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1.发明授权Method for removing threshold voltage adjusting layer with external acid diffusion process 有权用外部酸性扩散法去除阈值电压调节层的方法公开(公告)号：US08227307B2
公开(公告)日：2012-07-24
申请号：US12490353
申请日：2009-06-24
申请人： Kuang-Jung Chen , Ricardo A. Donaton , Wu-Song Huang , Wai-Kin Li
发明人： Kuang-Jung Chen , Ricardo A. Donaton , Wu-Song Huang , Wai-Kin Li
IPC分类号： H01L21/8238 , H01L21/31
CPC分类号： H01L21/31122 , H01L21/823842 , H01L21/823857
摘要： The present invention provides a method of forming a threshold voltage adjusted gate stack in which an external acid diffusion process is employed for selectively removing a portion of a threshold voltage adjusting layer from one device region of a semiconductor substrate. The external acid diffusion process utilizes an acid polymer which when baked exhibits an increase in acid concentration which can diffuse into an underlying exposed portion of a threshold voltage adjusting layer. The diffused acid reacts with the exposed portion of the threshold voltage adjusting layer providing an acid reacted layer that can be selectively removed as compared to a laterally adjacent portion of the threshold voltage adjusting layer that is not exposed to the diffused acid.
摘要翻译： 本发明提供一种形成阈值电压调节的栅极叠层的方法，其中使用外部酸扩散工艺来从半导体衬底的一个器件区域选择性地去除一部分阈值电压调节层。 外部酸扩散方法使用酸性聚合物，其在烘烤时表现出酸浓度的增加，其可以扩散到阈值电压调节层的下部暴露部分。 扩散的酸与阈值电压调节层的暴露部分反应，提供酸反应层，与不暴露于扩散的酸的阈值电压调节层的横向相邻部分相比，可以选择性地除去酸反应层。
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2.发明授权Photolithography focus improvement by reduction of autofocus radiation transmission into substrate 有权通过将自动聚焦辐射透射减少到基底中来进行光刻聚焦改进公开(公告)号：US08227180B2
公开(公告)日：2012-07-24
申请号：US13158901
申请日：2011-06-13
申请人： Timothy Allan Brunner , Sean David Burns , Kuang-Jung Chen , Wu-Song Huang , Kafai Lai , Wai-Kin Li , Bernhard R. Liegl
发明人： Timothy Allan Brunner , Sean David Burns , Kuang-Jung Chen , Wu-Song Huang , Kafai Lai , Wai-Kin Li , Bernhard R. Liegl
CPC分类号： G03F7/091 , G03F7/70216 , Y10S430/127
摘要： An anti-reflective coating material, a microelectronic structure that includes an anti-reflective coating layer formed from the anti-reflective coating material and a related method for exposing a resist layer located over a substrate while using the anti-reflective coating layer provide for attenuation of secondary reflected vertical alignment beam radiation when aligning the substrate including the resist layer located thereover. Such enhanced vertical alignment provides for improved dimensional integrity of a patterned resist layer formed from the resist layer, as well as additional target layers that may be fabricated while using the resist layer as a mask.
摘要翻译： 防反射涂层材料，包括由抗反射涂层材料形成的抗反射涂层的微电子结构和用于在使用抗反射涂层的同时使位于基板上的抗蚀剂层曝光的相关方法提供衰减 当对准包括位于其上的抗蚀剂层的衬底时，二次反射垂直取向束辐射。 这种增强的垂直对准提供了由抗蚀剂层形成的图案化抗蚀剂层的改进的尺寸完整性，以及可以在使用抗蚀剂层作为掩模时制造的附加目标层。
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3.发明申请PHOTORESIST COMPOSITIONS AND METHODS FOR SHRINKING A PHOTORESIST CRITICAL DIMENSION 失效光电复合材料组合物和方法，用于收缩光刻胶关键尺寸公开(公告)号：US20120070787A1
公开(公告)日：2012-03-22
申请号：US12883442
申请日：2010-09-16
申请人： Wu-Song Huang , Kuang-Jung Chen , Wai-Kin Li , Sen Liu
发明人： Wu-Song Huang , Kuang-Jung Chen , Wai-Kin Li , Sen Liu
IPC分类号： G03F7/20
CPC分类号： G03F7/40 , G03F7/0045 , G03F7/0397 , G03F7/405
摘要： A method for reducing a photoresist critical dimension, the method comprising depositing a photoresist film on a substrate, wherein the photoresist film includes a thermal base generator; patterning the photoresist film to form a first patterned film possessing a first critical dimension; depositing a crosslinkable film over the first patterned film; heat-activating the first patterned film, either before or after depositing the crosslinkable film, to release a base in the first patterned film and cause crosslinking in the crosslinkable film in contact with the first patterned film; and developing the crosslinkable film to remove non-crosslinked soluble portions therein to form a second patterned film possessing a reduced critical dimension compared to the first critical dimension.
