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公开(公告)号：US07876483B2
公开(公告)日：2011-01-25
申请号：US11597474
申请日：2005-05-11
IPC分类号： G02F3/00 , H01L27/118
CPC分类号： H03K19/17748 , H01L27/1446
摘要： To provide an optically reconfigurable logic circuit in which a mount area of an optical circuit is reduced as much as possible and a high gate density is realized.In an optically reconfigurable logic circuit 1 provided with a plurality of configuration information input circuits 6 for converting an optical signal including logic circuit configuration information into an electric signal and holding and outputting this electric signal and a logic configuration variable circuit 7 for performing logic configuration on the basis of the logic circuit configuration information, the configuration information input circuits 6 holds the logic circuit configuration information as electric charge with use of a junction capacitance and a floating capacitance of a photoconductive device P. An inter-terminal voltage of the photoconductive device P is converted into binary data by a binary circuit and output as a circuit configuration signal. Then, the logic configuration variable circuit 7 is configured to execute a logic arithmetic processing before the inter-terminal voltage of the photoconductive device P drops to be equal to or lower than a logic threshold of the binary circuit due to a leak current.
摘要翻译： 提供光可重构逻辑电路，其中尽可能减少光电路的安装面积并实现高栅极密度。 在具有多个配置信息输入电路6的光学可重构逻辑电路1中，用于将包括逻辑电路配置信息的光信号转换为电信号并保持并输出该电信号，以及用于执行逻辑配置的逻辑配置可变电路7 在逻辑电路配置信息的基础上，配置信息输入电路6使用结电容和感光体P的浮动电容将逻辑电路配置信息保持为电荷。光导器件P的端子间电压 通过二进制电路转换成二进制数据并作为电路配置信号输出。 然后，逻辑配置可变电路7被配置为在光电导器件P的端子间电压下降到等于或低于由于泄漏电流引起的二进制电路的逻辑阈值之前执行逻辑运算处理。
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公开(公告)号：US20110006191A1
公开(公告)日：2011-01-13
申请号：US12793876
申请日：2010-06-04
IPC分类号： H01L27/148
CPC分类号： H04N5/343 , H04N5/232 , H04N5/23245
摘要： An image capture apparatus includes a plurality of pixels, each including a plurality of thin film transistors (T1, T2) having different operating resistances and a photo-electric conversion element (C11), a selection unit configured to select at least one of the thin film transistors, and a signal line (S1) on which electric charge generated by the photo-electric conversion elements is output via the thin film transistors selected by the selection unit.
摘要翻译： 一种图像捕获装置包括多个像素，每个像素包括具有不同工作电阻的多个薄膜晶体管（T1，T2）和光电转换元件（C11），选择单元被配置为选择薄的 薄膜晶体管和由光电转换元件产生的电荷的信号线（S1）经由由选择单元选择的薄膜晶体管输出。
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公开(公告)号：US20100294942A1
公开(公告)日：2010-11-25
申请号：US12596493
申请日：2008-07-18
IPC分类号： H01L27/146 , G01T1/208
CPC分类号： H04N5/361 , G01T1/2928 , H01L27/14603 , H01L27/14609 , H01L27/14636 , H01L27/14658 , H01L27/14663 , H01L27/14692 , H04N5/32 , H04N5/357 , H04N5/3655 , H04N5/3658 , H04N5/3696 , H04N5/37457 , H04N5/378
摘要： A radiation detecting apparatus capable of obtaining good images including decreased noises includes a plurality of pixels, each having a photoelectric conversion element for converting an incident radiation into an electric signal and a a first switch element connected to the photoelectric conversion element and a second switch element being not connected to the conversion element; a first signal line; a second signal line; and a drive line, wherein the first switch element has a first main electrode connected electrically to the first signal line, a second main electrode connected electrically to the photoelectric conversion element, and a gate electrode connected electrically to the drive line, the second switch element has a first main electrode connected to the second signal line and a gate electrode connected electrically to the drive wiring common to the first switch element, and a differential means for outputting a signal corresponding to a difference between outputs from the first and second switch elements.
