公开(公告)号：US5745406A

公开(公告)日：1998-04-28

申请号：US745479

申请日：1996-11-12

申请人： Haruki Yamane ,  Yoshinori Maeno ,  Masanobu Kobayashi

发明人： Haruki Yamane ,  Yoshinori Maeno ,  Masanobu Kobayashi

IPC分类号： G11C11/15 ,  G11C11/16 ,  G11C11/56 ,  G11C11/00

CPC分类号： G11C11/15 ,  G11C11/16 ,  G11C11/5607 ,  G11C2211/5616

摘要： A memory cell has two magnetoresistive memory elements, each with at least two ferromagnetic layers. The electrical resistance of each memory element differs depending on whether the ferromagnetic layers are magnetized in the parallel or antiparallel state. Binary information is stored in the memory cell by supplying currents that generate magnetic fields setting one memory element to the parallel state and the other memory element to the antiparallel state. Alternatively, ternary information is stored, two of the ternary values being stored in the same way as the binary values, and the third ternary value being stored by setting both memory elements to the same state. The stored values are read by comparing the resistances of the two memory elements.

摘要翻译： 存储单元具有两个磁阻存储元件，每个具有至少两个铁磁层。 每个存储元件的电阻根据铁磁层是平行还是反平行状态而被磁化。 二进制信息通过将产生设置一个存储元件的磁场的电流提供给并行状态而存储在存储单元中，而另一个存储元件提供反向并行状态。 或者，三元信息被存储，两个三元值以与二进制值相同的方式存储，并且通过将两个存储元件设置为相同的状态来存储第三个三元值。 通过比较两个存储元件的电阻来读取存储的值。

公开(公告)号：US5604030A

公开(公告)日：1997-02-18

申请号：US150283

申请日：1993-11-10

申请人： Haruki Yamane ,  Masanobu Kobayashi ,  Yoshinori Maeno ,  Kayoko Sato

发明人： Haruki Yamane ,  Masanobu Kobayashi ,  Yoshinori Maeno ,  Kayoko Sato

IPC分类号： G11B5/66 ,  B05D5/12 ,  B32B5/16 ,  C23C14/00

CPC分类号： G11B5/66 ,  Y10S428/90 ,  Y10T428/12465 ,  Y10T428/12861 ,  Y10T428/12875 ,  Y10T428/12931 ,  Y10T428/26 ,  Y10T428/265

摘要： A magnetic recording medium having a substrate, and an artificial superlattice deposited on the substrate as a vertical magnetization film. The artificial superlattice is a Co/Pt artificial superlattice which is composed of alternate Co and Pt layers deposited on the substrate. The magnetic recording medium is fabricated by the steps of: disposing a Co target and a Pt or Pd target separating from a substrate; performing an RF sputtering to the substrate by alternately facing the substrate with the Co target and the Pt or Pd target by means of periodical movement of the substrate, thereby forming a Co/Pt or Co/Pd artificial superlattice) on the substrate; and performing heat treatment to the Co/Pt or Co/Pd artificial superlattice at a temperature T in the range of 200.degree. C. to 450.degree. C. inclusive.

摘要翻译： 具有基板的磁记录介质和作为垂直磁化膜沉积在基板上的人造超晶格。 人造超晶格是Co / Pt人造超晶格，其由沉积在衬底上的交替的Co和Pt层组成。 通过以下步骤制造磁记录介质：设置从基板分离的Co靶和Pt或Pd靶; 通过基板的周期性移动与Co靶和Pt或Pd靶交替地面对基板，从而在基板上形成Co / Pt或Co / Pd人造超晶格，从而对基板进行RF溅射） 并在200〜450℃范围内的温度T下对Co / Pt或Co / Pd人造超晶格进行热处理。