摘要翻译： 一种降低光致抗蚀剂临界尺寸的方法，所述方法包括在基底上沉积光致抗蚀剂膜，其中光致抗蚀剂膜包括热碱发生器; 图案化光致抗蚀剂膜以形成具有第一临界尺寸的第一图案化膜; 在第一图案化膜上沉积可交联膜; 在沉积可交联膜之前或之后热激活第一图案化膜，以释放第一图案化膜中的碱，并引起与第一图案化膜接触的可交联膜的交联; 并且显影所述可交联膜以除去其中的非交联的可溶部分以形成与第一临界尺寸相比具有降低的临界尺寸的第二图案化膜。
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4.发明授权Photoresist compositions and process for multiple exposures with multiple layer photoresist systems 失效光刻胶组合物和多层光刻胶系统的多次曝光工艺公开(公告)号：US07803521B2
公开(公告)日：2010-09-28
申请号：US11942062
申请日：2007-11-19
IPC分类号： G03F7/30
CPC分类号： G03F7/0048 , G03F7/0035 , G03F7/0397 , G03F7/40
摘要： A photoresist composition and methods using the photoresist composition in multiple exposure/multiple layer processes. The photoresist composition includes a polymer comprising repeat units having a hydroxyl moiety; a photoacid generator; and a solvent. The polymer when formed on a substrate is substantially insoluble to the solvent after heating to a temperature of about 150° C. or greater. One method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second non photoresist layer on the substrate and patterned first photoresist layer. Another method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second photoresist layer on the substrate and patterned first photoresist layer and patternwise exposing the second photoresist layer.
摘要翻译： 光致抗蚀剂组合物和在多次曝光/多层工艺中使用光致抗蚀剂组合物的方法。 光致抗蚀剂组合物包括包含具有羟基部分的重复单元的聚合物; 光致酸发生器; 和溶剂。 形成在基材上的聚合物在加热至约150℃或更高的温度之后基本上不溶于溶剂。 一种方法包括在衬底上形成第一光致抗蚀剂层，图案地暴露第一光致抗蚀剂层，在衬底上形成第二非光致抗蚀剂层并且形成图案化的第一光致抗蚀剂层。 另一种方法包括在衬底上形成第一光致抗蚀剂层，以图形方式暴露第一光致抗蚀剂层，在衬底上形成第二光致抗蚀剂层并图案化的第一光致抗蚀剂层和图案地曝光第二光致抗蚀剂层。
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公开(公告)号：US20100009298A1
公开(公告)日：2010-01-14
申请号：US12170722
申请日：2008-07-10
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li
IPC分类号： G03F7/20
CPC分类号： G03F7/2024
摘要： Methods are presented of forming sub-lithographic patterns using double exposure. One method may include providing a photoresist layer over a layer to be patterned; exposing the photoresist layer using a first mask having a first opening; developing the photoresist layer to transfer the first opening into the photoresist layer, forming a boundary in the photoresist layer about the transferred first opening that is hardened; exposing the photoresist layer using a second mask having a second opening that overlaps the boundary; and developing the photoresist layer to transfer the second opening into the photoresist layer, leaving the boundary, wherein the boundary has a sub-lithographic dimension.
