Surface shape measuring apparatus
    78.
    发明授权
    Surface shape measuring apparatus 有权
    表面形状测量装置

    公开(公告)号:US09310190B2

    公开(公告)日:2016-04-12

    申请号:US14240669

    申请日:2012-07-27

    摘要: In related art, consideration is not given to that a spatial distribution of scattered light changes in various direction such as forward/backward/sideways according to a difference in micro roughness. Particularly, although a step-terrace structure appearing on an epitaxial growth wafer produces anisotropy in the scattered light distribution, consideration is not given to this point in the related art. The invention includes a process in which light is illuminated to a sample surface, plural detection optical systems mutually different in directions of optical axes detect a spatial distribution of scattered light, and a spatial frequency spectrum of the sample surface is calculated.

    摘要翻译: 在现有技术中,不考虑散射光的空间分布根据微粗糙度的差异而在各种方向如前后/侧面变化。 特别地,虽然出现在外延生长晶片上的台阶平台结构在散射光分布中产生各向异性,但是在现有技术中没有考虑到这一点。 本发明包括将光照射到样品表面的方法,在光轴方向上彼此不同的多个检测光学系统检测散射光的空间分布,并且计算样品表面的空间频谱。

    Inspection method and inspection device
    79.
    发明授权
    Inspection method and inspection device 有权
    检验方法和检验装置

    公开(公告)号:US09007581B2

    公开(公告)日:2015-04-14

    申请号:US13621121

    申请日:2012-09-15

    摘要: An inspection method and an inspection device, or apparatus each capable of conducting composition analysis of a defect detected by elastic or stokes scattered light, an inspection surface or defect on the surface of the inspection surface, or a defect on the surface of the inspection object and its internal composition. A surface inspection method for optically detecting elastic or stokes scattering or inelastic or anti-stokes scattered light from inside the surface of the inspection object, for detecting existence of defects of the inspection object and features of the defects, for detecting positions of the detected defects on the surface of the inspection object, classifying and analyzing the detected defects in accordance with their features on the basis of the positions of the defects and the features of the defects or the classification result of the defects.

    摘要翻译: 检查方法和检查装置或装置,其能够对由检查表面的弹性或sto kes散射光,检查面或缺陷检测到的缺陷或检​​查对象的表面上的缺陷进行组成分析 及其内在组成。 一种表面检查方法,用于光学检测来自检查对象的表面内的弹性或斯托克斯散射或非弹性或反射散射光,用于检测检查对象的缺陷的存在和缺陷的特征,用于检测检测到的缺陷的位置 在检查对象的表面上,根据缺陷的位置和缺陷的特征或缺陷的分类结果,根据其特征对检测到的缺陷进行分类和分析。

    Surface shape measuring apparatus
    80.
    发明授权
    Surface shape measuring apparatus 有权
    表面形状测量装置

    公开(公告)号:US08958076B2

    公开(公告)日:2015-02-17

    申请号:US13993630

    申请日:2011-11-30

    摘要: Surface states have traditionally been measured with apparatuses such as an atomic force microscope (AFM), and these measurements have been high in resolution but low in speed. In conventional apparatuses for inspecting the foreign matter sticking to a wafer surface, and for inspecting defects present on the wafer surface, the inspection has had a tendency to be restricted in a region of the highest noise level arising from the roughness of the surface, the surface state, and/or crystal orientations, and thereby to reduce detection sensitivity in a region of lower noise levels. In these conventional techniques, signal processing of the light scattered from the object to be inspected has been based only upon the intensity of the light.This invention acquires three-dimensional data by, during such signal processing, adding detection intervals and the frequency of detection, as well as the intensity of light. The invention measures surface roughness of a target object (wafer) by creating region-specific three-dimensional maps from the three-dimensional data, then estimating the surface state of the wafer from analytical results, processing this estimated surface state as physical quantities, and analyzing the data.

    摘要翻译: 传统上用诸如原子力显微镜(AFM)的装置测量表面状态,并且这些测量结果分辨率高,而且速度低。 在用于检查粘附于晶片表面的异物和用于检查存在于晶片表面上的缺陷的常规设备中,检查具有在表面粗糙度产生的最高噪声水平的区域中被限制的倾向, 表面状态和/或晶体取向,从而降低噪声水平较低的区域的检测灵敏度。 在这些常规技术中,从被检查物体散射的光的信号处理仅基于光的强度。 本发明在这种信号处理期间通过增加检测间隔和检测频率以及光的强度来获取三维数据。 本发明通过从三维数据中创建区域特定的三维图来测量目标物体(晶片)的表面粗糙度,然后从分析结果估计晶片的表面状态,将该估计的表面状态处理为物理量,以及 分析数据。