摘要翻译： 能够获得包括降低噪声的良好图像的放射线检测装置包括多个像素，每个像素具有用于将入射辐射转换成电信号的光电转换元件和连接到光电转换元件的第一开关元件，以及第二开关元件 未连接到转换元素; 第一条信号线 第二信号线; 以及驱动线，其中所述第一开关元件具有与所述第一信号线电连接的第一主电极，与所述光电转换元件电连接的第二主电极和与所述驱动线电连接的栅电极，所述第二开关元件 具有连接到第二信号线的第一主电极和与第一开关元件共同的驱动布线电连接的栅电极，以及差分装置，用于输出对应于来自第一和第二开关元件的输出之间的差的信号。
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公开(公告)号：US07829858B2
公开(公告)日：2010-11-09
申请号：US11917334
申请日：2006-07-21
IPC分类号： G01T1/24
CPC分类号： H01L27/14663 , H01L27/14623 , H01L27/14692 , H01L31/117 , H01L31/119 , H04N5/32
摘要： In a radiation detecting apparatus of the invention, plural pixels are arranged, and the pixel has a conversion element converting a radiation into an electric signal and a switching element connected to the conversion element. The conversion element includes a first electrode disposed on a first surface of an insulating substrate, a second electrode disposed on the first electrode, and a semiconductor layer disposed between the first electrode and the second electrode. The first electrode is made of a light-transmitting conductive material which transmits light emitted from a light source, and the first electrode is formed form a light transmitting electroconductive material transmitting light emitted form a light source disposed on a second surface of the insulating substrate opposite to the first surface. The switching element has a light shielding member which prevents incidence of the light from the light source to the switching element.
摘要翻译： 在本发明的放射线检测装置中，配置有多个像素，像素具有将辐射转换为电信号的转换元件和与转换元件连接的开关元件。 转换元件包括设置在绝缘基板的第一表面上的第一电极，设置在第一电极上的第二电极以及设置在第一电极和第二电极之间的半导体层。 第一电极由透光的光透射导电材料制成，该透光导电材料透射从光源发射的光，并且第一电极形成为透光导电材料，透光导电材料透射从光源发射的光，所述光源设置在绝缘衬底的相对的第二表面上 到第一个表面。 开关元件具有防止从光源到开关元件的入射的遮光部件。
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75.发明申请公开(公告)号：US20100193691A1
公开(公告)日：2010-08-05
申请号：US12676352
申请日：2008-11-04
CPC分类号： H01L27/14663
摘要： The object of the invention is to realize a light radiation-detecting apparatus including a step of preparing a matrix array including a substrate, an insulating layer arranged on the substrate, a plurality of pixels arranged on the insulating layer, wherein the pixel includes a conversion element converting an incident radiation into an electric signal, and connection electrode arranged at a periphery of the plurality of pixels, fixing a flexible supporting member for covering the plurality of pixels to the matrix array at a side opposite to the substrate, and releasing the substrate from the matrix array.
摘要翻译： 本发明的目的是实现一种光辐射检测装置，包括准备包括衬底，布置在衬底上的绝缘层，布置在绝缘层上的多个像素的矩阵阵列的步骤，其中像素包括转换 元件将入射辐射转换为电信号，以及连接电极，布置在多个像素的周围，将与多个像素覆盖的柔性支撑部件固定在与基板相对的一侧的矩阵阵列，并且释放基板 从矩阵数组。
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公开(公告)号：US07750422B2
公开(公告)日：2010-07-06
申请号：US11685044
申请日：2007-03-12
IPC分类号： H01L31/0224
CPC分类号： H01L27/12 , H01L27/14643 , H04N5/32
摘要： In a solid state image pickup apparatus with a photodetecting device and one or more thin film transistors connected to the photodetecting device formed in one pixel, a part of the photodetecting device is formed over at least a part of the thin film transistor, and the thin film transistor is constructed by a source electrode, a drain electrode, a first gate electrode, and a second gate electrode arranged on the side opposite to the first gate electrode with respect to the source electrode and the drain electrode, and the first gate electrode is connected to the second gate electrode every pixel, thereby, suppressing an adverse effect of the photodetecting device on the TFT, a leakage at turn-off TFT, variation in a threshold voltage of the TFT due to an external electric field, and accurately transferring photo carrier to a signal processing circuit.
