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    Method for producing organic field-effect transistors
    3.
    发明授权
    Method for producing organic field-effect transistors 有权
    制造有机场效应晶体管的方法

    公开(公告)号：US07910736B2

    公开(公告)日：2011-03-22

    申请号：US11744611

    申请日：2007-05-04

    申请人： Martin Koenemann ,  Peter Erk ,  Zhenan Bao ,  Mang-Mang Ling

    发明人： Martin Koenemann ,  Peter Erk ,  Zhenan Bao ,  Mang-Mang Ling

    IPC分类号： C07D471/02 ,  H01L51/50 ,  H01L31/112

    CPC分类号： H01L51/0053 ,  C07D471/06 ,  C07D471/16 ,  C07D493/06 ,  H01L27/283 ,  H01L51/0545 ,  H01L51/0558

    摘要： A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R1, R2, R3and R4are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue, Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue, Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, one of the residues Z3 and Z4 may be a NRd group, where Rb and Rd together are a bridging group having 2 to 5 atoms between the terminal bonds.

    摘要翻译： 一种制造有机场效应晶体管的方法，包括以下步骤：a）提供包括位于所述衬底上的栅极结构，源电极和漏极的衬底，以及b）将n型有机半导体化合物施加到 所述栅极结构，所述源极电极和所述漏电极所在的衬底的区域，其中所述n型有机半导体化合物选自由式I化合物组成的组，其中R 1，R 2，R 3和R 4独立地为氢， 氯或溴，条件是这些基团中的至少一个不是氢，Y1是O或NRa，其中Ra是氢或有机残基，Y2是O或NRb，其中Rb是氢或有机残基，Z1， Z2，Z3和Z4是O，其中在Y1是NRa的情况下，残基Z1和Z2之一可以是NRc基团，其中R a和R c一起是在末端键之间具有2至5个原子的桥连基团， 其中，在Y2为NRb的情况下， 残基Z3和Z4之一可以是NRd基团，其中Rb和Rd一起是在末端键之间具有2至5个原子的桥连基团。

    METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS
    4.
    发明申请
    METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS 审中-公开
    用于生产有机场效应晶体管的方法

    公开(公告)号：US20080090325A1

    公开(公告)日：2008-04-17

    申请号：US11550229

    申请日：2006-10-17

    申请人： Martin KOENEMANN ,  Peter Erk ,  Zhenan Bao ,  Mang Mang Ling

    发明人： Martin KOENEMANN ,  Peter Erk ,  Zhenan Bao ,  Mang Mang Ling

    IPC分类号： H01L51/40 ,  C07D471/02 ,  C07D471/22

    CPC分类号： C07D493/06 ,  C07D471/06 ,  H01L27/283 ,  H01L51/0053 ,  H01L51/0545

    摘要： A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R1, R2, R3 and R4 are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue, Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue, Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, one of the residues Z3 and Z4 may be a NRd group, where Rb and Rd together are a bridging group having 2 to 5 atoms between the terminal bonds.

    摘要翻译： 一种制造有机场效应晶体管的方法，包括以下步骤：a）提供包括位于所述衬底上的栅极结构，源电极和漏极的衬底，以及b）将n型有机半导体化合物施加到 栅极结构，源电极和漏电极所在的衬底的区域，其中n型有机半导体化合物选自式I化合物，其中R 1， R 2，R 3和R 4独立地是氢，氯或溴，条件是这些基团中的至少一个不是 氢，Y 1是O或NR a，其中R a是氢或有机残基，Y 2， 是O或NR b，其中R b是氢或有机残基，Z 1，Z 2， Z 3和Z 4是O，其中，在Y 1是NR a a的情况下， 残基Z 1和Z 2中的一个可以是NR c，其中R a， 另一方面，在末端键之间具有2〜5个原子的桥连基团，其中，在Y 2的情况下，NR 2是其中之一， 残基Z 3和Z 4可以是NR d D基团，其中R b和R 4都是 一起是在末端键之间具有2至5个原子的桥连基团。

    METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS
    5.
    发明申请
    METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS 有权

