公开(公告)号：US10957393B2

公开(公告)日：2021-03-23

申请号：US16454461

申请日：2019-06-27

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Luca De Santis

IPC: G11C16/08 ,  G11C16/04 ,  G11C16/34 ,  G11C16/26

Abstract: Method of operating a memory, and apparatus configured to perform similar methods, including performing a first access operation having a plurality of phases on a first grouping of memory cells, receiving a command to perform a second access operation having a plurality of phases on a second grouping of memory cells while performing a particular phase of the plurality of phases of the first access operation, pausing the first access operation in response to completion of the particular phase of the plurality of phases of the first access operation, performing an initial phase of the plurality of phases of the second access operation while the first access operation is paused, and performing a next subsequent phase of the plurality of phases of the first access operation and a next subsequent phase of the plurality of phases of the second access operation concurrently.

公开(公告)号：US10950312B2

公开(公告)日：2021-03-16

申请号：US16458384

申请日：2019-07-01

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Kenneth J. Eldredge ,  Frankie F. Roohparvar ,  Luca De Santis ,  Tommaso Vali

IPC: G11C16/26 ,  G11C16/28 ,  G11C15/00 ,  G11C15/04 ,  G11C16/04

Abstract: Methods of operating a memory device include comparing input data to data stored in memory cells coupled to a data line, comparing a representation of a level of current in the data line to a reference, and determining that the input data potentially matches the data stored in the memory cells when the representation of the level of current in the data line is less than the reference. Methods of operating a memory device further include comparing input data to first data and to second data stored in memory cells coupled to a first data line or to a second data line, respectively, comparing representations of the levels of current in the first data line and in the second data line to a first reference and to a different second reference, and deeming one to be a closer match to the input data in response to results of the comparisons.

公开(公告)号：US20200372960A1

公开(公告)日：2020-11-26

申请号：US16989191

申请日：2020-08-10

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Tommaso Vali ,  Kenneth J. Eldredge ,  Frankie F. Roohparvar ,  Luca De Santis

IPC: G11C16/26 ,  G06N3/04 ,  G11C16/08 ,  G11C7/10 ,  G11C16/04 ,  G06N3/063

Abstract: Memory having an array of memory cells and configured to store a first value representative of a characteristic sensed from a first data line, store a second value representative of the characteristic sensed from a second data line, perform an operation on the first value and the data value at a first logic circuitry, and perform an operation on an output of the first logic circuitry and a threshold data value at a second logic circuitry.

公开(公告)号：US20200234777A1

公开(公告)日：2020-07-23

申请号：US16839304

申请日：2020-04-03

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Luca De Santis

IPC: G11C16/34 ,  G11C16/26

Abstract: Apparatus including an array of memory cells, a plurality of access lines each corresponding to a respective plurality of memory cells of the array of memory cells and each connected to a control gate of each memory cell of its respective plurality of memory cells; and a controller for access of the array of memory cells that is configured to cause the apparatus to apply a particular voltage level to a particular access line of the plurality of access lines, and determine a value indicative of a number of memory cells of the respective plurality of memory cells for the particular access line that are activated in response to applying the particular voltage level. The controller might further be configured to determine an expected data age of the respective plurality of memory cells, and/or determine a plurality of read voltages for reading the respective plurality of memory cells.

公开(公告)号：US20200152278A1

公开(公告)日：2020-05-14

申请号：US16745514

申请日：2020-01-17

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Luca De Santis ,  Marco-Domenico Tiburzi

IPC: G11C16/34 ,  G11C29/50 ,  G11C7/06 ,  G11C7/14 ,  G11C16/04 ,  G11C11/56 ,  G11C16/28

Abstract: Methods of operating a memory, as well as memory configured to perform such method, include applying an intermediate read voltage to a selected access line for a read operation, adding noise to a sensing operation while applying the intermediate read voltage, determining a value indicative of a number of memory cells of a plurality of memory cells connected to the selected access line that are activated in response to applying the intermediate read voltage to the selected access line, and determining a plurality of read voltages for the read operation in response to the value indicative of the number of memory cells of the plurality of memory cells that are activated in response to applying the intermediate read voltage to the selected access line.

