Patterning crystalline compounds on surfaces
    1.
    发明授权
    Patterning crystalline compounds on surfaces 失效
    在表面上形成结晶化合物

    公开(公告)号:US07795145B2

    公开(公告)日:2010-09-14

    申请号:US11353934

    申请日:2006-02-15

    IPC分类号: H01L21/44

    摘要: A method of patterning the surface of a substrate with at least one organic semiconducting compound including: (a) providing a stamp having a surface including a plurality of indentations formed therein defining an indentation pattern contiguous with a stamping surface and defining a stamping pattern, (b) coating the stamping surface with at least one compound (C1) capable of binding to the surface of the substrate and at least one organic semiconducting compound (S), (c) contacting at least a portion of the surface of a substrate with the stamping surface to allow deposition of the compound (C1) on the substrate, (d) removing the stamping surface to provide a pattern of binding sites on the surface of the substrate, (e) applying a plurality of crystallites of the organic semiconducting compound (S) to the surface of the substrate to bind at least a portion of the applied crystallites to the binding sites on the surface of the substrate.

    摘要翻译: 一种利用至少一种有机半导体化合物对衬底的表面进行图案化的方法,包括:(a)提供具有表面的印模,所述表面包括形成在其中的多个凹口,所述压痕限定与冲压表面邻接的压痕图案并限定冲压图案( b)用至少一种能够结合到基底表面的化合物(C1)和至少一种有机半导体化合物(S)涂覆冲压表面,(c)将基底表面的至少一部分与 冲压表面以允许化合物(C1)沉积在基底上,(d)去除冲压表面以在基底表面上提供结合位点的图案,(e)施加多个有机半导体化合物的微晶( S)到基底的表面以将至少一部分施加的微晶结合到基底表面上的结合位点。

    Patterning nanowires on surfaces for fabricating nanoscale electronic devices
    2.
    发明申请
    Patterning nanowires on surfaces for fabricating nanoscale electronic devices 审中-公开
    在纳米级电子器件制造表面上形成纳米线

    公开(公告)号:US20070269924A1

    公开(公告)日:2007-11-22

    申请号:US11435886

    申请日:2006-05-18

    IPC分类号: H01L21/44

    摘要: The present invention relates to a method of depositing nanowires on the surface of a substrate, comprising the steps of: contacting defined regions of the substrate with at least one compound (C1) capable of binding to the surface of the substrate and of binding the nanowires to provide a pattern of binding sites on the surface of the substrate and/or contacting defined regions of the substrate with at least one compound (C2) capable of binding to the surface of the substrate and preventing the binding of nanowires to provide a pattern of non-binding sites on the surface of the substrate, and contacting the surface of the substrate with a suspension of nanowires in a liquid medium to enable at least a portion of the applied nanowires to bind to at least a portion of the surface of the substrate covered with (C1) and/or not covered with (C2).

    摘要翻译: 本发明涉及一种在衬底的表面上沉积纳米线的方法,包括以下步骤:将限定的衬底区域与至少一种能够结合衬底表面并结合纳米线的化合物(C1)接触 以在衬底的表面上提供结合位点的图案和/或使衬底的限定区域与至少一种能够结合衬底表面的化合物(C2)接触并防止纳米线结合以提供图案 在衬底的表面上的非结合位点,以及使衬底的表面与液体介质中的纳米线的悬浮液接触,以使至少一部分所施加的纳米线结合至衬底的至少一部分表面 覆盖(C1)和/或未覆盖(C2)。

    Patterning crystalline compounds on surfaces
    3.
    发明申请
    Patterning crystalline compounds on surfaces 失效
    在表面上形成结晶化合物

    公开(公告)号:US20070190783A1

    公开(公告)日:2007-08-16

    申请号:US11353934

    申请日:2006-02-15

    IPC分类号: H01L21/44

    摘要: A method of patterning the surface of a substrate with at least one organic semiconducting compound, comprising the steps of: (a) providing a stamp having a surface including a plurality of indentations formed therein defining an indentation pattern, said indentations being contiguous with a stamping surface and defining a stamping pattern, (b) coating said stamping surface with at least one compound (C1) capable of binding to the surface of the substrate and of binding at least one organic semiconducting compound (S), (c) contacting at least a portion of the surface of a substrate with said stamping surface to allow deposition of said compound (C1) on the substrate, (d) removing said stamping surface to provide a pattern of binding sites on the surface of the substrate, (e) applying a plurality of crystallites of the organic semiconducting compound (S) to the surface of the substrate to enable at least a portion of the applied crystallites to bind to at least a portion of the binding sites on the surface of the substrate.