摘要翻译： 在具有与一个像素形成的受光器件连接的受光器件和一个以上的薄膜晶体管的固态摄像装置中，在所述薄膜晶体管的至少一部分上形成有所述受光器件的一部分， 薄膜晶体管由源电极，漏电极，第一栅电极和第二栅电极构成，第二栅电极相对于源电极和漏极布置在与第一栅电极相反的一侧，第一栅极为 连接到每个像素的第二栅电极，从而抑制光检测器件对TFT的不利影响，关断TFT处的泄漏，由于外部电场引起的TFT的阈值电压的变化，以及精确地传输照片 载波到信号处理电路。
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77.发明申请RADIATION IMAGE PICK-UP DEVICE AND METHOD THEREFOR, AND RADIATION IMAGE PICK-UP SYSTEM 有权辐射图像拍摄装置及其方法，以及辐射图像拾取系统公开(公告)号：US20090185659A1
公开(公告)日：2009-07-23
申请号：US12349733
申请日：2009-01-07
CPC分类号： H04N5/3745 , H01L27/14632 , H01L27/14658 , H01L27/14663 , H04N5/35527
摘要： Sensitivity is freely changeable to another one in correspondence to a photographing mode, and both still image photographing and moving image photographing for example which are largely different from each other in dosage of exposure to radiation and which are also different from each other in required sensitivity are carried out so as to meet that request. A source or drain electrode of a TFT 21 is connected to a signal output circuit 3 through a signal line 14a and an IC 5. A source/drain of a TFT 23 is connected to the signal output circuit 3 through a signal line 14b and the IC 5. Thus, in each pixel 6, any one of the signal lines 14a and 14b is freely selectable when a signal is read out.
摘要翻译： 灵敏度可自由地变化为与拍摄模式相对应的灵敏度，并且静止图像拍摄和例如在暴露于辐射的剂量中彼此大不相同并且在所需灵敏度上彼此不同的动态图像拍摄中， 进行，以满足这一要求。 TFT21的源极或漏极通过信号线14a和IC5连接到信号输出电路3. TFT 23的源极/漏极通过信号线14b连接到信号输出电路3，并且 因此，在每个像素6中，当读出信号时，信号线14a和14b中的任何一个可以自由地选择。
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公开(公告)号：US20090040310A1
公开(公告)日：2009-02-12
申请号：US12245391
申请日：2008-10-03
IPC分类号： H04N5/335
CPC分类号： H04N5/32 , H01L27/14603 , H01L27/14658
摘要： A solid-state image pickup device according to the present invention has a plurality of photoelectric conversion elements and a plurality of switching elements. The photoelectric conversion element is formed above at least one switching element, and a shielding electrode layer is disposed between the switching elements and the photoelectric conversion elements. Further, a radiation image pickup device according to the present invention has a radiation conversion layer for directly converting radiation into electric charges, and a plurality of switching elements, and has the radiation conversion layer formed above one or more switching elements, and a shielding electrode layer disposed between the switching elements and the radiation conversion layer.
