摘要:
An apparatus for inspecting particles and/or pattern defects of an object under inspection. Data processing means obtains information on size of the particles and/or the pattern defects from an intensity of the scattered light detected by the light detecting means by referring to a relationship between an intensity of scattered light from a standard particle and a size of the standard particle, and using a calibration coefficient for compensating for a change in intensity of the light of the illuminating means from a predetermined intensity.
摘要:
A defect inspection apparatus includes an illumination optical unit for obliquely illuminating an object with a slit-like shaped laser, a first detection optical unit for detecting a first image formed by light reflected from the object by the illumination of the slit-like shaped laser and reflected in a first direction substantially normal to a surface of the object, a second detection optical unit for detecting a second image formed by light reflected from the object by the illumination of the slit-like shaped laser and reflected in a second direction inclined to the normal direction to the surface of the object, an image signal processing unit which processes a signal outputted from the first detection optical unit and a signal outputted from the second detection optical unit, and an output unit which outputs information processed by the image signal processing unit.
摘要:
A method for detecting defects on a specimen includes mounting a specimen on a table with which is movable, obliquely projecting a laser as a line onto a surface of the specimen, detecting with an image sensor an image of light formed by light reflected from the specimen and passed through a filter which blocks scattered light resulting from repetitive patterns formed on the specimen, processing a signal outputted from the image sensor to extract defects of the specimen, and a displaying information of defects extracted by the signal processor.
摘要:
Conventionally, a particle/defect inspection apparatus outputs a total number of detected particles/defects as the result of detection. For taking countermeasures to failures in manufacturing processes, the particles/defects detected by the inspection apparatus are analyzed. Since the inspection apparatus outputs a large number of detected particles/defects, an immense time is required for analyzing the detected particles/defects, resulting in a delay in taking countermeasures to a failure in the manufacturing processes. In the present invention, an apparatus for optically inspecting particles or defects relates a particle or defect size to a cause of failure in an inspection result. A data processing circuit points out a cause of failure from the statistics on the inspection result, and displays information on the inspection result. A failure analysis is conducted by setting a threshold for identifying a failure in each of regions on a semiconductor device or the like to statistically evaluate detected particles.
摘要:
A defect inspection method includes radiating an illumination slit-shaped beam having lights substantially parallel to a longitudinal direction to a substrate having circuit patterns in a direction inclined at a predetermined gradient relative to the direction of a line normal to the substrate and inclined at a predetermined gradient on a surface with respect to a group of main straight lines of the circuit patterns with its longitudinal direction oriented almost perpendicularly to a direction of a movement of the substrate. Scattered light reflected by a defect such as a foreign particle existing on the illuminated substrate is received and converted into a detection signal by using an image sensor, and defect judging is effected of an extracted a signal indicating a defect such as a foreign particle on the basis of the detection signal output.
摘要:
A system and method of inspecting a foreign particle or a defect on a sample are provided. Such a method comprises irradiating light to an object to be inspected; detecting reflected light or scattered light from the object to be inspected irradiated with the light; detecting a signal of the foreign particle or the defect from the detected signal; providing information related to a size of the foreign particle or the defect from the signal of the detected foreign particle or the defect; and outputting information on a display screen a distribution of the size of the foreign particle or defect with information indicating a cause of the distribution of the foreign particle or defect.
摘要:
In a defect inspecting apparatus, the strength of a fatal defect signal decreases due to miniaturization. Thus, in order to assure a high SN ratio, it is necessary to reduce noises caused by scattered light from a wafer. Roughness of a pattern edge and surface roughness which serve as a scattered-light source are spread over the entire wafer. The present invention has discovered the fact that reduction of an illuminated area is a technique effective for decreasing noises. That is to say, the present invention has discovered the fact that creation of an illuminated area having a spot shape and reduction of the dimension of a spot beam are effective. A plurality of temporally and spatially divided spot beams are radiated to the wafer serving as a sample.
摘要:
In related art, consideration is not given to that a spatial distribution of scattered light changes in various direction such as forward/backward/sideways according to a difference in micro roughness. Particularly, although a step-terrace structure appearing on an epitaxial growth wafer produces anisotropy in the scattered light distribution, consideration is not given to this point in the related art. The invention includes a process in which light is illuminated to a sample surface, plural detection optical systems mutually different in directions of optical axes detect a spatial distribution of scattered light, and a spatial frequency spectrum of the sample surface is calculated.
摘要:
An inspection method and an inspection device, or apparatus each capable of conducting composition analysis of a defect detected by elastic or stokes scattered light, an inspection surface or defect on the surface of the inspection surface, or a defect on the surface of the inspection object and its internal composition. A surface inspection method for optically detecting elastic or stokes scattering or inelastic or anti-stokes scattered light from inside the surface of the inspection object, for detecting existence of defects of the inspection object and features of the defects, for detecting positions of the detected defects on the surface of the inspection object, classifying and analyzing the detected defects in accordance with their features on the basis of the positions of the defects and the features of the defects or the classification result of the defects.
摘要:
Surface states have traditionally been measured with apparatuses such as an atomic force microscope (AFM), and these measurements have been high in resolution but low in speed. In conventional apparatuses for inspecting the foreign matter sticking to a wafer surface, and for inspecting defects present on the wafer surface, the inspection has had a tendency to be restricted in a region of the highest noise level arising from the roughness of the surface, the surface state, and/or crystal orientations, and thereby to reduce detection sensitivity in a region of lower noise levels. In these conventional techniques, signal processing of the light scattered from the object to be inspected has been based only upon the intensity of the light.This invention acquires three-dimensional data by, during such signal processing, adding detection intervals and the frequency of detection, as well as the intensity of light. The invention measures surface roughness of a target object (wafer) by creating region-specific three-dimensional maps from the three-dimensional data, then estimating the surface state of the wafer from analytical results, processing this estimated surface state as physical quantities, and analyzing the data.