    摘要翻译: 一种利用至少一种有机半导体化合物对衬底表面进行图案化的方法,包括以下步骤:(a)提供具有表面的印模,所述印模具有形成在其中的多个凹口,所述凹陷限定凹陷图案,所述压痕与冲压 表面和限定冲压图案,(b)用至少一种能够结合至基材表面并结合至少一种有机半导体化合物(S)的化合物(C1)涂覆所述冲压表面,(c)至少接触 具有所述冲压表面的衬底的表面的一部分,以允许将所述化合物(C1)沉积在衬底上,(d)去除所述冲压表面以提供衬底表面上的结合位点图案,(e)施加 多个微晶的有机半导体化合物(S)到基底的表面,使得至少一部分所施加的微晶能够结合至少一部分结合物 基材表面的部位。

    INLINE INSPECTION OF THE CONTACT BETWEEN CONDUCTIVE TRACES AND SUBSTRATE FOR HIDDEN DEFECTS USING WHITE LIGHT INTERFEROMETER WITH TILTED OBJECTIVE LENS
    5.
    发明申请
    INLINE INSPECTION OF THE CONTACT BETWEEN CONDUCTIVE TRACES AND SUBSTRATE FOR HIDDEN DEFECTS USING WHITE LIGHT INTERFEROMETER WITH TILTED OBJECTIVE LENS 有权
    使用带有倾斜目标镜头的白光干涉仪对导电导线和底板之间的接触进行隐藏检测的在线检查

    公开(公告)号:US20150276375A1

    公开(公告)日:2015-10-01

    申请号:US14229446

    申请日:2014-03-28

    IPC分类号: G01B9/02 G01B11/30

    摘要: Embodiments include devices, systems and processes for using a white light interferometer (WLI) microscope with a tilted objective lens to perform in-line monitoring of both resist footing defects and conductive trace undercut defects. The defects may be detected at the interface between dry film resist (DFR) footings and conductive trace footing formed on insulating layer top surfaces of a packaging substrate. Such footing and undercut defects may other wise be considered “hidden defects”. Using the WLI microscope with a tilted objective lens provides a high-throughput and low cost metrology and tool for non-destructive, non-contact, in-line monitoring.

    摘要翻译: 实施例包括使用具有倾斜物镜的白光干涉仪(WLI)显微镜的装置,系统和工艺,以执行两种抗蚀剂基础缺陷和导电迹线底切缺陷的在线监测。 可以在干膜抗蚀剂(DFR)底脚与形成在包装基材的绝缘层顶表面上的导电迹线基底之间的界面处检测到缺陷。 这种基础和底切缺陷可能被认为是“隐藏的缺陷”。 使用具有倾斜物镜的WLI显微镜为非破坏性,非接触式在线监测提供了高吞吐量和低成本的计量和工具。

    SINGLE-CRYSTAL ORGANIC SEMICONDUCTOR MATERIALS AND APPROACHES THEREFOR
    7.
    发明申请
    SINGLE-CRYSTAL ORGANIC SEMICONDUCTOR MATERIALS AND APPROACHES THEREFOR 审中-公开
    单晶有机半导体材料及其应用

    公开(公告)号:US20080134961A1

    公开(公告)日:2008-06-12

    申请号:US11932057

    申请日:2007-10-31

    IPC分类号: C30B23/00 H01L51/00

    摘要: Patterned single crystals and related devices are facilitated. According to an example embodiment of the present invention, organic semiconducting single-crystals are manufactured using a plurality of surface regions on a substrate. The diffusivity and/or the rate of desorption is controlled at each surface region and at the substrate to grow at least one organic semiconducting single crystal at each surface region from a vapor-phase organic material. This control is effected, for example, before and/or during the introduction of vapor-phase organic material to the surface regions. In some embodiments, the surface regions include an organic film such as octadecyltriethoxysilane (OTS), and in other embodiments, the surface regions include carbon nanotube bundles, either of which can be implemented to exhibit a surface roughness and/or other characteristics that facilitate selective crystal nucleation.

    摘要翻译: 图形化的单晶和相关器件便利。 根据本发明的示例性实施例,使用在基板上的多个表面区域来制造有机半导体单晶。 在每个表面区域和底物处控制扩散率和/或解吸速率,以在气相有机材料的每个表面区域生长至少一个有机半导体单晶。 该控制例如在将气相有机材料引入表面区域之前和/或期间进行。 在一些实施方案中,表面区域包括诸如十八烷基三乙氧基硅烷(OTS)的有机膜,并且在其它实施方案中,表面区域包括碳纳米管束,其中任一种可以被实现为表现出表面粗糙度和/或促进选择性的其他特性 晶体成核。

    NONDESTRUCTIVE OPTICAL DETECTION OF TRACE UNDERCUT, WIDTH AND THICKNESS
    8.
    发明申请
    NONDESTRUCTIVE OPTICAL DETECTION OF TRACE UNDERCUT, WIDTH AND THICKNESS 审中-公开
    非线性光学检测跟踪深度,宽度和厚度

    公开(公告)号:US20170059303A1

    公开(公告)日:2017-03-02

    申请号:US14840883

    申请日:2015-08-31

    IPC分类号: G01B11/06

    摘要: Some example forms relate to a method of nondestructively measuring a geometry of an electrical component on a substrate. The method includes directing light at the electrical component. The light is at an original intensity. The method further includes measuring light that is reflected off of the electrical component. The reflected light includes undiffracted light and diffracted light. The diffracted light is at a diffracted intensity. The method further includes determining a ratio of diffracted intensity to original intensity and utilizing the ratio to determine a geometry of the electrical component.

    摘要翻译: 一些示例形式涉及非破坏性地测量衬底上的电气部件的几何形状的方法。 该方法包括将光引导到电气部件。 光线处于原始强度。 该方法还包括测量从电气部件反射的光。 反射光包括未衍射的光和衍射光。 衍射光的衍射强度。 该方法还包括确定衍射强度与原始强度的比率,并利用该比率来确定电气部件的几何形状。