摘要翻译： 提供了一种触摸感测显示装置及其制造方法。 触摸感测显示装置包括衬底，有机发光二极管（OLED）显示层和触摸结构。 OLED显示层位于基板和触摸结构装置之间，并且与触摸结构直接接触。 触摸结构包括第一水/氧阻隔层，电磁干扰（EMI）屏蔽层，感测电路层和第二水/氧阻挡层。 第一水/氧阻挡层位于OLED显示层上。 EMI屏蔽层位于第一水/氧阻隔层上。 感测电路层位于EMI屏蔽层上。 第二水/氧阻挡层位于感测电路层上。

公开(公告)号：US20130288178A1

公开(公告)日：2013-10-31

申请号：US13457735

申请日：2012-04-27

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li

IPC分类号： G03F7/20 ,  G03F7/027 ,  G03F7/004

CPC分类号： G03F7/0382 ,  G03F7/021 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/325

摘要： The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer, a crosslinking agent and a radiation sensitive acid generator. The imaging polymer includes a monomeric unit having an acid-labile moiety-substituted hydroxyl group. The patterning forming method utilizes an organic solvent developer to selectively remove an unexposed region of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

摘要翻译： 本发明涉及能够显影的光致抗蚀剂组合物和使用光致抗蚀剂组合物的图案形成方法。 光致抗蚀剂组合物包括成像聚合物，交联剂和辐射敏感的酸发生剂。 成像聚合物包括具有酸不稳定部分取代的羟基的单体单元。 图案形成方法利用有机溶剂显影剂选择性地除去光致抗蚀剂组合物的光致抗蚀剂层的未曝光区域，以在光致抗蚀剂层中形成图案化结构。 光致抗蚀剂组合物和图案形成方法对于使用193nm（ArF）光刻在半导体衬底上形成材料图案特别有用。

公开(公告)号：US08446730B2

公开(公告)日：2013-05-21

申请号：US12703155

申请日：2010-02-09

申请人： Kuang-Jung Chen ,  Shu-Tang Yeh ,  Jia-Chong Ho

发明人： Kuang-Jung Chen ,  Shu-Tang Yeh ,  Jia-Chong Ho

IPC分类号： H05K1/00

CPC分类号： H01L51/0097 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/5256 ,  H01L2251/5338 ,  Y02E10/549 ,  Y10T428/239

摘要： A package of an environmental sensitive element including a flexible substrate, an environmental sensitive element, a flexible sacrificial layer and a packaging structure is provided. The environmental sensitive element is disposed on the flexible substrate. The flexible sacrificial layer is disposed on the environmental sensitive element, wherein the environmental sensitive element includes a plurality of first thin films and the flexible sacrificial layer includes a plurality of second thin films. The bonding strength between two adjacent second thin films is substantially equal to or lower than the bonding strength between two adjacent first thin films. Further, the packaging structure covers the environmental sensitive element and the flexible sacrificial layer.

公开(公告)号：US08163466B2

公开(公告)日：2012-04-24

申请号：US12371956

申请日：2009-02-17

申请人： Kuang-Jung Chen ,  Wai-Kin Li

发明人： Kuang-Jung Chen ,  Wai-Kin Li

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/26 ,  G03F7/40

CPC分类号： G03F7/40 ,  G03F7/0035

摘要： A method forms a first patterned mask (comprising rectangular features and/or rounded openings) on a planar surface and forms a second patterned mask on the first patterned mask and the planar surface. The second patterned mask covers protected portions of the first patterned mask and the second patterned mask reveals exposed portions of the first patterned mask. The method treats the exposed portions of the first patterned mask with a chemical treatment that reduces the size of the exposed portions to create an altered first patterned mask.

摘要翻译： 一种方法在平坦表面上形成第一图案化掩模（包括矩形特征和/或圆形开口）并且在第一图案化掩模和平面表面上形成第二图案化掩模。 第二图案化掩模覆盖第一图案化掩模的受保护部分，并且第二图案化掩模揭示第一图案化掩模的暴露部分。 该方法通过减少暴露部分的尺寸以产生改变的第一图案化掩模的化学处理来处理第一图案化掩模的暴露部分。

公开(公告)号：US20120064278A1

公开(公告)日：2012-03-15

申请号：US12915018

申请日：2010-10-29

申请人： Kuang-Jung Chen

发明人： Kuang-Jung Chen

IPC分类号： B32B33/00 ,  B44C1/22 ,  B32B3/02

CPC分类号： H01L51/5246 ,  Y10T428/239

摘要： A package of environmental sensitive element including a first substrate, a second substrate, an environmental sensitive element and a filler is provided. The second substrate is disposed above the first substrate and has a first barrier structure. The first barrier structure is located between the first substrate and the second substrate. The first barrier structure and the second substrate are integrally formed and made of the same material. The environmental sensitive element is disposed on the first substrate and located between the first substrate and the second substrate. The first barrier structure surrounds the environmental sensitive element. The filler is disposed between the first substrate and the second substrate and covers the environmental sensitive element and the first barrier structure.

