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    Memory cell configuration and method for operating the configuration
    2.
    发明申请
    Memory cell configuration and method for operating the configuration 有权
    存储单元配置和操作配置的方法

    公开(公告)号：US20020154537A1

    公开(公告)日：2002-10-24

    申请号：US10094865

    申请日：2002-03-06

    发明人： Siegfried Schwarzl ,  Stefan Miethaner

    IPC分类号： G11C011/00

    CPC分类号： G11C11/5607 ,  G11C11/16 ,  G11C2211/5615 ,  G11C2211/5616 ,  H01L27/222

    摘要： A memory cell configuration has memory cells that each contain two magnetoresistive elements. If the two magnetoresistive elements of each memory cell are magnetized in such a way that they have different resistances, the information stored in the memory cell can be determined with a resistor half-bridge circuit by assessing whether the signal tapped off at the output is greater than or less than zero.

    摘要翻译： 存储单元配置具有每个都包含两个磁阻元件的存储单元。 如果每个存储单元的两个磁阻元件以这样的方式被磁化，使得它们具有不同的电阻，则存储在存储单元中的信息可以通过评估在输出端分接的信号是否更大的电阻器半桥电路来确定 大于或小于零。

    Element exploiting magnetic material and addressing method therefor
    3.
    发明授权
    Element exploiting magnetic material and addressing method therefor 有权
    利用磁性材料的元素及其寻址方法

    公开(公告)号：US06178112B1

    公开(公告)日：2001-01-23

    申请号：US09248907

    申请日：1999-02-12

    申请人： Kazuhiro Bessho ,  Yoh Iwasaki

    发明人： Kazuhiro Bessho ,  Yoh Iwasaki

    IPC分类号： G11C1115

    CPC分类号： H01L29/66984 ,  G11C11/22 ,  G11C11/5607 ,  G11C2211/5615 ,  G11C2211/5616 ,  H01L43/08

    摘要： An element that is able to control magnetization without applying a magnetic field from outside. A magnetized area formed of a ferromagnetic material is split by a spacer area of a composite material including a magnetic material and a semiconductor material. A stimulus is applied from outside to the spacer area to change the magnetic interaction between split magnetized areas to control the magnetization of the magnetized areas. Alternatively, a layered assembly made up of an electrically conductive layer containing an electrically conductive material and plural magnetic layers is provided so that the electrically conductive layer is arranged between the magnetic layers. The current is caused to flow through the electrically conductive layer to change the magnetic coupling state between the magnetic layers to control the direction of magnetization between the magnetic layers.

    摘要翻译： 能够在不施加来自外部的磁场的情况下控制磁化的元件。 由铁磁材料形成的磁化区域被包括磁性材料和半导体材料的复合材料的间隔区分开。 从外部向间隔区域施加刺激以改变分裂磁化区域之间的磁相互作用，以控制磁化区域的磁化。 或者，提供由包含导电材料和多个磁性层的导电层构成的层叠组件，使得导电层布置在磁性层之间。 使电流流过导电层以改变磁性层之间的磁耦合状态，以控制磁性层之间的磁化方向。

    MRAM cell requiring low switching field
    4.
    发明授权
    MRAM cell requiring low switching field 失效
    需要低开关场的MRAM单元

    公开(公告)号：US5917749A

    公开(公告)日：1999-06-29

    申请号：US862898

    申请日：1997-05-23

    申请人： Eugene Chen ,  Saied N. Tehrani

    发明人： Eugene Chen ,  Saied N. Tehrani

    IPC分类号： G11C11/56 ,  G11C11/15

    CPC分类号： G11C11/5607 ,  G11C11/161 ,  G11C2211/5615 ,  G11C2211/5616

    摘要： A low switching field multi-state, multi-layer magnetic memory cell including two layers of magnetic material stacked in parallel, overlying relationship and separated by a layer of non-magnetic material so as to form a portion of a multi-layer magnetic memory cell. The two layers of magnetic material being formed so that the width is less than the length and less than a width of magnetic domain walls within the two layers of magnetic material, setting a shape anisotropy easy axis along the length thereof. At least one of the two layers of magnetic material having a magnetic anisotropy generally parallel to the width of the layers of magnetic material.

    摘要翻译： 一种低开关场多状态多层磁存储单元，包括两层平行堆叠的磁性材料，叠置关系并由一层非磁性材料隔开，以形成多层磁存储单元的一部分 。 两层磁性材料形成为使得该宽度小于两层磁性材料中的磁畴壁的长度和小于宽度的宽度，沿着其长度设定形状各向异性易轴。 两层磁性材料中至少有一层具有大致平行于磁性材料层宽度的磁各向异性。

    Multiple-bit magnetic random access memory cell employing adiabatic switching
    6.
    发明授权
    Multiple-bit magnetic random access memory cell employing adiabatic switching 失效
    采用绝热开关的多位磁性随机存取存储单元

    公开(公告)号：US07109539B2

    公开(公告)日：2006-09-19

    申请号：US10898800

    申请日：2004-07-26

    申请人： Yu Lu

    发明人： Yu Lu

    IPC分类号： H01L29/76

    CPC分类号： G11C11/5607 ,  G11C11/16 ,  G11C2211/5615 ,  G11C2211/5616 ,  H01L27/222

    摘要： A multiple-bit memory cell for use in a magnetic random access memory circuit includes a first adiabatic switching storage element having a first anisotropy axis associated therewith and a second adiabatic switching storage element having a second anisotropy axis associated therewith. The first and second anisotropy axes are oriented at a substantially non-zero angle relative to at least one bit line and at least one word line corresponding to the memory cell. The memory cell is configured such that two quadrants of a write plane not used for writing one of the storage elements can be beneficially utilized to write the other storage element so that there is essentially no loss of write margin in the memory cell.