公开(公告)号：US10529430B2

公开(公告)日：2020-01-07

申请号：US16180154

申请日：2018-11-05

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Kenneth J. Eldredge ,  Frankie F. Roohparvar ,  Luca De Santis ,  Tommaso Vali

IPC: G11C16/28 ,  G11C15/00 ,  G11C15/04 ,  G11C16/04

Abstract: Methods of operating a memory device include comparing input data to data stored in memory cells coupled to a data line, comparing a representation of a level of current in the data line to a reference, and determining that the input data potentially matches the data stored in the memory cells when the representation of the level of current in the data line is less than the reference. Methods of operating a memory device further include comparing input data to first data and to second data stored in memory cells coupled to a first data line or to a second data line, respectively, comparing representations of the levels of current in the first data line and in the second data line to a first reference and to a different second reference, and deeming one to be a closer match to the input data in response to results of the comparisons.

公开(公告)号：US10482972B2

公开(公告)日：2019-11-19

申请号：US16413708

申请日：2019-05-16

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Luca De Santis ,  Tommaso Vali ,  Kenneth J. Eldredge ,  Frankie F. Roohparvar

IPC: G11C16/04 ,  G11C16/10 ,  G11C16/34 ,  G11C16/26

Abstract: Memories include a data line, a plurality of strings of series-connected memory cells selectively connected to the data line, a plurality of first access lines each coupled to a control gate of a respective memory cell of each string of series-connected memory cells of the plurality of strings of series-connected memory cells, and a plurality of second access lines each coupled to a control gate of a respective memory cell of a respective string of series-connected memory cells of the plurality of strings of series-connected memory cells.

公开(公告)号：US20190074069A1

公开(公告)日：2019-03-07

申请号：US16180154

申请日：2018-11-05

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Kenneth J. Eldredge ,  Frankie F. Roohparvar ,  Luca De Santis ,  Tommaso Vali

IPC: G11C16/28 ,  G11C16/04 ,  G11C15/00 ,  G11C15/04

Abstract: Methods of operating a memory device include comparing input data to data stored in memory cells coupled to a data line, comparing a representation of a level of current in the data line to a reference, and determining that the input data potentially matches the data stored in the memory cells when the representation of the level of current in the data line is less than the reference. Methods of operating a memory device further include comparing input data to first data and to second data stored in memory cells coupled to a first data line or to a second data line, respectively, comparing representations of the levels of current in the first data line and in the second data line to a first reference and to a different second reference, and deeming one to be a closer match to the input data in response to results of the comparisons.

公开(公告)号：US20190074068A1

公开(公告)日：2019-03-07

申请号：US16180137

申请日：2018-11-05

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Kenneth J. Eldredge ,  Frankie F. Roohparvar ,  Luca De Santis ,  Tommaso Vali

IPC: G11C16/28 ,  G11C16/04 ,  G11C15/00 ,  G11C15/04

Abstract: Methods of operating a memory device include comparing input data to data stored in strings of series-connected memory cells coupled to a data line, generating a respective resistance in series with each string of series-connected memory cells while comparing the plurality of digits of input data to the stored data, comparing a representation of a level of current in the data line to a reference, deeming the input data to match the stored data in response to the representation of the level of current in the data line being less than the reference, and deeming the input data to not match the stored data in response to the representation of the level of current in the data line being greater than the reference.

公开(公告)号：US10170167B2

公开(公告)日：2019-01-01

申请号：US15162128

申请日：2016-05-23

Applicant: Micron Technology, Inc.

Inventor： Mauro Castelli ,  Luca De Santis ,  Luigi Pilolli ,  Maria Luisa Gallese

IPC: G11C7/22 ,  G11C5/14 ,  G11C7/06 ,  G11C8/10 ,  G11C5/04

Abstract: Some embodiments include apparatuses and methods having a node to couple to a plurality of memory devices, memory cells, and a module to perform an operation on the memory cells, to cause at least one change in a level of a signal at the node in order to make a request to perform a particular stage of the operation such that the request is detectable by the memory devices, and to perform the particular stage of the operation after the request is acknowledged. Other embodiments are described.