摘要翻译： 提出了使用双重曝光形成亚光刻图案的方法。 一种方法可以包括在待图案化的层上提供光致抗蚀剂层; 使用具有第一开口的第一掩模曝光光致抗蚀剂层; 显影所述光致抗蚀剂层以将所述第一开口转移到所述光致抗蚀剂层中，在所述光致抗蚀剂层周围形成围绕被硬化的转移的第一开口的边界; 使用具有与边界重叠的第二开口的第二掩模曝光光致抗蚀剂层; 并且显影所述光致抗蚀剂层以将所述第二开口转移到所述光致抗蚀剂层中，留下所述边界，其中所述边界具有亚光刻尺寸。
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公开(公告)号：US07560222B2
公开(公告)日：2009-07-14
申请号：US11554877
申请日：2006-10-31
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li , Yi-Hsiung S. Lin
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li , Yi-Hsiung S. Lin
CPC分类号： G03F7/0758 , G03F7/0045
摘要： A resist polymer that has nano-scale patterns located therein that are in the form of sub lithographic hollow pores (or openings) that are oriented in a direction that is substantially perpendicular with that of its major surfaces (top and bottom) is provided. Such a resist polymer having the nano-scale patterns is used as an etch mask transferring nano-scale patterns to an underlying substrate such as, for example, dielectric material. After the transferring of the nano-scale patterns into the substrate, nano-scale voids (or openings) having a width of less than 50 nm are created in the substrate. The presence of the nano-scale voids in a dielectric material lowers the dielectric constant, k, of the original dielectric material. In accordance with an aspect of the present invention, the inventive resist polymer comprises a copolymer that includes a first monomer unit (A) that contains a Si-containing component, and a second monomer unit (B) that contains an organic component, wherein said two monomer units (A and B) have different etch rates.
摘要翻译： 提供具有位于其中的纳米级图案的抗蚀剂聚合物，其为沿与其主表面（顶部和底部）基本垂直的方向取向的亚光刻中空孔（或开口）的形式。 具有纳米尺度图案的这种抗蚀剂聚合物被用作将纳米尺度图案转移到诸如介电材料的下层基底的蚀刻掩模。 在将纳米尺度图案转移到基底中之后，在基底中产生宽度小于50nm的纳米级空隙（或开口）。 电介质材料中纳米尺度空隙的存在降低了原始电介质材料的介电常数k。 根据本发明的一个方面，本发明的抗蚀剂聚合物包括包含含有含Si组分的第一单体单元（A）和含有有机组分的第二单体单元（B）的共聚物，其中所述 两个单体单元（A和B）具有不同的蚀刻速率。
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公开(公告)号：US09449822B2
公开(公告)日：2016-09-20
申请号：US12846020
申请日：2010-07-29
申请人： Wai-Kin Li , Wu-Song Huang , Joy Cheng , Kuang-Jung Chen
发明人： Wai-Kin Li , Wu-Song Huang , Joy Cheng , Kuang-Jung Chen
IPC分类号： H01L21/033
CPC分类号： H01L21/0337 , H01L21/0338
摘要： Embodiments of the present invention provide a method of forming a semiconductor structure. The method includes forming a set of shapes on top of a substrate; applying a layer of copolymer covering the substrate; causing the copolymer to form a plurality of cylindrical blocks both inside and outside the shapes; forming a pattern of contact holes from the plurality of cylindrical blocks; and transferring the pattern of contact holes to the substrate to form the semiconductor structure. In one embodiment, the shapes are rings and forming the set of shapes includes forming a set of rings that are equally and squarely spaced. In another embodiment, causing the copolymer to form the plurality of cylindrical blocks includes forming only one cylindrical block inside each of the rings and only one cylindrical block outside every four (4) squarely neighboring rings.
摘要翻译： 本发明的实施例提供一种形成半导体结构的方法。 该方法包括在衬底的顶部上形成一组形状; 涂覆覆盖基材的共聚物层; 使共聚物在形状内部和外部形成多个圆柱形块; 从所述多个圆柱形块形成接触孔的图案; 并将接触孔的图案转移到衬底以形成半导体结构。 在一个实施例中，形状是环，并且形成一组形状包括形成均匀且平直间隔的一组环。 在另一个实施方案中，使共聚物形成多个圆柱形块包括仅在每个环内形成一个圆柱形块，并且在每四（4）个正方形相邻的环周围仅形成一个圆柱形块。
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8.发明授权Photoresist compositions and methods for shrinking a photoresist critical dimension 失效用于收缩光刻胶临界尺寸的光刻胶组合物和方法公开(公告)号：US08394573B2
公开(公告)日：2013-03-12
申请号：US12883442
申请日：2010-09-16
申请人： Wu-Song Huang , Kuang-Jung Chen , Wai-Kin Li , Sen Liu
发明人： Wu-Song Huang , Kuang-Jung Chen , Wai-Kin Li , Sen Liu
CPC分类号： G03F7/40 , G03F7/0045 , G03F7/0397 , G03F7/405
摘要： A method for reducing a photoresist critical dimension, the method comprising depositing a photoresist film on a substrate, wherein the photoresist film includes a thermal base generator; patterning the photoresist film to form a first patterned film possessing a first critical dimension; depositing a crosslinkable film over the first patterned film; heat-activating the first patterned film, either before or after depositing the crosslinkable film, to release a base in the first patterned film and cause crosslinking in the crosslinkable film in contact with the first patterned film; and developing the crosslinkable film to remove non-crosslinked soluble portions therein to form a second patterned film possessing a reduced critical dimension compared to the first critical dimension.