    摘要翻译： 用于磁随机存取存储器电路的多位存储单元包括具有与其相关联的第一各向异性轴的第一绝热开关存储元件和具有与其相关联的第二各向异性轴的第二绝热开关存储元件。 第一和第二各向异性轴相对于至少一个位线和对应于存储器单元的至少一个字线以基本上非零的角度定向。 存储器单元被配置为使得不用于写入其中一个存储元件的写入平面的两个象限可以有利地用于写入另一个存储元件，使得在存储单元中基本上没有写入裕度的损失。

    Multiple-bit magnetic random access memory cell employing adiabatic switching
    7.
    发明申请
    Multiple-bit magnetic random access memory cell employing adiabatic switching 失效
    采用绝热开关的多位磁性随机存取存储单元

    公开(公告)号：US20050199927A1

    公开(公告)日：2005-09-15

    申请号：US10898800

    申请日：2004-07-26

    申请人： Yu Lu

    发明人： Yu Lu

    IPC分类号： G11C11/00

    CPC分类号： G11C11/5607 ,  G11C11/16 ,  G11C2211/5615 ,  G11C2211/5616 ,  H01L27/222

    摘要： A multiple-bit memory cell for use in a magnetic random access memory circuit includes a first adiabatic switching storage element having a first anisotropy axis associated therewith and a second adiabatic switching storage element having a second anisotropy axis associated therewith. The first and second anisotropy axes are oriented at a substantially non-zero angle relative to at least one bit line and at least one word line corresponding to the memory cell. The memory cell is configured such that two quadrants of a write plane not used for writing one of the storage elements can be beneficially utilized to write the other storage element so that there is essentially no loss of write margin in the memory cell.

    摘要翻译： 用于磁随机存取存储器电路的多位存储单元包括具有与其相关联的第一各向异性轴的第一绝热开关存储元件和具有与其相关联的第二各向异性轴的第二绝热开关存储元件。 第一和第二各向异性轴相对于至少一个位线和对应于存储器单元的至少一个字线以基本上非零的角度定向。 存储器单元被配置为使得不用于写入其中一个存储元件的写入平面的两个象限可以有利地用于写入另一个存储元件，使得在存储单元中基本上没有写入裕度的损失。

    Multi-layer magnet tunneling junction memory cells
    10.
    发明授权
    Multi-layer magnet tunneling junction memory cells 失效
    多层磁铁隧道结存储单元

    公开(公告)号：US5978257A

    公开(公告)日：1999-11-02

    申请号：US28426

    申请日：1998-02-24

    申请人： Xiaodong T. Zhu ,  Herbert Goronkin ,  Saied N. Tehrani

    发明人： Xiaodong T. Zhu ,  Herbert Goronkin ,  Saied N. Tehrani

    IPC分类号： G11C11/15 ,  G11C11/16 ,  G11C11/56 ,  H01L21/8246

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/16 ,  G11C11/5607 ,  H01L27/224 ,  G11C2211/5615 ,  G11C2211/5616

    摘要： A multi-state, multi-layer magnetic memory cell including a first conductor, a first magnetic layer contacting the first conductor, an insulating layer on the first magnetic layer, a second magnetic layer on the insulating layer, a second conductor contacting the second magnetic layer, and a word line adjacent, or in contact with, the cell so as to provide a magnetic field to partially switch magnetic vectors along the length of the first magnetic layer. Information is stored by passing one current through the word line and a second current through the first and second conductors sufficient to switch vectors in the first and second magnetic layers. Sensing is accomplished by passing a read current through a word line sufficient to switch one layer (and not the other) and a sense current through the cell, by way of the first and second conductors, and measuring a resistance across the cell.

    摘要翻译： 一种多态多层磁存储单元，包括第一导体，与第一导体接触的第一磁性层，第一磁性层上的绝缘层，绝缘层上的第二磁性层，与第二磁性体接触的第二导体 层，以及与单元相邻或接触的字线，以便提供磁场以沿着第一磁性层的长度部分地切换磁矢量。 通过使一条电流通过字线并通过第一和第二导体的第二电流足以切换第一和第二磁性层中的矢量来存储信息。 通过使读取电流通过足以通过第一和第二导体切换一层（而不是另一层）和感测电流通过电池的读取电流，并测量电池两端的电阻来实现感测。