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    Patterning nanowires on surfaces for fabricating nanoscale electronic devices
    72.
    发明申请
    Patterning nanowires on surfaces for fabricating nanoscale electronic devices 审中-公开
    在纳米级电子器件制造表面上形成纳米线

    公开(公告)号：US20070269924A1

    公开(公告)日：2007-11-22

    申请号：US11435886

    申请日：2006-05-18

    申请人： Marcos Gomez ,  Frauke Richter ,  Peter Erk ,  Zhenan Bao ,  Shuhong Liu

    发明人： Marcos Gomez ,  Frauke Richter ,  Peter Erk ,  Zhenan Bao ,  Shuhong Liu

    IPC分类号： H01L21/44

    CPC分类号： H01L51/0004 ,  B81C1/0038 ,  H01L51/0036 ,  H01L51/0508

    摘要： The present invention relates to a method of depositing nanowires on the surface of a substrate, comprising the steps of: contacting defined regions of the substrate with at least one compound (C1) capable of binding to the surface of the substrate and of binding the nanowires to provide a pattern of binding sites on the surface of the substrate and/or contacting defined regions of the substrate with at least one compound (C2) capable of binding to the surface of the substrate and preventing the binding of nanowires to provide a pattern of non-binding sites on the surface of the substrate, and contacting the surface of the substrate with a suspension of nanowires in a liquid medium to enable at least a portion of the applied nanowires to bind to at least a portion of the surface of the substrate covered with (C1) and/or not covered with (C2).

    摘要翻译： 本发明涉及一种在衬底的表面上沉积纳米线的方法，包括以下步骤：将限定的衬底区域与至少一种能够结合衬底表面并结合纳米线的化合物（C1）接触 以在衬底的表面上提供结合位点的图案和/或使衬底的限定区域与至少一种能够结合衬底表面的化合物（C2）接触并防止纳米线结合以提供图案 在衬底的表面上的非结合位点，以及使衬底的表面与液体介质中的纳米线的悬浮液接触，以使至少一部分所施加的纳米线结合至衬底的至少一部分表面 覆盖（C1）和/或未覆盖（C2）。

    METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS
    73.
    发明申请
    METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS 审中-公开
    用于生产有机场效应晶体管的方法

    公开(公告)号：US20070259475A1

    公开(公告)日：2007-11-08

    申请号：US11619538

    申请日：2007-01-03

    申请人： Martin Konemann ,  Peter Erk ,  Mang-Mang Ling ,  Zhenan Bao

    发明人： Martin Konemann ,  Peter Erk ,  Mang-Mang Ling ,  Zhenan Bao

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0053 ,  C09B5/62 ,  H01L51/0025 ,  H01L51/0508

    摘要： A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R1, R2, R3 and R4 are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue, Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue, Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, one of the residues Z3 and Z4 may be a NRd group, where Rb and Rd together are a bridging group having 2 to 5 atoms between the terminal bonds.

    摘要翻译： 一种制造有机场效应晶体管的方法，包括以下步骤：a）提供包括位于所述衬底上的栅极结构，源电极和漏极的衬底，以及b）将n型有机半导体化合物施加到 栅极结构，源电极和漏电极所在的衬底的区域，其中n型有机半导体化合物选自式I化合物，其中R 1， R 2，R 3和R 4独立地是氢，氯或溴，条件是这些基团中的至少一个不是 氢，Y 1是O或NR a，其中R a是氢或有机残基，Y 2， 是O或NR b，其中R b是氢或有机残基，Z 1，Z 2， Z 3和Z 4是O，其中，在Y 1是NR a a的情况下， 残基Z 1和Z 2中的一个可以是NR c，其中R a， 另一方面，在末端键之间具有2〜5个原子的桥连基团，其中，在Y 2的情况下，NR 2是其中之一， 残基Z 3和Z 4可以是NR d D基团，其中R b和R 4都是 一起是在末端键之间具有2至5个原子的桥连基团。

    Patterning crystalline compounds on surfaces
    74.
    发明申请
    Patterning crystalline compounds on surfaces 失效
    在表面上形成结晶化合物

    公开(公告)号：US20070190783A1

    公开(公告)日：2007-08-16

    申请号：US11353934

    申请日：2006-02-15

    申请人： Marcos Gomez ,  Peter Erk ,  Frauke Richter ,  Zhenan Bao ,  Shuhong Liu

    发明人： Marcos Gomez ,  Peter Erk ,  Frauke Richter ,  Zhenan Bao ,  Shuhong Liu

    IPC分类号： H01L21/44

    CPC分类号： H01L51/0003 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L51/0019 ,  H01L51/0068 ,  H01L51/0533 ,  H01L51/0545

    摘要： A method of patterning the surface of a substrate with at least one organic semiconducting compound, comprising the steps of: (a) providing a stamp having a surface including a plurality of indentations formed therein defining an indentation pattern, said indentations being contiguous with a stamping surface and defining a stamping pattern, (b) coating said stamping surface with at least one compound (C1) capable of binding to the surface of the substrate and of binding at least one organic semiconducting compound (S), (c) contacting at least a portion of the surface of a substrate with said stamping surface to allow deposition of said compound (C1) on the substrate, (d) removing said stamping surface to provide a pattern of binding sites on the surface of the substrate, (e) applying a plurality of crystallites of the organic semiconducting compound (S) to the surface of the substrate to enable at least a portion of the applied crystallites to bind to at least a portion of the binding sites on the surface of the substrate.

    摘要翻译： 一种利用至少一种有机半导体化合物对衬底表面进行图案化的方法，包括以下步骤：（a）提供具有表面的印模，所述印模具有形成在其中的多个凹口，所述凹陷限定凹陷图案，所述压痕与冲压 表面和限定冲压图案，（b）用至少一种能够结合至基材表面并结合至少一种有机半导体化合物（S）的化合物（C1）涂覆所述冲压表面，（c）至少接触 具有所述冲压表面的衬底的表面的一部分，以允许将所述化合物（C1）沉积在衬底上，（d）去除所述冲压表面以提供衬底表面上的结合位点图案，（e）施加 多个微晶的有机半导体化合物（S）到基底的表面，使得至少一部分所施加的微晶能够结合至少一部分结合物 基材表面的部位。