摘要翻译： 根据本发明的固态图像拾取装置具有多个光电转换元件和多个开关元件。 光电转换元件形成在至少一个开关元件上方，并且屏蔽电极层设置在开关元件和光电转换元件之间。 此外，根据本发明的放射线摄像装置具有用于将辐射直接转换为电荷的辐射转换层和多个开关元件，并且具有形成在一个或多个开关元件上方的辐射转换层和屏蔽电极 层之间设置在开关元件和辐射转换层之间。
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公开(公告)号：US07408169B2
公开(公告)日：2008-08-05
申请号：US11428839
申请日：2006-07-06
申请人： Takamasa Ishii , Minoru Watanabe
发明人： Takamasa Ishii , Minoru Watanabe
CPC分类号： G01T1/2928 , G01T1/026 , G01T1/24
摘要： This invention is to provide a radiation image sensing apparatus capable of automatically adjusting an incident radiation dose without requiring high-speed driving while suppressing any attenuation of the radiation before detection, and a method of manufacturing the same. To accomplish this, a read TFT (1) is formed on an insulating substrate (11). The semiconductor layer (19) and n+-semiconductor layer (20) of an MIS photoelectric conversion element (2) are formed on a second insulating layer (18) that covers the read TFT (1) to be aligned with source and drain electrodes (16) functioning as lower electrodes. The semiconductor layer (21) of a TFT sensor (3) is formed to be aligned with a gate electrode (17) when viewed from the upper side. The semiconductor layers (19, 21) are formed from the same layer. The upper electrode (22) of the MIS photoelectric conversion element (2) is formed on the n+-semiconductor layer (20). Two ohmic contact layers (23) are formed on the semiconductor layer (21). Source and drain electrodes (24) are formed on the two ohmic contact layers (23), respectively.
摘要翻译： 本发明提供能够自动调整入射辐射剂量而不需要高速驱动同时抑制检测前辐射的任何衰减的辐射图像感测装置及其制造方法。 为了实现这一点，在绝缘基板（11）上形成读取TFT（1）。 MIS光电转换元件（2）的半导体层（19）和n + + - 半导体层（20）形成在覆盖读取的TFT（1）的第二绝缘层（18）上 与用作下电极的源极和漏极（16）对准。 当从上侧观察时，TFT传感器（3）的半导体层（21）形成为与栅电极（17）对齐。 半导体层（19,21）由相同的层形成。 MIS光电转换元件（2）的上电极（22）形成在n + + - 半导体层（20）上。 在半导体层（21）上形成有两个欧姆接触层（23）。 源极和漏极（24）分别形成在两个欧姆接触层（23）上。
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80.发明授权公开(公告)号：US07332405B2
公开(公告)日：2008-02-19
申请号：US11048891
申请日：2005-02-03
申请人： Sachiko Yabe , Takashi Taguchi , Minoru Watanabe
发明人： Sachiko Yabe , Takashi Taguchi , Minoru Watanabe
IPC分类号： H01L21/76
CPC分类号： H01L23/544 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor integrated circuit is fabricated in a substrate having a semiconductor layer and an underlying insulator layer. The fabrication process includes a step of locally oxidizing the semiconductor layer to form a field oxide, during which step the semiconductor layer is protected by a nitride film. The nitride film has both openings to permit local oxidization in the integrated circuit area, and an opening defining an alignment mark adjacent to the circuit area. The alignment mark may be formed either in the semiconductor and insulator layers, or in a part of the nitride film left after the nitride film is removed from the circuit area. In either case, the edge height of the alignment mark is not limited by the thickness of the semiconductor layer. Using the nitride layer to define both the alignment mark and the field oxide reduces the necessary number of fabrication steps.
摘要翻译： 在具有半导体层和下层绝缘体层的衬底中制造半导体集成电路。 制造工艺包括将半导体层局部氧化以形成场氧化物的步骤，在该步骤期间半导体层被氮化物膜保护。 氮化物膜具有两个开口以允许集成电路区域中的局部氧化，以及限定与电路区域相邻的对准标记的开口。 对准标记可以形成在半导体层和绝缘体层中，或者在从电路区域去除氮化物膜之后残留的氮化膜的一部分中。 在任一情况下，对准标记的边缘高度不受半导体层的厚度的限制。 使用氮化物层来限定对准标记和场氧化物两者减少了必要数量的制造步骤。
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