    公开(公告)号：US20080017850A1

    公开(公告)日：2008-01-24

    申请号：US11744611

    申请日：2007-05-04

    申请人： Martin Koenemann ,  Peter Erk ,  Zhenan Bao ,  Mang-Mang Ling

    发明人： Martin Koenemann ,  Peter Erk ,  Zhenan Bao ,  Mang-Mang Ling

    IPC分类号： H01L51/30 ,  C07D471/08 ,  H01L51/40 ,  C07D471/22

    CPC分类号： H01L51/0053 ,  C07D471/06 ,  C07D471/16 ,  C07D493/06 ,  H01L27/283 ,  H01L51/0545 ,  H01L51/0558

    摘要： A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R1, R2, R3 and R4 are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue, Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue, Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, one of the residues Z3 and Z4 may be a NRd group, where Rb and Rd together are a bridging group having 2 to 5 atoms between the terminal bonds.

    METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS
    7.
    发明申请
    METHOD FOR PRODUCING ORGANIC FIELD-EFFECT TRANSISTORS 审中-公开
    用于生产有机场效应晶体管的方法

    公开(公告)号：US20070259475A1

    公开(公告)日：2007-11-08

    申请号：US11619538

    申请日：2007-01-03

    申请人： Martin Konemann ,  Peter Erk ,  Mang-Mang Ling ,  Zhenan Bao

    发明人： Martin Konemann ,  Peter Erk ,  Mang-Mang Ling ,  Zhenan Bao

    IPC分类号： H01L51/40

    CPC分类号： H01L51/0053 ,  C09B5/62 ,  H01L51/0025 ,  H01L51/0508

    摘要： A method for producing an organic field-effect transistor, comprising the steps of: a) providing a substrate comprising a gate structure, a source electrode and a drain electrode located on the substrate, and b) applying an n-type organic semiconducting compound to the area of the substrate where the gate structure, the source electrode and the drain electrode are located, wherein the n-type organic semiconducting compound is selected from the group consisting of compounds of the formula I wherein R1, R2, R3 and R4 are independently hydrogen, chlorine or bromine, with the proviso that at least one of these radicals is not hydrogen, Y1 is O or NRa, wherein Ra is hydrogen or an organyl residue, Y2 is O or NRb, wherein Rb is hydrogen or an organyl residue, Z1, Z2, Z3 and Z4 are O, where, in the case that Y1 is NRa, one of the residues Z1 and Z2 may be a NRc group, where Ra and Rc together are a bridging group having 2 to 5 atoms between the terminal bonds, where, in the case that Y2 is NRb, one of the residues Z3 and Z4 may be a NRd group, where Rb and Rd together are a bridging group having 2 to 5 atoms between the terminal bonds.

    摘要翻译： 一种制造有机场效应晶体管的方法，包括以下步骤：a）提供包括位于所述衬底上的栅极结构，源电极和漏极的衬底，以及b）将n型有机半导体化合物施加到 栅极结构，源电极和漏电极所在的衬底的区域，其中n型有机半导体化合物选自式I化合物，其中R 1， R 2，R 3和R 4独立地是氢，氯或溴，条件是这些基团中的至少一个不是 氢，Y 1是O或NR a，其中R a是氢或有机残基，Y 2， 是O或NR b，其中R b是氢或有机残基，Z 1，Z 2， Z 3和Z 4是O，其中，在Y 1是NR a a的情况下， 残基Z 1和Z 2中的一个可以是NR c，其中R a， 另一方面，在末端键之间具有2〜5个原子的桥连基团，其中，在Y 2的情况下，NR 2是其中之一， 残基Z 3和Z 4可以是NR d D基团，其中R b和R 4都是 一起是在末端键之间具有2至5个原子的桥连基团。

    Patterning crystalline compounds on surfaces
    8.
    发明授权
    Patterning crystalline compounds on surfaces 失效
    在表面上形成结晶化合物