摘要翻译： 一种降低光致抗蚀剂临界尺寸的方法，所述方法包括在基底上沉积光致抗蚀剂膜，其中光致抗蚀剂膜包括热碱发生器; 图案化光致抗蚀剂膜以形成具有第一临界尺寸的第一图案化膜; 在第一图案化膜上沉积可交联膜; 在沉积可交联膜之前或之后热激活第一图案化膜，以释放第一图案化膜中的碱，并引起与第一图案化膜接触的可交联膜的交联; 并且显影所述可交联膜以除去其中的非交联的可溶部分以形成与第一临界尺寸相比具有降低的临界尺寸的第二图案化膜。
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9.发明申请公开(公告)号：US20090130590A1
公开(公告)日：2009-05-21
申请号：US11942062
申请日：2007-11-19
CPC分类号： G03F7/0048 , G03F7/0035 , G03F7/0397 , G03F7/40
摘要： A photoresist composition and methods using the photoresist composition in multiple exposure/multiple layer processes. The photoresist composition includes a polymer comprising repeat units having a hydroxyl moiety; a photoacid generator; and a solvent. The polymer when formed on a substrate is substantially insoluble to the solvent after heating to a temperature of about 150° C. or greater. One method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second non photoresist layer on the substrate and patterned first photoresist layer. Another method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second photoresist layer on the substrate and patterned first photoresist layer and patternwise exposing the second photoresist layer.
摘要翻译： 光致抗蚀剂组合物和在多次曝光/多层工艺中使用光致抗蚀剂组合物的方法。 光致抗蚀剂组合物包括包含具有羟基部分的重复单元的聚合物; 光致酸发生器; 和溶剂。 形成在基材上的聚合物在加热至约150℃或更高的温度之后基本上不溶于溶剂。 一种方法包括在衬底上形成第一光致抗蚀剂层，图案地暴露第一光致抗蚀剂层，在衬底上形成第二非光致抗蚀剂层并且形成图案化的第一光致抗蚀剂层。 另一种方法包括在衬底上形成第一光致抗蚀剂层，以图形方式暴露第一光致抗蚀剂层，在衬底上形成第二光致抗蚀剂层并图案化的第一光致抗蚀剂层和图案地曝光第二光致抗蚀剂层。
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公开(公告)号：US08609327B2
公开(公告)日：2013-12-17
申请号：US12170722
申请日：2008-07-10
申请人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li
发明人： Kuang-Jung Chen , Wu-Song Huang , Wai-Kin Li
CPC分类号： G03F7/2024
摘要： Methods are presented of forming sub-lithographic patterns using double exposure. One method may include providing a photoresist layer over a layer to be patterned; exposing the photoresist layer using a first mask having a first opening; developing the photoresist layer to transfer the first opening into the photoresist layer, forming a boundary in the photoresist layer about the transferred first opening that is hardened; exposing the photoresist layer using a second mask having a second opening that overlaps the boundary; and developing the photoresist layer to transfer the second opening into the photoresist layer, leaving the boundary, wherein the boundary has a sub-lithographic dimension.
摘要翻译： 提出了使用双重曝光形成亚光刻图案的方法。 一种方法可以包括在待图案化的层上提供光致抗蚀剂层; 使用具有第一开口的第一掩模曝光光致抗蚀剂层; 显影所述光致抗蚀剂层以将所述第一开口转移到所述光致抗蚀剂层中，在所述光致抗蚀剂层周围形成围绕被硬化的转移的第一开口的边界 使用具有与边界重叠的第二开口的第二掩模曝光光致抗蚀剂层; 并且显影所述光致抗蚀剂层以将所述第二开口转移到所述光致抗蚀剂层中，留下所述边界，其中所述边界具有亚光刻尺寸。
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