摘要翻译： 提供包括第一基板，第二基板，环境敏感元件和填充物的环境敏感元件的封装。 第二基板设置在第一基板上方并具有第一阻挡结构。 第一阻挡结构位于第一基板和第二基板之间。 第一阻挡结构和第二基板一体地形成并由相同的材料制成。 环境敏感元件设置在第一基板上并且位于第一基板和第二基板之间。 第一屏障结构围绕环境敏感元件。 填料设置在第一基板和第二基板之间并且覆盖环境敏感元件和第一阻挡结构。

公开(公告)号：US20110256486A1

公开(公告)日：2011-10-20

申请号：US13158901

申请日：2011-06-13

申请人： Timothy A. Brunner ,  Sean D. Burns ,  Kuang-Jung Chen ,  Wu-Song Huang ,  Kafai Lai ,  Wai-Kin Li ,  Bernhard R. Liegl

发明人： Timothy A. Brunner ,  Sean D. Burns ,  Kuang-Jung Chen ,  Wu-Song Huang ,  Kafai Lai ,  Wai-Kin Li ,  Bernhard R. Liegl

IPC分类号： G03F7/20

CPC分类号： G03F7/091 ,  G03F7/70216 ,  Y10S430/127

摘要： An anti-reflective coating material, a microelectronic structure that includes an anti-reflective coating layer formed from the anti-reflective coating material and a related method for exposing a resist layer located over a substrate while using the anti-reflective coating layer provide for attenuation of secondary reflected vertical alignment beam radiation when aligning the substrate including the resist layer located thereover. Such enhanced vertical alignment provides for improved dimensional integrity of a patterned resist layer formed from the resist layer, as well as additional target layers that may be fabricated while using the resist layer as a mask.

摘要翻译： 防反射涂层材料，包括由抗反射涂层材料形成的抗反射涂层的微电子结构和用于在使用抗反射涂层的同时使位于基板上的抗蚀剂层曝光的相关方法提供衰减 当对准包括位于其上的抗蚀剂层的衬底时，二次反射垂直取向束辐射。 这种增强的垂直对准提供了由抗蚀剂层形成的图案化抗蚀剂层的改进的尺寸完整性，以及可以在使用抗蚀剂层作为掩模时制造的附加目标层。

公开(公告)号：US20100330810A1

公开(公告)日：2010-12-30

申请号：US12490353

申请日：2009-06-24

申请人： Kuang-Jung Chen ,  Ricardo A. Donaton ,  Wu-Song Huang ,  Wai-Kin Li

发明人： Kuang-Jung Chen ,  Ricardo A. Donaton ,  Wu-Song Huang ,  Wai-Kin Li

IPC分类号： H01L21/31

CPC分类号： H01L21/31122 ,  H01L21/823842 ,  H01L21/823857

摘要： The present invention provides a method of forming a threshold voltage adjusted gate stack in which an external acid diffusion process is employed for selectively removing a portion of a threshold voltage adjusting layer from one device region of a semiconductor substrate. The external acid diffusion process utilizes an acid polymer which when baked exhibits an increase in acid concentration which can diffuse into an underlying exposed portion of a threshold voltage adjusting layer. The diffused acid reacts with the exposed portion of the threshold voltage adjusting layer providing an acid reacted layer that can be selectively removed as compared to a laterally adjacent portion of the threshold voltage adjusting layer that is not exposed to the diffused acid.

摘要翻译： 本发明提供一种形成阈值电压调节的栅极叠层的方法，其中使用外部酸扩散工艺来从半导体衬底的一个器件区域选择性地去除一部分阈值电压调节层。 外部酸扩散方法使用酸性聚合物，其在烘烤时表现出酸浓度的增加，其可以扩散到阈值电压调节层的下部暴露部分。 扩散的酸与阈值电压调节层的暴露部分反应，提供酸反应层，与不暴露于扩散的酸的阈值电压调节层的横向相邻部分相比，可以选择性地除去酸反应层。

公开(公告)号：US07838198B2

公开(公告)日：2010-11-23

申请号：US11955451

申请日：2007-12-13

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-kin Li ,  Pushkara R. Varanasi

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-kin Li ,  Pushkara R. Varanasi

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/20 ,  G03F7/26 ,  G03F7/40

CPC分类号： G03F7/0045 ,  G03F7/0397 ,  G03F7/40

摘要： A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.