    公开(公告)号：US07795145B2

    公开(公告)日：2010-09-14

    申请号：US11353934

    申请日：2006-02-15

    申请人： Marcos Gomez ,  Peter Erk ,  Frauke Richter ,  Zhenan Bao ,  Shuhong Liu

    发明人： Marcos Gomez ,  Peter Erk ,  Frauke Richter ,  Zhenan Bao ,  Shuhong Liu

    IPC分类号： H01L21/44

    CPC分类号： H01L51/0003 ,  B82Y10/00 ,  B82Y30/00 ,  B82Y40/00 ,  G03F7/0002 ,  H01L51/0019 ,  H01L51/0068 ,  H01L51/0533 ,  H01L51/0545

    摘要： A method of patterning the surface of a substrate with at least one organic semiconducting compound including: (a) providing a stamp having a surface including a plurality of indentations formed therein defining an indentation pattern contiguous with a stamping surface and defining a stamping pattern, (b) coating the stamping surface with at least one compound (C1) capable of binding to the surface of the substrate and at least one organic semiconducting compound (S), (c) contacting at least a portion of the surface of a substrate with the stamping surface to allow deposition of the compound (C1) on the substrate, (d) removing the stamping surface to provide a pattern of binding sites on the surface of the substrate, (e) applying a plurality of crystallites of the organic semiconducting compound (S) to the surface of the substrate to bind at least a portion of the applied crystallites to the binding sites on the surface of the substrate.

    摘要翻译： 一种利用至少一种有机半导体化合物对衬底的表面进行图案化的方法，包括：（a）提供具有表面的印模，所述表面包括形成在其中的多个凹口，所述压痕限定与冲压表面邻接的压痕图案并限定冲压图案（ b）用至少一种能够结合到基底表面的化合物（C1）和至少一种有机半导体化合物（S）涂覆冲压表面，（c）将基底表面的至少一部分与 冲压表面以允许化合物（C1）沉积在基底上，（d）去除冲压表面以在基底表面上提供结合位点的图案，（e）施加多个有机半导体化合物的微晶（ S）到基底的表面以将至少一部分施加的微晶结合到基底表面上的结合位点。

    Patterning nanowires on surfaces for fabricating nanoscale electronic devices
    10.
    发明申请
    Patterning nanowires on surfaces for fabricating nanoscale electronic devices 审中-公开
    在纳米级电子器件制造表面上形成纳米线

    公开(公告)号：US20070269924A1

    公开(公告)日：2007-11-22

    申请号：US11435886

    申请日：2006-05-18

    申请人： Marcos Gomez ,  Frauke Richter ,  Peter Erk ,  Zhenan Bao ,  Shuhong Liu

    发明人： Marcos Gomez ,  Frauke Richter ,  Peter Erk ,  Zhenan Bao ,  Shuhong Liu

    IPC分类号： H01L21/44

    CPC分类号： H01L51/0004 ,  B81C1/0038 ,  H01L51/0036 ,  H01L51/0508

    摘要： The present invention relates to a method of depositing nanowires on the surface of a substrate, comprising the steps of: contacting defined regions of the substrate with at least one compound (C1) capable of binding to the surface of the substrate and of binding the nanowires to provide a pattern of binding sites on the surface of the substrate and/or contacting defined regions of the substrate with at least one compound (C2) capable of binding to the surface of the substrate and preventing the binding of nanowires to provide a pattern of non-binding sites on the surface of the substrate, and contacting the surface of the substrate with a suspension of nanowires in a liquid medium to enable at least a portion of the applied nanowires to bind to at least a portion of the surface of the substrate covered with (C1) and/or not covered with (C2).

    摘要翻译： 本发明涉及一种在衬底的表面上沉积纳米线的方法，包括以下步骤：将限定的衬底区域与至少一种能够结合衬底表面并结合纳米线的化合物（C1）接触 以在衬底的表面上提供结合位点的图案和/或使衬底的限定区域与至少一种能够结合衬底表面的化合物（C2）接触并防止纳米线结合以提供图案 在衬底的表面上的非结合位点，以及使衬底的表面与液体介质中的纳米线的悬浮液接触，以使至少一部分所施加的纳米线结合至衬底的至少一部分表面 覆盖（C1）和/或未覆盖（C2）。