摘要翻译： 一种方法和抗蚀剂组合物。 抗蚀剂组合物包括具有内酯部分的重复单元的聚合物，能够产生碱的热碱发生剂和感光酸产生剂。 聚合物具有基本上可溶于第一溶剂的性质，并且在加热聚合物之后变得基本上不溶。 该方法包括形成包含聚合物的光致抗蚀剂膜，能够释放碱的热碱发生器，光敏酸产生剂和溶剂。 该影片被图案化成像。 成像包括将膜暴露于辐射，导致产生酸催化剂。 该膜在水性碱中显影，导致去除碱溶性区域并形成图案层。 图案化层被烘烤高于该温度，导致热基发生器释放图案化层内的基底并且图案化层变得不溶于溶剂。

公开(公告)号：US20090142704A1

公开(公告)日：2009-06-04

申请号：US11949190

申请日：2007-12-03

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-kin Li

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-kin Li

IPC分类号： G03F7/00

CPC分类号： G03F7/095

摘要： A method suitable for reducing side lobe printing in a photolithography process is enabled by the use of a barrier layer on top of a photoresist on a substrate. The barrier layer is absorbing at the imaging wavelength of the underlying photoresist and thus blocks the light from reaching the photoresist. A first exposure followed by a development in an aqueous base solution selectively removes a portion of the barrier layer to reveal a section of the underlying photoresist layer. At least a portion of the revealed section of the photoresist layer is then exposed and developed to form a patterned structure in the photoresist layer. The barrier layer can also be bleachable upon exposure and bake in the present invention.

摘要翻译： 通过在基板上的光致抗蚀剂的顶部上使用阻挡层，能够实现在光刻工艺中减少旁瓣印刷的方法。 阻挡层在下面的光致抗蚀剂的成像波长处吸收，从而阻挡光到达光致抗蚀剂。 第一曝光随后在碱性水溶液中显影，选择性地除去阻挡层的一部分以露出下面的光致抗蚀剂层的一部分。 然后将光致抗蚀剂层的显露部分的至少一部分曝光和显影以在光致抗蚀剂层中形成图案化结构。 在本发明中曝光和烘烤时，阻挡层也可以是可漂白的。

公开(公告)号：US20080085598A1

公开(公告)日：2008-04-10

申请号：US11538475

申请日：2006-10-04

申请人： Wai-Kin Li ,  Kuang-Jung Chen ,  Wu-Song Huang

发明人： Wai-Kin Li ,  Kuang-Jung Chen ,  Wu-Song Huang

IPC分类号： H01L21/467

CPC分类号： H01L21/31144 ,  G03F1/70 ,  G03F7/203

摘要： A method forms a blocking mask first and then patterns a contact hole mask over the blocking mask to provide a method of patterning contact holes in a substrate. This method first forms a blocking layer on the substrate and then patterns the blocking layer to have first openings to form the blocking mask. Next, the method forms the contact hole layer on the substrate and the blocking mask, and patterns the contact hole layer to have regularly spaced second openings to form the contact hole mask. The patterning of the contact hole layer does not affect the blocking mask and the contact hole mask is aligned directly over the blocking mask. Then, the substrate is patterned through the first openings and the second openings such that the substrate is patterned only where the first openings and the second openings align with each other. Thus, the blocking mask controls which of the regularly spaced second openings will transfer into the substrate.

摘要翻译： 一种方法首先形成阻挡掩模，然后在阻挡掩模上对接触孔掩模进行图案化，以提供在衬底中图形化接触孔的方法。 该方法首先在衬底上形成阻挡层，然后将阻挡层图案化以具有第一开口以形成阻挡掩模。 接下来，该方法在基板和阻挡掩模上形成接触孔层，并且使接触孔层图案具有规则间隔开的第二开口以形成接触孔掩模。 接触孔层的图案化不影响阻挡掩模，并且接触孔掩模直接对准阻挡掩模。 然后，通过第一开口和第二开口图案化衬底，使得仅在第一开口和第二开口彼此对准的情况下衬底被图案化。 因此，阻挡掩模控制规则间隔开的第二开口中的哪一个将传递到衬底中。